TEA1066T [NXP]
Versatile telephone transmission circuit with dialler interface; 与拨号接口的多功能电话传输电路
| 型号： | TEA1066T |
| 厂家： | 
NXP |
| 描述： | Versatile telephone transmission circuit with dialler interface |
| 文件： | 总24页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1066T
Versatile telephone transmission
circuit with dialler interface
1996 Apr 04
Product specification
Supersedes data of September 1990
File under Integrated Circuits, IC03
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
• Receiving amplifier for magnetic, dynamic or
piezoelectric earpieces
FEATURES
• Voltage regulator with adjustable static resistance
• Provides supply for external circuitry
• Large gain setting range on microphone and earpiece
amplifiers
• Symmetrical low-impedance inputs for dynamic and
magnetic microphones
• Line loss compensation facility, line current dependent
(microphone and earpiece amplifiers)
• Symmetrical high-impedance inputs for piezoelectric
microphone
• Gain control adaptable to exchange supply
• DC line voltage adjustment facility.
• Asymmetrical high-impedance input for electret
microphone
GENERAL DESCRIPTION
• Dual-tone multi-frequency (DTMF) signal input with
confidence tone
The TEA1066T is a bipolar integrated circuit that performs
all speech and line interface functions required in fully
electronic telephone sets. The circuit performs electronic
switching between dialling and speech.
• Mute input for pulse or DTMF dialling
• Power down input for pulse dial or register recall
QUICK REFERENCE DATA
SYMBOL
VLN
Iline
ICC
PARAMETER
CONDITIONS
Iline = 15 mA
MIN. TYP. MAX. UNIT
line voltage
line current
4.25
10
−
4.45
−
4.65
140
1.3
82
V
normal operation
mA
mA
µA
V
internal supply current
power down input LOW
power down input HIGH
0.96
55
−
VCC
supply voltage for peripherals
Iline = 15 mA; MUTE
2.8
3.05
−
input HIGH; Ip = 1.2 mA
Iline = 15 mA; MUTE
2.5
−
−
V
input HIGH; Ip = 1.7 mA
Gv
voltage gain range for microphone amplifier
low impedance inputs (pins 7 and 9)
high impedance inputs (pins 8 and 10)
receiving amplifier
44
−
−
−
−
60
dB
dB
dB
°C
30
46
17
39
Tamb
operating ambient temperature
−25
+75
Line loss compensation
∆Gv
gain control
5.5
24
5.9
−
6.3
dB
V
Vexch
Rexch
exchange supply voltage
exchange feeding bridge resistance
60
400
−
1000
Ω
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TEA1066T
SO20
plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
1996 Apr 04
2
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
BLOCK DIAGRAM
V
CC
LN
17
1
13
IR
6
5
4
GAR
QR+
QR−
TEA1066T
9
MICL+
10
MICH+
2
3
GAS1
GAS2
dB
8
MICH−
7
MICL−
15
DTMF
dB
16
14
MUTE
PD
SUPPLY AND
REFERENCE
AGC
CIRCUIT
CURRENT
REFERENCE
12
18
REG
19
AGC
11
20
V
STAB
MEA009 - 1
SLPE
EE
The blocks marked ‘dB’ are attenuators.
Fig.1 Block diagram.
1996 Apr 04
3
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
PINNING
SYMBOL PIN
DESCRIPTION
positive line terminal
LN
1
2
GAS1
gain adjustment transmitting
amplifier
GAS2
3
gain adjustment transmitting
amplifier
QR−
4
5
inverting output receiving amplifier
QR+
non-inverting output receiving
amplifier
handbook, halfpage
LN
GAS1
GAS2
QR−
1
2
3
4
5
6
7
8
9
20 SLPE
AGC
REG
19
18
17
GAR
6
7
gain adjustment receiving amplifier
MICL−
inverting microphone input, low
impedance
V
CC
MICH−
MICL+
MICH+
8
9
inverting microphone input, high
impedance
16 MUTE
15 DTMF
14 PD
QR+
TEA1066T
GAR
non-inverting microphone input, low
impedance
MICL−
10
non-inverting microphone input,
high impedance
MICH−
MICL+
13 IR
V
12
EE
STAB
VEE
11
12
13
14
15
16
17
18
19
20
current stabilizer
MICH+ 10
11 STAB
negative line terminal
IR
receiving amplifier input
power-down input
MBH120
PD
DTMF
MUTE
VCC
dual-tone multi-frequency input
mute input
supply voltage decoupling
voltage regulator decoupling
automatic gain control input
slope (DC resistance) adjustment
REG
AGC
SLPE
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
The DC current flowing into the set is determined by the
exchange supply voltage (Vexch), the feeding bridge
resistance (Rexch), the DC resistance of the telephone line
(Rline) and the DC voltage on the subscriber set
(see Fig.7).
Supplies: VCC, LN, SLPE, REG and STAB
Power for the TEA1066T and its peripheral circuits is
usually obtained from the telephone line. The TEA1066T
develops its own supply voltage at VCC and regulates its
voltage drop. The supply voltage VCC may also be used to
supply external peripheral circuits, e.g. dialling and control
circuits.
If the line current Iline exceeds the current ICC + 0.5 mA
required by the circuit itself (approximately 1 mA) plus the
current Ip required by the peripheral circuits connected to
VCC, then the voltage regulator diverts the excess current
via LN.
The supply has to be decoupled by connecting a
smoothing capacitor between VCC and VEE; the internal
voltage regulator has to be decoupled by a capacitor from
REG to VEE. An internal current stabilizer is set by a
resistor of 3.6 kΩ between STAB and VEE
.
1996 Apr 04
4
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
The voltage regulator adjusts the average voltage on
LN to:
and > 3 V, this being the minimum supply voltage for most
CMOS circuits, including voltage drop for an enable diode.
If MUTE is LOW, the available current is further reduced
when the receiving amplifier is driven.
VLN = Vref + ISLPE × R9
or
VLN = Vref + (Iline − ICC − 0.5 × 10−3A − Ip) × R9
Microphone inputs MICL+, MICH+, MICL− and MICH−
and amplification adjustment connections GAS1 and
GAS2
where Vref is an internally generated temperature
compensated reference voltage of 4.2 V and R9 is an
external resistor connected between SLPE and VEE
.
The TEA1066T has symmetrical microphone inputs.
The MICL+ and MICL− inputs are intended for
The preferred value for R9 is 20 Ω. Changing the value of
R9 will also affect microphone gain, DTMF gain, gain
control characteristics, side-tone level and the maximum
output swing on LN.
low-sensitivity, low-impedance dynamic or magnetic
microphones. The input impedance is 8.2 kΩ (2 × 4.1 kΩ)
and its voltage gain is typically 52 dB. The MICH+ and
MICH− inputs are intended for a piezoelectric microphone
or an electret microphone with a built-in FET source
follower. Its input impedance is 40.8 kΩ (2 × 20.4 kΩ) and
its voltage gain is typical 38 dB.
Under normal conditions, when ISLPE >> ICC + 0.5 mA + Ip,
the static behaviour of the circuit is that of a 4.2 V regulator
diode with an internal resistance equal to that of R9. In the
audio frequency range, the dynamic impedance is largely
determined by R1 (see Fig.3).
The arrangements with the microphone types mentioned
are shown in Fig.9.
The gain of the microphone amplifier in both types can be
adjusted over a range of ±8 dB to suit the sensitivity of the
transducer used. The gain is proportional to external
resistor R7 connected between GAS1 and GAS2.
LN
handbook, halfpage
An external capacitor C6 of 100 pF between GAS1 and
SLPE is required to ensure stability. A larger value may be
chosen to obtain a first-order low-pass filter. The cut-off
frequency corresponds with the time constant R7 × C6.
L
R1
V
R
eq
V
p
REG
CC
ref
R9
20 Ω
C3
4.7 µF
C1
100 µF
Mute input MUTE
A HIGH level at MUTE enables the DTMF input and
inhibits the microphone inputs and the receiving amplifier;
a LOW level or an open circuit has the reverse effect.
Switching the mute input will cause negligible clicks at the
earpiece outputs and on the line.
V
EE
MBA454
R
p = 17.5 kΩ
L
eq = C3 × R9 × Rp
Dual-tone multi frequency input DTMF
Fig.3 Equivalent impedance circuit.
When the DTMF input is enabled, dialling tones may be
sent onto the line. The voltage gain from DTMF to LN is
typically 25.5 dB and varies with R7 in the same way as
the gain of the microphone amplifier. The signalling tones
can be heard in the earpiece at a low level (confidence
tone).
The internal reference voltage can be adjusted by means
of an external resistor RVA. This resistor, connected
between LN and REG (pins 1 and 18), will decrease the
internal reference voltage; when connected between REG
and SLPE (pins 18 and 20) it will increase the internal
reference voltage.
Receiving amplifier: IR, QR+, QR− and GAR
The receiving amplifier has one input IR and two
complementary outputs, a non-inverting output QR+ and
an inverting output QR−.
Current Ip, available from VCC for supplying peripheral
circuits, depends on external components and on the line
current. Figure 8 shows this current for VCC > 2.2 V
1996 Apr 04
5
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
These outputs may be used for single-ended or for
differential drive, depending on the sensitivity and type of
earpiece used (see Fig.10). Gain from IR to QR+ is
typically 25 dB. This will be sufficient for low-impedance
magnetic or dynamic earpieces, which are suited for
single-ended drive. By using both outputs (differential
drive), the gain is increased by 6 dB and differential drive
becomes possible. This feature can be used when the
earpiece impedance exceeds 450 Ω (high-impedance
dynamic, magnetic or piezoelectric earpieces).
bridged by the charge in the smoothing capacitor C1.
The requirements on this capacitor are relaxed by applying
a HIGH level to the PD input during the time of the loop
break, which reduces the supply current from typically
1 mA to typically 55 µA.
A HIGH level at PD further disconnects the capacitor at
REG, with the effect that the voltage stabilizer will have no
switch-on delay after line interruptions. This results in no
contribution of the IC to the current waveform during pulse
dialling or register recall. When this facility is not required
PD may be left open.
The output voltage of the receiving amplifier is specified for
continuous-wave drive. The maximum output voltage will
be higher under speech conditions, where the ratio of peak
to RMS value is higher.
Side-tone suppression
Suppression of the transmitted signal in the earpiece is
obtained by the anti-side-tone network consisting of
R1//Zline, R2, R3, R8, R9 and Zbal (see Fig.14). Maximum
compensation is obtained when the following conditions
are fulfilled:
The receiving amplifier gain can be adjusted over a range
of ±8 dB to suit the sensitivity of the transducer used.
The gain is set by the external resistor R4 connected
between GAR and QR+.
R9 × R2 = R1 (R3 + [R8//Zbal] )
(1)
Two external capacitors, C4 = 100 pF and
C7 = 10 × C4 = 1 nF, are necessary to ensure stability.
A larger value of C4 may be chosen to obtain a first-order,
low-pass filter. The ‘cut-off’ frequency corresponds with
the time constant R4 × C4.
Z
bal ⁄ (Zbal + R8) = Zline ⁄ (Zline + R1)
(2)
If fixed values are chosen for R1, R2, R3, and R9, then
condition (1) will always be fulfilled, provided that
R8//Zbal < R3. To obtain optimum side-tone
Automatic gain control input AGC
suppression, condition (2) has to be fulfilled, resulting in:
Automatic line loss compensation is obtained by
Z
bal = (R8/R1) Zline = k × Zline, where k is a scale factor:
connecting a resistor R6 between AGC and VEE. This
automatic gain control varies the microphone amplifier
gain and the receiving amplifier gain in accordance with
the DC line current.
k = (R8/R1).
Scale factor k (dependent on the value of R8) must be
chosen to meet the following criteria:
1. Compatibility with a standard capacitor from the E6 or
E12 range for Zbal
The control range is 6 dB. This corresponds with a line
length of 5 km for a 0.5 mm diameter copper twisted-pair
cable with a DC resistance of 176 Ω/km and an average
attenuation of 1.2 dB/km.
2. Zbal//R8 << R3
3. Zbal + R8 >> R9.
Resistor R6 should be chosen in accordance with the
exchange supply voltage and its feeding bridge resistance
(see Fig.11 and Table 1). Different values of R6 give the
same ratio of line currents for start and end of the control
range.
In practice, Zline varies greatly with line length and cable
type; consequently, an average value has to be chosen for
Zbal. The suppression further depends on the accuracy
with which Zbal/k equals the average line impedance.
Example: The balanced line impedance Zbal at which
the optimum suppression is preset can be calculated by:
If automatic line loss compensation is not required, AGC
may be left open. The amplifiers then all give their
maximum gain as specified.
Assume Zline = 210 Ω + (1265 Ω/140 nF), representing a
5 km line of 0.5 mm diameter, copper, twisted-pair cable
matched to 600 Ω (176 Ω/km; 38 nF/km). When k = 0.64,
then R8 = 390 Ω; Zbal = 130 Ω + (820 Ω//220 nF).
Power-down input PD
During pulse dialling or register recall (timed loop break)
the telephone line is interrupted, as a consequence it
provides no supply for the transmission circuit and the
peripherals connected to VCC. These gaps have to be
The anti-side-tone network for the TEA1060 family shown
in Fig.4 attenuates the signal received from the line by
32 dB before it enters the receiving amplifier.
1996 Apr 04
6
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
The attenuation is almost constant over the whole audio
frequency range. Figure 5 shows a conventional
Wheatstone bridge anti-side-tone circuit that can be used
as an alternative. Both bridge types can be used with
either resistive or complex set impedances.
with 32 dB. The attenuation is nearly flat over the
audio-frequency range.
Instead of the previously-described special TEA1066
bridge, the conventional Wheatstone bridge configuration
can be used as an alternative anti-side-tone circuit. Both
bridge types can be used with either a resistive set
impedance or a complex set impedance.
The anti-side-tone network as used in the standard
application (see Fig.13) attenuates the signal from the line
LN
R1
R2
Z
line
IR
i
m
V
R
t
EE
R3
R9
R8
Z
bal
SLPE
MSA500 - 1
Fig.4 Equivalent circuit of TEA1060 family anti-side-tone bridge.
LN
Z
R1
bal
Z
line
IR
i
m
V
R
t
EE
R9
R8
R
A
SLPE
MSA501 - 1
Fig.5 Equivalent circuit of an anti-side-tone network in a Wheatstone bridge configuration.
1996 Apr 04
7
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VLN
PARAMETER
CONDITIONS
MIN.
MAX.
12
UNIT
positive continuous line voltage
−
−
V
V
VLN(R)
repetitive line voltage during switch-on or
line interruption
13.2
VLN(RM)
repetitive peak line voltage for a 1 ms pulse R9 = 20 Ω;
−
28
V
per 5 s
R10 = 13 Ω; (Fig.10)
Iline
Vn
line current
R9 = 20 Ω; note 1
R9 = 20 Ω; note 2
−
V
−
140
mA
V
voltage on any other pin
total power dissipation
IC storage temperature
operating ambient temperature
junction temperature
EE − 0.7 VCC + 0.7
Ptot
Tstg
Tamb
Tj
555
mW
°C
°C
°C
−40
−25
−
+125
+75
125
Notes
1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE (see Fig.6).
2. Calculated for the maximum ambient temperature specified, Tamb = 75 °C and a maximum junction temperature of
125 °C.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
thermal resistance from junction to ambient in free air mounted on glass epoxy
90
K/W
board 41 × 19 × 1.5 mm
1996 Apr 04
8
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
MBH125
150
LN
handbook, halfpage
I
(mA)
130
110
90
(1)
(2)
(3)
(4)
70
50
30
2
4
6
8
10
− V
12
V
(V)
LN
SLPE
(1) Tamb = 45 °C; Ptot = 888 mW.
(2) Tamb = 55 °C; Ptot = 777 mW.
(3) Tamb = 65 °C; Ptot = 666 mW.
(4) Tamb = 75 °C; Ptot = 555 mW.
Fig.6 Safe operating area.
CHARACTERISTICS
Iline = 10 to 100 mA; VEE = 0 V; f = 800 Hz; R9 = 20 Ω; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Supplies: LN and VCC (pins 1 and 17)
VLN
voltage drop over circuit between
LN and VEE
Iline = 5 mA
3.95
4.25
5.40
−
4.25
4.45
6.10
−
4.55
4.65
6.70
7.50
0
V
Iline = 15 mA
Iline = 100 mA
Iline = 140 mA
Iline = 15 mA
V
V
V
∆VLN/∆T
voltage drop variation with
temperature
−4
−2
mV/K
VLN
voltage drop over circuit between
LN and VEE with external resistor
RVA
Iline = 15 mA;
RVA = R1-18 = 68 kΩ
3.50
4.70
3.80
5
4.05
5.30
V
V
Iline = 15 mA;
RVA = R18-20 = 39 kΩ
ICC
supply current
PD = LOW; VCC = 2.8 V
PD = HIGH; VCC = 2.8 V
−
0.96
55
1.30
82
−
mA
µA
V
−
VCC
supply voltage available for
peripheral circuits
Iline = 15 mA; MUTE = HIGH;
Ip = 0 mA
3.50
3.75
Iline = 15 mA; MUTE = HIGH;
Ip = 1.2 mA
2.80
3.05
−
V
1996 Apr 04
9
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Microphone inputs MICL+ and MICL−; MICH+ and MICH−
Zi
input impedance
MICL+ (pin 9); MICL− (pin 7)
MICH+ (pin 10); MICH− (pin 8)
common mode rejection ratio
voltage gain
3.3
4.1
20.4
82
4.9
24.5
−
kΩ
kΩ
dB
16.5
CMRR
Gv
−
Iline = 15 mA; R7 = 68 Ω
MICL+/MICL− to LN
51
52
53
dB
dB
dB
MICH+/MICH− to LN
37
38
39
∆Gvf
gain variation with frequency at
f = 300 Hz and 3400 Hz
with respect to 800 Hz
−0.5
±0.2
+0.5
∆GvT
gain variation with temperature at
Tamb = −25 °C and +75 °C
Iline = 50 mA; with respect to
800 Hz
−
±0.2
−
dB
Dual-tone multi-frequency input DTMF (pin 15)
Zi
input impedance
16.8
24.5
−0.5
20.7
25.5
±0.2
24.6
26.5
+0.5
kΩ
dB
dB
Gv
voltage gain from DTMF to LN
Iline = 15 mA; R7= 68 kΩ
∆Gvf
gain variation with frequency at
f = 300 Hz and 3400 Hz
with respect to 800 Hz
∆GvT
gain variation with temperature at
Iline = 50 mA; with respect
−
±0.2
−
dB
Tamb = −25 °C and +75 °C
to 25 °C
Gain adjustment connections GAS1 and GAS2 (pins 2 and 3)
∆Gv
gain variation with R7, transmitting
amplifier
−8
−
+8
dB
Transmitting amplifier output LN (pin 1)
VLN(rms)
output voltage (RMS value)
Iline = 15 mA; THD = 2%
Iline = 15 mA; THD = 10%
1.9
−
2.3
2.6
−70
−
−
−
V
V
Vno(rms)
noise output voltage (RMS value)
Iline = 15 mA; R7 = 68 kΩ;
microphone inputs open;
psophometrically weighted
(P53 curve)
−
dBmp
Receiving amplifier input IR (pin 13)
Zi input impedance
Receiving amplifier outputs QR+ and QR− (pins 5 and 4)
Zo output impedance single-ended
Gv
17
21
4
25
kΩ
−
−
Ω
voltage gain from IR to QR+ or QR− Iline = 15 mA; R4 = 100 kΩ
single-ended; RL = 300 Ω
24
25
26
dB
dB
dB
differential; RL = 600 Ω
30
31
32
∆Gvf
gain variation with frequency at
f = 300 Hz and 3400 Hz
with respect to 800 Hz
−0.5
±0.2
+0.5
∆GvT
gain variation with temperature at
Iline = 50 mA; with respect to
−
±0.2
−
dB
Tamb = −25 °C and +75 °C
25 °C
1996 Apr 04
10
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Vo(rms)
output voltage (RMS value)
sine-wave drive; Iline = 15 mA;
Ip = 0 mA; THD = 2%;
R4 = 100 kΩ
single-ended; RL = 150 Ω
single-ended; RL = 450 Ω
0.30
0.40
0.80
0.38
0.52
1.0
−
−
−
V
V
V
differential; CL = 47 nF;
Rseries = 100 Ω; f = 3400 Hz
Vno(rms)
noise output voltage (RMS value)
Iline = 15 mA; R4 = 100 kΩ;
pin 13 (IR) open;
psophometrically weighted
(P53 curve)
single-ended; RL = 300 Ω
differential; RL = 600 Ω
−
−
50
−
−
µV
µV
100
Gain adjustment GAR (pin 6)
∆Gv gain variation with R4 connected
−8
−
+8
dB
between pin 6 and pin 5 receiving
amplifier
MUTE input (pin 16)
VIH
HIGH level input voltage
1.50
−
VCC
0.3
10
−
V
VIL
LOW level input voltage
input current
−
−
−
−
V
IMUTE
∆Gv
5
µA
dB
voltage gain reduction between
MICL+ (pin 9) and MICL− (pin 7) to
LN (pin 1)
MUTE = HIGH
70
Gv
voltage gain from DTMF to QR+ or MUTE = HIGH; R4 = 100 kΩ;
−21
−19
−17
dB
QR−
single-ended; RL = 300 Ω
Power-down input PD (pin 14)
VIH
VIL
IPD
HIGH level input voltage
LOW level input voltage
1.5
−
−
−
5
VCC
0.3
10
V
V
input current in power-down
condition
−
µA
1996 Apr 04
11
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Automatic gain control input AGC (pin 19)
∆Gv
gain control range from IR to
QR+/QR− and from MIC+/MIC− to
LN
Iline = 70 mA; R6 = 110 kΩ
between AGC and VEE
−5.5
−5.9
−6.3
dB
Iline(H)
Iline(L)
∆Gv
highest line current for maximum
gain
R6 = 110 kΩ between AGC and
VEE
−
23
−
mA
mA
dB
lowest line current for minimum gain R6 = 110 kΩ between AGC and
−
61
−
VEE
voltage gain variation
between Iline = 15 mA and
Iline = 35 mA; R6 = 110 kΩ
between AGC and VEE
−1.0
−1.5
−2.0
R
I
R1
line
line
I
I
+ 0.5 mA
CC
17
SLPE
1
I
p
LN
V
CC
TEA1066T
R
exch
DC
AC
0.5 mA
peripheral
circuits
C1
V
V
exch
REG
18
STAB
SLPE
20
EE
11
12
I
SLPE
R5
C3
R9
MBH123
Fig.7 Supply arrangement.
1996 Apr 04
12
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
MBH124
3
handbook, halfpage
(1)
I
p
(mA)
(2)
2
(3)
1
(4)
0
0
1
2
3
4
V
(V)
CC
Curves (1) and (3) are valid when the receiving amplifier is not driven or when MUTE = HIGH. Curves (2) and (4) are valid when MUTE = LOW and the
receiving amplifier is driven, Vo(rms) = 150 mV, RL = 150 Ω (asymmetrical). Iline = 15 mA; VLN = 4.45 V; R1 = 620 Ω and R9 = 20 Ω.
(1) Ip = 2.55 mA.
(2)
Ip = 2.1 mA.
(3) Ip = 1.2 mA.
(4) Ip = 0.75 mA.
Fig.8 Typical current Ip available from VCC for external (peripheral) circuitry with VCC > 2.2 V and VCC > 3 V.
17
V
CC
9
8
10
8
MICL+
MICL−
MICH−
MICH+
(1)
7
10
MICH+
MICH−
V
EE
12
MBH121
a. Magnetic or dynamic
microphone.
b. Electret microphone.
c. piezoelectric microphone.
(1) May be connected to lower the terminating impedance.
Fig.9 Alternative microphone arrangements.
1996 Apr 04
13
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
(1)
(2)
5
5
5
4
5
4
QR+
QR+
QR−
QR+
QR−
QR+
4
QR−
4
12
V
QR−
EE
MBH122
a. Dynamic earpiece
with less than 450 Ω
impedance.
b. Dynamic earpiece with
more than 450 Ω
impedance.
c. Magnetic earpiece
with more than 450 Ω
impedance.
d. piezoelectric
earpiece.
(1) May be connected to prevent distortion (inductive load).
(2) Required to increase the phase margin (capacitive load).
Fig.10 Alternative receiver arrangements.
MBH126
R6 = ∞
0
∆G
v
(dB)
−2
−4
−6
48.7 kΩ 78.7 kΩ 110 kΩ 140 kΩ
0
20
40
60
80
100
120
140
(mA)
I
line
R9 = 20 Ω.
Fig.11 Variation of gain with line current, with R6 as a parameter.
14
1996 Apr 04
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
Table 1 Values of resistor R6 for optimum line loss compensation, for various usual values of exchange supply
voltage Vexch and exchange feeding bridge resistance Rexch; R9 = 20 Ω
R6 (kΩ)
Vexch (V)
Rexch = 400 Ω
Rexch = 600 Ω
Rexch = 800 Ω
Rexch = 1000 Ω
24
36
48
60
61.9
100
140
X
48.7
78.7
110
X
X
X
68
60.4
82
93.1
120
102
I
R1
line
V
620 Ω
17
1
4
5
LN
13
V
100 µF
CC
QR−
QR+
IR
R
o
9, 10
7, 8
15
L
MICL+/MICH+
MICL−/MICH−
DTMF
600 Ω
V
i
C4
100 pF
R4
100 kΩ
6
2
GAR
TEA1066T
100 µF
C7 1 nF
C1
16
GAS1
10 to 140 mA
MUTE
R7
68 kΩ
10 µF
14
3
PD
V
C6
100 pF
GAS2
V
i
EE
12
REG AGC STAB SLPE
18
19
11
20
C3
4.7
µF
R5
3.6
kΩ
R9
20 Ω
R6
MBH127
Voltage gain is defined as: Gv = 20 log Vo/Vi . For measuring the gain from MICL+, MICL− or MICH+ and MICH−, the MUTE input should be LOW or
open; for measuring the DTMF input, MUTE should be HIGH. Inputs not under test should be open.
Fig.12 Test circuit for defining voltage gain of MICL+, MICL−, MICH+ and MICH− DTMF inputs.
1996 Apr 04
15
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
I
R1
line
620 Ω
17
1
100 µF
4
5
LN
13
V
CC
QR−
QR+
IR
600 Ω
Z
V
o
9, 10
L
MICL+/MICH+
MICL−/MICH−
DTMF
10 µF
V
7, 8
15
R4
C4
100 pF
i
100
kΩ
6
2
TEA1066T
GAR
C7 1 nF
C1
16
GAS1
100 µF
10 to 140 mA
MUTE
R7
14
C6
100 pF
3
PD
V
GAS2
EE
12
REG AGC STAB SLPE
18
19
11
20
C3
4.7
µF
R5
3.6
kΩ
R9
20 Ω
R6
MBH128
Voltage gain is defined as: Gv = 20 log Vo/Vi .
Fig.13 Test circuit for defining voltage gain of the receiving amplifier.
1996 Apr 04
16
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
APPLICATION INFORMATION
R1
C1
620 Ω
100 µF
R10
13 Ω
R2
130 kΩ
1
17
LN
V
CC
C5
100 nF
R11
13
4
IR
BAS11
(2x)
QR−
5
6
15
16
14
QR+
DTMF
MUTE
PD
from dial
and
control
circuits
C4
100 pF
R4
R3
3.92
telephone
line
TEA1066T
BZW14
(2x)
GAR
1 nF
kΩ
C7
9, 10
7, 8
MICL+/MICH+
MICL−/MICH−
V
SLPE
20
GAS1 GAS2 REG
AGC
STAB
11
EE
2
3
18
19
12
R8
390 Ω
R7
R5
3.6 kΩ
C3
4.7 µF
C6
100 pF
R6
Z
bal
R9
20 Ω
MBH129
Typical application of the TEA1066, shown with a piezoelectric earpiece and DTMF dialling. The bridge to the left and R10 limit the current into the
circuit and the voltage across the circuit during line transients. Pulse dialling or register recall require a different protection arrangement.
Fig.14 Application diagram.
1996 Apr 04
17
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
LN
V
V
DD
CC
DTMF
MUTE
PD
TONE
cradle
contact
PCD3310
TEA1066T
M1
DP/FLO
V
V
EE
SS
telephone
line
BSN254A
MEA008 - 1
The dashed lines show an optional flash (register recall by timed loop break).
Fig.15 DTMF pulse set with CMOS PCD3310 dialling circuit.
1996 Apr 04
18
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
PACKAGE OUTLINE
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
y
H
E
v
M
A
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
0.25
0.01
1.27
0.050
1.4
0.25
0.01
0.25
0.1
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.51
0.014 0.009 0.49
0.30
0.29
0.42
0.39
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-01-24
SOT163-1
075E04
MS-013AC
1996 Apr 04
19
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
SOLDERING
Introduction
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1996 Apr 04
20
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Apr 04
21
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
NOTES
1996 Apr 04
22
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1066T
NOTES
1996 Apr 04
23
Philips Semiconductors – a worldwide company
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For all other countries apply to: Philips Semiconductors,
Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Fax. +31-40-2724825
SCDS48
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
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Tel. (022) 74 8000, Fax. (022) 74 8341
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106 Valero St. Salcedo Village, P.O. Box 2108 MCC,
MAKATI, Metro MANILA,
Printed in The Netherlands
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Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. (022) 612 2831, Fax. (022) 612 2327
417021/10/02/pp24
Date of release: 1996 Apr 04
9397 750 00783
Document order number:
相关型号：
TEA1067N
IC TELEPHONE SPEECH CKT, PDIP18, 0.300 INCH, PLASTIC, SOT-102, DIP-18, Telephone Circuit
NXP
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