TEA1067TD-T [NXP]
IC TELEPHONE SPEECH CKT, PDSO20, PLASTIC, SOT-163, SO-20, Telephone Circuit;
| 型号： | TEA1067TD-T |
| 厂家： | 
NXP |
| 描述： | IC TELEPHONE SPEECH CKT, PDSO20, PLASTIC, SOT-163, SO-20, Telephone Circuit 电信集成电路 电信电路 电话电路 光电二极管 |
| 文件： | 总28页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1067
Low voltage versatile telephone
transmission circuit with dialler
interface
June 1990
Product specification
File under Integrated Circuits, IC03A
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
• Asymmetrical high-impedance input (32 kΩ) for electret
GENERAL DESCRIPTION
microphone
The TEA1067 is a bipolar integrated circuit performing all
speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between dialling and speech. The circuit is able to operate
down to a DC line voltage of 1.6 V (with reduced
performance) to facilitate the use of more telephone sets
in parallel.
• DTMF signal input with confidence tone
• Mute input for pulse or DTMF dialling
• Power down input for pulse dial or register recall
• Receiving amplifier for magnetic, dynamic or
piezoelectric earpieces
• Large gain setting range on microphone and earpiece
amplifiers
Features
• Line current dependent line loss compensation facility
for microphone and earpiece amplifiers
• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)
• Gain control adaptable to exchange supply
• DC line voltage adjustment capability
• Voltage regulator with adjustable static resistance
• Provides supply with limited current for external circuitry
• Symmetrical high-impedance inputs (64 kΩ) for
dynamic, magnetic or piezoelectric microphones
QUICK REFERENCE DATA
PARAMETER
Line voltage
CONDITIONS
line = 15 mA
SYMBOL
VLN
MIN.
3.65
TYP.
3.9
MAX. UNIT
I
4.15
V
Line current operating range
normal operation
TEA1067
Iline
Iline
Iline
11
11
1
−
−
−
140
140
11
mA
mA
mA
TEA1067T
with reduced performance
power down
Internal supply current
input LOW
ICC
ICC
−
−
1
1.35
82
mA
input HIGH
55
µA
Supply voltage for peripherals
Iline = 15 mA; Ip = 1.4 mA;
mute input HIGH
VCC
VCC
2.2
2.5
2.4
−
−
V
V
Iline = 15 mA; Ip = 0.9 mA;
mute input HIGH
−
Voltage gain range
microphone amplifier
receiving amplifier
Gv
Gv
44
20
−
−
52
45
dB
dB
Line loss compensation
gain control range
∆Gv
5.5
36
5.9
6.3
60
dB
V
Exchange supply voltage range
Exchange feeding bridge
resistance range
Vexch
−
Rexch
0.4
−
1
kΩ
PACKAGE OUTLINES
TEA1067: 18-lead DIL; plastic (SOT102). SOT102-1; 1998 Jun 18.
TEA1067T: 20-lead mini-pack; plastic (SO20; SOT163A). SOT163-1; 1998 Jun 18.
June 1990
2
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
V
LN
(1)1
CC
15 (17)
(6) 6
GAR
11 (12)
IR
(5) 5
(4) 4
−
+
QR+
QR−
+
−
TEA1067
TEA1067T
8 (9)
7 (7)
(2) 2
(3) 3
MIC+
MIC−
+
−
+
+
−
GAS1
GAS2
(1)
dB
−
−
+
+
−
13 (15)
dB
DTMF
MUTE
PD
14 (16)
12 (14)
SUPPLY AND
REFERENCE
LOW
VOLTAGE
CIRCUIT
AGC
CIRCUIT
CURRENT
REFERENCE
10 (11)
16 (18) 17 (19)
9 (10)
(20)18
V
MGR082
REG
AGC
STAB
SLPE
EE
Figures in parenthesis refer to TEA1067T.
Fig.1 Block diagram.
June 1990
3
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
PINNING
1
2
3
4
5
6
7
8
9
LN
positive line terminal
GAS1
GAS2
QR−
QR+
GAR
MIC−
MIC+
STAB
gain adjustment; transmitting amplifier
gain adjustment; transmitting amplifier
inverting output; receiving amplifier
non-inverting output receiving amplifier
gain adjustment; receiving amplifier
inverting microphone input
non-inverting microphone input
current stabilizer
handbook, halfpage
LN
GAS1
GAS2
QR−
SLPE
AGC
REG
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
V
CC
QR+
MUTE
DTMF
PD
TEA1067
GAR
10 VEE
11 IR
negative line terminal
receiving amplifier input
MIC−
MIC+
STAB
12 PD
power-down input
IR
13 DTMF
14 MUTE
15 VCC
16 REG
17 AGC
18 SLPE
dual-tone multi-frequency input
mute input
V
EE
MGR084
positive supply decoupling
voltage regulator decoupling
automatic gain control input
slope (DC resistance) adjustment
Fig.2 Pinning diagram for TEA1067 18-lead DIL
version.
1
2
3
4
5
6
7
8
9
LN
positive line terminal
GAS1
GAS2
QR−
QR+
GAR
MIC−
n.c.
gain adjustment; transmitting amplifier
gain adjustment; transmitting amplifier
inverting output; receiving amplifier
non-inverting output receiving amplifier
gain adjustment, receiving amplifier
inverting microphone input
not connected
handbook, halfpage
LN
GAS1
GAS2
QR−
20
19
SLPE
AGC
1
2
3
18 REG
V
17
4
CC
QR+
16 MUTE
15 DTMF
5
MIC+
non-inverting microphone input
current stabilizer
TEA1067T
GAR
MIC−
n.c.
6
10 STAB
11 VEE
PD
7
14
negative line terminal
12 IR
receiving amplifier input
8
13 n.c.
13 n.c.
not connected
MIC+
STAB
IR
V
9
12
11
14 PD
power-down input
10
EE
15 DTMF
16 MUTE
17 VCC
18 REG
19 AGC
20 SLPE
dual-tone multi-frequency input
mute input
MGR083
positive supply decoupling
voltage regulator decoupling
automatic gain control input
slope (DC resistance) adjustment
Fig.3 Pinning diagram for TEA1067T 20-lead
mini-pack version.
June 1990
4
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
In normal use the value of R9 would be 20 Ω. Changing the
value of R9 will also affect microphone gain, DTMF gain,
gain control characteristics, side-tone level and maximum
output swing on LN, and the DC characteristics (especially
at the lower voltages).
FUNCTIONAL DESCRIPTION
Supply: VCC, LN, SLPE, REG and STAB
Power for the TEA1067 and its peripheral circuits is usually
obtained from the telephone line. The IC develops its own
supply at VCC and regulates its voltage drop. The supply
voltage VCC may also be used to supply external circuits
e.g. dialling and control circuits.
Under normal conditions, when ISLPE >> ICC + 0.5 mA + Ip,
the static behaviour of the circuit is that of a 3.6 V regulator
diode with an internal resistance equal to that of R9. In the
audio frequency range the dynamic impedance is largely
determined by R1. Fig.4 shows the equivalent impedance
of the circuit.
Decoupling of the supply voltage is performed by a
capacitor between VCC and VEE while the internal voltage
regulator is decoupled by a capacitor between REG and
VEE
.
At line currents below 9 mA the internal reference voltage
is automatically adjusted to a lower value (typically 1.6 V
at 1 mA). This means that the operation of more sets in
parallel is possible with DC line voltages (excluding the
polarity guard) down to an absolute minimum voltage of
1.6 V. With line currents below 9 mA the circuit has limited
sending and receiving levels. The internal reference
voltage can be adjusted by means of an external resistor
(RVA). This resistor connected between LN and REG will
decrease the internal reference voltage, connected
between REG and SLPE it will increase the internal
reference voltage.
The DC current drawn by the device will vary in
accordance with varying values of the exchange voltage
(Vexch), the feeding bridge resistance (Rexch), and the DC
resistance of the telephone line (Rline).
The TEA1067 has an internal current stabilizer working at
a level determined by a 3.6 kΩ resistor connected
between STAB and VEE (see Fig.7). When the line current
(Iline) is more than 0.5 mA greater than the sum of the IC
supply current (ICC) and the current drawn by the
peripheral circuitry connected to VCC (Ip) the excess
current is shunted to VEE via LN.
Current (Ip) available from VCC for peripheral circuits
depends on the external components used. Fig.10 shows
this current for VCC > 2.2 V. If MUTE is LOW when the
receiving amplifier is driven the available current is further
reduced. Current availability can be increased by
connecting the supply IC (TEA1081) in parallel with R1, as
shown in Fig.17 (c), or by increasing the DC line voltage by
means of an external resistor (RVA) connected between
REG and SLPE.
The regulated voltage on the line terminal (VLN) can be
calculated as:
VLN = Vref + ISLPE × R9; or
VLN = Vref + [(Iline − ICC − 0.5 × 10−3 A) − Ip] × R9
Where Vref is an internally generated temperature
compensated reference voltage of 3.6 V and R9 is an
external resistor connected between SLPE and VEE
.
June 1990
5
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
Dual-tone multi-frequency input (DTMF)
LN
handbook, halfpage
When the DTMF input is enabled dialling tones may be
sent onto the line. The voltage gain from DTMF to LN is
typically 25.5 dB (when R7 = 68 kΩ) and varies with R7 in
the same way as the microphone gain. The signalling
tones can be heard in the earpiece at a low level
(confidence tone).
L
R
R1
eq
p
V
REG
V
CC
ref
C1
100 µF
C3
4.7 µF
R9
20 Ω
Receiving Amplifier (IR, QR+, QR− and GAR)
V
EE
MBA454
The receiving amplifier has one input (IR), one
Rp = 16.2 kΩ
non-inverting complementary output (QR+) and an
inverting complementary output (QR−). These outputs
may be used for single-ended or differential drive
depending on the sensitivity and type of earpiece used
(see Fig.12). IR to QR + gain is typically 31 dB (when
R4 = 100 kΩ), this is sufficient for low-impedance
magnetic or dynamic microphones which are suited for
single-ended drive. Using both outputs for differential drive
gives an additional gain of 6 dB. This feature can be used
when the earpiece impedance exceeds 450 Ω
Leq = C3 × R9 × Rp
Fig.4 Equivalent impedance circuit.
Microphone inputs (MIC+ and MIC−) and gain
adjustment pins (GAS1 and GAS2)
The TEA1067 has symmetrical microphone inputs. Its
input impedance is 64 kΩ (2 × 32 kΩ) and its voltage gain
is typically 52 dB (when R7 = 68 kΩ, see Fig.14). Dynamic,
magnetic, piezoelectric or electret (with built-in FET source
followers) microphones can be used. Microphone
arrangements are shown in Fig.11.
(high-impedance dynamic or piezoelectric types).
The receiving amplifier gain can be adjusted between 20
and 39 dB with single-ended drive and between 26 and
45 dB with differential drive, to match the sensitivity of the
transducer in use. The gain is set with the value of R4
which is connected between GAR and QR+. Overall
receive gain between LN and QR+ is calculated by
substracting the anti-sidetone network attenuation (32 dB)
from the amplifier gain. Two external capacitors C4 and
C7, ensure stability. C4 is normally 100 pF and C7 is
10 × the value of C4. The value of C4 may be increased to
obtain a first-order low-pass filter. The cut-off frequency
will depend on the time constant R4 × C4.
The gain of the microphone amplifier can be adjusted
between 44 dB and 52 dB to suit the sensitivity of the
transducer in use. The gain is proportional to the value of
R7 which is connected between GAS1 and GAS2. Stability
is ensured by the external capacitor C6 which is connected
between GAS1 and SLPE. The value of C6 is 100 pF but
this may be increased to obtain a first-order low-pass filter.
The cut-off frequency corresponds to the time constant
R7 × C6.
The output voltage of the receiving amplifier is specified for
continuous-wave drive. The maximum output voltage will
be higher under speech conditions where the peak to RMS
ratio is higher.
Mute input (MUTE)
When MUTE is HIGH the DTMF input is enabled and the
microphone and receiving amplifier inputs are inhibited.
The reverse is true when MUTE is LOW or open-circuit.
MUTE switching causes only negligible clicking on the
earpiece outputs and line. If the number of parallel sets in
use causes a drop in line current to below 6 mA the speech
amplifiers remain active independent to the DC level
applied to the MUTE input.
June 1990
6
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
Side-tone suppression
The anti-sidetone network, R1//Zline, R2, R3, R9 and Zbal
(see Fig.5) suppresses transmitted signal in the earpiece.
Compensation is maximum when the following conditions
are fulfilled:
Automatic gain control input (AGC)
,
Automatic line loss compensation is achieved by
connecting a resistor (R6) between AGC and VEE. The
automatic gain control varies the gain of the microphone
amplifier and the receiving amplifier in accordance with the
DC line current. The control range is 5.9 dB. This
corresponds to a line length of 5 km for a 0.5 mm diameter
copper twisted-pair cable with a DC resistance of
176 Ω/km and an average attenuation 1.2 dB/km. Resistor
R6 should be chosen in accordance with the exchange
supply voltage and its feeding bridge resistance (see
Fig.13 and Table 1). The ratio of start and stop currents of
the AGC curve is independent of the value of R6. If no
automatic line loss compensation is required the AGC may
be left open-circuit. The amplifiers, in this condition, will
give their maximum specified gain.
(a) R9 × R2 = R1 (R3 + [R8//Zbal]);
(b) (Zbal / [Zbal + R8]) = (Zline / [Zline + R1])
If fixed values are chosen for R1, R2, R3, and R9 then
condition (a) will always be fulfilled when R8//Zbal << R3.
To obtain optimum side-tone suppression condition (b)
has to be fulfilled resulting in:
Zbal = (R8/R1) Zline = k.Zline where k is a scale factor;
k = (R8/R1)
The scale factor (k), dependent on the value of R8, is
chosen to meet the following criteria:
Power-down input (PD)
(a) Compatibility with a standard capacitor from the E6 or
E12 range for Zbal
During pulse dialling or register recall (timed loop break)
the telephone line is interrupted. During these interruptions
the telephone line provides no power for the transmission
circuit or circuits supplied by VCC. The charge held on C1
will bridge these gaps. This bridging is made easier by a
HIGH level on the PD input which reduces the typical
supply current from 1 mA to 55 µA and switches off the
voltage regulator preventing discharge through LN. When
PD is HIGH the capacitor at REG is disconnected with the
effect that the voltage stabilizer will have no switch-on
delay after line interruptions. This minimizes the
(b) Zbal//R8 << R3 to fulfil condition (a) and thus
ensuring correct anti-sidetone bridge operation
(c)
Zbal + R8 >> R9 to avoid influencing the transmitter
gain
In practice Zline varies considerably with the line type and
length. The value chosen for Zbal should therefore be for
an average line length thus giving optimum setting for
short or long lines.
contribution of the IC to the current waveform during pulse
dialling or register recall. When this facility is not required
PD may be left open-circuit.
June 1990
7
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
The anti-sidetone network for the TEA1060 family shown
in Fig.5 attenuates the signal received from the line by 32
dB before it enters the receiving amplifier. The attenuation
is almost constant over the whole audio frequency range.
Fig.6 shows a conventional Wheatstone bridge
anti-sidetone circuit that can be used as an alternative.
Both bridge types can be used with either resistive or
complex set impedances.
Example
The line balance impedance (Zbal) at which the optimum
suppression is present can be calculated by:
suppose Zline = 210 Ω + (1265 Ω//140 nF), representing a
5 km line of 0.5 mm diameter, copper, twisted-pair cable
matched to 600 Ω (176 Ω/km; 38 nF/km).
When k = 0.64 then R8 = 390 Ω;
Zbal = 130 Ω + (820 Ω//220 nF).
LN
R1
R9
R2
Z
line
V
IR
i
m
EE
R
t
R3
Z
R8
bal
SLPE
MSA500
Fig.5 Equivalent circuit of TEA1060 anti-sidetone bridge.
LN
R1
R9
Z
bal
Z
line
V
IR
i
m
EE
R
t
R8
R
A
SLPE
MSA501
Fig.6 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
More information can be found in the designer guide; 9398 341 10011
June 1990
8
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER
CONDITIONS
SYMBOL
VLN
MIN.
MAX.
12
UNIT
Positive continuous line voltage
Repetitive line voltage during
switch-on line interruption
Repetitive peak line voltage for a
1 ms pulse per 5 s
−
−
V
V
VLN
13.2
R9 = 20 Ω;
R10 = 13 Ω
(Fig.16)
VLN
Iline
Iline
Vi
−
−
−
−
−
28
V
Line current TEA1067 (note 1)
Line current TEA1067T (note 1)
Voltage on all other pins
R9 = 20 Ω
R9 = 20 Ω
140
140
mA
mA
V
V
CC + 0.7
−Vi
0.7
V
Total power dissipation (note 2)
TEA1067
R9 = 20 Ω
Ptot
Ptot
Tstg
Tamb
Tj
−
−
769
mW
mW
°C
TEA1067T
550
Storage temperature range
Operating ambient temperature range
Junction temperature
−40
−25
−
+ 125
+ 75
+ 125
°C
°C
Notes
1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE.
See Figs 7 and 8 to determine the current as a function of the required voltage and the
temperature.
2. Calculated for the maximum ambient temperature specified Tamb = 75 °C and a maximum
junction temperature of 125 °C.
THERMAL RESISTANCE
From junction to ambient in free air
TEA1067
Rth j-a
Rth j-a
typ.
typ.
65
90
K/W
K/W
TEA1067T mounted on glass epoxy board 41 × 19 × 1.5 mm
June 1990
9
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
MBH133
160
LN
handbook, halfpage
I
(mA)
140
(1)
120
(2)
100
(3)
80
(4)
60
40
Tamb
Ptot
(1) 45 °C
(2) 55 °C
(3) 65 °C
(4) 75 °C
1231 mW
1077 mW
923 mW
769 mW
2
4
6
8
10
-V
12
V
(V)
LN SLPE
Fig.7 TEA1067 safe operating area.
MSA546
150
LN
handbook, halfpage
I
(mA)
130
110
90
(1)
(2)
70
(3)
(4)
50
Tamb
Ptot
30
2
4
6
8
10
-V
12
(1) 45 °C
(2) 55 °C
(3) 65 °C
(4) 75 °C
888 mW
777 mW
666 mW
555 mW
V
(V)
LN SLPE
Fig.8 TEA1067T safe operating area.
10
June 1990
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
CHARACTERISTICS
Iline = 11 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 °C; unless otherwise specified
PARAMETER
CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply; LN and VCC
Voltage drop over circuit,
between LN and VEE
microphone inputs open
I
line = 1 mA
Iline = 4 mA
VLN
−
1.6
−
V
V
V
V
V
V
V
VLN
1.75
2.25
3.55
3.65
4.9
2.0
2.8
3.8
3.9
5.6
−
2.25
3.35
4.05
4.15
6.5
Iline = 7 mA
VLN
Iline = 11 mA
VLN
Iline = 15 mA
VLN
I
line = 100 mA
line = 140 mA
VLN
I
VLN
−
7.5
Variation with temperature
Voltage drop over circuit,
between LN and VEE with
external resistor RVA
Iline = 15 mA
∆VLN/∆T
−3
−1
1
mV/K
Iline = 15 mA;
R
VA (LN to REG)
= 68 kΩ
3.1
3.4
3.7
V
Iline = 15 mA;
R
VA (REG to SLPE)
= 39 kΩ
4.2
−
4.5
1.0
55
4.8
1.35
82
V
Supply current
Supply current
PD = LOW;
V
CC = 2.8 V
PD = HIGH;
CC = 2.8 V
ICC
mA
µA
V
ICC
−
Supply voltage available for
peripheral circuitry
Iline = 15 mA;
MUTE = HIGH
Ip = 1.4 mA
Ip = 0 mA
VCC
VCC
2.2
2.4
3.2
−
−
V
V
2.95
Microphone inputs
MIC+ and MIC−
Input impedance (differential)
between MIC− and MIC+
Input impedance (single-ended)
MIC− or MIC+ to VEE
Zi
51
64
77
kΩ
Zi
25.5
32
82
38.5
kΩ
Common mode rejection ratio
Voltage gain
kCMR
−
−
dB
MIC+/MIC− to LN
Iline = 15 mA;
R7 = 68 kΩ
Gv
51
52
53
dB
June 1990
11
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
PARAMETER
CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Gain variation with frequency
at f = 300 Hz
and f = 3400 Hz
w.r.t 800 Hz
∆Gvf
−0.5
± 0.2
+0.5
dB
Gain variation with temperature
at −25 °C
and + 75 °C
w.r.t. 25 °C
without R6;
Iline = 50 mA
∆GvT
−
± 0.2
−
dB
Dual-tone multi-frequency
input DTMF
Input impedance
Zi
Gv
16.8
24.5
−0.5
20.7
25.5
±0.2
24.6
26.5
+0.5
kΩ
dB
dB
Voltage gain from DTMF to LN
Iline = 15 mA;
R7 = 68 kΩ
Gain variation with frequency
at f = 300 Hz and f = 3400 Hz w.r.t. 800 Hz
Gain variation with temperature
∆Gvf
at −25 °C and +75 °C
w.r.t. 25 °C
Iline = 50 mA
∆GvT
−
±0.2
−
dB
Gain adjustment
GAS1 and GAS2
Gain variation of the
transmitting amplifier by
varying R7 between GAS1
and GAS2
∆Gv
−8
−
0
dB
Sending amplifier output LN
Output voltage
Iline = 15 mA
THD = 2%
VLN(rms)
VLN(rms)
−
1.9
2.2
−
−
V
V
THD = 10%
1.9
I
line = 4 mA;
THD = 10%
line = 7 mA;
THD = 10%
line = 15 mA;
VLN(rms)
−
−
0.8
1.4
−
−
V
V
I
VLN(rms)
Noise output voltage
I
R7 = 68 kΩ;
200 Ω between
MIC− and MIC+;
psophometrically
weighted (P53 curve) Vno(rms)
−
−72
−
dBmp
Receiving amplifier input IR
Input impedance
Zi
17
21
25
kΩ
June 1990
12
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
PARAMETER
CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Receiving amplifier outputs
QR+ and QR−
Output impedance
(single-ended)
Zo
−
4
−
Ω
Voltage gain from IR to
QR+ or QR−
Iline = 15 mA
R4 = 100 kΩ
single-ended
differential
RL (from QR+ or
QR−) = 300 Ω
RL (from QR+ or
QR−) = 600 Ω
Gv
30
36
31
37
32
38
dB
dB
Gv
Gain variation with frequency
at f = 300 Hz
and f = 3400 Hz
w.r.t. 800 Hz
∆Gvf
−0.5
−0.2
±0.2
0
dB
dB
Gain variation with temperature
at −25 °C and +75 °C
w.r.t. 25 °C
without R6;
I
line = 50 mA
sinewave drive
line = 15 mA;
∆GvT
−
−
Output voltage
I
Ip = 0 mA; THD = 2%
R4 = 100 kΩ
RL = 150 Ω
single-ended
differential
Vo(rms)
Vo(rms)
0.25
0.45
0.29
0.55
−
−
V
V
RL = 450 Ω
f = 3400 Hz;
series R = 100 Ω;
CL = 47 nF
Vo(rms)
0.65
0.80
−
V
Output voltage
THD = 10%;
RL = 150 Ω
R4 = 100 kΩ
Iline = 4 mA
Iline = 7 mA
Iline = 15 mA;
Vo(rms)
Vo(rms)
−
−
15
−
−
mV
mV
130
Noise output voltage
R4 = 100 kΩ;
IR open-circuit
psophometrically
weighted; (P53 curve)
RL = 300 Ω
single-ended
differential
Vno(rms)
Vno(rms)
−
−
50
−
−
µV
µV
RL = 600 Ω
100
June 1990
13
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
PARAMETER
CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Gain adjustment GAR
Gain variation of receiving
amplifier achievable by
varying R4 between
GAR and QR
∆Gv
−11
−
+8
dB
Mute input
Input voltage HIGH
Input voltage LOW
Input current
VIH
1.5
−
−
−
8
VCC
0.3
15
V
VIL
V
IMUTE
−
µA
Gain reduction
MIC+ or MIC− to LN
Voltage gain from DTMF
to QR+ or QR−
MUTE = HIGH
∆Gv
−
70
−
dB
dB
MUTE = HIGH;
R4 = 100 kΩ;
single-ended;
RL = 300 Ω
Gv
−21
−19
−17
Power-down input PD
Input voltage HIGH
Input voltage LOW
Input current
VIH
VIL
IPD
1.5
−
−
−
5
VCC
0.3
10
V
V
−
µA
Automatic gain control
input AGC
Controlling the gain
from IR to QR+/QR− and
the gain from MIC+/MIC−
to LN; R6 between AGC
and VEE
R6 = 110 kΩ
Gain control range
Iline = 70 mA
∆Gv
Iline
Iline
−5.5
−
−5.9
23
−6.3
−
dB
Highest line current for
maximum gain
mA
mA
Minimum line current for
minimum gain
−
61
−
Reduction of gain between
I
I
line = 15 mA and
line = 35 mA
∆Gv
−1.0
−1.5
−2.0
dB
June 1990
14
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
R
I
R1
line
line
I
+ 0.5 mA
I
SLPE
CC
I
p
LN
V
CC
TEA1067
R
exch
0.5 mA
DC
AC
peripheral
circuits
C1
V
exch
V
REG
STAB
SLPE
R9
EE
I
SLPE
C3
R5
MBH123
Fig.9 Supply arrangement.
MGR085
handbook, halfpage
2
a
I
P
(mA)
b
1
0
0
1
2
3
4
V
(V)
CC
Curve (a) is valid when the receiving amplifier is not driven or when MUTE = HIGH,
curve (b) is valid when MUTE = LOW and the receiving amplifier is driven;
Vo(rms) = 150 mV, RL = 150 Ω asymmetrical. The supply possibilities can be increased
simply by setting the voltage drop over the circuit VLN to a higher value by means of
resistor RVA connected between REG and SLPE.
(a) Ip = 1.8 mA
(b) Ip = 1.35 mA
Iline = 15 mA at VLN = 3.9 V
R1 = 620 Ω and R9 = 20 Ω.
Fig.10 Typical current Ip available from VCC for peripheral circuitry with VCC ≥ 2.2 V.
June 1990
15
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
V
CC
MIC+
MIC+
MIC−
MIC+
(1)
MIC−
MIC−
V
EE
MGR086
(c)
(a)
(b)
(a) Magnetic or dynamic microphone. The resistor marked (1) may be connected to decrease
the terminating impedance.
(b) Electret microphone.
(c) Piezoelectric microphone.
Fig.11 Alternative microphone arrangements.
(1)
(2)
QR+
QR+
QR−
QR+
QR−
QR+
QR−
QR−
V
EE
MGR087
(a)
(b)
(c)
(d)
(a) Dynamic earpiece with less than 450 Ω impedance.
(b) Dynamic earpiece with more than 450 Ω impedance.
(c) Magnetic earpiece with more than 450 Ω impedance. The resistor marked (1) may be connected
to prevent distortion (inductive load).
(d) Piezoelectric earpiece. The resistor marked (2) is required to increase the phase margin
(capacitive load).
Fig.12 Alternative receiver arrangements.
June 1990
16
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
MSA507
R6 = ∞
0
∆G
v
(dB)
−2
R9 = 20 Ω
−4
78.7 kΩ 110 kΩ 140 kΩ
−6
0
20
40
60
80
100
120
140
I
(mA)
line
Fig.13 Variation of gain with line current, with R6 as a parameter.
Table 1 Values of resistor R6 for optimum line loss
compensation, for various usual values of
exchange supply voltage (Vexch) and exchange
feeding bridge resistance (Rexch); R9 = 20 Ω.
Rexch (Ω)
400
600
800
R6 (kΩ)
X
1000
Vexch
(V)
36
48
60
100
140
X
78.7
110
X
X
82
93.1
120
102
June 1990
17
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
I
R1
line
620 Ω
V
LN
100 µF
CC
QR−
QR+
IR
V
o
R
L
600 Ω
MIC+
V
i
R4
100
kΩ
C4
MIC−
100 pF
TEA1067
DTMF
GAR
1 to
140 mA
C1
100 µF
C7 1 nF
GAS1
R7
68
kΩ
MUTE
C6
100 pF
PD
V
10 µF
GAS2
REG
AGC
STAB
R5
SLPE
EE
V
i
C3
4.7
µF
3.6
kΩ
R6
R9
20 Ω
MGR088
Voltage gain is defined as: Gv = 20 log Vo/Vi . For measuring the gain from
MIC+ and MIC− the MUTE input should be LOW or open, for measuring the
DTMF input MUTE should be HIGH. Inputs not under test should be open.
Fig.14 Test circuit for defining voltage gain of MIC+, MIC− and DTMF inputs.
I
R1
line
620 Ω
100 µF
600 Ω
V
LN
10 µF
CC
QR−
QR+
IR
Z
V
L
o
MIC+
MIC−
DTMF
MUTE
10 µF
V
i
R4
100
kΩ
C4
100 pF
TEA1067
GAR
1 to
140 mA
C1
100 µF
C7 1 nF
GAS1
R7
C6
100 pF
PD
V
GAS2
REG
AGC
STAB
R5
SLPE
EE
C3
R9
20 Ω
4.7
3.6
kΩ
R6
µF
MGR089
Voltage gain is defined as: Gv = 20 log Vo/Vi .
Fig.15 Test circuit for defining voltage gain of the receiving amplifier.
June 1990
18
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
APPLICATION INFORMATION
R1
620 Ω
C1
100
µF
R2
130 kΩ
R10
13 Ω
LN
V
CC
C5
IR
100 nF
BZX79-
C12
BAS11
(2×)
QR−
+
R11
DTMF
MUTE
PD
QR+
telephone
line
C4
100
pF
BZW14
(2×)
from dial
and
control circuits
R4
TEA1067
R3
3.92
kΩ
GAR
C7
1 nF
−
MIC+
MIC−
R
VA
V
SLPE GAS1 GAS2 REG AGC STAB
EE
R8
R7
C6
390 Ω
C3
4.7
µF
R5
3.6
kΩ
R6
Z
bal
100 pF
R9
20 Ω
MGR090
The bridge to the left, the zener diode and R10 limit the current into the circuit
and the voltage across the circuit during line transients. Pulse dialling or
register recall require a different protection arrangement.
The DC line voltage can be set to a higher value by the resistor RVA (REG to
SLPE).
Fig.16 Typical application of the TEA1067, shown here with a piezoelectric earpiece and DTMF dialling.
June 1990
19
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
LN
V
V
DD
CC
DTMF
MUTE
PD
DTMF
cradle
contact
M
TEA1067
PCD3310
FL
V
V
EE
SS
telephone
line
BST76
(a)
LN
V
V
CC
DD
DTMF
cradle
contact
PCD3320
FAMILY
MUTE
PD
M
TEA1067
DP
V
V
EE
SS
telephone
line
BST76
(b)
TEA1081
LN
V
V
DD
CC
DTMF
MUTE
PD
cradle
contact
M
TEA1067
PCD3343
DP/FL
V
V
EE
SS
telephone
line
2
BST76
I C-bus
DTMF
PCD3312
(c)
MGR091
(a) DTMF-Pulse set with CMOS dialling circuit PCD3310.
The dashed lines show an optional flash (register recall by timed loop break).
(b) Pulse dial set with one of the PCD3320 family of CMOS interrupted current-loop dialling circuits.
(c) Dual-standard (pulse and DTMF) feature phone with the PCD3343 CMOS controller and the
PCD3312 CMOS DTMF generator with I2C-bus. Supply is provided by the TEA1081 supply circuit.
Fig.17 Typical applications of the TEA1067 (simplified).
20
June 1990
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
PACKAGE OUTLINES
DIP18: plastic dual in-line package; 18 leads (300 mil)
SOT102-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
b
2
18
10
M
H
pin 1 index
E
1
9
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
w
UNIT
mm
b
b
b
c
D
E
e
e
L
M
M
H
1
2
1
E
max.
min.
max.
max.
1.40
1.14
0.53
0.38
1.40
1.14
0.32
0.23
21.8
21.4
6.48
6.20
3.9
3.4
8.25
7.80
9.5
8.3
4.7
0.51
3.7
2.54
0.10
7.62
0.30
0.254
0.01
0.85
0.055 0.021 0.055 0.013
0.044 0.015 0.044 0.009
0.86
0.84
0.26
0.24
0.15
0.13
0.32
0.31
0.37
0.33
inches
0.19
0.020
0.15
0.033
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
93-10-14
95-01-23
SOT102-1
June 1990
21
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
y
H
E
v
M
A
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
0.25
0.01
1.27
0.050
1.4
0.25 0.25
0.01
0.1
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.51
0.014 0.009 0.49
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT163-1
075E04
MS-013AC
June 1990
22
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
Several techniques exist for reflowing; for example,
SOLDERING
Introduction
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
SOLDERING BY DIPPING OR BY WAVE
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
June 1990
23
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
June 1990
24
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
NOTES
June 1990
25
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
NOTES
June 1990
26
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1067
NOTES
June 1990
27
Philips Semiconductors – a worldwide company
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20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
415102/00/02/pp28
Date of release: June 1990
Document order number: 9397 750 nnnnn
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