TEA1102TD [NXP]

IC 0.014 A BATTERY CHARGE CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO20, 7.50 MM, PLASTIC, SO-20, Switching Regulator or Controller;


型号：	TEA1102TD
厂家：	NXP
描述：	IC 0.014 A BATTERY CHARGE CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO20, 7.50 MM, PLASTIC, SO-20, Switching Regulator or Controller 信息通信管理开关光电二极管
文件：	总31页 (文件大小：348K)
中文：	中文翻译
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INTEGRATED CIRCUITS

DATA SHEET

TEA1102; TEA1102T;

TEA1102TS

Fast charge ICs for NiCd, NiMH,

SLA and LiIon

1999 Jan 27

Preliminary speciﬁcation

Supersedes data of 1997 Oct 09

File under Integrated Circuits, IC03

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

FEATURES

GENERAL DESCRIPTION

• Safe and fast charging of Nickel Cadmium (NiCd),

Nickel Metal Hydride (NiMH), Lithium Ion (LiIon), and

Sealed Lead Acid (SLA) batteries

The TEA1102x are fast charge ICs which are able fast

charge NiCd and NiMH, SLA and Lilon batteries.

The main fast charge termination for NiCd and NiMH

batteries are ∆T/∆t and peak voltage detection, both of

which are well proven techniques. The TEA1102x

automatically switches over from ∆T/∆t to peak voltage

detection if the thermistor fails or is not present. The ∆T/∆t

detection sensitivity is temperature dependent, thus

avoiding false charge termination. Three charge states

can be distinguished; fast, top-off and trickle.

• Three charge states for NiCd or NiMH; fast, top-off and

trickle or voltage regulation (optional)

• Two charge states for LiIon or SLA; current and voltage

limited

• Adjustable fast charge current [0.5CA to 5CA nominal

(CA = Capacity Amperes)]

• DC top-off and pulsating trickle charge current (NiCd

Charging Lilon and SLA batteries is completely different.

When the batteries reach their maximum voltage

(adjustable), the TEA1102x switches over from current

regulation to voltage regulation. After a defined time

period, which is dependent on battery capacity and charge

current, charge is terminated. Due to small self discharge

rates of Lilon and SLA batteries, trickle charge can be

omitted.

and NiMH)

• Temperature dependent ∆T/∆t battery full detection

• Automatic switch-over to accurate peak voltage

detection (−¹⁄₄%) if no NTC is applied

• Possibility to use both ∆T/∆t and peak voltage detection

as main fast charge termination

• Support of inhibit during all charging states

Several LEDs, as well as a buzzer, can be connected to

the TEA1102x for indicating battery insertion, charge

states, battery full condition and protection mode.

• Manual refresh with regulated adjustable discharge

current (NiCd and NiMH)

• Voltage regulation in the event of no battery

The TEA1102x are contained in a 20-pin package and are

manufactured in a BiCMOS process, essentially for

integrating the complex mix of requirements in a single

chip solution. Only a few external low cost components are

required in order to build a state of the art charger.

• Support of battery voltage based charge indication and

buzzer signalling at battery insertion, end of refresh and

at full detection

• Single, dual and separate LED outputs for indication of

charge status state

• Minimum and maximum temperature protection

• Time-out protection

• Short-circuit battery voltage protection

• Can be applied with few low-cost external components.

ORDERING INFORMATION

TYPE

PACKAGE

NUMBER

NAME

DESCRIPTION

VERSION

TEA1102

DIP20

SO20

plastic dual in-line package; 20 leads (300 mil)

SOT 146-1

SOT163-1

SOT339-1

TEA1102T

TEA1102TS

plastic small outline package; 20 leads; body width 7.5 mm

plastic shrink small outline package; 20 leads; body width 5.3 mm

SSOP20

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

QUICK REFERENCE DATA

SYMBOL

V_P

I_P

PARAMETER

supply voltage

supply current

CONDITIONS

MIN.

5.5

TYP.

MAX.

11.5

UNIT

−

outputs off

−

∆V_NTC/V_NTCtemperature rate dependent

(∆T/∆t) detection level

V_NTC= 2 V;

T_j= 0 to 50 °C

−0.25

∆V_bat/V_bat

voltage peak detection level with V_bat= 2 V;

−

−0.25

−

respect to top value

T_j= 0 to 50 °C

I_Vbat

input current battery monitor

V_bat= 0.3 to 1.9 V

−

V_bat(l)

voltage at pin 19 for detecting low

battery voltage

0.30

I_IB

battery charge current

fast charge

−

100

−

µA

top-off mode

I_IB(max)

maximum battery charge current voltage regulation full

NiCd and NiMH battery

−

I_IB(Lmax)

f_osc

maximum load current

oscillator frequency

regulating voltage

no battery

−

µA

kHz

−

200

−

V_reg

LiIon

SLA

1.37

1.63

−

NiCd and NiMH

(pin V_stbopen-circuit)

−

1.325 or

V_stb

−

open battery

−

1.9

−

1999 Jan 27

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OSC

bat

stb

ref

fast

charge off current current

1.25/R 3 µA 10 µA 40 µA

top standby load

OSC

PWM

SET

PROTECTION

NTC

ref

CHARGE CONTROL

AND

OUTPUT DRIVERS

4.25 V

R Q

present

PWM

3.3 V

battery

low

bat

0.3 V

reg

min

2.8 V

4.25 V

end

refresh

1 V

156

kΩ

4×

max

1 V

no-

battery

MTV

1.325 V/V

1.37 V 1.63 V 1.9 V

Llion SLA no-

battery

stb

NiCd

RFSH

kΩ

1.9 V

refresh

NIMH

100 mV

cut-off

0.75 V

kΩ

TEA1102

PSD

LED

CONTROL LOGIC

TIMER

AND

CHARGE

STATUS

INDICATION

NTC

bat

POD

PTD

DA/AD

CONVERTER

SUPPLY

BLOCK

FCT

MGC818

GND

Fig.1 Block diagram.

ahdnbok,uflapegwidt

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

PINNING

SYMBOL

V_stb

DESCRIPTION

standby regulation voltage input

(NiCd and NiMH)

charge current setting

ground

GND

PSD

LED

POD

PTD

NTC

MTV

RFSH

FCT

handbook, halfpage

program pin sample divider

LED output

stb

ref

bat

program pin oscillator divider

program pin time-out divider

temperature sensing input

maximum temperature voltage

refresh input/output

18 AO

17 LS

GND

PSD

LED

POD

PTD

NTC

TEA1102

PWM

OSC

fast charge termination and

battery chemistry identiﬁcation

V_P

positive supply voltage

switched reference voltage output

oscillator input

MTV

V_sl

RFSH

FCT

OSC

PWM

V_S

MBH067

pulse width modulator output

stabilized reference voltage

loop stability pin

V_bat

R_ref

analog output

single-cell battery voltage input

reference resistor pin

Fig.2 Pin configuration.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

voltage peak detection, fast charging is also protected by

temperature cut-off and time-out.

INTRODUCTION

All battery types are initially fast charged with an

adjustable high current. Fast charge termination depends

upon the battery type. With NiCd and NiMH batteries the

main fast charge termination will be the ∆T/∆t (temperature

detection) and/or peak voltage detection and with SLA and

LiIon batteries when the battery voltage reaches

2.45 or 4.1 V respectively.

To avoid false fast charge termination by peak voltage

detection or ∆T/∆t, full detection is disabled during a short

hold-off period at the start of a fast charge session. After

fast charge termination, the battery is extra charged by a

top-off period. During this period of approximately one

hour, the charge current is lowered thus allowing the

battery to be charged to nearly 100% before the system

switches over to standby.

The fast charge period is followed by a top-off period for

NiCd and NiMH batteries and by a fill-up period for SLA

and LiIon batteries. During the top-off period the NiCd and

NiMH batteries are charged to maximum capacity by

reduced adjustable charge current.

After the battery has been charged to nearly 100% by the

top-off period, discharge of the battery (caused by a load

or by the self-discharge) can be avoided by voltage

regulation or by trickle charge.

During the fill-up period the SLA and LiIon batteries are

charged to maximum capacity by a constant voltage and a

gradually decreasing current. The fill-up and top-off period

ends after time-out or one hour respectively.

If batteries are charged in combination with a load, the

TEA1102x can be programmed to apply voltage regulation

during the standby mode. In this way, discharge of the

battery caused by self-discharge or by an eventual load is

avoided. The regulating voltage is adjustable to the

voltage characteristic of the battery. For battery safety the

charge current is limited and the temperature is monitored

during voltage regulation. If a trickle charge is applied, the

self-discharge of the battery will be compensated by a

pulsating charge current.

After the fill-up or top-off period, the TEA1102x switches

over to the standby mode. For NiCd and NiMH batteries

either the voltage regulation or trickle charge mode can be

selected. The voltage regulation mode is selected when

the battery includes a fixed load. Trickle charge prevents a

discharge of the battery over a long period of time.

For SLA and LiIon batteries the charge current is disabled

during standby. The fast charge mode is entered again

when the battery voltage reaches 1.5 V (SLA) or 3 V

(LiIon).

To avoid the so called ‘memory effect’ in NiCd batteries, a

refresh can be manually activated.The discharge current is

regulated by the IC in combination with an external power

transistor. After discharging the battery to 1 V per cell, the

system automatically switches over to fast charge.

Charging principles

CHARGING NiCd/NiMH BATTERIES

CHARGING LiION/SLA BATTERIES

Fast charging of the battery begins when the power supply

voltage is applied and at battery insertion.

Charging these types of batteries differs considerably from

charging NiCd and NiMH batteries. The batteries will be

charged with a charge current of 0.15 CA if their cell

voltage is below the minimum voltage of 0.9 V for Lilon or

0.45 V for SLA. With batteries in good condition the battery

voltage will rise above 0.9 V in a short period of time.

When the batteries are short-circuited the voltage will not

rise above 0.9 V within one hour and the system will

change over to cut-off, which means that the output drivers

AO and PWM are fixed to zero and that battery charge can

only be started again after a power-on reset. If the battery

voltage of a good condition battery is above the minimum

level of 0.9 V the battery will be charged with the

During fast charge of NiCd and NiMH batteries, the battery

temperature and voltage are monitored. Outside the

initialized temperature and voltage window, the system

switches over to the top-off charge current.

The TEA1102x supports detection of fully charged NiCd

and NiMH batteries by either of the following criteria:

• ∆T/∆t

• Voltage peak detection.

If the system is programmed with ∆T/∆t and V_peakor, ∆T/∆t

or V_peakas the main fast charge termination, it

programmed fast charge current.

automatically switches to voltage peak detection if the

battery pack is not provided with a temperature sensing

input (NTC). In this way both packages, with and without

temperature sensor, can be used randomly independent of

the applied full detection method. Besides ∆T/∆t and/or

If Lilon or SLA batteries are used, ‘full’ is detected when

the battery voltage reaches 4.1 and 2.45 V respectively.

At this point the TEA1102x switches from current

regulation to voltage regulation (fill-up mode).

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

After the ‘fill-up’ period the charge current is not regulated,

which means that the output drivers AO and PWM are

fixed to zero. When the battery voltage becomes less than

3 V for Lilon and 1.5 V for SLA, the IC enters the fast

charge mode again.

• The standby charge method (NiCd and NiMH), trickle

charge or voltage regulation, is defined by the input pin

V_stb. By biasing this voltage with a set voltage, the output

voltage will be regulated to the V_stbset voltage. If this pin

is connected to V_S, or no NTC is connected the system

applies trickle charge.

If pin RFSH is connected to ground by depressing the

switch, the TEA1102x discharges the battery via an

external transistor connected to pin RFSH. The discharge

current is regulated with respect to the external (charge)

sense resistor (R_sense). End-of-discharge is reached when

the battery is discharged to 1 V per cell. Refreshing the

battery can only be activated during charging of NiCd and

NiMH batteries. When charging LiIon and SLA batteries,

discharge before charge is disabled.

FUNCTIONAL DESCRIPTION

Control logic

The main function of the control logic is to support the

communication between several blocks. It also controls

the charge method, initialization and battery full detection.

The block diagram of the TEA1102x is illustrated in Fig.1.

Conditioning charge method and initializations

The inhibit mode has the main priority. This mode is

activated when the V_stbinput pin is connected to ground.

Inhibit can be activated at any charge/discharge state,

whereby the output control signals will be zero, all LEDs

will be disabled and the charger timings will be set on hold.

Table 1 gives an operational summary.

At system switch-on, or at battery insertion, the control

logic sets the initialization mode in the timer block. After

the initialization time the timer program pins can be used

to indicate the charging state using several LEDs.

The charge method is defined at the same time by the

following methods:

• If the FCT pin is 0 or 1.25 V, indicating that SLA or LiIon

batteries have to be charged, the battery will be charged

by limit current and limit voltage regulation. Without

identification (FCT pin floating), the system will charge

the battery according to the charge characteristic of

NiCd and NiMH batteries.

Table 1 Functionality of program pins

FUNCTION

FCT

NTC

RFSH

V_stb

Inhibit

X⁽¹⁾

low

X⁽¹⁾

LiIon and SLA detection

Refresh (NiCd and NiMH)

∆T/∆t detection

low

not low⁽²⁾

ﬂoating

high

low

not low

high

note 3

note 4

X⁽¹⁾

not low

∆T/∆t and voltage peak detection

Voltage peak detection

Trickle charge at standby

not low

note 4

note 3

not low

ﬂoating⁽⁵⁾

Voltage regulation at standby

Notes

1. Where X = don’t care.

2. Not low means floating or high.

3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC.

4. The NTC voltage is outside the window for NTC detection.

5. V_stbhas to be floating or set to a battery regulating voltage in accordance with the specification.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

charged with approximately 0.15 Q. In this way the battery

is fully charged before the system switches over to

standby.

Supply block

The supply block delivers the following outputs:

• A power-on reset pulse to reset all digital circuitry at

battery insertion or supply switch-on. After a general

reset the system will start fast charging the battery.

When pin 1 (V_stb) is connected to V_S, or no NTC is

connected the system compensates the (self) discharge of

the battery by trickle charge. The trickle charge current will

be pulsating, defined by the following equation:

• A 4.25 V stabilized voltage source (V_S) is externally

available. This source can be used to set the thermistor

biasing, to initialize the programs, to supply the external

circuitry for battery voltage based charge indication and

to supply other external circuitry.

–6

_trickle× R_sense= R ×

× 10

(5)

------

During the non current periods at trickle charge the charge

current is regulated to zero, so that the current for a load

connected in series across the battery with the sense

resistor will be supplied by the power supply and not by the

battery.

• A 4.25 V bias voltage (V_sl) is available for use for more

indication LEDs. This output pin will be zero during the

initialization period at start-up, thus avoiding any

interference of the extra LEDs when initializing.

If at pin 1 (V_stb) a reference voltage is set in accordance

with the specification, and no NTC is connected the charge

mode will switch over from current to voltage regulation

after top-off. The reference regulating voltage can be

adjusted to the battery characteristic by external resistors

Charge control

The charge current is sensed via a low-ohmic resistor

(R_sense), see Fig.4. A positive voltage is created across

resistor R_bby means of a current source I_refwhich is set by

connected to pin V_stb

R_refin the event of fast charge and by an internal bias

current source in the event of top-off and trickle charge

(I_IB), see Fig.1. The positive node of R_bwill be regulated to

zero via error amplifier A1, which means that the voltage

across R_band R_sensewill be the same. The fast charge

current is defined by the following equation:

This reference voltage has to be selected in such a way

that it equals the rest voltage of the battery. By using

voltage regulation, the battery will not be discharged at a

load occurrence. If the V_stbinput pin is floating, the

TEA1102x will apply voltage regulation at 1.325 V during

the standby mode (NiCd and NiMH). The current during

voltage regulation is limited to 0.5 CA. If the battery charge

current is maximized to 0.5 CA for more than 2 hours

charging will be stopped. Moreover, if the temperature

exceeds T_max, charging will be stopped completely.

As voltage regulation is referred to one cell, the voltage on

the V_batpin must be the battery voltage divided by the

number of cells (NiCd and NiMH).

_fast× R_sense= R_b× I_ref

(1)

The output of amplifier A1 is available at the loop stability

pin LS, consequently the time constant of the current loop

can be set. When V_peak(NiCD and NiMH) is applied, the

current sensing for the battery voltage will be reduced,

implying that the charge current will be regulated to zero

during:

t_sense= 2¹⁰× POD × t_osc

(2)

For LiIon or SLA batteries, the battery is extra charged

after full detection by constant voltage regulation during a

certain fill-up period. LiIon and SLA batteries have to

identify themselves by an extra pin on the battery pack to

ground, which is connected via a resistor to pin 11 (FCT).

As the battery voltage sense (V_bat) has to be normalized to

a one cell voltage of NiCd and NiMH packages, the V_bat

input pin will be regulated to 1.367 and 1.633 V during

fill-up for LiIon and SLA respectively. In this way this

system can accept a mixture of one LiIon, two SLA and

three NiCd or NiMH packages.

Actually battery voltage sensing takes place in the last

oscillator cycle of this period.

To avoid modulation on the output voltage, the top-off

charge current is DC regulated, defined by the following

equation:

_{top – off}× R_sense= R_b× 3 × 10^–6

(3)

where:

t_{top – off}= 2²⁷× TOD × t_osc

(4)

After fill-up, charging of LiIon or SLA batteries is disabled.

The battery charge is then fixed to zero, ensuring

maximum life-cycle of the battery.

The top-off charge current will be approximately 0.15 CA,

which maximizes the charge in the battery under safe and

slow charging conditions. The top-off charge period will be

approximately one hour, so the battery will be extra

Because of a fixed zero charge current, the battery will be

discharged if a load is applied.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

To ensure an eventual load during all charging states, the

fast charge mode will be entered again if the battery

voltage drops below 15 V for SLA or 3 V for Lilon.

The time-out timer is put on hold by low voltage,

temperature protection and during the inhibit mode.

The Programmable Oscillator Divider (POD) enables the

oscillator frequency to be increased without affecting

the sampling time and time-out. Raising the oscillator

frequency will reduce the size of the inductive components

that are used.

When charging, the standby mode (LiIon and SLA) can

only be entered after a certain period of time depending on

time-out. The same applies for charging NiCd or NiMH

batteries. To support full test of the TEA1102x at

application, the standby mode is also entered when

At fast charging, after battery insertion, after refresh or

supply interruption, the full detector will be disabled for a

period of time to allow a proper start with flat or inverse

polarized batteries. This hold-off period is disabled at fast

charging by raising pin V_stbto above ±5 V (once).

V_bat< V_bat(l)at fill-up or top-off respectively.

Timer

The timing of the circuit is controlled by the oscillator

frequency.

So for test options it is possible to slip the hold-off period.

The hold-off time is defined by the following equation:

t_{hold – off}= 2^–5× t_{time – out}

(7)

The timer block defines the maximum charging time by

‘time-out’. At a fixed oscillator frequency, the time-out time

can be adapted by the Programmable Time-out Divider

(PTD) using the following equation.

Table 2 gives an overview of the settings of timing and

discharge/charge currents.

t_{time – out}= 2²⁶× POD × PTD × t_osc

(6)

Table 2 Timing and current formulae

SYMBOL

DESCRIPTION

FORMULAE

see Fig.3

t_osc

timing

NTC voltage sampling frequency

2¹⁷× POD × PSD × t_osc

_sampling(∆T/∆t)

2¹⁶× POD × t_osc

2²⁷× POD × t_osc

2²⁶× POD × PTD × t_osc

2⁻⁵× t_time-out

T_sampling(V_peak

t_top-off

t_time-out

t_hold-off

t_LED

)

battery voltage sampling frequency

2¹⁴× POD × t_osc

2¹⁰× POD × t_osc

2²¹× POD × PTD × t_osc

inhibit or protection

t_sense

t_switch

I_fast

charge/discharge currents

R_b

V _ref

----------------- ---------

R_senseR_ref

I_top-off

R _b

× 3 × 10^–6

-----------------

R _sense

I_trickle

R_b

–6

× 10

----------------- ------

R_sense16

I_load-max

R_b

× 40 × 10^–6

-----------------

R_sense

I_RFSH

100 mV

--------------------

R_sense

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

PTD programming

handbook, full pagewidth

12.5

(R23 min)

125

(R23 max)

(GND) (n.c.) (+V

)

200

osc

(kHz)

prefered

oscillator

range

160

(POD = +V

)

(pF)

120

prefered

oscillator

range

100

(POD = n.c.)

150

220

prefered

oscillator

range

390

560

820

1500

(POD = GND)

120

150

180 10

110

130

(min)

R23 (kΩ)

time-out

MGD280

Fig.3 t_time-outas a function of R23 and PTD with C4 as parameter.

• Fast charge (LED on)

LED indication

• 100% or refresh (LED off)

With few external components, indication LEDs can be

connected to the program pins and the LED pin of the

TEA1102x. These program pins change their function from

an input to an output pin after a short initialization time at

system switch-on or battery insertion. Output pin V_sl

enables the external LEDs to be driven and avoids

interaction with the programming of the dividers during the

initialization period.

• Protection or inhibit (LED floating).

The refresh can be indicated by an extra LED connected

to pin 4 (PSD). A buzzer can also be driven from the

TEA1102x to indicate battery insertion end of refresh or full

battery.

AD/DA converter

The applied LEDs indicate:

• Protection

When battery full is determined by peak voltage detection,

the V_batvoltage is sampled at a rate given by the following

equation:

• Refresh

_sampling(V_peak) = 2¹⁶× POD × t_osc

(8)

• Fast charge

• 100%

The analog value of a V_batsample is then digitized and

• No-battery.

stored in a register. On the following sample, the digitized

value is converted back to the analog value of V_batand

compared with the ‘new’ V_batsample.

The LED output pin can also indicate the charging state by

one single LED. The indication LED can be connected

directly to the LED output. This single LED indicates:

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

At an increase of the battery voltage the 14-bit

analog-to-digital convertor (ADC) is refreshed with this

new value. Therefore, the digitized value always

represents the maximum battery voltage. A decreased

Output drivers

The charge current regulation signal is available at two

output pins, AO and PWM.

value.

_batvoltage is not stored, but is compared to the stored

ANALOG OUTPUT

The analog control voltage output at pin 18 (AO) can be

used to drive an opto-coupler in mains separated

applications when an external resistor is connected

between AO and the opto-coupler. The maximum current

through the opto-coupler diode is 2 mA. The voltage gain

of amplifier A2 is typical 11 dB (times 3.5). The DC voltage

transfer is given by the following equation:

Full is detected when the voltage decrease of V_batis ¹⁄₄%

of the stored peak battery value. To avoid interference due

to the resistance of the battery contacts during battery

voltage sensing, the charge current is regulated to zero

during t = 2¹⁰× POD × t_osc, via the regulation pins AO and

PWM. At the last period, the V_batvoltage is sensed and

stored in a sample-and-hold circuit. This approach

ensures very accurate detection of the battery full

condition (minus ¹⁄₄%).

_ao= 3.5 × (V_LS− 1.35).

The AO output can be used for:

When battery full is determined by ∆T/∆t, the voltage on

the NTC pin is used as the input voltage to the AD/DA

convertor. The sampling time at ∆T/∆t sensing is given by

the following equation:

• Linear (DC) applications

• Not mains isolated SMPS with a separate controller

• Mains isolated SMPS, controlled by an opto-coupler.

= 2¹⁷× POD × PSD × t_osc

(9)

∆T

∆t

t_sampling

-------

PULSE WIDTH MODULATOR (PWM)

The LS voltage is compared internally with the oscillator

voltage to deliver a pulse width modulated output at PWM

(pin 15) to drive an output switching device in a SMPS

converter application via a driver stage. The PWM output

is latched to prevent multi-pulsing. The maximum duty

factor is internally fixed to 79% (typ.). The PWM output can

be used for synchronization and duty factor control of a

primary SMPS via a pulse transformer.

After this initialized sample time the new temperature

voltage is compared to the preceding AD/DA voltage and

the AD/DA is refreshed with this new value. A certain

increase of the temperature is detected as full battery,

depending on the initialization settings. The decision of full

detection by ∆T/∆t or V_peakis digitally filtered thus avoiding

false battery full detection.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); note 1.

SYMBOL

Voltages

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V_P

positive supply voltage

−0.5

−

11.5

V_oLED

V_n

output voltage at pin 5

voltage at pins PWM, LS and NTC

voltage at pin 2

−0.5

+V_S

1.0

V_IB

Currents

I_VS

current at pin 16

−3

−1

−

+0.01

+0.3

µA

I_Vsl

current at pin 13

I_oLED

I_AO

output current at pin 5

output current at pin 18

output current at pin 15

current at pin 20

−10

−15

−1

−

+0.05

+14

+0.01

I_oPWM

I_Rref

I_P

positive supply current

supply standby current

T_j< 100 °C

I_P(stb)

V_P= 4 V

−

Dissipation

P_tot

total power dissipation

SOT146-1

T_amb= +85 °C

−

1.2

SOT163-1

0.6

SOT339-1

0.45

Temperatures

T_amb

T_j

operating ambient temperature

junction temperature

−20

−

+85

°C

+150

T_stg

storage temperature

−55

Note

1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the

voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not

violated; current ratings are valid provided that the power rating is not violated.

QUALITY SPECIFICATION

General quality specification for integrated circuits: SNW-FQ-611E.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

CHARACTERISTICS

V_P= 10 V; T_amb= 25 °C; R_ref= 62 kΩ; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies; pins V_P, V_S,R_refand V_sl

V_P

supply voltage

5.5

−

11.5

I_P

supply current

outputs off; V_P= 11.5 V

V_P= 4 V

−

I_stb

standby current

−

µA

V_clamp

V_start

V_LSP

V_S

clamping voltage (pin 12)

start voltage

I_clamp= 30 mA

11.5

6.1

5.1

4.14

4.05

1.21

−

12.8

6.7

6.4

5.3

4.25

1.25

±60

low supply protection level

source voltage (stabilized)

LED source voltage

reference voltage

5.5

I_S= 2 mA

4.36

4.45

1.29

±120

V_SL

V_ref

I_LED= 50 µA

I_ref= 20 µA; V_P= 10 V

TC_Vref

temperature coefﬁcient of the T_amb= 0 to 45 °C;

reference voltage _ref= 20 µA; V_ref= 1.25 V

power supply rejection ratio of f = 100 Hz; V_P= 8 V;

ppm/K

∆V_ref/∆V_P

∆V_ref

−46

−

µA

the reference voltage

∆V_P= 2 V (p-p)

load rejection of source

voltage

∆I_S= 20 mA; V_P= 10 V

I_Rref

current range of reference

resistor

100

Charge current regulation; pins IB and R_ref

I_IB/I_ref

fast charge ratio

V_IB= 0

_ref= 10 µA

0.93

−2

1.03

1.0

−

1.13

1.07

_ref= 100 µA

V_thIB

threshold voltage at pin IB

T_amb= 25 °C

µA

T_amb= 0 to 45 °C

top-off mode; V_IB= 0

−3

−

I_IB

charge current

2.6

3.2

10.5

3.8

I_IB(max)

maximum charge current

voltage regulation full

µA

NiCd/NiMH battery; V_IB= 0

I_IB(Lmax)

I_IB(LI)

maximum load current

input leakage current

open battery; V_IB= 0

currentless mode

µA

−

170

Refresh; pin RFSH

V_Rsensesense resistor voltage

I_refresh= V_IB/ R_sense; refresh

mode; I_refresh= 18 mA

100

−

125

250

1.04

2.6

V_RFSH

refresh voltage for

NiCd/NiMH

programming start of refresh

V_bat

voltage at pin V_batfor

NiCd/NiMH

0.96

1.4

1.0

detecting end of refresh

I_source(max)

maximum source current

V_IB= 75 mV; V_P= 10 V;

V_RFSH= 2.7 V; T_amb= 25 °C

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

SYMBOL

PARAMETER

CONDITIONS

I_RFSH= 1 mA

MIN.

2.7

TYP.

MAX.

UNIT

V_RFSH(max)

V_RFSH(off)

maximum refresh voltage

−

voltage at pin RFSH when

refresh is off

700

770

840

Temperature related inputs; pins NTC and MTV

V_NTCh

input voltage at pin NTC for

detecting high temperature

pin MTV open-circuit

MTV setting

0.9

1.1

0.95MTV MTV

1.05MTV V

V_NTCh(hy)

V_NTCl

hysteresis of V_NTCh

−

input voltage at pin NTC,

detecting low temperature

2.7

2.8

2.9

V_NTCl(hy)

V_NTC(co)

hysteresis of V_NTCl

−

input voltage at pin NTC for

detecting temperature cut-off

0.7MTV 0.75MTV 0.8MTV

V_NTC(bat)

maximum input voltage at pin

NTC for detecting battery with

NTC

3.22

3.3

3.38

I_NTC

input current at pin NTC

voltage level at pin MTV

V_NTC= 2 V

−5

−

µA

V_MTV

default (open-circuit)

0.95

0.5

−

1.05

2.5

−

∆V_NTC/V_NTC∆T/∆t detection level

V_NTC= 2 V; T_j= 0 to 50 °C

−0.25

Voltage regulation

V_reg

regulation voltage

LiIon; I_ref= 20 µA

SLA; I_ref= 20 µA

1.34

1.59

1.30

1.37

1.63

1.325

1.40

1.67

1.35

NiCd and NiMH;

pin V_stbopen-circuit

NiCd and NiMH; V_stb= 1.5 V 0.99V_stbV_stb

1.01V_stb

1.94

open battery

1.86

1.9

TC_Vreg

g_m

temperature coefﬁcient of

regulation voltage

V_reg= 1.37 V;

±60

±120

ppm/K

T_amb= 0 to 45 °C

transconductance of

ampliﬁer A3

V_bat= 1.9 V;

no battery mode

−

2.0

−

mA/V

Program pin V_stb

V_stb

open voltage at pin V_stb

1.30

1.325

1.35

0.8

V_stb(im)

voltage at pin V_stbfor

−

programming inhibit mode

V_stb(st)

voltage at pin V_stbfor

programming voltage

regulation at standby

NiCd and NiMH

1.0

2.6

−

2.2

V_S

V_stb(tc)

voltage at pin V_stbfor

programming trickle charge at

standby

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Program pins; PSD, POD and PTD

V_4,6,7

voltage level at pins PSD,

POD or PTD

default (open-circuit)

1.9

2.1

2.3

V_4,6,7(1)

voltage level at pins PSD,

POD or PTD for programming

the divider = 1

−

1.2

2.5

V_S

V_4,6,7(2)

voltage level at pins PSD,

POD or PTD for programming

the divider = 2

1.6

3.1

V_4,6,7(4)

voltage level at pins PSD,

POD or PTD for programming

the divider = 4

I_PODsink

I_PTDsink

I_PSDsink

I_LI

protection current for

multi-LED indication

V_POD= 1.5 V

V_PTD= 1.5 V

−

µA

full battery current for

multi-LED indication

refresh current for multi-LED V_PSD= 1.5 V

indication

input leakage current

V_POD= 4.25 V;

V_PTD= 4.25 V; V_PSD= 4.25 V

Program pin FCT

V_FCT(SLA)

V_FCT(Lilon)

V_FCT(or)

voltage level for detecting an

SLA battery

−

0.7

1.6

3.3

voltage level for detecting a

LiIon battery

0.9

2.0

voltage level for programming NiCd and NiMH

∆T/∆t or V_peakas fast charge

termination

V_FCT(and)

voltage level for programming NiCd and NiMH

∆T/∆t and V_peakas fast

3.7

−

V_S

charge termination

V_FCT

Program pin LED

V_LED(m)output voltage level for

voltage level at pin FCT

default (open-circuit)

2.3

2.6

2.9

2.5

−

programming multi-LED

indication

V_LED(s)

output voltage level for

programming single LED

indication

3.1

−

V_P

I_sink(max)

I_LI(LED)

maximum sink current

input leakage current

V_LED= 1.5 V

V_LED= 10 V

V_LED= 0.6 V

−

µA

−

V_o(max)

maximum output voltage

−

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Output drivers; AO, LS and PWM

I_AO(source)

I_AO(sink)

g_m1

analog output source current V_AO= 3 V (p-p); V_LS= 2.8 V −9

−

analog output sink current

V_AO= 3 V (p-p); V_LS= 1.2 V 50

µA

transconductance of

ampliﬁer A1

V_IB= 50 mV

−

250

µA/V

G_v1,2

voltage gain of ampliﬁers

A1 and A2

V_AO= 3 V (p-p)

−

G_v2

voltage gain of ampliﬁer A2

V_AO= 2 V (p-p)

V_LS= 2.25 V

−

I_LS(source)

maximum source current

(pin LS)

−25

−21

−16

µA

I_LS(sink)

maximum sink current

(pin LS)

V_LS= 2.25 V

µA

I_OH(PWM)

I_OL(PWM)

δ_PWM

HIGH level output current

LOW level output current

maximum duty factor

V_PWM= 3 V

−19

−

−15

−11

−

V_PWM= 0.7 V

Battery monitor; V_bat

I_Vbat

V_bat

battery monitor input current V_bat= 1.85 V

−

voltage range of V_peak

detection

0.3

−

∆V_bat/V_bat

∆V_bat

V_peakdetection level with

respect to top level

V_bat= 1.85 V; T_j= 0 to 50 °C

−

−0.25

−

voltage resolution for V_peak

0.6

Protections; V_bat

V_bat(l)maximum voltage at pin V_bat

0.25

0.30

0.35

for detecting low battery

voltage

Oscillator; pin OSC

V_osc(H)HIGH level oscillator

−

2.5

1.5

−

switching voltage

V_osc(L)

LOW level oscillator switching

voltage

f_osc(min)

f_osc(max)

minimum oscillator frequency R_ref= 125 kΩ; C_osc= 400 pF 20.9

maximum oscillator frequency R_ref= 12.5 kΩ; C_osc= 400 pF 158

25.1

190

kHz

174

1999 Jan 27

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(DC)

TR1

BD231

(SMPS only)

7 to 18 V

400 µH

BYV28

R24

80 kΩ

(0.1%)

1.5 kΩ only for

R15

270 Ω

(only for

more than

3 cells

kΩ

TR3

BC337

(DC)>13V

C3 100 nF

R4 3.9 kΩ

BYD74D

R16

4.25 V

LED

single

multi

LED

8.2 kΩ

R19

75 kΩ

750

Ω

fast

33 kΩ

NTC

MTV

max

POD

10 kΩ

adjust.

R18

24 kΩ

R22

R17 130 kΩ

(25 C)

no-

battery

33 kΩ

47 kΩ

protection

GND

33 kΩ

R20

R21

16 kΩ

15 kΩ

12 kΩ

PTD

FCT

33 kΩ

∆T/∆t

and

∆T/∆t

Lilon

SLA

100%

GND

BAW62

33 kΩ

100 µF

peak

LOAD

470

µF

TEA1102

stb

reg

adjust.

R10

PSD

NiCd

33 kΩ

NiMH

3/6/9 cell

refresh

GND

47 kΩ

bat

R11

PWM

SMPS mode

linear mode

SLA

TR2

2/4/6 cell

BC337

NiCd 3

NiMH 3

SLA 2

NiCd 6

NiCd 9

ref

NiMH 6

SLA 4

NiMH 9

SLA 6

Lilon

TR4

TIP110

RFSH

1/2/3 cell

Lilon 1

Lilon 2

Lilon 3

62 Ω

OSC

GND

(3)

R26

R23

62 kΩ

(1A fast

charge)

8 kΩ

(0.1%)

R28

10 kΩ

(0.1%)

1.5 nF

R25

40 kΩ

(0.1%)

refresh

220

R27

R12

0 Ω

8 kΩ

(0.1%)

6 kΩ

R13⁽²⁾

5.1 kΩ

(0.15A top off)

)

sense

(1A refresh)

R14 0.1 Ω⁽¹⁾

MBH068

100 mV

(1) R14 =

or R14 =

if not applicable.

--------------------

I_refresh

-----------------------------

I_{fast – charge}

ahdnbok,uflapegwidt

R14 × I_{top – off}

(2) R13 =

(3) R23 =

------------------------------------

3 µA

1.25 × R13

-----------------------------------------------

R14 × I_{fast – charge}

Fig.4 Basic test board diagram.

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

(D2 for more than 3 NiCD cells)

handbook, full pagewidth

TR1 BD231

V (DC)

+ battery

7 to 11.5 V

supply

= 270 Ω for more than 3 NiCD cells)

R10

200 kΩ

(1%)

1.5

kΩ

1 kΩ

100 nF

LED

4.25 V

10 kΩ

NTC

MTV

FCT

POD

GND

PTD

PSD

SLA = 0 Ω

Lilion = 4.3 kΩ

GND

NiCd/NiMH = ∞

100 µF

470 µF

TEA1102

stb

NiCd

NiMH

3 cells

GND

bat

PWM

SLA

2 cells

TR2

BC337

ref

Lilon

1 cell

RFSH

180 Ω

OSC

GND

C2 1.5 nF

220 pF

100 kΩ

(0.1%)

62 kΩ

(0.5 A

fast

osc

75 kHz)

(R )

5.1 kΩ

(75 mA top off)

charge)

R5 0.22 Ω

− battery

MBH069

sense

Fig.5 Linear application diagram.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

handbook, full pagewidth

TR4

refresh

+BAT

TR1

R24

LIN

D10

R30

TR3

R25

R28

stb

R26 R27

R10

R23

R15

R4R3

number

R11

refresh

bat

1L 2L 3L

cells

LIN

fast-charge

R13

TR2

PWM

protection

MTV

R19

R12 FCT

NTC

100%

SLA

Li-Ion

dT/dt or V

dT/dt and V

R22

R21

R20

R18

R16

NTC

no-battery

R17

GND

−V

R14

−BAT

sense

TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN

MBH073

Fig.6 Component side of printed-circuit board (test board).

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

86.35

handbook, full pagewidth

81.28

MBH072

Dimensions in mm.

Fig.7 Track side of printed-circuit board (test board).

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

handbook, full pagewidth

+battery

TR1

TR2

R10

PSD

POD

PTD

:1 :4

−battery

−V

MBH071

Fig.8 Component side of printed-circuit board (linear application) scale 1 : 1.

handbook, full pagewidth

MBH070

Fig.9 Track side of printed-circuit board (linear application) scale 1 : 1.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

PACKAGE OUTLINES

DIP20: plastic dual in-line package; 20 leads (300 mil)

SOT146-1

w M

(e )

pin 1 index

10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

(1)

UNIT

max.

min.

max.

1.73

1.30

0.53

0.38

0.36

0.23

26.92

26.54

6.40

6.22

3.60

3.05

8.25

7.80

10.0

8.3

4.2

0.51

3.2

2.54

0.10

7.62

0.30

0.254

0.01

2.0

0.068

0.051

0.021

0.015

0.014

0.009

1.060

1.045

0.25

0.24

0.14

0.12

0.32

0.31

0.39

0.33

inches

0.17

0.020

0.13

0.078

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

92-11-17

95-05-24

SOT146-1

SC603

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

SO20: plastic small outline package; 20 leads; body width 7.5 mm

SOT163-1

(A )

pin 1 index

detail X

10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

max.

(1)

UNIT

0.30

0.10

2.45

2.25

0.49

0.36

0.32

0.23

13.0

12.6

7.6

7.4

10.65

10.00

1.1

0.4

1.1

1.0

0.9

0.4

2.65

0.25

0.01

1.27

0.050

1.4

0.25 0.25

0.01

0.1

8^o

0^o

0.012 0.096

0.004 0.089

0.019 0.013 0.51

0.014 0.009 0.49

0.30

0.29

0.419

0.394

0.043 0.043

0.016 0.039

0.035

0.016

inches 0.10

0.055

0.01 0.004

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

95-01-24

97-05-22

SOT163-1

075E04

MS-013AC

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm

SOT339-1

(A )

pin 1 index

detail X

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max.

8^o

0^o

0.21

0.05

1.80

1.65

0.38

0.25

0.20

0.09

7.4

7.0

5.4

5.2

7.9

7.6

1.03

0.63

0.9

0.7

0.9

0.5

2.0

0.25

0.65

1.25

0.2

0.13

0.1

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

93-09-08

95-02-04

SOT339-1

MO-150AE

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 230 °C.

SOLDERING

Introduction

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our “Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

WAVE SOLDERING

Conventional single wave soldering is not recommended

for surface mount devices (SMDs) or printed-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mount components are mixed on

one printed-circuit board. However, wave soldering is not

always suitable for surface mount ICs, or for printed-circuit

boards with high population densities. In these situations

reflow soldering is often used.

To overcome these problems the double-wave soldering

method was specifically developed.

If wave soldering is used the following conditions must be

observed for optimal results:

• Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE

• For packages with leads on two sides and a pitch (e):

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joints for more than 5 seconds. The total contact

time of successive solder waves must not exceed

5 seconds.

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (T_stg(max)). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

The footprint must incorporate solder thieves at the

downstream end.

• For packages with leads on four sides, the footprint must

be placed at a 45° angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

MANUAL SOLDERING

Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than

2 mm above it. If the temperature of the soldering iron bit

is less than 300 °C it may remain in contact for up to

10 seconds. If the bit temperature is between

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

300 and 400 °C, contact may be up to 5 seconds.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Surface mount packages

REFLOW SOLDERING

MANUAL SOLDERING

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

Several methods exist for reflowing; for example,

infrared/convection heating in a conveyor type oven.

Throughput times (preheating, soldering and cooling) vary

between 100 and 200 seconds depending on heating

method.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

Suitability of IC packages for wave, reﬂow and dipping soldering methods

SOLDERING METHOD

MOUNTING

PACKAGE

WAVE

REFLOW⁽¹⁾DIPPING

Through-hole mount DBS, DIP, HDIP, SDIP, SIL

suitable⁽²⁾

−

suitable

Surface mount

HLQFP, HSQFP, HSOP, SMS

PLCC⁽⁴⁾, SO

not suitable⁽³⁾

suitable

−

suitable

LQFP, QFP, TQFP

SQFP

not recommended⁽⁴⁾⁽⁵⁾

not suitable

not recommended⁽⁶⁾

SSOP, TSSOP, VSO

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1999 Jan 27

Philips Semiconductors

Preliminary speciﬁcation

Fast charge ICs for NiCd, NiMH, SLA and

LiIon

TEA1102; TEA1102T;

TEA1102TS

NOTES

1999 Jan 27

Philips Semiconductors – a worldwide company

Argentina: see South America

Middle East: see Italy

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

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220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belgium: see The Netherlands

Brazil: see South America

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,

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Portugal: see Spain

Romania: see Italy

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Slovenia: see Italy

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Spain: Balmes 22, 08007 BARCELONA,

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Tel. +41 1 488 2741 Fax. +41 1 488 3263

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

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Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

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Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

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Tel. +1 800 234 7381, Fax. +1 800 943 0087

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Uruguay: see South America

Vietnam: see Singapore

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA61

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

465002/750/04/pp28

Date of release: 1999 Jan 27

Document order number: 9397 750 04793

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Description

Catalog by System

Automotive

Consumer Multimedia

Systems

The TEA1102x are fast charge ICs which are able fast charge NiCd and NiMH, SLA and Lilon batteries.

Communications

PC/PC-peripherals

The main fast charge termination for NiCd and NiMH batteries are DT/Dt and peak voltage detection, both of which are well proven

techniques. The TEA1102x automatically switches over from DT/Dt to peak voltage detection if the thermistor fails or is not present. The

DT/Dt detection sensitivity is temperature dependent, thus avoiding false charge termination. Three charge states can be distinguished;

fast, top-off and trickle.

Cross reference

Models

Packages

Application notes

Selection guides

TEA1102TD [NXP]

相关型号：

TEA1102TD-T

TEA1102TS

TEA1102TS/N3

TEA1102TSDB

TEA1103

TEA1103T

TEA1103T/N2

TEA1103TD

TEA1103TD-T

TEA1103TD-T

TEA1103TS

TEA1103TS/N2