TEA1112T [NXP]
Low voltage versatile telephone transmission circuits with dialler interface; 与拨号接口的低电压多功能电话传输电路
| 型号： | TEA1112T |
| 厂家： | 
NXP |
| 描述： | Low voltage versatile telephone transmission circuits with dialler interface |
| 文件： | 总20页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1112; TEA1112A
Low voltage versatile telephone
transmission circuits with dialler
interface
1997 Mar 26
Product specification
Supersedes data of 1996 Feb 16
File under Integrated Circuits, IC03
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
FEATURES
APPLICATION
• Low DC line voltage; operates down to 1.6 V (excluding
• Line powered telephone sets, cordless telephones, fax
polarity guard)
machines and answering machines.
• Voltage regulator with adjustable DC voltage
• Provides a supply for external circuits
GENERAL DESCRIPTION
• Symmetrical high impedance inputs (64 kΩ) for
dynamic, magnetic or piezo-electric microphones
The TEA1112; TEA1112A are bipolar integrated circuits
that perform all speech and line interface functions
required in fully electronic telephone sets. They perform
electronic switching between speech and dialling. The ICs
operate at a line voltage down to 1.6 V DC (with reduced
performance) to facilitate the use of telephone sets
connected in parallel.
• Asymmetrical high impedance input (32 kΩ) for electret
microphones
• DTMF input with confidence tone
• Mute input for pulse or DTMF dialling (MUTE for
TEA1112 and MUTE for TEA1112A)
A current (proportional to the line current and internally
limited to a typical value of 19.5 mA) is available to drive
an LED which indicates the on-hook/off-hook status.
• Receiving amplifier for dynamic, magnetic or
piezo-electric earpieces
• AGC line loss compensation for microphone and
earpiece amplifiers
The microphone amplifier can be disabled during speech
condition by means of a microphone mute function.
• LED on-hook/off-hook status indication
All statements and values refer to all versions unless
otherwise specified.
• Microphone mute function (MMUTE for TEA1112 and
MMUTE for TEA1112A).
QUICK REFERENCE DATA
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;
unless otherwise specified.
SYMBOL
Iline
PARAMETER
CONDITIONS
normal operation
MIN.
11
TYP. MAX. UNIT
line current operating range
−
140
11
−
mA
mA
mA
mA
V
with reduced performance
Iline = 18 mA
1
−
ILED(max)
maximum supply current available
−
0.5
19.5
3.65
1.15
2.9
Iline > 76 mA
−
−
VLN
ICC
DC line voltage
3.35
−
3.95
1.4
−
internal current consumption
supply voltage for peripherals
typical voltage gain range
microphone amplifier
receiving amplifier
VCC = 2.9 V
Ip = 0 mA
mA
V
VCC
Gvtrx
−
V
MIC = 2 mV (RMS)
IR = 6 mV (RMS)
38.8
19.2
−
−
51.8
31.2
−
dB
dB
dB
V
−
∆Gvtrx
gain control range for microphone and
receiving amplifiers with respect to
Iline = 15 mA
Iline = 85 mA
5.8
∆Gvtxm
microphone amplifier gain reduction
−
80
−
dB
1997 Mar 26
2
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
DIP16
DIP16
SO16
SO16
DESCRIPTION
VERSION
SOT38-4
SOT38-4
TEA1112
plastic dual in-line package; 16 leads (300 mil)
TEA1112A
TEA1112T
TEA1112AT
plastic dual in-line package; 16 leads (300 mil)
SOT109-1
SOT109-1
plastic small outline package; 16 leads; body width 3.9 mm
plastic small outline package; 16 leads; body width 3.9 mm
BLOCK DIAGRAM
MUTE
or
MUTE
GAR
15
QR
14
8
9
IR
V−
V−
V−
V−
I
I
I
I
V
CC
16
1
LN
7
ATT.
DTMF
CURRENT
REFERENCE
5
4
GAS
12
11
MIC
REG
MIC
MMUTE
or
MMUTE
6
MICRO
MUTE
AGC
CIRCUIT
LOW VOLTAGE
CIRCUIT
TEA1112
TEA1112A
LED
DRIVER
13
10
3
2
MBE793
SLPE
AGC
I
LED
V
EE
Fig.1 Block diagram.
3
1997 Mar 26
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
PINNING
PIN
SYMBOL
DESCRIPTION
TEA1112
TEA1112A
LN
1
2
1
2
positive line terminal
SLPE
ILED
slope (DC resistance) adjustment
available output current to drive a LED
line voltage regulator decoupling
sending gain adjustment
3
3
REG
GAS
MMUTE
MMUTE
DTMF
MUTE
MUTE
IR
4
4
5
5
6
−
microphone mute input
−
6
microphone mute input (active LOW)
dual-tone multi-frequency input
7
7
8
−
mute input to select speech or dialling mode
mute input to select speech or dialling mode (active LOW)
receiving amplifier input
−
8
9
9
AGC
MIC−
MIC+
VEE
10
11
12
13
14
15
16
10
11
12
13
14
15
16
automatic gain control/line loss compensation
inverting microphone amplifier input
non-inverting microphone amplifier input
negative line terminal
QR
receiving amplifier output
GAR
VCC
receive gain adjustment
supply voltage for speech circuit and peripherals
handbook, halfpage
handbook, halfpage
LN
1
2
3
4
5
6
7
8
16
V
LN
1
2
3
4
5
6
7
8
16
V
CC
CC
SLPE
15 GAR
SLPE
15 GAR
14
13
I
QR
V
14
13
I
QR
V
LED
LED
REG
GAS
REG
GAS
EE
EE
TEA1112
TEA1112A
12 MIC+
11 MIC−
10 AGC
12 MIC+
11 MIC−
10 AGC
MMUTE
DTMF
MMUTE
DTMF
MUTE
MUTE
9
IR
9
IR
MBE791
MBE790
Fig.2 Pin configuration (TEA1112).
Fig.3 Pin configuration (TEA1112A).
1997 Mar 26
4
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
Where:
Iline = line current
FUNCTIONAL DESCRIPTION
All data given in this chapter are typical values, except
when otherwise specified.
ICC = current consumption of the IC
Ip = supply current for peripheral circuits
I* = current consumed between LN and VEE
ILED = supply current for the LED component
Supply (pins LN, SLPE, VCC and REG)
The supply for the TEA1112; TEA1112A and their
peripherals is obtained from the telephone line.
Ish = the excess line current shunted to SLPE (and VEE
)
The ICs generate a stabilized reference voltage (Vref)
between pins LN and SLPE. This reference voltage is
equal to 3.35 V, is temperature compensated and can be
adjusted by means of an external resistor (RVA). It can be
increased by connecting the RVA resistor between
pins REG and SLPE (see Fig.5), or decreased by
connecting the RVA resistor between pins REG and LN.
The voltage at pin REG is used by the internal regulator to
generate the stabilized reference voltage and is decoupled
by a capacitor (CREG) which is connected to VEE. This
capacitor, converted into an equivalent inductance (see
Section “Set impedance”), realizes the set impedance
conversion from its DC value (RSLPE) to its AC value (RCC
in the audio-frequency range). The voltage at pin SLPE is
proportional to the line current. Figure 4 illustrates the
supply configuration.
via LN.
The preferred value for RSLPE is 20 Ω. Changing RSLPE will
affect more than the DC characteristics; it also influences
the microphone and DTMF gains, the LED supply current
characteristic, the gain control characteristics, the
sidetone level and the maximum output swing on the line.
The internal circuitry of the TEA1112; TEA1112A is
supplied from pin VCC. This voltage supply is derived from
the line voltage by means of a resistor (RCC) and must be
decoupled by a capacitor CVCC. It may also be used to
supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown
by the formula (see also Figs.6 and 7). RCCint is the
internal impedance of the voltage supply point, and Irec is
the current consumed by the output stage of the earpiece
amplifier.
The ICs regulate the line voltage at pin LN, and can be
calculated as follows:
VCC = VCC0 – RCCint × (Ip – Irec
VCC0 = VLN – RCC × ICC
)
VLN = Vref + RSLPE × ISLPE
ISLPE = Iline – ICC – Ip – I = ILED + Ish
R
R
line
CC
619 Ω
I
line
LN
V
I
LED
CC
I
P
R
p
from pre amp
I
TEA1112
TEA1112A
C
VCC
100 µF
R
15.5 kΩ
R
CC
exch
GASint
I
I*
69 kΩ
sh
peripheral
circuits
I
LED
LED
DRIVER
V
d
V
exch
R
d
V
45.5 kΩ
REG
C
EE
SLPE
R
SLPE
REG
I
SLPE
20 Ω
4.7 µF
MBE789
Fig.4 Supply configuration.
5
1997 Mar 26
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
For line currents higher than a threshold, ILEDstart, the ILED
current increases proportionally to the line current (with a
ratio of one third). The ILED current is internally limited to
19.5 mA (see Fig.9). If no LED device is used in the
application, the ILED pin should be shorted to pin SLPE.
MGD176
6.0
handbook, halfpage
V
ref
(V)
I
line – 17
For 17 mA < Iline < 77 mA: ILED
=
----------------------
3
5.0
This LED driver is referenced to SLPE. Consequently, all
the ILED supply current will flow through the RSLPE resistor.
The AGC characteristics are not disturbed (see Fig.4).
4.0
3.0
Microphone amplifier (pins MIC+, MIC− and GAS)
(1)
(2)
The TEA1112; TEA1112A have symmetrical microphone
inputs. The input impedance between pins MIC+ and
MIC− is 64 kΩ (2 × 32 kΩ). The voltage gain from
4
5
6
7
10
10
10
10
pins MIC+/MIC− to pin LN is set at 51.8 dB (typ). The gain
can be decreased by connecting an external resistor RGAS
between pins GAS and REG. The adjustment range is
13 dB. A capacitor CGAS connected between pins GAS
and REG can be used to provide a first-order low-pass
filter. The cut-off frequency corresponds to the time
constant CGAS × (RGASint // RGAS). RGASint is the internal
resistor which sets the gain with a typical value of 69 kΩ.
R
(Ω)
VA
(1) Influence of RVA on Vref
.
(2) Vref without influence of RVA
.
Fig.5 Reference voltage adjustment by RVA
.
Automatic gain control is provided on this amplifier for line
loss compensation.
The DC line current flowing into the set is determined by
the exchange supply voltage (Vexch), the feeding bridge
resistance (Rexch), the DC resistance of the telephone line
(Rline) and the reference voltage (Vref). With line currents
below 7.5 mA, the internal reference voltage (generating
Vref) is automatically adjusted to a lower value. This means
that more sets can operate in parallel with DC line voltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 7.5 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.
Microphone mute (pin MMUTE; TEA1112)
The microphone amplifier can be disabled by activating
the microphone mute function. When MMUTE is LOW, the
normal speech mode is entered, depending on the level on
MUTE (see Table 1). When MMUTE is HIGH, the
microphone amplifier inputs are disabled while the DTMF
input is enabled (no confidence tone is provided).
The voltage gain between LN and MIC+/MIC− is
attenuated; the gain reduction is 80 dB (typ).
Set impedance
Microphone mute (pin MMUTE; TEA1112A)
In the audio frequency range, the dynamic impedance is
mainly determined by the RCC resistor. The equivalent
impedance of the circuits is illustrated in Fig.8.
The microphone amplifier can be disabled by activating
the microphone mute function. When MMUTE is LOW, the
microphone amplifier inputs are disabled while the DTMF
input is enabled (no confidence tone is provided).
The voltage gain between LN and MIC+/MIC− is
attenuated; the gain reduction is 80 dB (typ). When
MMUTE is HIGH, the normal speech mode is entered,
depending on the level on MUTE (see Table 1).
LED supply (pin ILED
)
The TEA1112; TEA1112A give an on-hook/off-hook status
indication. This is achieved by a current made available to
drive an LED connected between pins ILED and LN. In the
low voltage area, which corresponds to low line current
conditions, no current is available for this LED.
1997 Mar 26
6
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
Receiving amplifier (pins IR, GAR and QR)
Mute function (pin MUTE; TEA1112)
The receiving amplifier has one input (IR) and one output
(QR). The input impedance between pin IR and pin VEE is
20 kΩ. The voltage gain from pin IR to pin QR is set at
31.2 dB (typ). The gain can be decreased by connecting
an external resistor RGAR between pins GAR and QR; the
adjustment range is 12 dB. Two external capacitors CGAR
(connected between GAR and QR) and CGARS (connected
between GAR and VEE) ensure stability. The CGAR
capacitor provides a first-order low-pass filter. The cut-off
frequency corresponds to the time constant
The mute function performs the switching action between
the speech mode and the dialling mode. When MUTE is
LOW or open-circuit, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled, depending on the MMUTE level (see Table 1).
When MUTE is HIGH, the DTMF input is enabled and the
microphone and receiving amplifiers inputs are disabled.
Mute function (pin MUTE; TEA1112A)
The mute function performs the switching between the
speech mode and the dialling mode. When MUTE is LOW
or open-circuit, the DTMF input is enabled and the
microphone and receiving amplifiers inputs are disabled.
When MUTE is HIGH, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled, depending on the MMUTE level (see Table 1).
CGAR × (RGARint // RGAR). RGARint is the internal resistor
which sets the gain with a typical value of 100 kΩ.
The relationship CGARS = 10 × CGAR must be fulfilled to
ensure stability.
The output voltage of the receiving amplifier is specified for
continuous wave drive. The maximum output swing
depends on the DC line voltage, the RCC resistor, the ICC
current consumption of the circuit, the Ip current
consumption of the peripheral circuits and the load
impedance.
DTMF amplifier (pin DTMF)
When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).
Automatic gain control is provided on this amplifier for line
loss compensation.
The TEA1112; TEA1112A have an asymmetrical DTMF
input. The input impedance between DTMF and VEE is
20 kΩ. The voltage gain from pin DTMF to pin LN is
25.5 dB. When an external resistor is connected between
pins REG and GAS to decrease the microphone gain, the
DTMF gain varies in the same way (the DTMF gain is
26.3 dB lower than the microphone gain with no AGC
control).
Automatic gain control (pin AGC)
The TEA1112; TEA1112A perform automatic line loss
compensation. The automatic gain control varies the gain
of the microphone amplifier and the gain of the receiving
amplifier in accordance with the DC line current.
The control range is 5.8 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
The ICs can be used with different configurations of
feeding bridge (supply voltage and bridge resistance) by
connecting an external resistor RAGC between pins AGC
and VEE. This resistor enables the Istart and Istop line
currents to be increased (the ratio between Istart and Istop is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.
The automatic gain control has no effect on the DTMF
amplifier.
1997 Mar 26
7
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
MBE783
2.5
handbook, halfpage
I
P
(mA)
2
handbook, halfpage
R
V
CC
CCint
1.5
I
1
PERIPHERAL
CIRCUIT
V
rec
I
P
CCO
(2)
(1)
0.5
MBE792
V
EE
0
0
1
2
3
4
V
(V)
CC
(1) With RVA resistor.
(2) Without RVA resistor.
Fig.6 Typical current Ip available from VCC for
peripheral circuits at Iline = 15 mA.
Fig.7 VCC supply voltage for peripherals.
MBE784
100
handbook, halfpage
I
(mA)
LN
I
80
handbook, halfpage
SLPE
R
CC
R
L
P
EQ
619 Ω
60
40
V
REG
V
CC
ref
I
SLPE
sh
R
C
C
SLPE
20 Ω
REG
VCC
4.7 µF
100 µF
I
LED
V
EE
MBE788
20
0
0
20
40
60
80
I
100
(mA)
line
LEQ = CREG × RSLPE × RP.
RP = internal resistance.
RP = 15.5 kΩ.
Fig.8 Equivalent impedance between LN and VEE
.
Fig.9 Available current to drive an LED.
1997 Mar 26
8
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
MUTE and MMUTE levels for different modes
Table 1 Required MUTE and MMUTE levels to enable the different possible modes
IC
TEA1112
TEA1112A
Mode
MUTE
MMUTE
MUTE
MMUTE
Speech
L
H
L
L
X
H
H
L
H
X
L
DTMF dialling
Microphone mute
H
be for an average line length which gives satisfactory
sidetone suppression with short and long lines.
The suppression also depends on the accuracy of the
match between Zbal and the impedance of the average
line.
SIDETONE SUPPRESSION
The TEA1112; TEA1112A anti-sidetone network
comprising RCC // Zline, Rast1, Rast2, Rast3, RSLPE and Zbal
(see Fig.10) suppresses the transmitted signal in the
earpiece. Maximum compensation is obtained when the
following conditions are fulfilled:
The anti-sidetone network for the TEA1112; TEA1112A
(as shown in Fig.14) attenuates the receiving signal from
the line by 32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole audio
frequency range. A Wheatstone bridge configuration (see
Fig.11) may also be used.
R
SLPE × Rast1 = RCC × (Rast2 + Rast3)
(Rast2 × (Rast3 + RSLPE) )
k =
-----------------------------------------------------------------------
(Rast1 × RSLPE
)
More information on the balancing of an anti-sidetone
bridge can be obtained in our publication “Applications
Handbook for Wired Telecom Systems, IC03b”, order
number 9397 750 00811.
Z bal = k × Zline
The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Zbal
.
In practice, Zline varies considerably with the line type and
the line length. Therefore, the value chosen for Zbal should
LN
R
R
CC
ast1
Z
line
IR
I
V
m
EE
Z
ir
R
ast2
R
SLPE
R
ast3
Z
bal
SLPE
MBE787
Fig.10 Equivalent circuit of TEA1112; TEA1112A family anti-sidetone bridge.
1997 Mar 26
9
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
LN
R
Z
CC
bal
Z
line
IR
I
V
m
EE
Z
ir
R
SLPE
R
R
A
ast1
SLPE
MBE786
Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VLN
positive continuous line voltage
V
EE − 0.4 12
V
V
repetitive line voltage during switch-on or
line interruption
V
EE − 0.4 13.2
Vn(max)
maximum voltage on pins ILED, SLPE
maximum voltage on all other pins
line current
V
V
−
EE − 0.4 VLN + 0.4
EE − 0.4 VCC + 0.4
140
V
V
Iline
Ptot
RSLPE = 20 Ω; see
Figs 12 and 13
mA
total power dissipation
TEA1112; TEA1112A
Tamb = 75 °C;
see Figs 12 and 13
−
−
625
416
mW
mW
°C
TEA1112T; TEA1112AT
IC storage temperature
operating ambient temperature
Tstg
−40
−25
+125
+75
Tamb
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air (TEA1112; TEA1112A)
80
K/W
K/W
thermal resistance from junction to ambient in free air mounted on epoxy board
130
40.1 × 19.1 × 1.5 mm (TEA1112T; TEA1112AT)
1997 Mar 26
10
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
MBE782
150
handbook, halfpage
I
line
(mA)
(1)
(4)
(3)
(2)
110
LINE
(1)
Tamb (°C)
Ptot (W)
1.000
0.875
0.750
0.625
45
55
65
75
(2)
(3)
70
(4)
30
2
4
6
8
10
− V
12
(V)
V
LN
SLPE
Fig.12 Safe operating area (TEA1112; TEA1112A).
MLC202
150
handbook, halfpage
I
LN
(mA)
130
110
90
LINE
Tamb (°C)
Ptot (W)
0.666
0.583
0.500
0.416
(1)
45
55
65
75
(1)
(2)
(2)
(3)
(3)
70
(4)
(4)
50
30
2
4
6
8
10
12
V
(V)
V
LN
SLPE
Fig.13 Safe operating area (TEA1112T; TEA1112AT).
11
1997 Mar 26
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
CHARACTERISTICS
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply (pins VLN, VCC, SLPE and REG)
Vref
VLN
stabilized voltage between LN and
SLPE
3.1
3.35
3.6
V
DC line voltage
Iline = 1 mA
−
1.6
2.45
3.65
−
−
V
V
V
V
V
I
I
line = 4 mA
line = 15 mA
−
−
3.35
−
3.95
6.9
−
Iline = 140 mA
VLN(exR)
DC line voltage with an external
resistor RVA
RVA(SLPE−REG) = 27 kΩ
−
4.4
∆VLN(T)
DC line voltage variation with
Tamb = −25 to +75 °C
−
±30
−
mV
temperature referred to 25 °C
ICC
internal current consumption
supply voltage for peripherals
VCC = 2.9 V
Ip = 0 mA
−
−
−
1.15
2.9
1.4
−
mA
V
VCC
RCCint
equivalent supply voltage
impedance
Ip = 0.5 mA
550
620
Ω
LED supply (pin ILED
)
Iline(h)
highest line current for ILED < 0.5 mA
lowest line current for maximum ILED
maximum supply current available
−
−
−
18
−
−
−
mA
mA
mA
Iline(l)
76
ILED(max)
19.5
Microphone amplifier (pins MIC+, MIC− and GAS)
Zi
input impedance
differential between pins
MIC+ and MIC−
−
−
64
32
−
−
kΩ
kΩ
single-ended between pins
MIC+/MIC− and VEE
Gvtx
voltage gain from MIC+/MIC− to LN VMIC = 2 mV (RMS)
50.6
51.8
53
dB
dB
∆Gvtx(f)
gain variation with frequency
referred to 1 kHz
f = 300 to 3400 Hz
−
±0.2
−
∆Gvtx(T)
gain variation with temperature
Tamb = −25 to +75 °C
−
±0.3
−
dB
referred to 25 °C
CMRR
common mode rejection ratio
gain voltage reduction range
−
−
80
−
dB
dB
∆Gvtxr
external resistor
connected between
GAS and REG
−
13
VLN(max)
maximum sending signal
(RMS value)
Iline = 15 mA; THD = 2%
Iline = 4 mA; THD = 10%
1.4
−
1.7
−
−
−
V
0.8
V
Vnotx
noise output voltage at pin LN; pins psophometrically weighted
−
−70.5
dBmp
MIC+/ MIC− shorted through 200 Ω (P53 curve)
1997 Mar 26
12
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Microphone mute (pins MMUTE; TEA1112 and MMUTE; TEA1112A)
∆Gvtxm
gain reduction in microphone MUTE
mode
−
80
−
dB
V
VIL
LOW level input voltage
HIGH level input voltage
input current
V
EE − 0.4
−
VEE + 0.3
VIH
VEE + 1.5 −
VCC + 0.4 V
IMMUTE
input level = HIGH
−
1.25
3
µA
Receiving amplifier (pins IR, QR and GAR)
Zi
input impedance
−
20
−
kΩ
dB
dB
Gvrx
voltage gain from IR to QR
VIR = 6 mV (RMS)
f = 300 to 3400 Hz
29.7
−
31.2
±0.2
32.7
−
∆Gvrx(f)
gain variation with frequency
referred to 1 kHz
∆Gvrx(T)
∆Gvrxr
gain variation with temperature
referred to 25 °C
Tamb = −25 to +75 °C
−
−
±0.3
−
dB
dB
gain voltage reduction range
external resistor
connected between
GAR and QR
−
12
Vo(rms)
maximum receiving signal (RMS
value)
Ip = 0 mA sine wave drive;
RL = 150 Ω; THD = 2%
−
−
−
0.25
0.35
−86
−
−
−
V
Ip = 0 mA sine wave drive;
RL = 450 Ω; THD = 2%
V
Vnorx(rms) noise output voltage at pin QR (RMS IR open-circuit;
dBVp
value)
RL = 150 Ω;
psophometrically weighted
(P53 curve)
Automatic gain control (pin AGC)
∆Gvtrx
gain control range for microphone
and receiving amplifiers with
respect to Iline = 15 mA
Iline = 85 mA
−
−
5.8
26
−
−
dB
Istart
highest line current for maximum gain
mA
1997 Mar 26
13
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
61
MAX.
UNIT
Istop
lowest line current for minimum gain
−
−
−
−
mA
DTMF amplifier (pin DTMF)
Zi
input impedance
20
kΩ
Gvdtmf
voltage gain from DTMF to LN in
DTMF dialling or microphone MUTE
mode
VDTMF = 20 mV (RMS)
24.3
25.5
26.7
dB
∆Gvdtmf(f) gain variation with frequency
f = 300 to 3400 Hz
−
−
−
±0.2
±0.4
−18
−
−
−
dB
dB
dB
referred to 1 kHz
∆Gvdtmf(T) gain variation with temperature
referred to 25 °C
Tamb = −25 to +75 °C
Gvct
voltage gain from DTMF to QR
(confidence tone)
VDTMF = 20 mV (RMS);
RL = 150 Ω
Mute function (pins MUTE; TEA1112 and MUTE; TEA1112A)
VIL
LOW level input voltage
HIGH level input voltage
input current
V
EE − 0.4
−
VEE + 0.3
V
VIH
VEE + 1.5 −
VCC + 0.4 V
IMUTE
∆Gtrxm
input level = HIGH
−
−
1.25
80
3
µA
dB
gain reduction for microphone and
receiving amplifiers in DTMF dialling
mode
−
1997 Mar 26
14
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
APPLICATION INFORMATION
GM1D7
a
1997 Mar 26
15
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
PACKAGE OUTLINES
DIP16: plastic dual in-line package; 16 leads (300 mil)
SOT38-4
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
b
2
16
9
M
H
pin 1 index
E
1
8
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
A
A
A
2
(1)
(1)
Z
1
w
UNIT
mm
b
b
b
c
D
E
e
e
L
M
M
H
1
2
1
E
max.
min.
max.
max.
1.73
1.30
0.53
0.38
1.25
0.85
0.36
0.23
19.50
18.55
6.48
6.20
3.60
3.05
8.25
7.80
10.0
8.3
4.2
0.51
3.2
2.54
0.10
7.62
0.30
0.254
0.01
0.76
0.068 0.021 0.049 0.014
0.051 0.015 0.033 0.009
0.77
0.73
0.26
0.24
0.14
0.12
0.32
0.31
0.39
0.33
inches
0.17
0.020
0.13
0.030
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-01-14
SOT38-4
1997 Mar 26
16
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-23
97-05-22
SOT109-1
076E07S
MS-012AC
1997 Mar 26
17
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1997 Mar 26
18
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuits with dialler interface
TEA1112; TEA1112A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Mar 26
19
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
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Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580/xxx
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874
Indonesia: see Singapore
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
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Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417027/1200/03/pp20
Date of release: 1997 Mar 26
Document order number: 9397 750 01888
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