TEA1114AT/C2 [NXP]
IC TELEPHONE SPEECH CKT, PDSO16, PLASTIC, SOT-109, SO-16, Telephone Circuit;
| 型号： | TEA1114AT/C2 |
| 厂家： | 
NXP |
| 描述： | IC TELEPHONE SPEECH CKT, PDSO16, PLASTIC, SOT-109, SO-16, Telephone Circuit 电信 光电二极管 电信集成电路 |
| 文件： | 总30页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1114A
Low voltage telephone
transmission circuit with dialler
interface and regulated strong
supply
Product specification
2000 Mar 21
Supersedes data of 1999 Sep 14
File under Integrated Circuits, IC03
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
FEATURES
APPLICATIONS
• Low DC line voltage; operates down to 1.45 V
(excluding voltage drop over external polarity guard)
• Line powered telephone sets with LCD module
• Cordless telephones
• Line voltage regulator with adjustable DC voltage
• Fax machines
• 3.3 V regulated strong supply point for peripheral
circuits compatible with:
• Answering machines.
– Speech mode
– Ringer mode
GENERAL DESCRIPTION
The TEA1114A is a bipolar integrated circuit that performs
all speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between speech and dialling. The IC operates at a line
voltage down to 1.45 V DC (with reduced performance) to
facilitate the use of telephone sets connected in parallel.
– Trickle mode.
• Transmit stage with:
– Microphone amplifier with symmetrical high
impedance inputs
– DTMF amplifier with confidence tone on receive
output.
When the line current is high enough, a fixed amount of
current is derived from the LN pin in order to create a
strong supply point at pin VDD. The voltage at pin VDD is
regulated to 3.3 V to supply peripherals such as dialler,
LCD module and microcontroller.
• Receive stage with:
– Receive amplifier with asymmetrical output
– Earpiece amplifier with adjustable gain (and gain
boost facility) for all types of earpieces.
• MUTE input for pulse or DTMF dialling
• AGC line loss compensation for microphone and receive
amplifiers.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TEA1114A
DIP16
SO16
−
plastic dual in-line package; 16 leads (300 mil)
plastic small outline package; 16 leads; body width 3.9 mm
bare die; on foil
SOT38-4
SOT109-1
−
TEA1114AT
TEA1114AUH
2000 Mar 21
2
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
QUICK REFERENCE DATA
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; measured according to test
circuits given in Figs 15, 16 and 17; Tamb = 25 °C for TEA1114A(T); Tj = 25 °C for TEA1114AUH; unless otherwise
specified.
SYMBOL
Iline
PARAMETER
CONDITIONS
normal operation
MIN. TYP. MAX. UNIT
line current operating range
11
1
−
140
11
mA
mA
V
with reduced performance
−
VLN
ICC
DC line voltage
4.05
−
4.35
1.25
3.6
4.65
1.5
−
internal current consumption
VCC = 3.6 V
IP = 0 mA
mA
V
VCC
supply voltage for internal circuitry
(unregulated)
−
VDD
regulated supply voltage for peripherals
speech mode
I
DD = −3 mA
3.0
3.0
−
3.3
3.3
−
3.6
3.6
−3
V
ringer mode
IDD = 75 mA
V
IDD
available supply current for peripherals
mA
dB
Gv(TX)
typical voltage gain for microphone
amplifier
VMIC = 4 mV (RMS)
43.2
44.2
45.2
Gv(RX)
typical voltage gain for receiving amplifier VIR = 4 mV (RMS)
32.4
−14
−
33.4
−
34.4
+12
−
dB
dB
dB
∆Gv(QR)
∆Gv(trx)
gain setting range for earpiece amplifier
RE1 = 100 kΩ
gain control range for microphone and
receive amplifiers with respect to
Iline = 15 mA
Iline = 85 mA
6.0
∆Gv(trx)(m)
gain reduction for microphone and receive MUTE = LOW
amplifiers
−
80
−
dB
2000 Mar 21
3
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
BLOCK DIAGRAM
IR
4
8
V
I
12 RX
MUTE
11 GAR
9
QR
V
I
DTMF
6
CURRENT AND
VOLTAGE
ATTENUATOR
0.5V
CC
REFERENCE
V
I
V
16
7
CC
V
V
DD
DD
REGULATOR
TEA1114A
MIC+ 13
MIC− 14
1
LN
V
I
V
10
EE
AGC
CIRCUIT
3
REG
LOW VOLTAGE
CIRCUIT
AGC
5
2
MGK804
SLPE
Fig.1 Block diagram.
4
2000 Mar 21
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
PINNING
PIN
PAD
SYMBOL
LN
DESCRIPTION
TEA1114A(T) TEA1114AUH
1
2
1, 19
2
positive line terminal
SLPE
REG
IR
slope (DC resistance) adjustment
line voltage regulator decoupling
receiving amplifier input
3
3
4
4
AGC
DTMF
VDD
5
5
automatic gain control/ line loss compensation
dual-tone multi-frequency input
regulated supply for peripherals
6
6
7
7
MUTE
QR
8
8
mute input to select speech or dialling mode (active LOW)
earpiece amplifier output
not connected
9
9
n.c.
−
10
11
12
13
14
15
16
−
VEE
10
−
negative line terminal
n.c.
not connected
GAR
RX
11
12
13
14
15
16
−
earpiece amplifier gain adjustment
receive amplifier output
MIC+
MIC−
n.c.
non-inverting microphone amplifier input
inverting microphone amplifier input
not connected
VCC
17
18
supply voltage for internal circuit
not connected
n.c.
handbook, halfpage
V
LN
SLPE
REG
IR
1
2
3
4
5
6
7
8
16
15
14
13
CC
n.c.
MIC−
MIC+
TEA1114A
AGC
DTMF
12 RX
11 GAR
V
V
10
9
DD
EE
QR
MUTE
MGK803
Fig.2 Pin configuration.
2000 Mar 21
5
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
FUNCTIONAL DESCRIPTION
ISLPE = Iline – ICC – IP – ISUP
All data given in this chapter are typical values, except
when otherwise specified.
where:
Iline = line current
Supply (pins LN, SLPE, REG, VCC and VDD
)
ICC = current consumption of the IC
IP = supply current for external circuits
The supply for the TEA1114A and its peripherals is
obtained from the telephone line (see Fig.3).
ISUP = current consumed between LN and VEE by the
VDD regulator.
THE LINE INTERFACE (PINS LN, SLPE AND REG)
The preferred value for RSLPE is 20 Ω. Changing RSLPE will
affect more than the DC characteristics; it also influences
the microphone and DTMF gains, the gain control
characteristics, the sidetone level and the maximum
output swing on the line.
The IC generates a stabilized reference voltage (Vref)
between pins LN and SLPE. Vref is temperature
compensated and can be adjusted by means of an
external resistor (RVA). Vref equals 4.15 V and can be
increased by connecting RVA between pins REG and
SLPE or decreased by connecting RVA between pins
REG and LN. The voltage at pin REG is used by the
internal regulator to generate Vref and is decoupled by
CREG, which is connected to VEE. This capacitor,
converted into an equivalent inductance
The DC line current flowing into the set is determined by
the exchange supply voltage (VEXCH), the feeding bridge
resistance (REXCH), the DC resistance of the telephone
line (Rline) and the reference voltage (Vref). With line
currents below 9 mA, the internal reference voltage
(generating Vref) is automatically adjusted to a lower value.
This means that more sets can operate in parallel with
DC line voltages (excluding the polarity guard) down to an
absolute minimum voltage of 1.45 V. At currents below
9 mA, the circuit has limited sending and receiving levels.
This is called the low voltage area.
(see Section “Set impedance”) realizes the set impedance
conversion from its DC value (RSLPE) to its AC value
(RCC in the audio-frequency range). The voltage at
pin SLPE is proportional to the line current.
The voltage at pin LN is:
VLN = Vref + RSLPE × ISLPE
R
R
line
I
CC
line
I
I
LN
CC
V
LN
CC
C
TEA1114A
VCC
I
P
100 µF
from preamplifier
I
SUP
internal
circuitry
R
EXCH
V
V
DD
DD
REGULATOR
external
circuits
I
DD
V
EXCH
peripherals
V
REG
SLPE
R
EE
C
VDD
220 µF
C
REG
SLPE
I
SLPE
4.7 µF
20 Ω
MGK805
Fig.3 Supply configuration.
6
2000 Mar 21
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
THE INTERNAL SUPPLY POINT (PIN VCC
)
The internal circuitry of the TEA1114A is supplied from
pin VCC. This voltage supply is derived from the line
voltage by means of a resistor (RCC) and must be
decoupled by a capacitor CVCC. It may also be used to
supply some external circuits. The VCC voltage depends
on the current consumed by the IC and the peripheral
MGL827
3
handbook, halfpage
I
P
(mA)
1.9 mA
1.6 mA
circuits as: VCC0 = VLN – RCC × ICC
2
VCC = VCC0 – RCC × (IP + Irec
)
(see also Figs 4 and 5). Irec is the current consumed by the
output stage of the earpiece amplifier.
1
0
(2)
(1)
R
V
handbook, halfpage
CC
CC
I
0
1
2
3
4
V
(V)
CC
EXTERNAL
CIRCUITS
I
rec
P
V
CC0
VCC ≥ 2.5 V; VLN = 4.35 V at Iline = 15 mA; RCC = 619 Ω;
RSLPE = 20 Ω.
Curve (1) is valid when the receiving amplifier is driven:
VQR(rms) = 150 mV; RL1 = 150 Ω.
V
MGK806
EE
Curve (2) is valid when the receiving amplifier is not driven.
Fig.4 VCC used as supply voltage for external
circuits.
Fig.5 Typical current IP available from VCC for
peripheral circuitry.
THE REGULATED SUPPLY POINT (PIN VDD
)
In ringer mode, the stabilizer operates as a shunt stabilizer
to keep VDD at 3.3 V. In this mode, the input voltage
The VDD regulator delivers a stabilized voltage for the
peripherals in transmission mode (nominal VLN) as well as
in ringer mode (VLN = 0 V). The regulator (see Fig.6)
consists of a sense input circuit, a current switch and a VDD
output stabilizer. The regulator operates as a current
source at the LN input in transmission mode; it takes a
constant current of 4.3 mA (at nominal conditions) from
pin LN. The current switch reduces the distortion on the
line at large signal swings. Output VDD follows the
DC voltage at pin LN (with typically 0.35 V difference) up
to VDD = 3.3 V. The input current of the regulator is
constant while the output (source) current is determined by
the consumption of the peripherals. The difference
between input and output current is shunted by the internal
VDD stabilizer.
V
LN = 0 V while the input current into pin VDD is delivered
by the ringing signal. VDD has to be decoupled by a
capacitor CVDD
.
2000 Mar 21
7
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
R
R
I
line
CC
line
I
I
LN
CC
C
LN
V
VCC
CC
100 µF
V
DD
R
I
I
EXCH
SUP
DD
SENSE
SWITCH
peripherals
V
EXCH
V
regulator
DD
C
VDD
TEA1114A
V
220 µF
EE
MGK807
Fig.6 VDD regulator configuration.
Set impedance
Transmit stage (pins MIC+, MIC− and DTMF)
MICROPHONE AMPLIFIER (PINS MIC+ AND MIC−)
In the audio frequency range, the dynamic impedance is
mainly determined by the RCC resistor. The equivalent
impedance of the circuit is illustrated in Fig.7.
The TEA1114A has symmetrical microphone inputs.
The input impedance between pins MIC+ and MIC− is
64 kΩ (2 × 32 kΩ). The voltage gain from pins MIC+/MIC−
to pin LN is set at 44.2 dB (typically).
Automatic gain control is provided on this amplifier for line
loss compensation.
LN
handbook, halfpage
R
CC
R
L
P
DTMF AMPLIFIER (PIN DTMF)
EQ
619 Ω
When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones are also sent to the receive
output RX at a low level (confidence tone).
V
REG
V
CC
ref
SLPE
R
C
C
SLPE
20 Ω
REG
VCC
4.7 µF
The TEA1114A has an asymmetrical DTMF input.
The input impedance between DTMF and VEE is 20 kΩ.
The voltage gain from pin DTMF to pin LN is set at 26 dB.
100 µF
V
EE
MBE788
Automatic gain control has no effect on the DTMF
amplifier.
LEQ = CREG × RSLPE × RP.
RP = internal resistance.
RP = 17.5 kΩ.
Fig.7 Equivalent impedance between LN and VEE
.
2000 Mar 21
8
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
Receiving stage (pins IR, RX, GAR and QR)
The preferred value of RE1 is 100 kΩ.
The receive part consists of a receive amplifier and an
earpiece amplifier.
The earpiece amplifier offers a gain boost facility relative
to the initial gain. Resistor RE2 has to be replaced by the
network of RE21, RE22 and RE23 as shown in Fig.8.
THE RECEIVE AMPLIFIER (PINS IR AND RX)
R
E21 + RE22
The initial gain is defined by: –
------------------------------
RE1
The receive amplifier transfers the receive signal from
input IR to output RX. The input impedance of the receive
amplifier, between pins IR and VEE, is 20 kΩ. The voltage
gain from pin IR to RX is set at 33.4 dB. RX output is
intended to drive high ohmic (real) loads. Automatic gain
control is provided on the receive amplifier.
which corresponds to RE23 = ∞. The gain boost is realized
by a defined value of RE23 and is:
R
E21 + R
R E21 // RE22
–
E22 × 1 +
------------------------------
---------------------------------
RE23
RE1
Two external capacitors CGAR (connected between GAR
and QR) and CGARS (connected between GAR and VEE
THE EARPIECE AMPLIFIER (PINS GAR AND QR)
)
ensure stability. The CGAR capacitor provides a first-order
low-pass filter. The cut-off frequency corresponds to the
time constant CGAR × RE2. The relationship
The earpiece amplifier is an operational amplifier having
its output (QR) and inverting input (GAR) available. It can
be used in conjunction with two resistors to get some extra
gain or attenuation.
CGARS = 10 × CGAR must be fulfilled to ensure stability.
In an usual configuration (see Fig.8), output RX drives the
earpiece amplifier by means of RE1 connected between
RX and GAR. Feedback resistor RE2 of the earpiece
amplifier is connected between QR and GAR. Output QR
drives the earpiece.
The output voltages of both amplifiers are specified for
continuous wave drive. The maximum output swing
depends on the DC line voltage VLN, the RCC resistor, the
ICC current consumption of the circuit, the IP current
consumption of the peripheral circuits and the load
impedance.
The gain of the earpiece amplifier (from RX to QR) can be
set between +12 and −14 dB by means of resistor RE2.
C
GAR
R
R
CC
line
I
line
C
GARS
R
R
E1
E2
I
CC
LN
V
QR
GAR
RX
CC
C
TEA1114A
VCC
100 µF
EARPIECE
AMPLIFIER
R
RX
EXCH
R
E1
100 kΩ
GAR
C
C
GARS
R
E21
0.5V
EE
10 µF
CC
V
EXCH
V
GAR
EE
R
E23
V
R
E22
QR
Addition for gain boost of
earpiece amplifier
MGK808
Fig.8 Earpiece amplifier configuration.
9
2000 Mar 21
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
Automatic gain control (pin AGC)
Sidetone suppression
The TEA1114A anti-sidetone network comprising
The TEA1114A performs automatic line loss
compensation. The automatic gain control varies the gain
of the microphone amplifier and the gain of the receive
amplifier in accordance with the DC line current.
RCC // Zline, Rast1, Rast2, Rast3, RSLPE and Zbal (see Fig.9)
suppresses the transmitted signal in the earpiece.
Maximum compensation is obtained when the following
conditions are fulfilled:
The control range is 6.0 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
R
SLPE × Rast1 = RCC × (Rast2 + Rast3 )
R
ast2 × (Rast3 + RSLPE
-----------------------------------------------------------
ast1 × RSLPE
)
k =
R
The IC can be used with different configurations of feeding
bridge (supply voltage and bridge resistance) by
connecting an external resistor RAGC between pins
AGC and VEE. This resistor enables the Istart and Istop line
currents to be increased (the ratio between Istart and Istop is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.
Z bal = k × Zline
The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Zbal
.
In practice, Zline varies considerably with the line type and
the line length. Therefore, the value of Zbal should be for an
average line length which gives satisfactory sidetone
suppression with short and long lines. The suppression
also depends on the accuracy of the match between Zbal
and the impedance of the average line.
Mute function (pin MUTE)
The mute function performs the switching between the
speech mode and the dialling mode.
When MUTE is LOW, the DTMF input is enabled and the
microphone and receive amplifier inputs are disabled.
In this mode, the DTMF tones are sent to the receive
output at a low level (confidence tone).
The anti-sidetone network for the TEA1114A attenuates
the receiving signal from the line by 32 dB before it enters
the receiving amplifier. The attenuation is almost constant
over the whole audio frequency range.
When MUTE is HIGH, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled. The MUTE input is provided with an internal
A Wheatstone bridge configuration (see Fig.10) may also
be used.
More information on the balancing of an anti-sidetone
bridge can be obtained in our publication “Semiconductors
for Wired Telecom Systems; Application Handbook,
IC03b”. For ordering information please contact the Philips
Semiconductors sales office.
pull-up current source to VCC
.
2000 Mar 21
10
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
LN
R
R
CC
ast1
Z
line
IR
I
V
m
EE
Z
ir
R
ast2
R
SLPE
R
ast3
Z
bal
SLPE
MBE787
Fig.9 Equivalent circuit of TEA1114A anti-sidetone bridge.
LN
R
Z
CC
bal
Z
line
IR
I
V
m
EE
Z
ir
R
SLPE
R
R
A
ast1
SLPE
MBE786
Fig.10 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
11
2000 Mar 21
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VLN
positive continuous line voltage
V
EE − 0.4 12
V
V
repetitive line voltage during switch-on or
line interruption
VEE − 0.4 13.2
IDD
maximum input current at pin VDD
maximum voltage on all pins except pin VDD
line current
− 75
VEE − 0.4 VCC + 0.4
− 140
mA
V
Vn(max)
Iline
RSLPE = 20 Ω;
mA
see Figs 11 and 12
Ptot
total power dissipation
TEA1114A
Tamb = 75 °C;
see Figs 11 and 12
−
−
−
625
416
−
mW
mW
TEA1114AT
TEA1114AUH; note 1
storage temperature
ambient temperature
junction temperature
Tstg
Tamb
Tj
−40
−25
−
+125
+75
°C
°C
°C
125
Note
1. Mostly dependent on the maximum required ambient temperature, on the voltage between LN and SLPE and on the
thermal resistance between die ambient temperature. This thermal resistance depends on the application board
layout and on the materials used. Figure 13 shows the safe operating area versus this thermal resistance for ambient
temperature Tamb = 75 °C.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air; note 1
TEA1114A
70
K/W
K/W
K/W
TEA1114AT
TEA1114AUH
115
tbf by customer
application
Note
1. Mounted on epoxy board 40.1 × 19.1 × 1.5 mm.
2000 Mar 21
12
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
MGL212
150
handbook, halfpage
I
LN
(mA)
(1)
110
70
(2)
(3)
(4)
30
2
4
6
8
10
- V
12
(V)
V
LN
SLPE
(1) Tamb = 45 °C; Ptot = 1.000 W.
(2) Tamb = 55 °C; Ptot = 0.875 W.
(3) Tamb = 65 °C; Ptot = 0.750 W.
(4) Tamb = 75 °C; Ptot = 0.625 W.
Fig.11 DIP16 safe operating area (TEA1114A).
MGL213
150
handbook, halfpage
I
LN
(mA)
110
(1)
(2)
(3)
70
30
(4)
2
4
6
8
10
12
V
- V
(V)
LN
SLPE
(1) Tamb = 45 °C; Ptot = 0.666 W.
(2) Tamb = 55 °C; Ptot = 0.583 W.
(3) Tamb = 65 °C; Ptot = 0.500 W.
(4) Tamb = 75 °C; Ptot = 0.416 W.
Fig.12 SO16 safe operating area (TEA1114AT).
13
2000 Mar 21
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
FCA161
160
I
line
(mA)
(1)
120
(2)
(3)
(4)
80
(5)
(6)
(7)
40
0
2
4
6
8
10
12
V
(V)
SLPE
LINE
Rth(j-a) (K/W)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
40
50
60
75
90
105
130
Fig.13 Safe operating area at Tamb = 75 °C (TEA1114AUH).
2000 Mar 21
14
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
CHARACTERISTICS
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; pin AGC connected to VEE; Zline = 600 Ω; f = 1 kHz; measured according to test
circuits given in Figs 15, 16 and 17; Tamb = 25 °C for TEA1114A(T); Tj = 25 °C for TEA1114AUHT; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply (pins LN, VCC, SLPE, REG and VDD
)
THE LINE INTERFACE (PINS LN, SLPE AND REG)
Vref
stabilized reference voltage
between pins LN and SLPE
3.9
4.15
4.4
V
VLN
DC line voltage
Iline = 1 mA
−
1.45
2
−
V
V
V
V
V
I
I
I
line = 4 mA
−
−
line = 15 mA
4.05
−
4.35
7.1
3.6
4.65
7.55
−
line = 140 mA
VLN(Rext)
DC line voltage with an
external resistor RVA
RVA = 44.2 kΩ (between
pins LN and REG)
−
∆VLN(T)
DC line voltage variation with Tamb = −25 to +75 °C
temperature referred to 25 °C
−
±40
−
mV
THE INTERNAL SUPPLY POINT (PIN VCC
)
ICC
internal current consumption VCC = 3.6 V
−
−
1.25
3.6
1.5
mA
V
VCC
supply voltage for internal
circuitry
IP = 0 mA
−
THE REGULATED SUPPLY POINT (PIN VDD
)
ISUP
input current of the VDD
regulator (current from pin LN
not flowing through pin SLPE)
I
line = 1 mA
Iline = 4 mA
line ≥ 11 mA
−
−
−
0
−
−
−
mA
mA
mA
2.15
4.3
I
VDD
regulated supply voltage in:
speech mode
IDD = −3 mA;
3.0
3.3
3.6
V
VLN > 3.6 + 0.25 V (typ.);
I
line ≥ 11 mA
speech mode at reduced
performance
I
line = 4 mA
−
V
LN − 0.35 −
V
V
ringer mode
I
line = 0 mA; IDD = 75 mA 3.0
3.3
3.6
IDD
regulated supply current
available in:
speech mode
I
line ≥ 11 mA
−
−
−
−3
mA
mA
speech mode at reduced
performance
I
line = 4 mA
−0.5
−
trickle mode
Iline = 0 mA; VCC
−
−
100
nA
discharging; VDD = 1.2 V
2000 Mar 21
15
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Transmit stage (pins MIC+, MIC− and DTMF)
MICROPHONE AMPLIFIER (PINS MIC+ AND MIC−)
Zi
input impedance
differential between
pins MIC+ and MIC−
−
−
68
34
−
−
kΩ
kΩ
dB
dB
dB
single-ended between
pins MIC+/MIC− and VEE
Gv(TX)
voltage gain from
pins MIC+/MIC− to pin LN
VMIC = 4 mV (RMS)
f = 300 to 3400 Hz
Tamb = −25 to +75 °C
43.2
44.2
±0.2
±0.3
45.2
−
∆Gv(TX)(f)
∆Gv(TX)(T)
voltage gain variation with
frequency referred to 1 kHz
−
−
−
voltage gain variation with
temperature referred to 25 °C
−
CMRR
common mode rejection ratio
80
−
−
−
−
dB
V
VLN(max)(rms)
maximum sending signal
(RMS value)
Iline = 15 mA; THD = 2% 1.8
2.15
0.35
−78
Iline = 4 mA; THD = 10%
−
−
V
Vno(LN)
noise output voltage at pin LN psophometrically
weighted (P53 curve);
dBmp
pins MIC+/ MIC− shorted
through 200 Ω
DTMF AMPLIFIER (PIN DTMF)
Zi
input impedance
−
21
26
−
kΩ
Gv(DTMF)
voltage gain from pin DTMF to VDTMF = 20 mV (RMS);
25
27
dB
pin LN
MUTE = LOW
∆Gv(DTMF)(f)
∆Gv(DTMF)(T)
Gv(ct)
voltage gain variation with
frequency referred to 1 kHz
f = 300 to 3400 Hz
−
−
−
±0.2
±0.4
−9.2
−
−
−
dB
dB
dB
voltage gain variation with
temperature referred to 25 °C
Tamb = −25 to +75 °C
voltage gain from pin DTMF to VDTMF = 20 mV (RMS);
pin RX (confidence tone) L2 = 10 kΩ;
R
MUTE = LOW
Receiving stage (pins IR, RX, GAR and QR)
THE RECEIVE AMPLIFIER (PINS IR AND RX)
Zi
input impedance
−
21.5
33.4
−
kΩ
Gv(RX)
voltage gain from pin IR to
pin RX
VIR = 4 mV (RMS)
f = 300 to 3400 Hz
Tamb = −25 to +75 °C
32.4
34.4
dB
∆Gv(RX)(f)
∆Gv(RX)(T)
voltage gain variation with
frequency referred to 1 kHz
−
±0.2
±0.3
−
−
−
−
dB
dB
V
voltage gain variation with
temperature referred to 25 °C
−
VRX(max)(rms) maximum receiving signal on IP = 0 mA; sine wave
0.4
pin RX (RMS value)
drive; RL2 = 10 kΩ;
THD = 2%
2000 Mar 21
16
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IRX(max)
maximum source and sink
current on pin RX (peak
value)
IP = 0 mA; sine wave
drive
50
−
−
−
µA
Vno(RX)(rms)
noise output voltage at pin RX pin IR open-circuit;
−
−86
dBVp
(RMS value)
RL2 = 10 kΩ;
psophometrically
weighted (P53 curve)
THE EARPIECE AMPLIFIER (PINS GAR AND QR)
Gv(QR)
voltage gain from pin RX to
pin QR
VIR = 4 mV (RMS);
RE1 = RE2 = 100 kΩ
−
0
−
dB
∆Gv(QR)
voltage gain setting
RE1 = 100 kΩ
−14
−
+12
dB
V
VQR(max)(rms) maximum receiving signal on IP = 0 mA; sine wave
0.3
0.38
−
pin QR (RMS value)
drive; RL1 = 150 Ω;
THD = 2%
IP = 0 mA; sine wave
drive; RL1 = 450 Ω;
THD = 2%
0.46
0.56
−
−
V
Vno(QR)(rms)
noise output voltage at pin QR IR open-circuit;
−
−86
dBVp
(RMS value)
RL1 = 150 Ω;
RE1 = RE2 = 100 kΩ
psophometrically
weighted (P53 curve)
R
E1 = 100 kΩ;
−
−
−98
−
−
dBVp
dB
RE2 = 25 kΩ
Automatic gain control (pin AGC)
∆Gv(trx)
voltage gain control range for Iline = 85 mA
microphone and receive
amplifiers with respect to
Iline = 15 mA
6.0
Istart
Istop
highest line current for
maximum gain
−
−
23
59
−
−
mA
mA
lowest line current for
minimum gain
Mute function (pin MUTE)
VIL
LOW-level input voltage
V
EE − 0.4
−
−
2
VEE + 0.3
VCC + 0.4
10
V
VIH
HIGH-level input voltage
input current
VEE + 1.5
V
IMUTE
∆Gv(trx)(m)
−
µA
voltage gain reduction for:
microphone amplifier
receive amplifier
MUTE = LOW
MUTE = LOW
MUTE = LOW
MUTE = HIGH
−
−
−
−
80
80
80
80
−
−
−
−
dB
dB
dB
dB
earpiece amplifier
DTMF amplifier
2000 Mar 21
17
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
TEST AND APPLICATION INFORMATION
R
prot
Cz
Rz
R
CC
D1
1N4004
D3
D2
D4
Dz
C
emc
10 nF
V
AB
BA
d
619 Ω
10 V
C
VCC
100 µF
V
LN
SLPE
REG
IR
CC
n.c.
C
C
R
MIC−
TX1
C
REG
MIC−
MIC+
R
ast1
MIC−
MIC+
RX
130 kΩ
R
TX3
4.7 µF
C
R
IR
MIC+
TX2
100 nF
TEA1114A
R
AGC
AGC
DTMF
R
ast2
3.92 kΩ
C
R
DTMF
E1
GAR
C
GARS
R
100 kΩ
DTMF
ast3
220 nF
V
V
392 Ω
DD
EE
1 nF
C
V
R
E2
100 kΩ
GAR
100 pF
DD
R
R
C
bal1
130 Ω
SLPE
EAR
MUTE
QR
peripheral
supply
C
20 Ω
VDD
REC
220 µF
10 µF
V
C
R
EE
bal
bal2
MUTE
FCA002
220 nF
820 Ω
Fig.14 Basic application of the TEA1114A IC.
2000 Mar 21
18
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
C
VDD
220 µF
C
R
V
VCC
I
CC
LN
line
619 Ω
100 µF
I
I
DD
CC
LN
V
V
DD
CC
10 µF
R
L1
IR
100
µF
QR
R
C
MIC−
MIC+
DTMF
E2
GAR
V
MIC
TEA1114A
I
V
C
GAR
RX
line
O
GARS
3
R
mA
E1
100 kΩ
Z
line
V
REG
AGC
SLPE
R
MUTE
220
nF
EE
100
nF
600
Ω
V
DTMF
C
R
REG
4.7 µF
L2
10 kΩ
SLPE
20 Ω
S1
MGK809
VO
Voltage gain defined as Gv = 20 log
Microphone gain: S1 = open.
; VI = VMIC or VDTMF.
-------
VI
DTMF gain and confidence tone: S1 = closed.
Inputs not being tested should be open-circuit.
Fig.15 Test figure for defining transmit gains.
2000 Mar 21
19
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
C
VDD
220 µF
C
R
V
VCC
I
CC
LN
line
619 Ω
100 µF
I
I
DD
CC
V
QR
LN
V
V
DD
CC
10 µF
R
L1
IR
100
µF
QR
R
C
MIC−
MIC+
DTMF
E2
GAR
220
nF
TEA1114A
I
C
GAR
RX
line
GARS
R
E1
V
I
3 mA
100 kΩ
Z
line
V
REG
AGC
SLPE
R
MUTE
EE
100
nF
600
Ω
V
RX
C
R
REG
4.7 µF
L2
10 kΩ
SLPE
20 Ω
S1
MGK810
VO
Receive and earpiece gains: S1 = open.
Voltage gain defined as Gv = 20 log
; VO = VQR or VRX.
-------
VI
Inputs not being tested should be open-circuit.
Fig.16 Test figure for defining receive gains.
R
CC
619 Ω
LN
V
V
DD
CC
IR
QR
MIC−
MIC+
GAR
TEA1114A
DTMF
V
V
DD
10 µF
I
CC
DD
RX
V
REG
C
AGC SLPE
MUTE
EE
R
REG
4.7 µF
SLPE
20 Ω
MGK811
Inputs not being tested should be open-circuit.
Fig.17 Test figure for defining regulated supply (VDD) performance in ringer and trickle mode.
20
2000 Mar 21
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
BONDING PAD LOCATIONS FOR TEA1114AUH
All x/y coordinates represent the position of the centre of the pad (in µm) with respect to the origin (x/y = 0/0) of the die
(see Fig.18). The size of all pads is 80 µm × 80 µm.
COORDINATES
SYMBOL
PAD
x
y
LN
1
2
99
126
365.7
99
SLPE
REG
IR
3
377
99
4
639
99
AGC
DTMF
VDD
MUTE
QR
5
869
99
6
1162
1343
1366
1366
1366
1370
1219.5
1045
782.5
357.5
141.5
99
99
7
104
333
531
1010
1160
1160
1160
1160
1160
1160
963.5
764
570
8
9
n.c.
10
11
12
13
14
15
16
17
18
19
VEE
n.c.
GAR
RX
MIC+
MIC−
VCC
n.c.
99
LN
99
V
MICM
16
MICP
15
RX
14
GAR
13
n.c.
12
EE
11
n.c.
10
V
CC
17
18
19
n.c.
LN
QR
9
8
LN
1
MUTE
7
2
3
4
5
6
x
0,0
SLPE
REG
IR
AGC
DTMF
V
DD
FCA158
y
Fig.18 TEA1114AUH bonding pad locations.
21
2000 Mar 21
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
PACKAGE OUTLINES
DIP16: plastic dual in-line package; 16 leads (300 mil)
SOT38-4
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
b
2
16
9
M
H
pin 1 index
E
1
8
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
w
UNIT
mm
b
b
b
c
D
E
e
e
L
M
M
H
1
2
1
E
max.
min.
max.
max.
1.73
1.30
0.53
0.38
1.25
0.85
0.36
0.23
19.50
18.55
6.48
6.20
3.60
3.05
8.25
7.80
10.0
8.3
4.2
0.51
3.2
2.54
0.10
7.62
0.30
0.254
0.01
0.76
0.068 0.021 0.049 0.014
0.051 0.015 0.033 0.009
0.77
0.73
0.26
0.24
0.14
0.12
0.32
0.31
0.39
0.33
inches
0.17
0.020
0.13
0.030
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-01-14
SOT38-4
2000 Mar 21
22
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT109-1
076E07
MS-012
2000 Mar 21
23
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
SOLDERING
Introduction
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
WAVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
Through-hole mount packages
SOLDERING BY DIPPING OR BY SOLDER WAVE
• For packages with leads on two sides and a pitch (e):
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
300 and 400 °C, contact may be up to 5 seconds.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Surface mount packages
REFLOW SOLDERING
MANUAL SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320 °C.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
2000 Mar 21
24
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
Suitability of IC packages for wave, reflow and dipping soldering methods
SOLDERING METHOD
WAVE
REFLOW(1) DIPPING
suitable(2)
MOUNTING
PACKAGE
Through-hole mount DBS, DIP, HDIP, SDIP, SIL
−
suitable
Surface mount
BGA, SQFP
not suitable
not suitable(3)
suitable
suitable
−
−
HLQFP, HSQFP, HSOP, HTQFP, HTSSOP,
SMS
PLCC(4), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable
−
−
−
not recommended(4)(5) suitable
not recommended(6)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Mar 21
25
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern
processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no
control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors
assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of
the die. It is the responsibility of the customer to test and qualify their application in which the die is used.
2000 Mar 21
26
Philips Semiconductors
Product specification
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
NOTES
2000 Mar 21
27
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
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Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
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© Philips Electronics N.V. 2000
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
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Date of release: 2000 Mar 21
Document order number: 9397 750 06729
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TEA1114A; Low voltage telephone transmission circuit with dialler interface and regulated strong supply
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Description
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The TEA1114A is a bipolar integrated circuit that performs all speech and line interface functions required in fully electronic telephone sets.
It performs electronic switching between speech and dialling. The IC operates at a line voltage down to 1.45 V DC (with reduced
performance) to facilitate the use of telephone sets connected in parallel.
PC/PC-peripherals
Cross reference
When the line current is high enough, a fixed amount of current is derived from the LN pin in order to create a strong supply point at pin
VDD. The voltage at pin VDD is regulated to 3.3 V to supply peripherals such as dialler, LCD module and microcontroller.
Models
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End of Life information
Datahandbook system
Features
l Low DC line voltage; operates down to 1.45 V (excluding voltage drop over external polarity guard)
l Line voltage regulator with adjustable DC voltage
l 3.3 V regulated strong supply point for peripheral circuits compatible with:
- Speech mode
- Ringer mode
- Trickle mode.
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l Transmit stage with:
- Microphone amplifier with symmetrical high impedance inputs
- DTMF amplifier with confidence tone on receive output.
l Receive stage with:
TEA1114A
TEA1114A
- Receive amplifier with asymmetrical output
- Earpiece amplifier with adjustable gain (and gain boost facility) for all types of earpieces.
l MUTE input for pulse or DTMF dialling
l AGC line loss compensation for microphone and receive amplifiers.
Applications
l Line powered telephone sets with LCD module
l Cordless telephones
l Fax machines
l Answering machines.
Datasheet
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size
(kB)
Publication
release date Datasheet status
Page
count
Type nr.
Title
Datasheet
Download
TEA1114A Low voltage telephone transmission
circuit with dialler interface and
21-Mar-00
Product
Specification
28
150
regulated strong supply
Products, packages, availability and ordering
North American
Partnumber
Order code
(12nc)
buy
online
Partnumber
marking/packing
package device status
TEA1114A/C2
TEA1114AT/C2
9352 633 79112 Standard Marking * Tube
SOT38 Full production
SOT109 Full production
-
-
9352 633 80512 Standard Marking * Tube Dry Pack
Standard Marking * Reel Dry Pack,
9352 633 80518
SMD, 13"
SOT109 Full production
-
Please read information about some discontinued variants of this product.
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TEA1114A links to the similar products page containing an overview of products that are similar in function or related to the part
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products from the same functional category.
Copyright © 2000
Royal Philips Electronics
All rights reserved.
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