TEA2095TE1 [NXP]
GreenChip dual synchronous rectifier controller;
| 型号： | TEA2095TE1 |
| 厂家： | 
NXP |
| 描述： | GreenChip dual synchronous rectifier controller |
| 文件： | 总19页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TEA2095TE
GreenChip dual synchronous rectifier controller
Rev. 1.1 — 10 April 2020
Product data sheet
1 General description
The TEA2095TE is a new synchronous rectifier (SR) controller IC for switched-mode
power supplies. It incorporates an adaptive gate drive method for maximum efficiency at
any load.
The TEA2095TE is a dedicated controller IC for synchronous rectification on the
secondary side of resonant converters. It has two driver stages for driving the SR
MOSFETs, which rectify the outputs of the central tap secondary transformer windings.
The two gate driver stages have their own sensing inputs and operate independently.
The TEA2095TE is optimized for efficient operation with very low-ohmic MOSFETs and
switching at high frequencies.
The TEA2095TE is fabricated in a silicon-on-insulator (SOI) process.
2 Features and benefits
2.1 Efficiency features
• Adaptive gate drive for maximum efficiency at any load
• Supply current in energy save operation of 90 μA
• Regulation level of −25 mV for driving low-ohmic MOSFETs
2.2 Application features
• Wide supply voltage range from 4.5 V to 38 V
• Dual synchronous rectification for LLC resonant
• Supports 5 V operation with logic level SR MOSFETs
• Differential inputs for sensing the drain and source voltages of each SR MOSFET
• HSO8 package with exposed die pad
• Discharge of the output capacitor after mains disconnect
2.3 Control features
• SR control without minimum on-time
• Adaptive gate drive for fast turn-off at the end of conduction
• Undervoltage lockout (UVLO) protection with active gate pull-down
• Interlock function to prevent simultaneous conduction of the external MOSFETs
• Supports 1 MHz switching frequency
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
3 Applications
The TEA2095TE is intended for resonant power supplies. In such applications, it can
drive two external synchronous rectifier MOSFETs for the rectification of the voltages on
the two secondary windings of the transformer. These MOSFETs replace diodes. It can
be used in all power supplies requiring high efficiency:
• Adapters
• Power supplies for desktop PC and all-in-one PC
• Power supplies for television
• Power supplies for servers
4 Ordering information
Table 1.ꢀOrdering information
Type number
Package
Name
Description
Bond-wire Version
TEA2095TE/1/S30 HSO8
plastic thermal enhanced small outline package; 8 leads; body
width 3.9 mm; exposed die pad
Au
SOT786-3
TEA2095TE/1
HS08
plastic thermal enhanced small outline package; 8 leads; body
width 3.9 mm; exposed die pad
Cu
SOT786-3
5 Marking
Table 2.ꢀMarking
Type number
TEA2095TE/1
Marking code
TEA2095
TEA2095TE
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© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
2 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
6 Block diagram
VCC
UNDER
DRIVER
V AND I
REFERENCE
5 V
VOLTAGE
SUPPLY
LOCKOUT
REGULATOR
11 V
discharge
enable
LOGIC
ENERGY SAVE
CONTROL
IC
turn-on
TURN ON
on regulation
off regulation
GDA
DSA
SWITCH OFF
-400 mV
-25 mV
-20 mV
+150 mV
INTERLOCK disable
SSA
DSB
turn-on
TURN ON
on regulation
off regulation
GDB
SWITCH OFF
-400 mV
-25 mV
-20 mV
+150 mV
SSB
GND
aaa-033026
Figure 1.ꢀTEA2095TE block diagram
TEA2095TE
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© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
3 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
7 Pinning information
7.1 Pinning
1
2
3
4
8
7
6
5
GDB
GND
DSB
SSB
GDA
V
CC
IC
DSA
SSA
aaa-016990
Figure 2.ꢀTEA2095TE pin configuration
7.2 Pin description
Table 3.ꢀPin description
Symbol
GDB
GND
DSB
SSB
Pin
1
Description
gate drive output MOSFET B
ground
2
3
drain sense input for synchronous timing MOSFET B
source sense input MOSFET B
source sense input MOSFET A
drain sense input for synchronous timing MOSFET A
supply voltage
4
SSA
5
DSA
VCC
6
7
GDA
8
gate drive output MOSFET A
TEA2095TE
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© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
4 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
8 Functional description
8.1 Introduction
The TEA2095TE is a controller IC for synchronous rectification. It is perfectly suited
to be used in resonant applications. It can drive two synchronous rectifier MOSFETs
on the secondary side of the central tap transformer winding. Figure 3 shows a typical
configuration.
V
in
Q
prim1
C
PRIMARY
SIDE
CONTROLLER
HB
TR
Q
prim2
V
out
C
out
V
Q
Q
sec2
CC
IC1
sec1
DSA
GDA
SSA
DSB
GDB
SSB
IC
GND
aaa-016991
Figure 3.ꢀTEA2095TE typical configuration
8.2 Start-up and undervoltage lockout (VCC pin)
When the voltage on the VCC pin exceeds Vstart, the IC leaves the UVLO state and
activates the SR circuitry. When the voltage drops to below Vstop, the IC reenters the
UVLO state. The SR MOSFET gate driver outputs are actively kept low. For proper
operation, the VCC pin must be decoupled with an extra capacitor (not only with Cout
)
between the VCC pin and the GND pin. To reduce inductance effects because of high
gate driver currents, the extra capacitor must be connected as close as possible to the
IC.
8.3 Drain sense (DSA and DSB pins)
The drain sense pins are input pins capable of handling input voltages up to 120 V.
At positive drain sense voltages, the gate driver is in off-mode with pulled-down gate
driver pins (pins GDA or GDB). At negative drain sense voltages, the IC enables the SR
through sensing the drain source differential voltage.
TEA2095TE
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© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
5 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
8.4 Synchronous rectification (SR; DSA, SSA, DSB, and SSB pins)
The IC senses the voltage difference between the drain sense (pins DSA and DSB) and
the source sense (pins SSA and SSB) connections. The drain source differential voltage
of the SR MOSFET is used to drive the gate of the SR MOSFET.
When this absolute voltage difference is higher than Vact(drv), the corresponding gate
driver output turns on the external SR MOSFET. When the external SR MOSFET is
switched on, the absolute voltage difference between the drain and the source sense
connections drops to below Vact(drv). The regulation phase follows the turn-on phase.
In the regulation phase, the IC regulates the difference between the drain and the source
sense inputs to an absolute level (Vreg(drv)). When the absolute difference is higher than
Vreg(drv), the gate driver output increases the gate voltage of the external SR MOSFET
until the Vreg(drv) level is reached. The SR MOSFET does not switch off at low currents.
The IC operates without minimum on-time.
When the absolute difference is lower than Vdeact(drv), the gate driver output decreases
the gate voltage of the external SR MOSFET. The voltage waveform on the gate of the
SR MOSFET follows the waveform of the current through the SR MOSFET. When the
current through the external SR MOSFET reaches zero, the SR MOSFET is quickly
switched off.
After the SR MOSFET switch-off, the drain voltage increases. For a drain voltage above
Vswoff, a low ohmic gate pull-down of Rpd(G) keeps the gate of the SR MOSFET switched
off.
TEA2095TE
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Product data sheet
Rev. 1.1 — 10 April 2020
6 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
high
current
low
current
secondary
current
0 A
drain sense-
source sense
voltage
0 V
V
V
reg(drv)
act(drv)
t
d(act)(drv)
V
threshold
SR switch
gate
driver
0 V
aaa-018615
Figure 4.ꢀSynchronous rectification signals
8.5 Gate driver (GDA and GDB pins)
The gate driver circuit charges the gate of the external SR MOSFET during the rising part
of the current. The driver circuit discharges the gate during the falling part of the current.
The gate driver has a source capability of typically Isource and a sink capability of typically
Isink. The source and sink capability allow a fast turn-on and a fast turn-off of the external
SR MOSFET.
The maximum driver output voltage is limited to VG(max). This high output voltage drives
all MOSFET brands to the minimum on-state resistance.
In applications where the IC is supplied with 5 V, the maximum output voltage of the
driver is limited to 5 V. Logic level SR MOSFETs can be used.
During start-up conditions (VCC < Vstart) and UVLO, the driver output voltage is actively
pulled low.
TEA2095TE
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Product data sheet
Rev. 1.1 — 10 April 2020
7 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
8.6 Source sense connection (SSA and SSB pins)
The IC is equipped with additional source sense pins (SSA and SSB). These pins are
used for the measurement of the SR MOSFET drain-to-source voltage. The source
sense input must be connected as close as possible to the source pin of the external SR
MOSFET. It minimizes errors caused by voltage difference on PCB tracks because of
parasitic inductance in combination with large dI/dt values.
8.7 Interlock function
The TEA2095TE incorporates an interlock function. The interlock function avoids the
turn-on of both gate driver outputs at the same time.
After turn-off of one gate driver output, the IC waits typically 200 ns (td(interlock)) before
turning on the other gate driver output.
8.8 Discharge function
Disconnecting a power supply from the mains voltage should lead to zero output voltage
and the power indicator turn-off. The TEA2095TE contains a discharge function that
automatically discharges the output capacitor after a mains disconnect.
The detection of the mains disconnect happens by monitoring the activity of the
synchronous rectification and applying a 1.4 s threshold for discriminating between no-
load operation and power disconnect.
The discharge function creates a rapid discharging with a constant power dissipation of
0.4 W. Figure 5 shows the secondary current, the drain sense voltage, the gate driver
voltage, and the supply current.
The TEA2095TE enters the energy save mode 110 μs after the last SR cycle. The supply
current changes to a very low level of 90 μA for low no-load power. After 1.4 seconds
without SR activity, the TEA2095TE makes a transition to the discharge mode and draws
a current of 0.4 W divided by the VCC voltage.
For a VCC voltage below UVLO, the discharge current reduces gradually to a level of
8 mA at 1 V VCCvoltage.
The discharge function remains active in the UVLO state. When the increasing VCC
voltage exceeds the start level, the discharge current switches off.
TEA2095TE
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Product data sheet
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8 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
lsec
t
V
DS
12 V
5 V
t = 110 µs
V
GD
Ivcc
74 mA
operation
energy save
discharge
UVLO
start
34 mA
0.9 mA
90 µA
t = 1.4 seconds
t
aaa-034313
Figure 5.ꢀDischarge function signals (not to scale)
TEA2095TE
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Product data sheet
Rev. 1.1 — 10 April 2020
9 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
9 Limiting values
Table 4.ꢀLimiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Voltages
VCC
Parameter
Conditions
Min
Max Unit
supply voltage
−0.4 +38
−0.8 +120
−0.8 +120
−0.4 +0.4
−0.4 +0.4
−0.4 +12.0
−0.4 +12.0
V
V
V
V
V
V
V
Vsense(D)A
Vsense(D)B
Vsense(S)A
Vsense(S)B
VGDA
drain sense voltage A
drain sense voltage B
source sense voltage A
source sense voltage B
voltage on pin GDA
voltage on pin GDB
DC
DC
DC
DC
DC
DC
[1]
[1]
VGDB
General
fmax
maximum frequency
storage temperature
junction temperature
if not limited by Ptot
-
1
MHz
Tstg
−55
−40
+150 °C
+150 °C
Tj
Electrostatic discharge (ESD)
VESD electrostatic discharge
[2]
[3]
human body model (HBM)
-
-
2000
500
V
V
voltage
charged device model
(CDM)
[1] Output pin; not to be voltage driven
[2] Human body model: Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
[3] Charged device model: Equivalent to charging the IC and discharging each pin over a 1 Ω resistor.
10 Recommended operating conditions
Table 5.ꢀRecommended operating conditions
Symbol
VCC
Parameter
Conditions
Min
4.75
−40
Max
Unit
V
supply voltage
junction temperature
38
Tj
+125
°C
11 Thermal characteristics
Table 6.ꢀThermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from
junction to ambient
HSO8 package; PCB 4 layer;
4 vias; 0.4 mm; top/btm;
35 μm Cu; 60 mm x 125 mm;
exposed die pad soldered to
PCB
46
K/W
Rth(j-c)
thermal resistance from
junction to case
HSO8 package
8
K/W
TEA2095TE
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Product data sheet
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10 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
12 Characteristics
Table 7.ꢀCharacteristics
Tamb = 25 °C; VCC = 12 V; CGDA/CGDB = 10 nF (capacitors between GDA and GND and between GDB and GND). All
voltages are measured with respect to ground (pin 2). Currents are positive when flowing into the IC, unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supply voltage management (pin VCC
)
Vstart
start voltage
4.35
4.0
80
4.55
4.2
90
4.75
4.4
V
Vstop
stop voltage
V
ICC(oper)
operating supply current
energy-save
110
1.05
μA
mA
normal operation (without gate
charge)
0.7
0.9
tact(es)
energy save mode activation time
85
110
135
μs
Synchronous rectification sense input (pins DSA, SSA, DSB, and SSB)
Vact(drv)
Vreg(drv)
Vswoff
driver activation voltage
driver regulation voltage
switch-off voltage
Vsense(S)A/Vsense(S)B = 0 V
Vsense(S)A/Vsense(S)B = 0 V
Vsense(S)A/Vsense(S)B = 0 V
−450 −400 −350 mV
−33
60
-
−25
150
80
−20
200
-
mV
mV
ns
td(act)(drv)
driver activation delay time
Vsense(S)A/Vsense(S)B = 0 V;
normal operation;
time from step on VDSA/VDSB (2 V to
−0.5 V) to rising of VGDA/VGDB at 10 %
of end value
td(deact)(drv) driver deactivation delay time
Vsense(S)A/Vsense(S)B = 0 V;
normal operation;
time from step on VDSA/VDSB (−0.5 V
to 2 V) to falling of VGDA/VGDB at 90 %
of begin value
-
-
40
-
-
ns
ns
td
delay time
interlock delay time
200
Gate driver (pins GDA and GDB)
Isource
Isink
source current
sink current
peak current at VDS = −0.5 V;
VG = 0 V
-
-
-
−0.3
1
-
-
-
A
A
A
regulation current at VDS = 0 V;
VG = 5 V
peak current at VDS = 0.25 V;
VG = 5 V
2
Rpd(G)
gate pull-down resistance
maximum gate voltage
VDS = 12 V; IG = 100 mA
VGDA/VGDB at VCC = 5 V
VGDA/VGDB at VCC = 12 V
VGDA/VGDB at VCC = 38 V
2
2.5
3
Ω
V
V
V
VG(max)
4.98
10.4
10.7
4.99
10.6
11
5
10.8
11.2
TEA2095TE
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Product data sheet
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NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Discharge (pin VCC
)
td
delay time
discharge delay time
VVCC = 19.5 V
VVCC = 12 V
1.1
21
28
63
-
1.4
24
34
74
8
1.7
27
41
81
-
s
Idch
discharge current
mA
mA
mA
mA
VVCC = 5 V
VVCC = 1 V
TEA2095TE
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12 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
13 Application information
A resonant switched mode power supply with the TEA2095TE consists of a primary
side half-bridge, a transformer, a resonant capacitor, and an output stage. To obtain
low conduction loss rectification, SR MOSFETs are used in the output stage. The
TEA2095TE controls these SR MOSFETs.
The gate drive voltage for the SR switch is derived from the voltage difference between
the corresponding drain sense and source sense pins.
Special attention must be paid to the connection of the drain sense and source sense
pins. The voltages measured on these pins are used for gate drive voltage. Wrong
measurement results in a less efficient gate drive because the gate voltage is either
too low or too high. The connections to these pins must not interfere with the power
wiring. The power wiring conducts currents with high dI/dt values. It can easily cause
measurement errors resulting from induced voltages due to parasitic inductances.
The separate source-sense pins enable the direct sensing of the source voltage of the
external MOSFETs. Using the current carrying power ground tracks is not allowed.
13.1 Application diagram resonant application
V
in
Q
Q
prim1
C
PRIMARY
SIDE
CONTROLLER
HB
TR
prim2
V
out
C
out
V
Q
Q
sec2
CC
IC1
sec1
DSA
GDA
SSA
DSB
GDB
SSB
IC
GND
aaa-016991
Figure 6.ꢀTypical resonant application with TEA2095TE
TEA2095TE
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© NXP B.V. 2020. All rights reserved.
Product data sheet
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13 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
14 Package outline
HSO8: plastic thermal enhanced small outline package;
8 leads; body width 3.9 mm; exposed die pad
SOT786-3
A
D
E
X
c
y
exposed die pad
H
E
v
A
D
h
Z
8
5
Q
A
2
A
A
3
E
h
A
L
θ
1
p
L
pin 1 index
detail X
1
4
e
b
p
w
0
5 mm
scale
Dimensions (mm are the original dimensions)
Unit
(1)
(1)
θ
A
A
A
A
b
c
D
D
h
E
E
e
H
L
L
p
Q
v
w
y
Z
0.7
0.3
1
2
3
p
h
E
°
°
°
8
5
0
max 1.68 0.10 1.58
mm nom 1.55 0.05 1.50 0.25 0.41 0.20 4.90 3.81 3.90 2.29 1.27 5.99 1.05 0.64 0.65 0.25 0.25 0.1 0.5
min
0.49 0.25 5.00 3.91 4.00 2.39
6.20
0.89 0.75
1.43 0.00 1.43
0.35 0.19 4.80 2.95 3.80 2.19
5.84
0.41 0.55
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
sot786-3_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
13-06-05
15-02-12
SOT786-3
Figure 7.ꢀPackage outline SOT786-3 (HSO8)
TEA2095TE
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Product data sheet
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NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
15 Abbreviations
Table 8.ꢀAbbreviations
Acronym
CDM
Description
charged device model
electrostatic discharge
human body model
machine model
ESD
HBM
MM
MOSFET
SOI
metal-oxide-semiconductor field-effect transistor
silicon-on-insulator
SR
synchronous rectification
UVLO
undervoltage lockout
TEA2095TE
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Product data sheet
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15 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
16 Revision history
Table 9.ꢀRevision history
Document ID
Release date
20200410
Data sheet status
Change notice
Supersedes
TEA2095TE v.1.1
Modifications:
Product data sheet
-
TEA2095TE v.1
• Section 4 "Ordering information" has been updated.
20191025 Product data sheet
TEA2095TE v.1
-
-
TEA2095TE
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Product data sheet
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16 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
17 Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Product [short] data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
17.2 Definitions
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable
for the specified use without further testing or modification. Customers
are responsible for the design and operation of their applications and
products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
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and products planned, as well as for the planned application and use of
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on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
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default of the applications and the products or of the application or use by
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data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
17.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. NXP Semiconductors
takes no responsibility for the content in this document if provided by an
information source outside of NXP Semiconductors. In no event shall NXP
Semiconductors be liable for any indirect, incidental, punitive, special or
consequential damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the removal or replacement
of any products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any other
legal theory. Notwithstanding any damages that customer might incur for
any reason whatsoever, NXP Semiconductors’ aggregate and cumulative
liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
TEA2095TE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
17 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Security — While NXP Semiconductors has implemented advanced
security features, all products may be subject to unidentified vulnerabilities.
Customers are responsible for the design and operation of their applications
and products to reduce the effect of these vulnerabilities on customer’s
applications and products, and NXP Semiconductors accepts no liability for
any vulnerability that is discovered. Customers should implement appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use
17.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
GreenChip — is a trademark of NXP B.V.
TEA2095TE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.1 — 10 April 2020
18 / 19
NXP Semiconductors
TEA2095TE
GreenChip dual synchronous rectifier controller
Contents
1
General description ............................................ 1
2
Features and benefits .........................................1
Efficiency features ............................................. 1
Application features ........................................... 1
Control features .................................................1
Applications .........................................................2
Ordering information .......................................... 2
Marking .................................................................2
Block diagram ..................................................... 3
Pinning information ............................................ 4
Pinning ...............................................................4
Pin description ...................................................4
Functional description ........................................5
Introduction ........................................................ 5
Start-up and undervoltage lockout (VCC pin) .... 5
Drain sense (DSA and DSB pins) ..................... 5
Synchronous rectification (SR; DSA, SSA,
2.1
2.2
2.3
3
4
5
6
7
7.1
7.2
8
8.1
8.2
8.3
8.4
DSB, and SSB pins) ..........................................6
Gate driver (GDA and GDB pins) ...................... 7
Source sense connection (SSA and SSB
8.5
8.6
pins) ................................................................... 8
Interlock function ............................................... 8
Discharge function .............................................8
Limiting values ..................................................10
Recommended operating conditions .............. 10
Thermal characteristics ....................................10
Characteristics .................................................. 11
Application information ....................................13
Application diagram resonant application ........ 13
Package outline .................................................14
Abbreviations .................................................... 15
Revision history ................................................ 16
Legal information ..............................................17
8.7
8.8
9
10
11
12
13
13.1
14
15
16
17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2020.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 April 2020
Document identifier: TEA2095TE
相关型号：
TEA2095TES30
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