TEF6621_V01 [NXP]
Tuner on main-board IC;
| 型号： | TEF6621_V01 |
| 厂家： | 
NXP |
| 描述： | Tuner on main-board IC |
| 文件： | 总25页 (文件大小：809K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TEF6621
Tuner on main-board IC
Rev. 01.04 — 7 August 2008
Objective data sheet
1. General description
The TEF6621 is an AM/FM radio including Phase-Locked Loop (PLL) tuning system. The
system is designed in such a way, that it can be used as a world-wide tuner covering
common FM and AM bands for radio reception. All functions are controlled by the I2C-bus.
Besides the basic feature set it provides a good weak signal processing function.
2. Features
I FM tuner for Japan, Europe and US reception
I AM tuner for Long Wave (LW) and Medium Wave (MW) reception
I Integrated AM Radio Frequency (RF) selectivity
I Integrated PLL tuning system; controlled via I2C-bus
I Fully integrated Local Oscillator (LO)
I No alignment needed
I Very easy application on the main board
I No critical RF components
I Fully integrated Intermediate Frequency (IF) filters and FM stereo decoder
I Fully integrated FM noise blanker
I Field strength (LEVEL), multipath [Wideband AM (WAM)] and noise [UltraSonic Noise
(USN)] dependent stereo blend
I Field strength (LEVEL), multipath (WAM) and noise (USN) dependent High-Cut
Control (HCC)
I Field strength (LEVEL), multipath (WAM) and noise (USN) dependent soft mute
I Single power supply
TEF6621
NXP Semiconductors
Tuner on main-board IC
3. Quick reference data
Table 1.
Symbol
VCC
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
supply voltage
supply current
on pins VCC1 and VCC2
8
8.5
9
V
ICC
into pins VCC1, VCC2 and
VREGSUP
FM
AM
90
120
134
140
150
mA
mA
100
FM path
fRF
RF frequency
FM tuning range
76
-
-
108
-
MHz
Vi(sens)
input sensitivity voltage
(S+N)/N = 26 dB; including
weak signal handling
5
dBµV
(S+N)/N
THD
signal plus noise-to-noise ratio
total harmonic distortion
Vi(RF) = 1 mV; ∆f = 22.5 kHz
55
-
60
-
dB
%
mono; ∆f = 75 kHz;
0.4
0.8
Vi(RF) = 1 mV
αimage
αcs
image rejection
fRF(image) = fRF(wanted) ± 2 × fIF
45
26
60
40
-
-
dB
dB
channel separation
Vi(RF) = 1 mV; data byte Fh
bits CHSEP[2:0] = 100
AM path
fRF
RF frequency
AM (LW) tuning range
AM (MW) tuning range
144
522
-
-
288
kHz
kHz
1710
Vi(sens)
input sensitivity voltage
S/N = 26 dB; data byte 3h
bits DEMP[1:0] = 10
MW
-
34
40
56
0.7
55
-
dBµV
dBµV
dB
LW
-
-
(S+N)/N
THD
signal plus noise-to-noise ratio
total harmonic distortion
image rejection
Vi(RF) = 10 mV
Vi(RF) = 1 mV; m = 80 %
fRF(image) = fRF(wanted) ± 2 × fIF
50
-
-
1
-
%
αimage
40
dB
4. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
TEF6621T
SO32
plastic small outline package; 32 leads; body width 7.5 mm
SOT287-1
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
2 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
5. Block diagram
32
AMSELOUT2
1
2
AMRFIN
31
AMSELOUT1
AMRFDEC
30
AM TUNER
AMIFAGC1
3
4
29
FMIN2
FMIN1
AMSELIN2
FM TUNER
28
AMSELIN1
27
TEST
5
6
7
GNDRF
TEF6621T
26
PLLREF
V
CC2
25
24
PLL TUNING
SYSTEM
PLL
AMRFAGC
VCODEC
8
23
22
21
20
LOUT
ROUT
GND
STEREO DECODER
HIGH CUT
SOFT MUTE
FM NOISE BLANKER
9
OUTPUT
V
CC1
POWER
SUPPLY
10
11
GNDAUD
AMIFAGC2
VREGSUP
VREF
12
13
14
19
18
17
MPXIN
MPXOUT
RSSI
SDA
SIGNAL
IMPROVEMENT
CONTROL
2
I C-BUS
SCL
GNDD
15
16
XTAL2
XTAL1
008aaa134
Fig 1. Block diagram of TEF6621T
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
3 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
6. Pinning information
6.1 Pinning
1
2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
AMRFIN
AMRFDEC
FMIN2
AMSELOUT2
AMSELOUT1
AMIFAGC1
AMSELIN2
AMSELIN1
TEST
3
4
FMIN1
5
GNDRF
6
V
CC2
7
AMRFAGC
LOUT
PLLREF
PLL
8
TEF6621T
9
ROUT
VCODEC
GND
10
11
12
13
14
15
16
GNDAUD
AMIFAGC2
MPXIN
V
CC1
VREGSUP
VREF
SDA
MPXOUT
RSSI
XTAL2
SCL
XTAL1
GNDD
008aaa135
Fig 2. Pin configuration
6.2 Pin description
Table 3.
Symbol
AMRFIN
AMRFDEC
FMIN2
Pin description
Pin
1
Description
AM RF single-ended input
AM RF decoupling
FM RF differential input 2
FM RF differential input 1
RF ground
2
3
FMIN1
4
GNDRF
VCC2
5
6
supply voltage 2
AMRFAGC
LOUT
7
AM RF Automatic Gain Control (AGC)
audio left output
8
ROUT
9
audio right output
GNDAUD
AMIFAGC2
MPXIN
MPXOUT
RSSI
10
11
12
13
14
15
16
17
18
audio ground
AM IF AGC 2
FM Multiplex (MPX) and AM audio input to stereo decoder
FM MPX and AM audio output from tuner part
Received Signal Strength Indication (RSSI)
4 MHz crystal oscillator pin 2
4 MHz crystal oscillator pin 1
digital ground
XTAL2
XTAL1
GNDD
SCL
I2C-bus clock input
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
4 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 3.
Pin description …continued
Description
Symbol
SDA
Pin
19
20
21
22
23
24
25
26
27
28
29
30
31
32
I2C-bus data input and output
VREF
reference voltage decoupling
VREGSUP
VCC1
supply voltage internal voltage regulators
supply voltage 1
GND
ground
VCODEC
PLL
decoupling for Voltage-Controlled Oscillator (VCO) supply voltage
PLL tuning voltage
PLLREF
TEST
PLL reference voltage
test pin; leave open in normal operation
AM selectivity input 1
AMSELIN1
AMSELIN2
AMIFAGC1
AMSELOUT1
AMSELOUT2
AM selectivity input 2
AM IF AGC 1
AM selectivity output 1
AM selectivity output 2
7. Functional description
7.1 FM tuner
The RF input signal is mixed to a low IF with inherent image suppression. The IF signal is
filtered and demodulated. The complete signal path is fully integrated.
7.2 AM tuner
The RF signal is filtered and mixed to a low IF with inherent image suppression. The IF
signals are filtered and demodulated. The signal path is highly integrated.
7.3 PLL tuning system
The PLL tuning system includes a fully integrated VCO. To avoid problems with unwanted
signals on image side, the receiver controls automatically high-side or low-side injection.
7.4 FM stereo decoder
The MPX signal from the FM tuner is translated by the stereo decoder into a left and right
audio channel. Good channel separation is achieved without alignment.
7.5 Weak signal processing and noise blanker
The reception quality of the station received is measured by a combination of detectors:
field strength (LEVEL), multipath (WAM) and noise (USN). The audio processing functions
soft mute, HCC and stereo blend are controlled accordingly to maintain the best possible
audio quality in case of poor signal conditions. Audio disturbances like e.g. ignition noise
are suppressed by the noise blanker circuit, using USN detection on MPX and spike
detection on the level signal.
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
5 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
9. Limiting values
Table 57. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCC
Parameter
Conditions
Min
−0.3
−0.3
Max
+10
Unit
V
supply voltage
on pins VCC1 and VCC2
∆VCCn
voltage difference between any between pins VCC1 and VCC2
supply pins
+0.3
V
VSCL
voltage on pin SCL
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−40
+6
V
VSDA
voltage on pin SDA
+6
V
VAMRFDEC
VAMRFIN
VAMRFAGC
VAMIFAGC2
VRSSI
voltage on pin AMRFDEC
voltage on pin AMRFIN
voltage on pin AMRFAGC
voltage on pin AMIFAGC2
RSSI voltage
+6
V
+6
V
+6
V
+6
V
+6
V
VVCODEC
VPLL
voltage on pin VCODEC
voltage on pin PLL
+6
V
+6
V
VPLLREF
VTEST
VAMIFAGC1
VVREF
Vn
voltage on pin PLLREF
voltage on pin TEST
+6
V
+6
V
voltage on pin AMIFAGC1
voltage on pin VREF
+6
V
+6
V
voltage on any other pin
storage temperature
+VCC
+150
+85
150
+2000
+200
V
Tstg
°C
°C
°C
V
Tamb
ambient temperature
−20
Tj
junction temperature
-
[1]
[2]
Vesd
electrostatic discharge voltage human body model
machine model
−2000
−200
V
[1] Class 2 according to JESD22-A114.
[2] Class B according to EIA/JESD22-A115.
10. Thermal characteristics
Table 58. Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
[1]
Rth(j-a)
thermal resistance from
junction to ambient
in free air; single layer board with a
copper thickness of 35 µm;
see Figure 28
48
K/W
Ψj-top
thermal characterization
parameter from junction to top
of package
4.5
K/W
[1] The thermal resistance depends strongly on the PCB design. An application different to Figure 28 must ensure that the thermal
resistance is below 54 K/W to avoid violation of the maximum junction temperature; see Table 57.
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
39 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
11. Static characteristics
Table 59. Static characteristics
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
Symbol
VCC
Parameter
Conditions
Min
Typ
Max
Unit
supply voltage
supply current
on pins VCC1 and VCC2
8
8.5
9
V
ICC
into pins VCC1, VCC2 and
VREGSUP
FM
90
120
134
-
140
150
-
mA
mA
V
AM
100
6.35
VVREGSUP
voltage on pin
VREGSUP
Tamb = −20 °C to +85 °C
Power-on reset
VP(POR)
Vhys(POR)
tstart
power-on reset supply reset at power-on
voltage
6.5
6.75
0.2
10
7.0
-
V
power-on reset
hysteresis voltage
-
-
V
start time
series resistance of crystal
100
ms
Rs = 150 Ω
Logic pins SDA and SCL (voltage referenced to pin GNDD)
[1]
[1]
VIH
HIGH-level input
voltage
1.58
-
-
5.5
V
V
VIL
LOW-level input
voltage
−0.5
+1.04
[1] SDA and SCL HIGH and LOW internal thresholds are specified according to an I2C-bus voltage of 2.5 V ± 10 % or 3.3 V ± 5 %. The
I2C-bus interface tolerates also SDA and SCL signals from a 5 V I2C-bus, but does not fulfill the 5 V I2C-bus specification completely.
The TEF6621 complies with the fast-mode I2C-bus protocol. The maximum I2C-bus communication speed is 400 kbit/s.
12. Dynamic characteristics
Table 60. Dynamic characteristics
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
FM condition: all RF voltages refer to an unterminated RMS voltage with a source impedance 75 Ω; fmod = 1 kHz,
∆f = 22.5 kHz, de-emphasis = 50 µs, fRF = 97.1 MHz; unless otherwise specified.
AM condition: all RF voltages are RMS values measured at the input of a 15 pF/60 pF dummy aerial; fmod = 400 Hz,
m = 30 %, fRF = 990 kHz; unless otherwise specified.
All values measured in a test circuit according to Figure 29; default settings; audio signals measured at LOUT and ROUT with
IEC tuner filter (200 Hz to 15 kHz; IEC 60315-4); unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Crystal oscillator; pins XTAL1 and XTAL2
fxtal
crystal frequency
fundamental frequency
-
4
-
-
MHz
10−6
∆fxtal/fxtal
relative crystal frequency device inaccuracy
variation
−45
+45
Ci
Ri
input capacitance
input capacitance from pin XTAL1 and
pin XTAL2 to ground
1
-
3
-
4
pF
input resistance
−750
Ω
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
40 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 60. Dynamic characteristics …continued
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
FM condition: all RF voltages refer to an unterminated RMS voltage with a source impedance 75 Ω; fmod = 1 kHz,
∆f = 22.5 kHz, de-emphasis = 50 µs, fRF = 97.1 MHz; unless otherwise specified.
AM condition: all RF voltages are RMS values measured at the input of a 15 pF/60 pF dummy aerial; fmod = 400 Hz,
m = 30 %, fRF = 990 kHz; unless otherwise specified.
All values measured in a test circuit according to Figure 29; default settings; audio signals measured at LOUT and ROUT with
IEC tuner filter (200 Hz to 15 kHz; IEC 60315-4); unless otherwise specified.
Symbol
Tuning system
C/NLO
Parameter
Conditions
Min
Typ
Max
Unit
LO carrier-to-noise ratio
tuning time
fLO = 100 MHz; ∆f = 10 kHz
-
-
98
-
-
dBc/√Hz
ttune
FM (Europe/USA/Japan)
1.8
ms
fRF = 87.5 MHz to 108 MHz
AM (MW) fRF = 0.53 MHz to 1.7 MHz
AM (LW) fRF = 0.144 MHz to 0.288 MHz
FM tuning range
-
9
-
ms
-
3.5
-
-
ms
fRF
RF frequency
76
144
522
-
108
288
MHz
kHz
AM (LW) tuning range
-
AM (MW) tuning range
-
1710 kHz
ftune(step)
step of tuning frequency
input sensitivity voltage
FM (Europe/USA/Japan)
AM (LW and MW)
50
1
-
-
kHz
kHz
-
FM path
Vi(sens)
(S+N)/N = 26 dB; without weak signal
handling
-
-
-
5.5
5
-
-
-
dBµV
dBµV
dBµV
(S+N)/N = 26 dB; including weak signal
handling
(S+N)/N = 46 dB; including weak signal
handling
16
NF
noise figure
-
6
9
-
dB
dB
(S+N)/N
signal plus noise-to-noise Vi(RF) = 1 mV; ∆f = 22.5 kHz
55
60
ratio
αripple
ripple rejection
Vripple / Vaudio; Vripple = 100 mV;
ripple = 100 Hz
34
44
-
dB
f
fIF
IF frequency
-
150
60
-
-
-
kHz
dB
αimage
IP3
image rejection
fRF(image) = fRF(wanted) ± 2 × fIF
45
106
third-order intercept point fRF(unw)1 = 97.5 MHz;
113
dBµV
fRF(unw)2 = 97.9 MHz; Vi(RF) = 80 dBµV
Sdyn
dynamic selectivity
static selectivity
Vi(RF) = 10 µV; ∆fRF(unw) = 22.5 kHz;
(S+N)/N = 26 dB; mono; fAF = 1 kHz
∆fRF = 100 kHz
∆fRF = 200 kHz
-
-
3
-
-
dB
dB
55
Sstat
maximum IF bandwidth
f
f
f
i(RF) ± 100 kHz
10
54
65
14
64
75
25
74
90
dB
dB
dB
i(RF) ± 200 kHz
i(RF) ± 300 kHz (excluding image)
αsup(AM)
AM suppression
AM: fAF = 1 kHz; m = 30 %
Vi(RF) = 0.05 mV to 20 mV
Vi(RF) = 20 mV to 500 mV
45
40
55
50
-
-
dB
dB
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
41 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 60. Dynamic characteristics …continued
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
FM condition: all RF voltages refer to an unterminated RMS voltage with a source impedance 75 Ω; fmod = 1 kHz,
∆f = 22.5 kHz, de-emphasis = 50 µs, fRF = 97.1 MHz; unless otherwise specified.
AM condition: all RF voltages are RMS values measured at the input of a 15 pF/60 pF dummy aerial; fmod = 400 Hz,
m = 30 %, fRF = 990 kHz; unless otherwise specified.
All values measured in a test circuit according to Figure 29; default settings; audio signals measured at LOUT and ROUT with
IEC tuner filter (200 Hz to 15 kHz; IEC 60315-4); unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
FM front-end; pins FMIN1 and FMIN2
Ri(dif)
Ci(dif)
differential input
resistance
fRF = 97.1 MHz; maximum gain
fRF = 97.1 MHz
200
-
300
4
400
7
Ω
differential input
capacitance
pF
FM RF AGC
Vstart(AGC)
AGC start voltage
RF input voltage for first AGC step;
Vi(RF) value, at which the RF gain
decreases by 6 dB with increasing
Vi(RF); data byte 2h
bits RFAGC[1:0] = 00
bits RFAGC[1:0] = 01
bits RFAGC[1:0] = 10
bits RFAGC[1:0] = 11
83
81
79
77
1
86
84
82
80
-
89
87
85
83
5
dBµV
dBµV
dBµV
dBµV
dB
Vi(RF)AGC(hys) hysteresis of AGC RF
input voltage
hysteresis of AGC start
FM IF AGC
Vi(RF)AGC
AGC RF input voltage
Vi(RF) value, at which the IF gain
decreases by 6 dB with increasing
71
1
76
-
81
6
dBµV
Vi(RF); start of AGC; first step
Vi(RF)AGC(hys) hysteresis of AGC RF
input voltage
hysteresis of AGC start
dB
FM RSSI; pin RSSI
VRSSI
RSSI voltage
Vi(RF) = −20 dBµV
Vi(RF) = 20 dBµV
Vi(RF) = 40 dBµV
0.6
1.6
2.5
45
0.8
1.9
2.9
50
1.0
2.2
3.3
55
V
V
V
∆VRSSI/∆Li(RF) RSSI voltage difference to between Vi(RF) = 20 dBµV and
mV/dB
RF input level difference
ratio
Vi(RF) = 40 dBµV
FM IF counter
fIFc(res)
IF counter frequency
resolution
-
5
-
kHz
FM demodulator; pin MPXOUT
Ro
output resistance
load resistance
load capacitance
-
-
100
Ω
RL
5
-
-
kΩ
pF
kHz
CL
-
-
20
-
∆fmax
maximum frequency
deviation
THD = 3 %; Vi(RF) = 10 mV
115
140
Vo
output voltage
∆f = 22.5 kHz; fAF = 1 kHz
180
230
300
mV
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
42 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 60. Dynamic characteristics …continued
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
FM condition: all RF voltages refer to an unterminated RMS voltage with a source impedance 75 Ω; fmod = 1 kHz,
∆f = 22.5 kHz, de-emphasis = 50 µs, fRF = 97.1 MHz; unless otherwise specified.
AM condition: all RF voltages are RMS values measured at the input of a 15 pF/60 pF dummy aerial; fmod = 400 Hz,
m = 30 %, fRF = 990 kHz; unless otherwise specified.
All values measured in a test circuit according to Figure 29; default settings; audio signals measured at LOUT and ROUT with
IEC tuner filter (200 Hz to 15 kHz; IEC 60315-4); unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Audio part; pin MPXIN
Ri
input resistance
data byte 3h bit LOCUT = 0 (FM or AM)
data byte 3h bit LOCUT = 1 (AM)
balance between R and L channel
-
220
16
-
-
kΩ
kΩ
dB
dB
-
-
αbal(ch)
channel balance
pilot suppression
−1
30
+1
-
αsup(pilot)
9 % pilot; fpilot = 19 kHz; referenced to
91 % FM modulation
40
mpilot
modulation degree of pilot threshold for pilot detection
tone
stereo on
2
3.9
3.1
0.8
30
5.8
5
%
stereo off
pilot hysteresis
1.2
0.7
-
%
αhys(pilot)
1.6
100
%
tdet(pilot)
pilot detection time
ms
Audio output; pins LOUT and ROUT
Vo
output voltage
∆f = 22.5 kHz; fAF = 1 kHz
data byte 3h bit OUTA = 1
data byte 3h bit OUTA = 0
200
80
290
120
410
175
mV
mV
αAF
AF attenuation
mono; pre-emphasis = 50 µs;
referenced to fAF = 1 kHz
fAF = 50 Hz
−0.6 −0.1 +0.4
dB
dB
dB
fAF = 15 kHz
−1.5
0
+1.5
-
αcs
channel separation
Vi(RF) = 1 mV; data byte Fh
bits CHSEP[2:0] = 100
26
40
THD
total harmonic distortion
mono; ∆f = 75 kHz; Vi(RF) = 1 mV
stereo; ∆f = 67.5 kHz; L or R
-
0.4
0.8
1
%
-
-
-
-
%
RL
CL
load resistance
10
-
-
kΩ
pF
load capacitance
20
FM noise blanker
(S+N)/N
signal plus noise-to-noise noise pulses at RF input signal tp = 5 ns;
-
30
-
dB
ratio
tr < 1 ns; tf < 1 ns; fp = 100 Hz;
Vp = 500 mV; Vi(RF) = 40 dBµV;
quasi peak; audio filter according
“ITU-R BS.468-4”
AM path
Vi(sens)
input sensitivity voltage
S/N = 26 dB; data byte 3h
bits DEMP[1:0] = 10
MW
-
-
-
34
40
1
-
-
-
dBµV
LW
dBµV
Vn(i)(eq)
equivalent input noise
voltage
Csource = 100 pF
nV/√Hz
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
43 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 60. Dynamic characteristics …continued
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
FM condition: all RF voltages refer to an unterminated RMS voltage with a source impedance 75 Ω; fmod = 1 kHz,
∆f = 22.5 kHz, de-emphasis = 50 µs, fRF = 97.1 MHz; unless otherwise specified.
AM condition: all RF voltages are RMS values measured at the input of a 15 pF/60 pF dummy aerial; fmod = 400 Hz,
m = 30 %, fRF = 990 kHz; unless otherwise specified.
All values measured in a test circuit according to Figure 29; default settings; audio signals measured at LOUT and ROUT with
IEC tuner filter (200 Hz to 15 kHz; IEC 60315-4); unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
(S+N)/N
signal plus noise-to-noise Vi(RF) = 10 mV
ratio
50
56
-
dB
fIF
IF frequency
-
25
-
kHz
dB
αimage
Bfltr(IF)
Sstat
image rejection
IF filter bandwidth
static selectivity
fRF(image) = fRF(wanted) ± 2 × fIF
−3 dB bandwidth
40
5
55
-
6.5
48
8
-
kHz
dB
f
tune ± 10 kHz
tune ± 20 kHz
40
65
120
f
78
-
dB
Vi(RF)(max)
IP2
maximum RF input
voltage
THD = 10 %; m = 80 %; active antenna
50 Ω
135
-
dBµV
second-order intercept
point
150
116
170
127
-
-
dBµV
dBµV
IP3
third-order intercept point ∆f = 40 kHz
AM LNA and AM RF AGC; input pins AMRFIN and AMRFDEC
Ri
Ci
input resistance
fRF = 990 kHz
-
-
20
-
-
Ω
[1][2]
input capacitance
AGC maximum gain
530
pF
MW band with passive antenna (measured with dummy aerial 15 pF/60 pF)
Vi(RF)AGC
AGC RF input voltage
switched LNA AGC: Vi(RF) value, at
which the LNA gain decreases with
increasing Vi(RF); m = 0 %; start of AGC;
first step
110
113
116
dBµV
Vi(RF)AGC(hys) hysteresis of AGC RF
input voltage
hysteresis of AGC start
1
4
7
dB
MW band with active antenna (measured with dummy aerial 50 Ω)
Vi(RF)AGC
AGC RF input voltage
switched LNA AGC: Vi(RF) value, at
which the LNA gain decreases with
increasing Vi(RF); m = 0 %; start of AGC;
first step
78
81
84
dBµV
Vi(RF)AGC(hys) hysteresis of AGC RF
input voltage
hysteresis of AGC start
1
-
3
6
-
dB
LW band with passive antenna (measured with dummy aerial 15 pF/60 pF)
Vi(RF)AGC
AGC RF input voltage
switched LNA AGC: Vi(RF) value, at
which the LNA gain decreases with
increasing Vi(RF); fRF = 207 kHz;
m = 0 %; start of AGC; first step
104
dBµV
Vi(RF)AGC(hys) hysteresis of AGC RF
input voltage
hysteresis of AGC start
1
4
7
dB
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
44 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 60. Dynamic characteristics …continued
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
FM condition: all RF voltages refer to an unterminated RMS voltage with a source impedance 75 Ω; fmod = 1 kHz,
∆f = 22.5 kHz, de-emphasis = 50 µs, fRF = 97.1 MHz; unless otherwise specified.
AM condition: all RF voltages are RMS values measured at the input of a 15 pF/60 pF dummy aerial; fmod = 400 Hz,
m = 30 %, fRF = 990 kHz; unless otherwise specified.
All values measured in a test circuit according to Figure 29; default settings; audio signals measured at LOUT and ROUT with
IEC tuner filter (200 Hz to 15 kHz; IEC 60315-4); unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
LW band with active antenna (measured with dummy aerial 50 Ω)
Vi(RF)AGC
AGC RF input voltage
switched LNA AGC: Vi(RF) value, at
which the LNA gain decreases with
increasing Vi(RF); fRF = 207 kHz;
m = 0 %; start of AGC; first step
-
80
-
dBµV
Vi(RF)AGC(hys) hysteresis of AGC RF
input voltage
hysteresis of AGC start
1
4
7
dB
Continuous AM RF AGC
Vi(RF)AGC
AGC RF input voltage
linear RF AGC: Vi(RF) at which AGC
starts; m = 0 %
data byte 2h bits RFAGC[1:0] = 00
data byte 2h bits RFAGC[1:0] = 01
data byte 2h bits RFAGC[1:0] = 10
data byte 2h bits RFAGC[1:0] = 11
Vi(RF) = 10 mV to 600 mV
87
85
83
81
-
90
88
86
84
64
3.2
35
93
91
89
87
-
dBµV
dBµV
dBµV
dBµV
ms
ts
settling time
Vi(RF) = 600 mV to 10 mV
-
-
s
Isource(AGC)
AGC source current
AGC attack; Vi(RF)M = 105 dBµV (peak);
25
50
µA
normal mode
AGC attack; fast mode after tuning and
AGC switching
0.7
0.7
1
1
1.4
mA
Isink(AGC)
AGC sink current
AGC release; normal mode
1.4
35
µA
µA
AGC release; fast mode after tuning and
AGC switching
17.5 25
Continuous IF AGC 1
Vi(RF)AGC
AGC RF input voltage
linear IF AGC 1: Vi(RF) at which AGC
starts; m = 0 %
59
35
62
50
65
70
dBµV
µA
Isource(AGC)
AGC source current
AGC sink current
AGC attack; Vi(RF)M = 80 dBµV (peak);
normal mode
AGC attack; fast mode after tuning and
AGC switching
0.875 1.25 1.75
mA
Isink(AGC)
AGC release; normal mode
0.7
1
1.4
35
µA
µA
AGC release; fast mode after tuning and
AGC switching
17.5 25
Continuous IF AGC 2
Vi(RF)AGC
AGC RF input voltage
linear IF AGC 2: Vi(RF) at which AGC
starts; m = 0 %
19
4
22
6
25
8
dBµV
µA
Isource(AGC)
AGC source current
AGC attack; Vi(RF)M = 50 dBµV (peak);
normal mode
AGC attack; fast mode after tuning and
AGC switching
100
150
200
µA
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
45 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 60. Dynamic characteristics …continued
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
FM condition: all RF voltages refer to an unterminated RMS voltage with a source impedance 75 Ω; fmod = 1 kHz,
∆f = 22.5 kHz, de-emphasis = 50 µs, fRF = 97.1 MHz; unless otherwise specified.
AM condition: all RF voltages are RMS values measured at the input of a 15 pF/60 pF dummy aerial; fmod = 400 Hz,
m = 30 %, fRF = 990 kHz; unless otherwise specified.
All values measured in a test circuit according to Figure 29; default settings; audio signals measured at LOUT and ROUT with
IEC tuner filter (200 Hz to 15 kHz; IEC 60315-4); unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
1.4
35
Unit
µA
Isink(AGC)
AGC sink current
AGC release; normal mode
0.7
1
AGC release; fast mode after tuning and
AGC switching
17.5 25
µA
AM demodulator; pin MPXOUT
Vo output voltage
Audio output; pins LOUT and ROUT
m = 30 %
175
210
250
mV
Vo
output voltage
m = 30 %; fAF = 400 Hz; data byte 3h
bits DEMP[1:0] = 10
data byte 3h bit OUTA = 1
data byte 3h bit OUTA = 0
200
85
270
115
355
150
mV
mV
αAF
AF attenuation
referenced to fAF = 400 Hz;
210 mV input at pin MPXIN
fAF = 100 Hz; data byte 3h
bit LOCUT = 1
−4.5 −3
−4.5 −3
−1.5
−2
dB
dB
dB
fAF = 1.5 kHz; data byte 3h
bits DEMP[1:0] = 10
fAF = 5 kHz; data byte 3h
bits DEMP[1:0] = 10
−24
−21
−18
THD
total harmonic distortion
ripple rejection
Vi(RF) = 1 mV; m = 80 %
-
0.7
37
1
-
%
αripple
Vripple / Vaudio; Vripple = 100 mV;
30
dB
fripple = 100 Hz
AM RSSI; pin RSSI
VRSSI RSSI voltage
Vi(RF) = −20 dBµV at dummy aerial input
Vi(RF) = 14 dBµV at dummy aerial input
Vi(RF) = 34 dBµV at dummy aerial input
0.9
1.6
2.6
45
1.1
1.9
2.9
50
1.25
2.2
3.2
55
V
V
V
∆VRSSI/∆Li(RF) RSSI voltage difference to 5 µV < Vi(RF) < 50 µV
mV/dB
RF input level difference
ratio
AM IF counter
fIFc(res)
IF counter frequency
resolution
-
500
-
Hz
[1] The switched input capacitance is part of the switched RF AGC function.
[2] The input impedance of the AM LNA depends on the AGC state.
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
46 of 58
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx
xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
1 nF
100 Ω
1.8 µH
10 nF
10 nF
1 µF
32
31
30
29
28
27
26
25
24
1 nF
1
2
1 MΩ
220 nF
AM TUNER
560 µH
560 µH
15 pF
T1
3
FM TUNER
primary inductance: 71 nH
ratio prim./sec.: 2.25/5
33
pF
470 kΩ
TEST
10 nF
4
5
6
7
TEF6621T
1 nF
4.7 kΩ
PLL TUNING
SYSTEM
100 nF
10 nF
100 nF
1 µF
1 µF
8
23
22
21
20
L
STEREO DECODER
HIGH CUT
SOFT MUTE
FM NOISE BLANKER
1 µF
1 µF
9
R
OUTPUT
POWER
SUPPLY
C1
22 Ω
3.3 µH
10
11
V
P
220 nF
100 nF
100 nF
V
CC
12
13
14
15
16
19
18
17
SDA
SCL
SIGNAL
IMPROVEMENT
CONTROL
2
I C-BUS
RSSI
15 pF
X1
4 MHz
008aaa136
For list of components see Table 61 and for crystal specification see Table 62.
Fig 27. Application diagram of TEF6621T
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130 mm
110 mm
001aah342
Fig 28. Printed-circuit board layout, suggested for application (this layout has been used in the NXP GH989 reference design, 35 µm)
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx
xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
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xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
D1
BAV99
1 nF
1 MΩ
5.6 pF
82 Ω
100 nF
10 nF
10 nF
1 µF
32
31
30
29
28
1 nF
470 nH
1.8 µH
1
2
220 nF
1 MΩ
AM TUNER
560 µH
560 µH
L1
290 nH
L2
215 nH
15 pF
3
FM TUNER
22 pF
22 pF
470 kΩ
4
5
6
7
27
26
25
24
1 nF
TEST
10 nF
TEF6621T
4.7 kΩ
PLL TUNING
SYSTEM
1 µF
100 nF
10 nF
100 nF
20 pF
20 pF
1 µF
1 µF
10 kΩ
10 kΩ
L
8
23
22
21
20
STEREO DECODER
HIGH CUT
SOFT MUTE
FM NOISE BLANKER
1 µF
R
9
OUTPUT
POWER
SUPPLY
C1
22 Ω
3.3 µH
10
11
V
P
220 nF
100 nF
100 nF
V
CC
12
13
14
15
16
19
18
17
SDA
SCL
SIGNAL
IMPROVEMENT
CONTROL
2
I C-BUS
RSSI
20 pF
10 kΩ
15 pF
X1
4 MHz
008aaa137
For list of components see Table 61 and for crystal specification see Table 62.
Fig 29. Test circuit of TEF6621T
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 61. List of components for Figure 27 and Figure 29
Symbol
C1
Component
Type
Manufacturer
any
decoupling capacitor
ESD protection diode
FM RF input 1
FM RF input 2
transformer
1 µF; X7R 0805
BAV99
D1
NXP Semiconductors
Murata
L1
290 nH; LQH31HNR29K03L
215 nH; LQH31HNR21K01L
#P600ENS-10959QH
LN-G102-1413
L2
Murata
T1
TOKO
X1
crystal 4 MHz
NDK
Table 62. 4 MHz crystal specification for Figure 27 and Figure 29
Symbol
fxtal
Parameter
Conditions
Min
Typ
Max
-
Unit
MHz
pF
crystal frequency
load capacitance
shunt capacitance
motional capacitance
series resistance
fundamental frequency
-
4.000
CL
-
18
-
-
Cshunt
C1
-
7
pF
-
10
-
-
fF
Rs
-
150
+25
+5
+30
+85
Ω
∆fxtal/fxtal
relative crystal frequency
variation
at 25 °C
−25
−5
−30
−20
-
10−6
10−6
10−6
°C
caused by ageing
caused by temperature
-
-
Tamb
ambient temperature
-
TEF6621_1
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Objective data sheet
Rev. 01.04 — 7 August 2008
50 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
Table 63. DC operating points
VCC2 = 8.5 V; VCC1 = 8.5 V; Vi(RF) = 0 µV; audio output gain low; unless otherwise specified.
Symbol
Pin Unloaded DC voltage (V)
AM mode
FM mode
Min
Typ
2.85
4.1
-
Max
Min
Typ
-
Max
AMRFIN
AMRFDEC
FMIN2
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.1
3.1
FMIN1
-
-
-
GNDRF
VCC2
external GND
external GND
external 8.5
external 8.5
AMRFAGC
LOUT
-
-
-
1.8
3.8
3.8
-
-
-
-
-
-
-
-
-
3.8
3.8
ROUT
-
GNDAUD
AMIFAGC2
MPXIN
MPXOUT
RSSI
10 external GND
external GND
11
12
13
14
15
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.7
4
-
3.7
4
-
1.2
6.5
6.5
-
0.8
6.5
6.5
XTAL2
-
XTAL1
-
GNDD
17 external GND
external GND
SCL
18 external I2C-bus voltage
19 external I2C-bus voltage
external I2C-bus voltage
external I2C-bus voltage
SDA
VREF
20 3.9
4.0
6.5
4.1
7
3.9
4.0
6.5
4.1
7
VREGSUP
VCC1
21 5.6
5.6
22 external 8.5
23 external GND
external 8.5
GND
external GND
VCODEC
PLL
24
-
5.7
-
-
-
5.7
-
25 1.2
5.5
-
1.2
-
5.5
PLLREF
TEST
26
27
-
-
2.25
-
-
-
-
-
-
-
-
2.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AMSELIN1
AMSELIN2
AMIFAGC1
28 1.2
29 1.2
1.55
1.55
5.5
6.8
6.8
1.9
1.9
-
30
-
AMSELOUT1 31 6.5
AMSELOUT2 32 6.5
7.15
7.15
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
51 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
15. Package outline
SO32: plastic small outline package; 32 leads; body width 7.5 mm
SOT287-1
D
E
A
X
c
y
H
v
M
A
E
Z
17
32
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
16
1
w
M
detail X
b
p
e
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
E
L
L
Q
v
w
y
Z
θ
p
p
1
2
3
max.
0.3
0.1
2.45
2.25
0.49
0.36
0.27 20.7
0.18 20.3
7.6
7.4
10.65
10.00
1.1
0.4
1.2
1.0
0.95
0.55
mm
2.65
0.25
0.01
1.27
0.05
1.4
0.25
0.01
0.25
0.01
0.1
8o
0o
0.012 0.096
0.004 0.089
0.02 0.011 0.81
0.01 0.007 0.80
0.30
0.29
0.419
0.394
0.043 0.047
0.016 0.039
0.037
0.022
inches
0.1
0.004
0.055
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
00-08-17
03-02-19
SOT287-1
MO-119
Fig 30. Package outline SOT287-1 (SO32)
TEF6621_1
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Objective data sheet
Rev. 01.04 — 7 August 2008
52 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
16. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus SnPb soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
53 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
16.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 31) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 64 and 65
Table 64. SnPb eutectic process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
235
≥ 350
220
< 2.5
≥ 2.5
220
220
Table 65. Lead-free process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 31.
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
54 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 31. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
17. Abbreviations
Table 66. Abbreviations
Acronym
AGC
HCC
I2C-bus
IF
Description
Automatic Gain Control
High-Cut Control
Inter IC bus
Intermediate Frequency
Local Oscillator
LO
LW
Long Wave
MPX
MW
Multiplex
Medium Wave
PLL
Phase-Locked Loop
Radio Frequency
Received Signal Strength Indication
UltraSonic Noise
Voltage-Controlled Oscillator
Wideband AM
RF
RSSI
USN
VCO
WAM
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
55 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
18. Revision history
Table 67. Revision history
Document ID
Release date
yyyymmdd
Data sheet status
Change notice
Supersedes
TEF6621_1
Objective data sheet
-
-
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
56 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
19.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
I2C-bus — logo is a trademark of NXP B.V.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
TEF6621_1
© NXP B.V. 2008. All rights reserved.
Objective data sheet
Rev. 01.04 — 7 August 2008
57 of 58
TEF6621
NXP Semiconductors
Tuner on main-board IC
21. Contents
1
2
3
4
5
General description . . . . . . . . . . . . . . . . . . . . . . 1
13.1
14
Printed-circuit board. . . . . . . . . . . . . . . . . . . . 48
Test information. . . . . . . . . . . . . . . . . . . . . . . . 49
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 52
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
15
16
Soldering of SMD packages . . . . . . . . . . . . . . 53
Introduction to soldering. . . . . . . . . . . . . . . . . 53
Wave and reflow soldering . . . . . . . . . . . . . . . 53
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 53
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 54
16.1
16.2
16.3
16.4
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
17
18
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 55
Revision history . . . . . . . . . . . . . . . . . . . . . . . 56
7
Functional description . . . . . . . . . . . . . . . . . . . 5
FM tuner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
AM tuner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
PLL tuning system . . . . . . . . . . . . . . . . . . . . . . 5
FM stereo decoder . . . . . . . . . . . . . . . . . . . . . . 5
Weak signal processing and noise blanker. . . . 5
I2C-bus transceiver . . . . . . . . . . . . . . . . . . . . . . 6
7.1
7.2
7.3
7.4
7.5
7.6
19
Legal information . . . . . . . . . . . . . . . . . . . . . . 57
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 57
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 57
19.1
19.2
19.3
19.4
8
8.1
8.1.1
8.1.2
8.1.3
8.1.4
8.2
I2C-bus protocol. . . . . . . . . . . . . . . . . . . . . . . . . 6
Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Read mode: data byte STATUS . . . . . . . . . . . . 7
Read mode: data byte LEVEL . . . . . . . . . . . . . 7
Read mode: data byte USN_WAM . . . . . . . . . . 8
Read mode: data byte IFCOUNTER . . . . . . . . 8
Write mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Mode and subaddress byte for write. . . . . . . . 10
Write mode: data byte TUNER0 . . . . . . . . . . . 22
Write mode: data byte TUNER1 . . . . . . . . . . . 22
Write mode: data byte TUNER2 . . . . . . . . . . . 23
Write mode: data byte RADIO . . . . . . . . . . . . 24
Write mode: data byte SOFTMUTE0 . . . . . . . 24
Write mode: data byte SOFTMUTE1 . . . . . . . 25
Write mode: data byte SOFTMUTE2_FM. . . . 27
Write mode: data byte SOFTMUTE2_AM . . . 29
Write mode: data byte HIGHCUT0 . . . . . . . . . 29
Write mode: data byte HIGHCUT1 . . . . . . . . . 30
Write mode: data byte HIGHCUT2 . . . . . . . . . 32
Write mode: data byte STEREO0. . . . . . . . . . 34
Write mode: data byte STEREO1. . . . . . . . . . 34
Write mode: data byte STEREO2. . . . . . . . . . 36
Write mode: data byte CONTROL . . . . . . . . . 37
Write mode: data byte LEVEL_OFFSET . . . . 38
Write mode: data byte AM_LNA . . . . . . . . . . . 38
20
21
Contact information . . . . . . . . . . . . . . . . . . . . 57
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
8.2.1
8.2.2
8.2.3
8.2.4
8.2.5
8.2.6
8.2.7
8.2.8
8.2.9
8.2.10
8.2.11
8.2.12
8.2.13
8.2.14
8.2.15
8.2.16
8.2.17
8.2.18
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 39
Thermal characteristics. . . . . . . . . . . . . . . . . . 39
Static characteristics. . . . . . . . . . . . . . . . . . . . 40
Dynamic characteristics . . . . . . . . . . . . . . . . . 40
Application information. . . . . . . . . . . . . . . . . . 47
10
11
12
13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 August 2008
Document identifier: TEF6621_1
相关型号：
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