TFF1007HN/N1,115 [NXP]
TFF1007HN - Low phase noise LO generator for VSAT applications QFN 24-Pin;型号: | TFF1007HN/N1,115 |
厂家: | NXP |
描述: | TFF1007HN - Low phase noise LO generator for VSAT applications QFN 24-Pin |
文件: | 总17页 (文件大小:167K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TFF1007HN
Low phase noise LO generator for VSAT applications
Rev. 1 — 23 August 2012
Product data sheet
1. General description
The TFF1007HN is a frequency generator intended for low phase noise Local Oscillator
(LO) circuits for Ka band VSAT transmitters and transceivers. The specified phase noise
complies with IESS-308 from Intelsat.
2. Features and benefits
Phase noise compliant with IESS-308 (Intelsat)
LO generator with VCO range from 14.62 GHz to 15.00 GHz
Input signal 228.44 MHz to 234.38 MHz
Divider setting 64
Output level 4 dBm minimum
Third or fourth order PLL
Internally stabilized voltage reference for loop filter
3. Applications
VSAT up converters
Local oscillator signal generation
4. Quick reference data
Table 1.
Quick reference data
Tcase = 25 C.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC
supply voltage
supply current
3.0
-
3.3
3.6
V
mA
116 130
fo(RF)
RF output frequency
in locked state
14.62 -
15.00 GHz
n(synth) synthesizer phase noise divider value = 64 with loop bandwidth = 2 MHz;
reference phase noise = 150 dBc/Hz; at 100 kHz offset
-
109 104 dBc/Hz
RLout
output return loss
measured at demo board and de-embedded to footprint
-
10 dB
-
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
5. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
TFF1007HN
HVQFN24
plastic thermal enhanced very thin quad flat package; no leads; 24
SOT616-1
terminals; body 4 4 0.85 mm
6. Block diagram
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Fig 1. Block diagram
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
2 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
7. Functional diagram
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Fig 2. Functional diagram
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
3 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
8. Pinning information
8.1 Pinning
terminal 1
index area
1
2
3
4
5
6
18
17
16
15
14
13
VREGVCO
CPOUT
VTUNE
NSL0
V
CC(BUF)
GND1(BUF)
n.c.
n.c.
NSL1
GND(DIV)
NSL2
V
CC(DIV)
001aal726
Transparent top view
Fig 3. Pin configuration for HVQFN24
8.2 Pin description
Table 3.
Pin description
Pin Description
Symbol
VREGVCO
CPOUT
VTUNE
NSL0
1
2
3
4
5
6
7
Regulated output voltage for VCO loop filter. Connect loop filter to this pin.
Charge pump output.
Tuning voltage for VCO.
Divider setting, LSB. Leave open for “1”, connect to GND for “0”. See Table 6.
Divider setting. Leave open for “1”, connect to GND for “0”. See Table 6.
Divider setting, MSB. Leave open for “1”, connect to GND for “0”. See Table 6.
Lock detect. Lock = 2.5 V; out of lock = 0 V. See Table 4.
Ground for REF input. Connect this pin to the exposed diepad landing.
Reference signal, non-inverting input. Couple this AC to the source.
NSL1
NSL2
LCKDET
GND1(REF) 8
IN(REF)_P
9
IN(REF)_N 10 Reference signal, inverting input. Couple this AC to the source.
GND2(REF) 11 Ground for REF input. Connect this pin to the exposed diepad landing.
VCC(REF)
12 Supply of the internal regulated voltages. Decouple this pin against
GND2(REF) (pin 11).
VCC(DIV)
13 Supply of the divider and PFD/CP. Decouple this pin against GND(DIV)
(pin 14).
GND(DIV)
n.c.
14 Ground of the divider. Connect this pin to the exposed diepad landing.
15 not connected
16 not connected
n.c.
GND1(BUF) 17 Ground for RF output. Connect this pin to the exposed diepad landing.
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
4 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Table 3.
Pin description …continued
Symbol
Pin Description
VCC(BUF)
18 Supply voltage for the RF output buffer. Decouple this pin against GND2(BUF)
(pin 19).
GND2(BUF) 19 Ground for RF output. Connect this pin to the exposed diepad landing.
BUF1_N
BUF2_N
BUF1_P
BUF2_P
20 RF output.
21 RF output.
22 RF output.
23 RF output.
GND3(BUF) 24 Ground for RF output. Connect this pin to the exposed diepad landing.
9. Functional description
The TFF1007HN consists of the following blocks:
• PLL
• Output buffer
• Lock detector
• Reference input
• Divider settings
The functionality of the blocks will be discussed below.
9.1 PLL
The PLL is formed by the VCO, DIVIDER (possible settings: 16, 32, 64, 128 and 256
(see Table 6)) and a PFD/CP. The tune voltage is referred to the band gap regulated
voltage: VREGVCO (pin 1).
The loop filter can be set to type 2 or type 3. If a type 2 filter is used, the pins
CPOUT (pin 2) and VTUNE (pin 3) must be interconnected. No capacitor is placed
internally between CPOUT (pin 2) and VREGVCO (pin 1), and a 5 pF capacitor is placed
between VTUNE (pin 3) and VREGVCO (pin 1). See Figure 4 and Figure 5. Type 3 filter
has an extra pole formed by R2, leading to better spurious suppression.
The VCO input voltage range is between 0.1 VO(reg)VCO and 0.9 VO(reg)VCO
.
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
5 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
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Minimal integrated phase noise at divider value = 64
Wide loop bandwidth
Fig 4. Type 2 loop filter
Fig 5. Type 3 loop filter
9.2 Output buffer
The output consists of a differential pair with 50 collector resistors. If only one output is
used, terminate the non used output with the same impedance as the load (see Figure 8)
9.3 Lock detector
The lock detector is the output of a window detector. The window detector compares the
output voltage over the charge pump. This voltage is identical to VTUNE (pin 3) when a
type 2 loop filter is used (see Figure 4). In case of a type 3 loop filter this voltage is filtered
by R2/C3 (see Figure 5). Due to this filtering the attack and decay time will decrease.
The lower window detector threshold voltage is 7 % of the output voltage on pin
VREGVCO (pin 1), the upper window detector threshold voltage is 93 % of the output
voltage on pin VREGVCO (pin 1). The hysteresis is 0.1 V. The output is 2.5 V CMOS
compliant. The values are shown in Table 4. The timing diagram is shown in Figure 6.
At start-up the LCKDET (pin 7) will be low until the circuit has acquired lock.
Table 4.
Logical value and physical value for lock detect (LCKDET)
Logical value
Physical value
Lock detect state
out of lock
lock
0
1
0 V
2.5 V
LCKDET (pin 7) has a pull-down resistor of 100 k to GND1(REF) (pin 8).
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
6 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
IN(REF)_P/N(t)
t
upper window detector threshold
hysteresis voltage (0.1 V)
(93% of V
O(reg)VCO
)
VTUNE(t)
hysteresis voltage (0.1 V)
low window detector threshold
(7% of V
)
O(reg)VCO
t
t
IN LOCK
2.2 V
LCKDET(t)
0.4 V
OUT OF LOCK (0 V)
timeline section
1
2
3
4
5
6
(1)
(1)
attack time
decay time
value determined Drift to maximum
undetermined
undetermined
voltage is forced
value is determined by
closed loop operation
PLL
by closed loop
opertation PLL
voltage = lowest behavior around behavior around by loop to closed
frequency of
VCO
VTUNE
maximum
voltage
maximum
voltage
loop value of
PLL
actual PLL status
PLL is in lock
PLL is out of lock PLL is out of lock PLL is out of lock
PLL is in lock
PLL is in lock
LCKDET > 2.2 V
LCKDET
remains > 2.2 V
because loop
filter is still
window detector LCKDET < 0.4 V window detector
LCKDET > 2.2 V
detects that
VTUNE > upper
window detector
threshold.
detects that
VTUNE < upper
window detector
threshold − 0.1 V.
LCKDET changes
from < 0.4 V to
> 2.2 V during the
decay time
remarks
charged
LCKDET changes
from > 2.2 V to
< 0.4 V during the
attack time
001aal986
(1) The attack time and decay time are typically 10 s and are mainly depending on the drift of the VCO tuning voltage.
Fig 6. Timing diagram lock detector
9.4 Reference input (IN(REF)_P, IN(REF)_N)
The reference input is a differential pair and is internally biased. The input is high ohmic.
The input signal must be AC coupled. If used in a single ended mode, the not used input
must be terminated with the same impedance as the driving source.
An example of the differential source and two single ended loads are shown in Figure 7.
An example of a single ended application is shown in Figure 8.
Note that the phase noise of the output signal is also determined by the phase noise of the
reference signal. The reference frequency range is equal to the
output frequency / division value. Note that the output frequency is guaranteed from
14.62 GHz to 15.00 GHz.
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
7 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
9.5 Divider setting (NSL2, NSL1, NSL0)
The divider is optimized for divider value 64. The other values (16, 32, 128 and 256) can
be used, but performance for these values is not included in this data sheet (see Table 6).
The logic levels for NSL0 (pin 4), NSL1 (pin 5) and NSL2 (pin 6) are given in Table 5.
The pins have a pull-up resistor of 100 k to VCC(DIV) (pin 13).
The device is only guaranteed when NSL2, NSL1 and NSL0 are predefined at start-up (no
change of divider value is allowed during operation).
Table 5.
Logical and physical value for divider setting (NSL2, NSL1, NSL0)
Logical value
Physical value
GND
0
1
open or VCC
The truth table is shown in Table 6.
Table 6.
Divider setting as function of NSL2, NSL1 and NSL0
Setting number NSL2
NSL1
NSL0
Divider value
16 [1]
32 [1]
0
1
2
3
4
5
6
7
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
64
128 [1]
256 [1]
[2]
[2]
[2]
[1] Test mode.
[2] Test mode, divider output will be disabled.
10. Limiting values
Table 7.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VI
input voltage
on pin NSL0
0.5 +5
0.5 +5
0.5 +5
0.5 +5
0.5 +5
0.5 +5
0.5 +5
0.5 +5
V
V
V
V
V
V
V
V
on pin NSL1
on pin NSL2
on pin IN(REF)_P
on pin IN(REF)_N
on pin VCC(REF)
on pin VCC(DIV)
on pin VCC(BUF)
on pin IN(REF)_P
on pin IN(REF)_N
Pi
Tj
input power
4
4
+10 dBm
+10 dBm
junction temperature
40 +125 C
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
8 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Table 7.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
Tstg
storage temperature
40 +125 C
VESD
electrostatic discharge voltage Human Body Model (HBM);
According JEDEC standard
-
2.5
kV
22-A114E
Charged Device Model (CDM);
According to JEDEC standard
22-C101B
-
1
kV
11. Recommended operating conditions
Table 8.
Operating conditions
NSL0 (pin 4), NSL1 (pin 5) and NSL2 (Pin 6) not changed during operation.
Symbol
Tamb
Z0
Parameter
Conditions
Min
Typ Max
Unit
ambient temperature
characteristic impedance
reference phase noise
reference input frequency
reference input power
40
+25 +85
C
-
50
-
-
[1]
n(ref)
fi(ref)
divider value = 64
-
150
234.38
+4
dBc/Hz
MHz
fi(ref) = fo(RF) / divider value
228.44
-
Pi(ref)
4
-
dBm
[1] Required reference phase noise is set 10 dB below equivalent input phase noise.
12. Thermal characteristics
Table 9.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-sp)
thermal resistance from junction to solder point
25
K/W
13. Characteristics
Table 10. Characteristics
3.0 < VCC < 3.6 V; Operating conditions of Table 8 apply.
Symbol
VCC
Parameter
Conditions
Min
Typ Max Unit
supply voltage
supply current
3.0
-
3.3
3.6
V
ICC
116 130
mA
PLL
fo(RF)
RF output frequency
In locked state
14.62
-
15.00 GHz
VO(reg)VCO VCO regulator output voltage
2.5
-
2.7
2
2.9
-
V
Icp
charge pump current
VCO steepness
mA
KO
-
0.75
1.5
-
GHz/V
IcpKO
charge pump current and VCO
steepness product
0.8
2.4
mA·GHz/V
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
9 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Table 10. Characteristics …continued
3.0 < VCC < 3.6 V; Operating conditions of Table 8 apply.
Symbol
n(VCO)
n(synth)
Parameter
Conditions
Min
Typ Max Unit
VCO phase noise
synthesizer phase noise
at 1MHz offset
117 109 101 dBc/Hz
divider value = 64 with
loop bandwidth = 2 MHz;
reference phase noise = 150 dBc/Hz
at 30 kHz offset
at 100 kHz offset
at 1 MHz offset
-
-
-
108 103 dBc/Hz
109 104 dBc/Hz
109 104 dBc/Hz
Output buffer
[1]
[2]
Po
output power
measured single ended
4
2
0
-
dBm
dB
RLout
output return loss
measured at demo board and
de-embedded to footprint
-
10
sup(sp)
spurious suppression
within 1 MHz
-
-
-
-
60
60
dBc
dBc
sup(sp)ref reference spurious
measured at divider value = 64
suppression
H(LO)
LO harmonic rejection
-
10
-
dBc
Lock detector
VOL
VOH
Rpd
LOW-level output voltage
IO = 100 A
-
-
-
0.4
-
V
HIGH-level output voltage
pull-down resistance
IO = 100 A
2.2
70
V
100 130
k
Divider setting (NSL0, NSL1, NSL2)
Rpu
VIL
VIH
pull-up resistance
70
-
100 130
k
V
LOW-level input voltage
HIGH-level input voltage
-
-
0.8
-
2.0
V
[1] Output stage is a differential pair with 50 collector impedances.
Output power is measured per output pin for the fundamental tone only.
Output is DC coupled and is AC coupled in on-board.
[2] Loop filter components dimensioned to achieve a 1 dB PLL loop bandwidth (BPLL(loop)) of 2 MHz under worst case conditions (minimum
KO gain, minimum Icp and maximum value of loop filter components).
Loop filter components spread of 10 % taken into account.
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
10 of 17
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ꢉꢅ1ꢋꢂꢉ2ꢂꢜꢒꢜꢂꢎꢂ0ꢂꢀ
ꢝꢑ
ꢓꢌꢁꢂꢄ
ꢔꢕꢖꢑ
)
ꢔꢕꢖꢀ
ꢌ
ꢔꢕꢖꢁ
ꢗ
ꢎꢚꢙꢔꢛ
ꢜ
ꢏꢘꢐꢙꢚ
ꢑ
ꢎꢝꢛ ꢎꢏꢐ
ꢀ
ꢀꢁꢁꢂꢃꢄ
ꢅꢆꢇꢇꢂꢆꢅ
ꢀꢁꢁꢂꢃꢄ
ꢅꢆꢇꢇꢂꢆꢅ
ꢀꢁꢁꢂꢃꢄ
ꢅꢆꢇꢇꢂꢆꢅ
ꢏꢜ
.
ꢎ
ꢏꢏ!"#ꢎ$
!ꢜꢒꢜꢂꢎ$
ꢇꢉ'ꢃ*ꢂꢑꢒꢌꢂꢎ
ꢌꢂꢅꢍ
ꢐꢙꢚ3ꢐꢍ3ꢖꢐꢏ+
ꢘꢝꢐꢏꢛꢕꢕ#ꢔ
%ꢖꢐꢏ+
ꢋꢉꢂꢇꢉ'ꢃ*ꢂꢁꢂꢎ
ꢖꢏ+"ꢛꢚ
ꢓ
ꢑꢗ ꢔ"ꢜ!%ꢙꢍ$
ꢑꢜ %ꢙꢍꢑ&ꢘ
ꢑꢑ %ꢙꢍꢀ&ꢘ
(#ꢔ"ꢐ(
ꢑꢒꢓꢂꢎ
"ꢛꢚꢛꢏꢚꢐꢝ
ꢀꢁꢁꢂꢃꢄ
ꢅꢆꢇꢇꢂꢈꢉꢊꢋ
ꢔ"ꢀ!ꢝꢛꢍ$
,
ꢎ
ꢏꢏ!%ꢙꢍ$
5
ꢁ
ꢂ0ꢂꢌꢁꢂꢄ
ꢀꢂꢅꢍ
ꢝ
ꢝ
%ꢙꢍ&ꢔ
ꢌꢁꢂꢄ
%ꢙꢍ&ꢘ
ꢌꢁꢂꢄ
ꢀꢁꢂꢋꢍ
ꢎꢏꢐ
#ꢔ!ꢝꢛꢍ$&ꢘ
-
ꢌꢁꢂꢄ
ꢏꢘꢐꢙꢚ
ꢎꢚꢙꢔꢛ
ꢌꢁꢂꢄ
ꢌꢁꢂꢄ
5
ꢁ!ꢈ.6$
ꢂ0ꢂꢀꢁꢁꢂꢄ
ꢘꢍ" ꢏꢘ
"ꢏꢂ4ꢇꢉ'ꢃ
ꢌꢁꢂꢄ
ꢖꢐ/"
ꢀꢁꢁꢂꢄ
"ꢏꢂ4ꢇꢉ'ꢃ
ꢀꢁꢂꢋꢍ
"#ꢎ#"ꢛꢝ
#ꢔ!ꢝꢛꢍ$&ꢔ
ꢀꢁ
ꢀꢀ
ꢀꢑ
ꢑꢀ %ꢙꢍꢑ&ꢔ
ꢑꢁ %ꢙꢍꢀ&ꢔ
ꢔꢕꢖꢁ
ꢔꢕꢖꢀ
ꢔꢕꢖꢑ
ꢝꢛꢍꢛꢝꢛꢔꢏꢛ
ꢕꢐꢙꢝꢏꢛ
5
ꢁ
ꢂ0ꢂꢌꢁꢂꢄ
ꢀꢂꢅꢍ
ꢔ"ꢑ!ꢝꢛꢍ$
ꢌꢁꢂꢄ
ꢌꢁꢂꢄ
ꢖꢐ/"
ꢎ
ꢏꢏ!ꢝꢛꢍ$
ꢀ- ꢔ"ꢑ!%ꢙꢍ$
ꢜꢒꢜꢂꢎ
ꢀꢜ
ꢀꢗ
ꢀꢌ
ꢀ)
ꢋꢒ'ꢒ
ꢀꢓ
ꢀ,
ꢎ
ꢔ"!"#ꢎ$ ꢋꢒ'ꢒ
ꢔ"ꢀ!%ꢙꢍ$ ꢎ
ꢏꢏ!%ꢙꢍ$
ꢏꢏ!"#ꢎ$
ꢀꢀꢀꢁꢂꢂꢃꢄꢂꢄ
Fig 7. Application diagram with differential source for IN(REF) and both outputs driving a load, loop filter is type 3
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ꢏꢑ
ꢌꢂꢅꢍ
ꢏꢀ
ꢝꢀ
ꢓꢌꢁꢂꢄ
,ꢑꢁꢂꢅꢍ
ꢀꢂꢋꢍ
ꢔ"ꢂ0ꢂꢁ
ꢉꢅ1ꢋꢂꢉ2ꢂꢜꢒꢜꢂꢎꢂ0ꢂꢀ
ꢝꢑ
ꢓꢌꢁꢂꢄ
ꢔꢕꢖꢑ
)
ꢔꢕꢖꢀ
ꢌ
ꢔꢕꢖꢁ
ꢗ
ꢎꢚꢙꢔꢛ
ꢜ
ꢏꢘꢐꢙꢚ
ꢑ
ꢎꢝꢛ ꢎꢏꢐ
ꢀ
ꢀꢁꢁꢂꢃꢄ
ꢅꢆꢇꢇꢂꢆꢅ
ꢀꢁꢁꢂꢃꢄ
ꢅꢆꢇꢇꢂꢆꢅ
ꢀꢁꢁꢂꢃꢄ
ꢅꢆꢇꢇꢂꢆꢅ
ꢏꢜ
.
ꢎ
ꢏꢏ!"#ꢎ$
!ꢜꢒꢜꢂꢎ$
ꢇꢉ'ꢃ*ꢂꢑꢒꢌꢂꢎ
ꢌꢂꢅꢍ
ꢐꢙꢚ3ꢐꢍ3ꢖꢐꢏ+
ꢘꢝꢐꢏꢛꢕꢕ#ꢔ
%ꢖꢐꢏ+
ꢋꢉꢂꢇꢉ'ꢃ*ꢂꢁꢂꢎ
ꢖꢏ+"ꢛꢚ
ꢓ
ꢑꢗ ꢔ"ꢜ!%ꢙꢍ$
ꢑꢜ %ꢙꢍꢑ&ꢘ
ꢑꢑ %ꢙꢍꢀ&ꢘ
(#ꢔ"ꢐ(
"ꢛꢚꢛꢏꢚꢐꢝ
ꢑꢒꢓꢂꢎ
ꢀꢁꢁꢂꢃꢄ
ꢅꢆꢇꢇꢂꢈꢉꢊꢋ
ꢔ"ꢀ!ꢝꢛꢍ$
,
ꢎ
ꢏꢏ!%ꢙꢍ$
5
ꢁ
ꢂ0ꢂꢌꢁꢂꢄ
ꢀꢂꢅꢍ
ꢝ
ꢝ
%ꢙꢍ&ꢔ
ꢌꢁꢂꢄ
%ꢙꢍ&ꢘ
ꢌꢁꢂꢄ
5
ꢁ
ꢂ0ꢂꢌꢁꢂꢄ
ꢀꢁꢂꢋꢍ
ꢎꢏꢐ
ꢌꢁꢂꢄ
#ꢔ!ꢝꢛꢍ$&ꢘ
-
ꢌꢁꢂꢄ
ꢏꢘꢐꢙꢚ
ꢎꢚꢙꢔꢛ
ꢘꢍ" ꢏꢘ
"ꢏꢂ4ꢇꢉ'ꢃ
ꢌꢁꢂꢄ
ꢖꢐ/"
ꢌꢀꢂꢄ
"ꢏꢂ4ꢇꢉ'ꢃ
"#ꢎ#"ꢛꢝ
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#ꢔ!ꢝꢛꢍ$&ꢔ
ꢀꢁ
ꢀꢀ
ꢀꢑ
ꢑꢀ %ꢙꢍꢑ&ꢔ
ꢑꢁ %ꢙꢍꢀ&ꢔ
ꢝꢛꢍꢛꢝꢛꢔꢏꢛ
ꢕꢐꢙꢝꢏꢛ
ꢔꢕꢖꢁ
ꢔꢕꢖꢀ
ꢔꢕꢖꢑ
ꢋꢉ7ꢂꢆ81ꢈꢂ.ꢋꢅꢆ7
7129.ꢋ:71ꢈꢂꢊ.7;ꢂ
8:91ꢂ.9ꢅ1ꢈ:ꢋ'1
ꢀꢂꢅꢍ
ꢑꢗꢂꢄ
ꢋꢉ7ꢂꢆ81ꢈꢂꢉꢆ7ꢅꢆ7
7129.ꢋ:71ꢈꢂꢊ.7;ꢂ
8:91ꢂ.9ꢅ1ꢈ:ꢋ'1
ꢔ"ꢑ!ꢝꢛꢍ$
ꢌꢀꢂꢄ
ꢎ
ꢏꢏ!ꢝꢛꢍ$
ꢀ- ꢔ"ꢑ!%ꢙꢍ$
ꢜꢒꢜꢂꢎ
ꢀꢜ
ꢀꢗ
ꢀꢌ
ꢀ)
ꢋꢒ'ꢒ
ꢀꢓ
ꢀ,
ꢎ
ꢔ"!"#ꢎ$ ꢋꢒ'ꢒ
ꢔ"ꢀ!%ꢙꢍ$ ꢎ
ꢏꢏ!%ꢙꢍ$
ꢏꢏ!"#ꢎ$
ꢀꢀꢀꢁꢂꢂꢃꢄꢂꢇ
Fig 8. Application diagram with single ended source for IN(REF) and single ended load, loop filter is type 3
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
15. Package outline
HVQFN24: plastic thermal enhanced very thin quad flat package; no leads;
24 terminals; body 4 x 4 x 0.85 mm
SOT616-1
B
A
D
terminal 1
index area
A
A
1
E
c
detail X
e
1
C
1/2 e
y
y
C
1
e
v
M
M
C
C
A
B
b
7
12
w
L
13
6
e
e
E
h
2
1/2 e
1
18
terminal 1
index area
24
19
X
D
h
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
max.
(1)
(1)
UNIT
mm
A
b
c
E
e
e
e
y
D
D
E
L
v
w
y
1
1
h
1
2
h
0.05 0.30
0.00 0.18
4.1
3.9
2.25
1.95
4.1
3.9
2.25
1.95
0.5
0.3
0.05
0.1
1
0.2
0.5
2.5
2.5
0.1 0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
01-08-08
02-10-22
SOT616-1
- - -
MO-220
- - -
Fig 9. Package outline SOT616-1 (HVQFN24)
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
13 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
16. Abbreviations
Table 11. Abbreviations
Acronym
CMOS
CP
Description
Complementary Metal Oxide Semiconductor
Charge Pump
Ka band
LSB
K-above band
Least Significant Bit
MSB
Most Significant Bit
PFD
Phase Frequency Detector
Phase-Locked Loop
PLL
VCO
Voltage Controlled Oscillator
Very Small Aperture Terminal
VSAT
17. Revision history
Table 12. Revision history
Document ID
Release date
20120823
Data sheet status
Change notice
Supersedes
TFF1007HN v.1
Product data sheet
-
-
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
14 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
18.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
15 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
TFF1007HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 August 2012
16 of 17
TFF1007HN
NXP Semiconductors
Low phase noise LO generator for VSAT applications
20. Contents
1
2
3
4
5
6
7
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
8
8.1
8.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
9
Functional description . . . . . . . . . . . . . . . . . . . 5
PLL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Output buffer. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Lock detector . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Reference input (IN(REF)_P, IN(REF)_N) . . . . 7
Divider setting (NSL2, NSL1, NSL0). . . . . . . . . 8
9.1
9.2
9.3
9.4
9.5
10
11
12
13
14
15
16
17
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8
Recommended operating conditions. . . . . . . . 9
Thermal characteristics . . . . . . . . . . . . . . . . . . 9
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9
Application information. . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
18
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
18.1
18.2
18.3
18.4
19
20
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 August 2012
Document identifier: TFF1007HN
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