TK8A60W [NXP]

MOSFETs Silicon N-Channel MOS (DTMOS); MOSFET的硅N沟道MOS ( DTMOS )
TK8A60W
型号: TK8A60W
厂家: NXP    NXP
描述:

MOSFETs Silicon N-Channel MOS (DTMOS)
MOSFET的硅N沟道MOS ( DTMOS )

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中文:  中文翻译
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TK8A60W  
MOSFETs Silicon N-Channel MOS (DTMOS)  
TK8A60W  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.)  
by used to Super Junction Structure : DTMOS  
(2) Easy to control Gate switching  
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain  
3: Source  
TO-220SIS  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
600  
±30  
8.0  
32  
(Note 1)  
(Note 1)  
A
IDP  
(Tc = 25)  
PD  
30  
W
mJ  
A
Single-pulse avalanche energy  
Avalanche current  
(Note 2)  
EAS  
105  
2.0  
8.0  
32  
IAR  
Reverse drain current (DC)  
Reverse drain current (pulsed)  
Channel temperature  
(Note 1)  
(Note 1)  
IDR  
IDRP  
Tch  
150  
Storage temperature  
Tstg  
-55 to 150  
2000  
Isolation voltage (RMS)  
Mounting torque  
(t = 1.0 s)  
VISO(RMS)  
TOR  
V
0.6  
Nm  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2012-10-24  
Rev.1.0  
1
TK8A60W  
5. Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Channel-to-case thermal resistance  
Channel-to-ambient thermal resistance  
Rth(ch-c)  
Rth(ch-a)  
4.17  
62.5  
/W  
Note 1: Ensure that the channel temperature does not exceed 150.  
Note 2: VDD = 90 V, Tch = 25(initial), L = 46.0 mH, RG = 25 , IAR = 2.0 A  
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.  
2012-10-24  
Rev.1.0  
2
TK8A60W  
6. Electrical Characteristics  
6.1. Static Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
IGSS  
IDSS  
VGS = ±30 V, VDS = 0 V  
±1  
10  
µA  
Drain cut-off current  
VDS = 600 V, VGS = 0 V  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS ID = 10 mA, VGS = 0 V  
600  
2.7  
V
Vth  
VDS = 10 V, ID = 0.4 mA  
VGS = 10 V, ID = 4.0 A  
3.7  
0.5  
Drain-source on-resistance  
RDS(ON)  
0.42  
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Input capacitance  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
pF  
Ciss  
Crss  
Coss  
Co(er)  
rg  
VDS = 300 V, VGS = 0 V, f = 1 MHz  
50  
570  
2.5  
16  
Reverse transfer capacitance  
Output capacitance  
Effective output capacitance  
Gate resistance  
VDS = 0 to 400 V, VGS = 0 V  
VDS = OPEN, f = 1 MHz  
See Figure 6.2.1  
26  
7.5  
20  
Switching time (rise time)  
Switching time (turn-on time)  
Switching time (fall time)  
Switching time (turn-off time)  
MOSFET dv/dt ruggedness  
tr  
ns  
ton  
40  
tf  
5.5  
70  
toff  
dv/dt  
VDD = 0 to 400 V, ID = 4.0 A  
V/ns  
Fig. 6.2.1 Switching Time Test Circuit  
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Qg  
Test Condition  
Min  
Typ.  
18.5  
Max  
Unit  
nC  
Total gate charge (gate-source plus  
gate-drain)  
VDD 400 V, VGS = 10 V, ID = 8.0 A  
Gate-source charge 1  
Gate-drain charge  
Qgs1  
Qgd  
3.5  
9.0  
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Diode forward voltage  
Symbol  
Test Condition  
IDR = 8.0 A, VGS = 0 V  
Min  
Typ.  
Max  
Unit  
VDSF  
trr  
15  
230  
1.9  
17  
-1.7  
V
ns  
Reverse recovery time  
IDR = 4.0 A, VGS = 0 V  
-dIDR/dt = 100 A/µs  
Reverse recovery charge  
Peak reverse recovery current  
Diode dv/dt ruggedness  
Qrr  
µC  
A
Irr  
dv/dt  
IDR = 4.0 A, VGS = 0 V, VDD = 400 V  
V/ns  
2012-10-24  
Rev.1.0  
3
TK8A60W  
7. Marking (Note)  
Fig. 7.1 Marking  
Note: A line under a Lot No. identifies the indication of product Labels.  
Not underlined: [[Pb]]/INCLUDES > MCV  
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS  
compatibility of Product.  
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on  
the restriction of the use of certain hazardous substances in electrical and electronic equipment.  
2012-10-24  
Rev.1.0  
4
TK8A60W  
8. Characteristics Curves (Note)  
Fig. 8.1 ID - VDS  
Fig. 8.3 ID - VGS  
Fig. 8.5 VDSS - Ta  
Fig. 8.2 ID - VDS  
Fig. 8.4 VDS - VGS  
Fig. 8.6 RDS(ON) - ID  
2012-10-24  
Rev.1.0  
5
TK8A60W  
Fig. 8.7 RDS(ON) - Ta  
Fig. 8.8 IDR - VDS  
Fig. 8.9 C - VDS  
Fig. 8.10 EOSS - VDS  
Fig. 8.11 Vth - Ta  
Fig. 8.12 Dynamic Input/Output Characteristics  
2012-10-24  
Rev.1.0  
6
TK8A60W  
Fig. 8.13 rth - tw  
(Guaranteed Maximum)  
Fig. 8.14 EAS - Tch  
Fig. 8.15 PD - Tc  
(Guaranteed Maximum)  
(Guaranteed Maximum)  
Fig. 8.16 Test Circuit/Waveform  
2012-10-24  
Rev.1.0  
7
TK8A60W  
Fig. 8.17 Safe Operating Area  
(Guaranteed Maximum)  
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
2012-10-24  
Rev.1.0  
8
TK8A60W  
Package Dimensions  
Unit: mm  
Weight: 1.7 g (typ.)  
Package Name(s)  
JEITA: SC-67  
TOSHIBA: 2-10U1S  
Nickname: TO-220SIS  
2012-10-24  
Rev.1.0  
9
TK8A60W  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively "Product") without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's  
written permission, reproduction is permissible only if reproduction is without alteration/omission.  
ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsible  
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which  
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage  
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate  
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA  
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the  
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application  
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,  
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating  
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample  
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.  
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.  
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY  
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  
("UNINTENDEDUSE").Exceptforspecificapplicationsasexpresslystatedinthisdocument, UnintendedUseincludes, withoutlimitation,  
equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles,  
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applicable laws or regulations.  
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ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
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INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING  
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for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products  
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and  
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration  
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all  
applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING  
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  
2012-10-24  
Rev.1.0  
10  

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