TZA1015T [NXP]
Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS; 数据放大器和激光器的电源电路用于CD和只读光学系统HDALAS
| 型号： | TZA1015T |
| 厂家： | 
NXP |
| 描述： | Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS |
| 文件： | 总20页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TZA1015
Data amplifier and laser supply
circuit for CD and read-only optical
systems (HDALAS)
Product specification
1999 Aug 19
Supersedes data of 1998 Sep 09
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
FEATURES
GENERAL DESCRIPTION
• Six input buffer amplifiers with low-pass filtering and
virtually no offset
The TZA1015 is a data amplifier and laser supply circuit for
3-beam pick-up detectors found in a wide range of CD and
read-only optical systems.
• Universal photodiode IC interface using internal
The device contains 6 transimpedance amplifiers to
amplify and filter the focus and radial photo diode voltage
input signals. The preamplifier forms a versatile,
programmable interface from voltage output CD
mechanisms to the Philips’ digital signal processor family.
conversion resistors
• RF data amplifier with wide bandwidth designed for data
rates up to a maximum of 30×
• Programmable RF gain for CD-A/V, CD-R, CD-R/W and
CD-ROM applications
The dynamic range of this preamplifier/processor
combination can be optimized for the LF servo and RF
data paths. The servo channel gain is set by the ADC
range of the processor. The RF data channel can be
programmed in the TZA1015 preamplifier.
• Programmable RF bandwidth for optimal playability
• Radial error signal for fast track counting
• Programmable RF/Fast Track Count (FTC) gain for
optimal dynamic range
The programmable RF bandwidth allows this device to be
used in CD-A/V applications or CD-R, CD-R/W and
CD-ROM applications with a data rate up to a maximum of
30×. The RF and LF gain can be adapted for CD-A/V,
CD-R and CD-ROM discs or CD-R/W discs by means of a
gain switch. In addition to this gain switch the RF gain is
programmable to guarantee optimal playability. In order to
enable minimal access time the TZA1015 generates a
Fast Track Count signal which enables the decoder
(ACE or MACE) to count the number of tracks during a
track jump.
• Fully automatic laser control including stabilization and
on/off switch plus a separate supply for power efficiency
• Automatic monitor diode polarity selection
• Adjustable laser bandwidth and laser switch-on current
slope using external capacitor
• Protection circuit to prevent laser damage due to supply
voltage dip
• Optimized interconnection between data amplifier and
Philips’ digital signal processor family (CD7, ACE and
MACE)
The device can accommodate astigmatic, single Foucault
and double Foucault detectors and can be used with all
laser and N- or P-sub monitor diodes. The Automatic Laser
Power Control (ALPC) circuit will maintain control over the
laser diode current. With an on-chip reference voltage
generator, a constant and stabilized output power is
ensured independent of ageing. A separate power supply
connection allows the internal power dissipation to be
reduced by connecting a low voltage supply.
• Wide supply voltage range
• Wide temperature range
• Low power consumption.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic small outline package; 28 leads; body width 7.5 mm
VERSION
TZA1015T
SO28
SOT136-1
1999 Aug 19
2
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
QUICK REFERENCE DATA
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD(RF,LF)
VDD(L)
supply voltage
4.5
5.0
5.5
V
laser supply voltage
3
−
5.5
V
LF amplifiers
IOS
channel matching
−
−
1
%FS
kHz
B(−3dB)
−3 dB bandwidth
65
90
115
RF amplifier
B(−3dB)
−3 dB bandwidth
programmable;
GARF = open-circuit
−
−
−
−
10
20
50
−
−
MHz
MHz
MHz
ns
−
−
td(f)(RF)
RF flatness delay
0.4
Laser supply
Io(LASER)(min) minimum laser output current VDD(L) = 3 V
−
−
100
mA
Vi(mon)
monitor input voltage
N-type monitor
−
−
0.150
−
−
V
V
P-type monitor
V
DD(RF,LF) − 0.150
Temperature range
Toper
Tstg
operating temperature
storage temperature
0
−
−
85
°C
°C
−65
+150
1999 Aug 19
3
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
BLOCK DIAGRAM
6
22
21
20
19
18
17
15
D1
+
+
O1
O2
O3
O4
O5
O6
FTC
−
7
D2
+
+
−
8
D3
+
+
−
9
D4
+
+
−
10
S5
+
+
−
11
S6
+
+
−
−
+
25
26
RFP
RFN
28
GARF
V
27
DD(LF)
GSE
1
RFBWS
14
13
V
V
COM
ref
TZA1015
V/I
(1)
5
2
4
V
V/I
MON
GAP
LD
V/I
CFIL
23
12
3
24
GND
16
PWRON
MGK356
V
V
V
DD(L)
DD(RF)
DD(LF)
(1) Bandgap reference voltage.
Fig.1 Block diagram.
4
1999 Aug 19
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
PINNING
SYMBOL PIN
DESCRIPTION
RFBWS
LD
1
2
3
4
5
6
7
8
9
RF amplifier bandwidth select
current output to the laser diode
laser supply voltage
VDD(L)
CFIL
MON
D1
external filter capacitor
laser monitor diode input
input photo diode amplifier 1 (central)
input photo diode amplifier 2 (central)
input photo diode amplifier 3 (central)
input photo diode amplifier 4 (central)
handbook, halfpage
RFBWS
GARF
28
D2
1
2
D3
LD
GSE
RFN
RFP
GND
V
27
26
25
24
23
22
D4
V
3
DD(L)
S5
10 input photo diode amplifier 5
(satellite)
CFIL
MON
D1
4
5
S6
11 input photo diode amplifier 6
(satellite)
6
DD(RF)
VDD(LF)
12 LF diode and FTC amplifier supply
voltage
D2
O1
7
TZA1015
D3
8
21 O2
VCOM
Vref
13 common mode DC reference input
D4
O3
9
20
19
18
17
16
14 DC reference voltage for biasing of
Opto Electronic IC (OEIC)
S5
O4
10
11
12
13
14
FTC
15 fast track count amplifier output
S6
O5
PWRON
16 power on/off switch (Vref bias
generator always active)
V
O6
DD(LF)
V
PWRON
COM
O6
17 output photo diode amplifier 6
18 output photo diode amplifier 5
19 output photo diode amplifier 4
20 output photo diode amplifier 3
21 output photo diode amplifier 2
22 output photo diode amplifier 1
23 RF amplifier supply voltage
24 ground
V
15 FTC
ref
O5
MGK355
O4
O3
O2
O1
VDD(RF)
GND
RFP
RFN
GSE
25 positive output RF data amplifier
26 negative output RF data amplifier
27 gain select for CD, CD-R, CD-R/W;
RF and FTC amplifiers
Fig.2 Pin configuration.
GARF
28 gain adjust for RF and FTC amplifiers
1999 Aug 19
5
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
−0.5
MAX.
UNIT
VDD(RF,LF)
VI(n)
+5.5
V
input voltage for all pins
source current
−0.5
VDD(RF,LF) + 0.5 V
Isource
pin FTC
−
4
mA
pin RFP
−
2
mA
mA
°C
pin RFN
−
2
Tamb
Pmax
operating ambient temperature
maximum power dissipation
−40
−
+100
700
note 1
mW
Note
1. Based on standard measurement for determining thermal resistance of the package. In accordance with
MIL-STD 883C.
CHARACTERISTICS
V
DD(LF) = VDD(RF) = VDD(L) = 5.0 V; Tamb = 25 °C; PWRON = HIGH; GSE = LOW; GARF = open-circuit;
RFBWS = HIGH; DC input voltages at pins VCOM, D1 to D4, S5 and S6 = 1⁄2VDD; output voltage at pins O1 to O6 = 0 V;
IDD(L)(d) = 50 mA; CCFIL = 1 nF; unless otherwise specified. Diode input voltages all with respect to VCOM
.
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD(RF,LF)
VDD(L)
supply voltage
4.5
3
5.0
5.5
5.5
V
V
laser supply
voltage
−
IDD(LF)
IDD(RF)
IDD(L)(d)
LF supply current
RF supply current
−
−
−
13
20
50
−
mA
mA
mA
−
laser diode supply
current
100
Iq
quiescent supply
current
PWRON = LOW
−
−
6
mA
Input voltages
Vi(D1-D4,S5,S6) input signal voltage all inputs;
range (with respect GSE = LOW
0
−
−
−
0.6
V
V
to VCOM
)
all inputs;
0
0.15
GSE = HIGH
VI(CM)
common mode DC
reference input
voltage range
1.6
VDD(RF,LF) − 2.2 V
1999 Aug 19
6
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
SYMBOL
LF diode amplifiers
ZCONV conversion
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
impedance
central diodes,
D1 to D4
GSE = LOW
GSE = HIGH
40
47
54
kΩ
kΩ
kΩ
kΩ
10.5
75
12.5
92
15.0
106
28
satellite diodes, GSE = LOW
S5 and S6
GSE = HIGH
20.5
24.5
Io(LF)
output current
range
note 1
central diodes,
O1 to O4
0
−
−
−
12
6
µA
µA
satellite diodes,
O5 and O6
0
VO(LF)
DC output voltage
range central and
satellite diodes
−0.2
V
DD(RF,LF) − 2.1 V
Zi
input impedance
central diodes
satellite diodes
−
−
3.1
3.1
−
−
pF
pF
IOS
channel pair
matching
note 2
central diodes,
O1 to O4
−1
−2
−
−
+1
+2
%FS
%FS
satellite diodes,
O5 and O6
B(−3dB)
−3 dB bandwidth
central diodes,
D1 to D4
65
65
90
90
115
115
kHz
kHz
satellite diodes,
S5 and S6
RF amplifier
VO(RFP)
DC output level
RFP
GSE = LOW or
HIGH;
Vi(D1 to D4) = 0 V
0.25
2.6
−
0.5
3.1
2
0.7
3.4
−
V
V
V
VO(RFN)
DC output level
RFN
GSE = LOW or
HIGH;
Vi(D1 to D4) = 0 V
Vo(RF)(dif)
differential RF
output signal
note 3
(Vo(RFP) − Vo(RFN)
)
Vo(RF)
Zo(RF)
single-sided RF
output signal
note 3
−
−
1
−
−
V
RF output
25
Ω
impedance
1999 Aug 19
7
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
SYMBOL
GRF
PARAMETER
CONDITIONS
note 4
MIN.
TYP.
MAX.
UNIT
RF path gain
GSE = LOW
GSE = HIGH
9
10.5
22.5
12
24
dB
dB
21
td(f)(RF)
RF flatness delay
GSE = LOW or
HIGH; note 5
f < 5 MHz;
RFBWS = LOW
−
−
−
−
2.0
1.0
ns
ns
f < 10 MHz;
RFBWS =
open-circuit
f < 25 MHz;
−
−
0.4
ns
RFBWS = HIGH
BRF(−3dB)
−3 dB bandwidth
(RF signal)
GSE = LOW or
HIGH
RFBWS = LOW
−
−
10
20
−
−
MHz
MHz
RFBWS =
open-circuit
RFBWS = HIGH
RFBWS = LOW
−
−
−
50
−
−
−
MHz
mV
Vn(in-band)(rms) in-band noise
(RMS value)
1.0
1.4
RFBWS =
mV
open-circuit
RFBWS = HIGH
−
2.1
1.5
−
mV
V
VO(FTC)
GFTC
fast track count DC GSE = LOW or
1.3
1.7
output level
HIGH; note 6
fast track count
gain
f = 100 kHz;
note 7
GSE = LOW
GSE = HIGH
16.5
26.5
220
18
19.5
29.5
380
dB
28
dB
BFTC(−3dB)
fast track count
300
kHz
−3 dB bandwidth
Laser supply (APC)
Io(LASER)(min) minimum laser
output current
−
−
100
mA
Vi(mon)
monitor input
voltage
N-type
P-type
−10%
0.150
+13.5%
V
V
V
−
−
V
DD(RF,LF) − 0.150
−
Vo(LASER)
laser output
Io(LASER) = 100 mA
−
V
DD(L) − 1.2
voltage range
tsw(on)(LASER) laser switch-on
time
−
−
3
−
ms
nA
Ii(mon)
monitor input
current
−
100
1999 Aug 19
8
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Control inputs
Zi(pd)
pull-down input
impedance
(pin GSE)
−
−
150
150
−
−
kΩ
Zi(pu)
pull-up input
impedance
kΩ
(pin PWRON)
VIL
LOW-level input
voltage
pins GSE
and PWRON
−0.2
−0.2
−
−
V
V
VDD(RF,LF)
--------------------------
3.3
pins GARF
+0.5
and RFBWS
VIH
HIGH-level input
voltage
pins GSE
and PWRON
−
VDD(RF,LF) + 0.2 V
V DD(RF,LF)
--------------------------
1.4
pins GARF
and RFBWS
V
DD(RF,LF) − 0.5
−
−
VDD(RF,LF) + 0.2 V
IIL
LOW-level input
current
−
−70
µA
(pins GARF
and RFBWS)
IIH
HIGH-level input
current
−
−
80
µA
(pins GARF
and RFBWS)
V
ref voltage source
VO
DC output voltage
−10%
+10%
V
V DD(RF,LF)
-------------------------
2
IO
output current
range
sink
1.5
−
−
−
mA
mA
Ω
source
−
−
−3
30
ZO
DC output
impedance
−
1999 Aug 19
9
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
Notes
1. The output current can be increased but does not match the default input range of the servo system.
2. Matching defined in % of FS output per channel pairs (O1 − O2), (O3 − O4), (S5 − S6), at 1⁄3 and 2⁄3 of full output
scale.
3. Vo(RFP) = Vo(RF); Vo(RFN) = −Vo(RF)
.
Vo(RFP)
Vo(RFN)
4. Gain is defined as: GRF = 20 × log
= 20 × log
-------------------
Vi(LF)
--------------------
Vi(LF)
ΣV
All inputs assumed to be equal: Vi(LF)
5. See Figs 3, 4 and 5.
=
i(D) , where i = 1 to 4 and D means diode.
--------------
4
6. Voltage is based on 2 PN junctions and is temperature dependent.
Vo(FTC)
7. Gain is defined as: G FTC = 20 × log
----------------------------------------
(Vi(S5) – Vi(S6)
)
MGK358
MGK357
12
14.5
12
9.00
handbook, halfpage
handbook, halfpage
t
t
G
G
d
d
(dB)
(dB)
(ns)
(ns)
(1)
(2)
11
14.0
11
8.75
(1)
10
13.5
10
8.50
8.25
(2)
9
13.0
9
8
7
12.5
12.0
8
8.00
7.75
7
10
−1
2
−1
2
10
1
10
1
10
10
10
f (MHz)
f (MHz)
ϕ
ϕ
(1) Gain.
(1) Gain.
---------
360
---------
360
Definition of delay: delay =
(2) Delay.
---------------
f
(2) Delay.
Definition of delay: delay =
---------------
f
Fig.3 Gain and delay for 50 MHz bandwidth.
Fig.4 Gain and delay for 20 MHz bandwidth.
1999 Aug 19
10
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
MGK359
12
23
handbook, halfpage
(2)
t
G
d
(dB)
(ns)
21
11
(1)
10
19
17
9
8
15
13
7
10
−1
2
1
10
10
f (MHz)
ϕ
(1) Gain.
---------
360
Definition of delay: delay =
(2) Delay.
---------------
f
Fig.5 Gain and delay for 10 MHz bandwidth.
Table 1 Control inputs, conversion impedances and gain settings
NOMINAL LF V/I
CONVERSION
(CENTRAL DIODES)
NOMINAL LF V/I
CONVERSION
(SATELLITE DIODES)
NOMINAL RF
GAIN (dB)
NOMINAL FTC
GAIN (dB)
PIN GSE
LOW
PIN GARF
LOW
47 kΩ
47 kΩ
92 kΩ
92 kΩ
7
14
18
22
24
28
32
LOW
LOW
HIGH
HIGH
HIGH
open-circuit
HIGH
10.5
15
47 kΩ
92 kΩ
LOW
12.5 kΩ
12.5 kΩ
12.5 kΩ
24.5 kΩ
24.5 kΩ
24.5 kΩ
19
open-circuit
HIGH
22.5
27
Table 2 Control inputs and RF bandwidth
PIN RFBWS
RF AMPLIFIER BANDWIDTH
LOW
10 MHz
20 MHz
50 MHz
open-circuit
HIGH
1999 Aug 19
11
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
APPLICATION INFORMATION
The circuits shown in Figs 6 and 7 are applications for the TZA1015 (HDALAS) with the SAA7370A (CD7) or the
SAA7348 (ACE).
from
microprocessor
from
microprocessor
(1)
(1)
100
nF
100
nF
RFBWS
LD
GARF
ISLICE
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
18
I
ref
LD
GSE
RFN
RFP
22
kΩ
22
kΩ
V
DD(LASER)
(2)
1 nF
1 nF
R2
V
HFIN
DD(L)
15
17
3
100
nF
(2)
C1
(2)
R1
CFIL
HFREF
4
1 nF
MON
D1
MON
D1
GND
V
V
DD(RF, LF)
5
DD(RF)
100 nF
6
D2
D2
O1
O2
O3
O4
O5
O6
D1
D2
7
3
TZA1015
(HDALAS)
SAA7370A
OPIC
D3
D3
(CD7)
8
4
D4
D4
D3
9
5
S5
S5
D4
10
11
12
13
14
7
S6
V
S6
R1
8
V
DD(LF)
R2
DD(RF, LF)
9
V
PWRON
FTC
LDON
COM
100 nF
ref
64
6
V
V
ref
V
6 × 220 pF
RL
100 nF
to
microprocessor
MGK360
(3)
(1) Pins RFBWS, GARF and GSE can be microprocessor controlled but can also be fixed or switched by any other means.
(2) For recommended values per speed see Table 3.
(3) The FTC output is available for optional processing.
Fig.6 Application diagram with SAA7370A (CD7).
1999 Aug 19
12
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
from
microprocessor
from
microprocessor
(1)
(1)
RFBWS
LD
GARF
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
LD
GSE
RFN
RFP
V
DD(LASER)
V
DD(L)
3
100
nF
(2)
C1
(2)
68 nF
R1
CFIL
HFIN
9
4
1 nF
MON
D1
MON
D1
GND
V
V
DD(RF, LF)
5
DD(RF)
100 nF
6
D2
D2
O1
O2
O3
O4
O5
O6
D1
D2
7
15
16
17
20
21
22
100
24
TZA1015
(HDALAS)
SAA7348
(ACE)
OPIC
D3
D3
8
D4
D4
D3
9
S5
S5
D4
10
11
12
13
14
S6
V
S6
S1
V
DD(RF, LF)
DD(LF)
S2
V
PWRON
FTC
LDON
COM
100 nF
ref
22 nF
V
V
FTC
H
ref
100 nF
47
kΩ
5
pF
FTC
L
25
MGK361
(1) Pins RFBWS, GARF and GSE can be microprocessor controlled but can also be fixed or switched by any other means.
(2) For recommended values per speed see Table 4.
Fig.7 Application diagram with SAA7348 (ACE).
Table 3 Recommended values of components per
Table 4 Recommended values of components per
speed for application diagram of Fig.6
speed for application diagram of Fig.7
N
C1
R1
R2
N
C1
R1
1×
2×
47 pF
47 pF
22 pF
10 pF
8.2 pF
1 kΩ
470 Ω
470 Ω
470 Ω
470 Ω
1 kΩ
470 Ω
470 Ω
470 Ω
470 Ω
1×
2×
100 pF
47 pF
22 pF
22 pF
10 pF
6.8 pF
1 kΩ
1 kΩ
4×
4×
1 kΩ
8×
8×
470 Ω
470 Ω
470 Ω
10×
16×
18×
1999 Aug 19
13
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
PACKAGE OUTLINE
SO28: plastic small outline package; 28 leads; body width 7.5 mm
SOT136-1
D
E
A
X
c
y
H
v
M
A
E
Z
28
15
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
14
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
18.1
17.7
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
1.27
0.050
1.4
0.25
0.01
0.25
0.1
0.25
0.01
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.71
0.014 0.009 0.69
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT136-1
075E06
MS-013AE
1999 Aug 19
14
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
SOLDERING
Introduction
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1999 Aug 19
15
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 19
16
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
NOTES
1999 Aug 19
17
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
NOTES
1999 Aug 19
18
Philips Semiconductors
Product specification
Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)
TZA1015
NOTES
1999 Aug 19
19
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International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
67
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/03/pp20
Date of release: 1999 Aug 19
Document order number: 9397 750 06271
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