TZA3000HL [NXP]

SDH/SONET STM4/OC12 optical receiver; SDH / SONET STM4 / OC12光接收机
TZA3000HL
型号: TZA3000HL
厂家: NXP    NXP
描述:

SDH/SONET STM4/OC12 optical receiver
SDH / SONET STM4 / OC12光接收机

接收机
文件: 总20页 (文件大小:483K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
DATA SHEET  
TZA3000  
SDH/SONET STM4/OC12 optical  
receiver  
1997 Oct 17  
Objective specification  
File under Integrated Circuits, IC19  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
FEATURES  
APPLICATIONS  
Low equivalent input noise, typically 3.5 pA/Hz  
Wide dynamic range, typically 1 µA to 1.5 mA  
Digital fibre optic receiver in short, medium and long  
haul optical telecommunications transmission systems  
or in high speed data networks  
On-chip low-pass filter. The bandwidth can be varied  
between 370 and 600 MHz using an external resistor.  
Default value is 470 MHz.  
Wideband RF gain block.  
DESCRIPTION  
Differential transimpedance of 1.8 MΩ  
On-chip AGC (Automatic Gain Control)  
The TZA3000 optical receiver is a low-noise  
transimpedance amplifier with AGC plus a limiting  
amplifier designed to be used in SDH/SONET fibre optic  
links. The TZA3000 amplifies the current generated by a  
photo detector (PIN diode or avalanche photodiode) and  
converts it to a differential output voltage.  
PECL (Positive Emitter-Coupled Logic) or CML  
(Current-Mode Logic) compatible data outputs  
LOS (Loss-Of-Signal) detection  
LOS threshold level can be adjusted using a single  
external resistor  
On-chip DC offset compensation  
Single supply voltage from 3.0 to 5.5 V  
Bias voltage for PIN diode.  
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm  
VERSION  
TZA3000HL  
TZA3000U  
LQFP32  
SOT401-1  
naked die die in waffle pack carriers; die dimensions 1.58 × 1.58 mm  
1997 Oct 17  
2
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
BLOCK DIAGRAM  
V
AGC  
V
CCA  
2
CCD  
2
2, 5  
31  
17, 20  
LOS DETECTION  
29 LOSTH  
TTL  
LOSTTL  
28  
PECL  
26 LOS  
LOSQ  
27  
peak detector  
2
k  
GAIN-  
CONTROL  
DREF  
IPhoto  
4
7
CML 18 OUTCML  
19 OUTQCML  
A1  
A2  
OUTSEL  
15  
PECL  
22 OUTPECL  
PREAMPLIFIER  
LIMITING  
OUTQPECL  
23  
AMPLIFIER  
DC-OFFSET  
COMPENSATION  
BIASING  
11  
TESTING  
14  
TZA3000  
1, 3, 6, 8  
9, 30, 32  
13, 16, 21  
24, 25  
10  
7
5
MGK881  
V
BWC  
AGND  
RFTEST  
DGND  
ref  
Fig.1 Block diagram.  
3
1997 Oct 17  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
PINNING  
SYMBOL  
PIN  
TYPE  
ground  
DESCRIPTION  
AGND  
VCCA  
1
2
3
4
5
6
7
analog ground  
supply  
ground  
analog supply voltage  
analog ground  
AGND  
DREF  
VCCA  
analog output bias voltage for PIN diode (VCCA); cathode should be connected to this pin  
supply  
ground  
analog supply voltage  
analog ground  
AGND  
IPhoto  
analog input current input; connect the anode of PIN diode to this pin; DC bias level is  
800 mV, one diode voltage above ground  
AGND  
AGND  
BWC  
8
9
ground  
ground  
analog ground  
analog ground  
10  
analog input bandwidth control pin; default bandwidth is 470 MHz; a resistor should be  
connected between Vref (pin 11) and BWC (pin 10) to decrease bandwidth, or  
between BWC (pin 10) and AGND to increase bandwidth  
Vref  
11  
12  
13  
14  
15  
analog output band gap reference voltage; nominal value approximately 1.2 V  
SUB  
substrate  
ground  
substrate pin; to be connected to AGND  
digital ground  
DGND  
RFTEST  
OUTSEL  
analog input test pin; not used in application; not connected  
CMOS input output select pin; when OUTSEL is HIGH, CML data outputs are active and  
PECL data outputs are disabled; OUTSEL is pulled LOW if left unconnected,  
PECL data outputs will then be active and CML data outputs disabled  
DGND  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
ground  
digital ground  
VCCD  
supply  
digital supply voltage  
OUTCML  
OUTQCML  
VCCD  
CML output  
CML output  
supply  
CML data output; OUTCML goes HIGH when current flows into IPhoto (pin 7)  
CML compliment of OUTCML (pin 18)  
digital supply voltage  
DGND  
ground  
digital ground  
OUTPECL  
OUTQPECL  
DGND  
PECL output PECL data output; OUTPECL goes HIGH when current flows into IPhoto (pin 7)  
PECL output PECL compliment of OUTPECL (pin 22)  
ground  
ground  
digital ground  
digital ground  
DGND  
LOS  
PECL output PECL-compatible LOS detection pin; LOS output is HIGH when the input signal  
is below the user programmable threshold level  
LOSQ  
27  
28  
PECL output PECL compliment of LOS  
LOSTTL  
TTL output  
CMOS-compatible LOS detection pin; the LOSTTL output is HIGH when the  
input signal is below the user programmable threshold level  
LOSTH  
29  
analog I/O  
pin for setting input threshold level; nominal DC voltage is VCCA 1.5 V;  
threshold level set by connecting an external resistor between LOSTH and  
VCCA or by forcing a current into LOSTH; default value for this resistor is 86 kΩ  
AGND  
AGC  
30  
31  
ground  
analog ground  
analog I/O  
AGC monitor voltage; the internal AGC circuit can be disabled by applying an  
external voltage to this pin  
AGND  
32  
ground  
analog ground  
1997 Oct 17  
4
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
DGND  
24  
AGND  
1
2
3
4
5
6
7
8
V
23 OUTQPECL  
22 OUTPECL  
21 DGND  
CCA  
AGND  
DREF  
TZA3000HL  
V
V
CCD  
20  
19  
18  
17  
CCA  
AGND  
IPhoto  
AGND  
OUTQCML  
OUTCML  
V
CCD  
MGK880  
Fig.2 Pin configuration.  
1997 Oct 17  
5
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
CHIP DIMENSIONS AND BONDING PAD LOCATIONS  
COORDINATES(1)  
COORDINATES(1)  
SYMBOL  
PAD  
SYMBOL  
PAD  
x
y
x
y
OUTQCML  
VCCD  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
1398  
1398  
1398  
1398  
1398  
1398  
1283  
1143  
986  
543  
683  
AGND  
1
2
102  
102  
102  
102  
102  
102  
102  
102  
243  
383  
523  
663  
803  
943  
1100  
1257  
1398  
1398  
1251  
1111  
971  
814  
674  
534  
395  
254  
105  
105  
105  
105  
105  
105  
105  
105  
263  
403  
VCCA  
DGND  
823  
AGND  
DREF  
VCCA  
3
OUTPECL  
OUTQPECL  
DGND  
963  
4
1103  
1243  
1400  
1400  
1400  
1400  
1400  
1400  
1400  
1400  
5
AGND  
IPhoto  
AGND  
AGND  
BWC  
6
DGND  
7
LOS  
8
LOSQ  
9
LOSTTL  
LOSTH  
AGND  
829  
10  
11  
12  
13  
14  
15  
16  
17  
18  
671  
Vref  
514  
SUB  
AGC  
357  
DGND  
RFTEST  
OUTSEL  
DGND  
VCCD  
AGND  
217  
Note  
1. All coordinates are referenced, in µm, to the bottom  
left-hand corner of the die.  
OUTCML  
32 31  
30  
29  
28  
27  
26 25  
AGND  
1
2
3
DGND  
24  
23  
V
OUTQPECL  
CCA  
AGND  
DREF  
22  
21  
20  
19  
18  
17  
OUTPECL  
DGND  
4
5
6
7
8
1.58  
mm  
TZA3000U  
V
V
CCD  
CCA  
OUTQCML  
OUTCML  
AGND  
IPhoto  
AGND  
V
CCD  
9
10 11 12 13 14  
15  
16  
0
x
0
y
MGK882  
1.58 mm  
Fig.3 Bonding pad locations: TZA3000U.  
6
1997 Oct 17  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
FUNCTIONAL DESCRIPTION  
Limiting amplifier  
The TZA3000 contains five functional blocks:  
Preamplifier input stage  
A limiting amplifier boosts the signal up to PECL levels.  
The output can be either CML or PECL compatible,  
selected by means of pin OUTSEL. When OUTSEL is  
HIGH, CML data outputs are active and PECL data  
outputs are disabled. If OUTSEL is left unconnected, it is  
pulled LOW and PECL data outputs are active while CML  
data outputs are disabled.  
Low-pass filter  
Limiting amplifier stage  
Offset compensation loop  
Loss-of-signal detection unit.  
Offset cancellation loop  
Preamplifier  
A control loop connected between the limiting amplifier  
output and the differential amplifier input cancels the DC  
offset. The loop bandwidth is fixed internally at 30 kHz.  
The preamplifier provides low-noise amplification of the  
current generated by a photodiode connected to the  
IPhoto pin.  
A differential amplifier converts the output of the  
preamplifier to a differential voltage. An AGC loop  
increases the dynamic range of the receiver by reducing  
the feedback resistance of the preamplifier. The AGC loop  
hold capacitor is integrated on-chip, so an external  
capacitor is not needed for AGC. The AGC voltage can be  
monitored at pin 31. This pin can be left unconnected for  
normal operation. It can also be used to force an external  
AGC voltage. If pin 31 (AGC) is connected to AGND, the  
internal AGC loop is disabled and the receiver gain is at a  
maximum. In this case, the maximum input current is about  
50 µA.  
Loss-of-signal detection (LOS)  
The LOS section detects an input signal level below a fixed  
threshold. The threshold is determined by the current  
through pin LOSTH. If this current is increased, the  
threshold level will rise. An external resistor between  
LOSTH and VCCA can be used, or a current can be forced  
into LOSTH. The default value for the external resistor is  
86 k. In this case, the current through LOSTH will be  
approximately 17.4 µA since the voltage at pin LOSTH is  
regulated at 1.5 V below the supply voltage. This threshold  
corresponds to an input current of 0.96 µA. The ratio of  
LOSTH current to input current is thus approximately  
18 : 1. When the input signal level falls below this  
threshold, the LOS (PECL compatible) and LOSTTL (TTL  
compatible) outputs go HIGH. The hysteresis is fixed  
internally at 3 dB. Response time is typically less than  
20 µs.  
Low-pass filter  
A low-pass filter controls the bandwidth of the receiver,  
which can be varied between 300 and 600 MHz.  
The bandwidth is set to 470 MHz by default. It can be  
decreased by connecting a resistor between BWC (pin 10)  
and Vref (pin 11) or increased by connecting a resistor  
between BWC and AGND.  
1997 Oct 17  
7
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
VCC  
Vn  
PARAMETER  
MIN.  
0.5  
MAX.  
+6  
UNIT  
supply voltage  
DC voltage  
V
pin 7: IPhoto  
pin 14: RFTEST  
0.5  
0.5  
+1  
V
V
V
V
V
V
V
V
V
V
V
VCC + 0.5  
pins 22, 23, 26 and 27: OUTPECL, OUTQPECL, LOS and LOSQ  
V
CC 2  
CC 2  
VCC + 0.5  
VCC + 0.5  
pins 18 and 19: OUTCML and OUTQCML  
pin 29: LOSTH  
pin 10: BWC  
V
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
VCC + 0.5  
+3.2  
pin 31: AGC  
VCC + 0.5  
pin 11: Vref  
+3.2  
pin 4: DREF  
V
V
V
CC + 0.5  
pin 15: OUTSEL  
pin 28: LOSTTL  
DC current  
CC + 0.5  
CC + 0.5  
In  
pin 7: IPhoto  
1  
2  
+2.5  
+2  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mW  
°C  
pin 14: RFTEST  
pins 22, 23, 26 and 27: OUTPECL, OUTQPECL, LOS and LOSQ 25  
+10  
+15  
+2  
pins 18,19: OUTCML and OUTQCML  
pin 29: LOSTH  
15  
2  
pin 10: BWC  
1  
+1  
pin 31: AGC  
0.2  
2  
+0.2  
+2.5  
+2.5  
+0.5  
+16  
600  
+150  
150  
+85  
pin 11: Vref  
pin 4: DREF  
2.5  
0.5  
16  
pin 15: OUTSEL  
pin 28: LOSTTL  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
ambient temperature  
65  
°C  
Tamb  
40  
°C  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
tbf  
UNIT  
K/W  
K/W  
Rth(j-s)  
Rth(j-a)  
thermal resistance from junction to solder point  
thermal resistance from junction to ambient  
tbf  
1997 Oct 17  
8
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
CHARACTERISTICS  
For typical values Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient  
temperature range and process spread.  
SYMBOL  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
VCC  
ICCD  
3
5
5.5  
28  
V
digital supply current  
note 1  
13  
20  
47  
17  
36  
mA  
mA  
mA  
mA  
mW  
°C  
note 2  
note 3  
11  
24  
24  
51  
ICCA  
Ptot  
Tj  
analog supply current  
total power dissipation  
junction temperature  
ambient temperature  
525  
+110  
+85  
40  
40  
Tamb  
Rtr  
+25  
°C  
small-signal transresistance  
of the receiver  
measured differentially at  
PECL outputs  
1800  
kΩ  
measured differentially at  
CML outputs  
1100  
470  
kΩ  
f3dB(h)  
f3dB(l)  
high frequency 3dB point  
low frequency 3dB point  
pin BWC left  
MHz  
unconnected; note 4  
20  
30  
40  
kHz  
µA  
Ii(IPhoto)(p-p) input current on pin IPhoto  
(peak-to-peak value)  
VCC = 5 V  
400  
400  
720  
+4  
+1500  
+500  
970  
VCC = 3.3 V  
+4  
µA  
Vbias(IPhoto) input bias voltage on pin  
IPhoto  
800  
mV  
In(tot)  
total integrated RMS noise  
current over bandwidth  
(referenced to input)  
Ci = 1.2 pF; note 5  
f = 311 MHz  
f = 450 MHz  
f = 622 MHz  
55  
nA  
nA  
nA  
80  
120  
PSRR  
power supply rejection ratio  
at VCC  
measured differentially;  
note 6  
f = 100 kHz to 10 MHz  
f = 10 MHz to 100 MHz  
f = 100 MHz to 1 GHz  
1
2
5
1
2
µA/V  
µA/V  
µA/V  
dB/ms  
5
100  
Rtr/t  
AGC loop constant  
PECL outputs: OUTPECL and OUTQPECL  
VOL  
VOH  
VOO  
LOW-level output voltage  
HIGH-level output voltage  
50 to VCC 2 V  
50 to VCC 2 V  
V
CC 1100  
CC 1840  
V
V
CC 900  
mV  
V
CC 1620 mV  
differential output offset  
voltage  
10  
+10  
mV  
tr  
tf  
rise time  
fall time  
20% to 80%  
80% to 20%  
200  
140  
300  
250  
ps  
ps  
1997 Oct 17  
9
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
PECL outputs: LOS and LOSQ  
VOL  
VOH  
VOO  
LOW-level output voltage  
HIGH-level output voltage  
50 to VCC 2 V  
50 to VCC 2 V  
V
CC 1100  
CC 1840  
V
V
CC 900  
mV  
V
CC 1620 mV  
differential output offset  
voltage  
10  
+10  
mV  
tr  
tf  
rise time  
fall time  
20% to 80%  
80% to 20%  
600  
200  
ns  
ns  
CML outputs: OUTCML and OUTQCML  
VO  
single ended output voltage  
50 to VCC  
50 to VCC  
V
CC 260  
VCC  
260  
mV  
mV  
Vo(se)(p-p)  
single-ended output voltage  
(peak-to-peak value)  
150  
200  
VOO  
Ro  
tr  
differential output offset  
voltage  
50 to VCC  
10  
80  
+10  
120  
mV  
single ended output  
resistance  
100  
92  
rise time  
20% to 80%;  
50 , 1 pF load  
ps  
ps  
tf  
fall time  
80% to 20%;  
62  
50 , 1 pF load  
CMOS input: OUTSEL  
VIL  
VIH  
LOW-level input voltage  
HIGH-level input voltage  
0.4  
0.8  
V
V
V
CC 1  
VCC 0.5  
CMOS output: LOSTTL  
VOL  
VOH  
LOW-level output voltage  
HIGH-level output voltage  
0
0.2  
V
V
V
CC 0.2  
VCC  
Notes  
1. OUTPECL, OUTQPECL, OUTCML, OUTQCML, LOS and LOSQ outputs are left unconnected. OUTPECL and  
OUTQPECL outputs are active.  
2. OUTPECL and OUTQPECL outputs are terminated with 50 to VT. VT is an external termination voltage for PECL  
outputs and is 2 V below the supply voltage. OUTCML, OUTQCML, LOS and LOSQ outputs are left unconnected  
3. OUTCML and OUTQCML outputs are terminated with 50 to VCCD; CML outputs are active. OUTPECL,  
OUTQPECL, LOS and LOSQ outputs are left unconnected  
4. The bandwidth is set to 470 MHz by default. It can be varied between 300 and 600 MHz by adjusting the voltage at  
pin BWC.  
5. All In(tot) measurements were made with an input capacitance of Ci = 1.2 pF. This was comprised of 0.7 pF for the  
photodiode itself, with 0.3 pF allowed for the PCB layout and 0.2 pF intrinsic to the package.  
6. PSRR is defined as the ratio of the equivalent current change at the input (IIPhoto) to a change in supply voltage:  
IIPhoto  
PSRR =  
--------------------  
VCC  
For example, a 1 mV disturbance on VCC at 10 MHz will typically generate the equivalent of 2 nA extra photodiode  
current.  
1997 Oct 17  
10  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
APPLICATION INFORMATION  
V
CC  
680 nF  
10 µH  
10 µH  
22 nF  
22 nF  
86 kΩ  
2
2
V
V
LOSTH  
CCA  
CCD  
2, 5  
29  
17, 20  
LOSQ  
LOS  
27  
26  
28  
LOSTTL  
R1  
R1  
DREF  
IPhoto  
Z
Z
= 50 Ω  
= 50 Ω  
o
o
4
7
OUTQPECL  
OUTPECL  
23  
22  
TZA3000  
OUTQCML  
OUTCML  
19  
18  
R2  
R2  
1, 3, 6, 8  
9, 30, 32  
13, 16, 21  
24, 25  
31  
10  
14  
11  
15  
AGND AGC BWC RFTEST  
7
V
OUTSEL  
DGND  
ref  
MGK883  
5
Fig.4 Application diagram: PECL data outputs active.  
V
CC  
680 nF  
10 µH  
10 µH  
22 nF  
22 nF  
86 kΩ  
2
2
V
V
LOSTH  
CCA  
CCD  
2, 5  
29  
17, 20  
LOSQ  
LOS  
27  
26  
28  
LOSTTL  
DREF  
IPhoto  
4
7
OUTQPECL  
OUTPECL  
23  
22  
TZA3000  
50  
50  
Z
= 50 Ω  
o
OUTQCML  
OUTCML  
19  
18  
1, 3, 6, 8  
9, 30, 32  
13, 16, 21  
24, 25  
31  
10  
14  
11  
15  
Z
= 50 Ω  
o
AGND AGC BWC RFTEST  
7
V
OUTSEL  
DGND  
ref  
MGK884  
5
Fig.5 Application diagram: CML data outputs active.  
11  
1997 Oct 17  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
CML/PECL OUTPUT  
V
CC  
V
O(max)  
V
OQH  
V
OH  
V
o (p-p)  
V
OQL  
V
OO  
V
OL  
V
O(min)  
MGK885  
Fig.6 Logic level symbol definitions for CML and PECL.  
V
V
CC  
CC  
105 Ω  
105 Ω  
100 Ω  
100 Ω  
OUTQCML  
OUTCML  
OUTPECL  
OUTQPECL  
0.5 mA  
9 mA  
0.5 mA  
6 mA  
MGK886  
a. CML.  
b. PECL.  
Fig.7 Output circuits.  
12  
1997 Oct 17  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
PECL outputs: OUTPECL (22), OUTQPECL (23), LOS (26) and LOSQ (27)  
V
= 3.3 V  
CC  
R1 = 127 Ω  
R1 = 127 Ω  
V
OQ  
V
IQ  
V
I
V
O
R2 = 82.5 Ω  
R2 = 82.5 Ω  
GND  
V
= 5 V  
CC  
R1 = 83.3 Ω  
R1 = 83.3 Ω  
V
OQ  
V
IQ  
V
I
V
O
R2 = 125 Ω  
R2 = 125 Ω  
GND  
MGK887  
Fig.8 PECL termination schemes.  
13  
1997 Oct 17  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
100 , an 8 mA tail current would be needed to generate  
the same voltage swing. This would increase power  
dissipation by 33%.  
CML outputs: OUTCML (18) and OUTQCML (19)  
The output impedance of the CML output driver is 100 Ω  
(see Figs 7 and 9), which doesn’t match the characteristic  
impedance of the strip line. While this means that the  
reflections of some incident edges will arrive at the driver  
output on the PCB, this value was selected to reduce  
power dissipation inside the IC. The parallel combination  
of 100 and 50 (33 Ω) will generate a signal swing of  
200 mV peak-to-peak (single sided) with a tail current of  
6 mA. If the output impedance was 50 rather than  
If necessary, the output impedance of the generator can  
be matched to the line impedance by connecting an  
external 100 resistor in parallel with the output as shown  
in Fig.10. The magnitude of the output voltage swing will  
not change due to adaptive regulation. However, power  
dissipation will increase by 33%.  
generator  
inside TZA3000  
interconnect  
PCB  
receiver  
inside TZA3004  
V
CC  
V
CC  
100 100  
Z
Z
= 50 Ω  
o
o
50 Ω  
50 Ω  
V
V
I
O
= 50 Ω  
V
V
IQ  
OQ  
MGK888  
Fig.9 CML interface circuit without matched impedance; low power dissipation.  
generator  
inside TZA3000  
interconnect  
PCB  
receiver  
inside TZA3004  
V
CC  
V
CC  
100 100  
100 100  
Z
Z
= 50 Ω  
= 50 Ω  
o
o
50 Ω  
50 Ω  
V
V
I
O
V
V
IQ  
OQ  
MGK889  
Fig.10 CML interface circuit with matched impedance; higher power dissipation.  
14  
1997 Oct 17  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
PACKAGE OUTLINE  
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm  
SOT401-1  
c
y
X
A
E
17  
24  
Z
16  
25  
E
e
A
H
2
E
A
(A )  
3
A
1
w M  
p
θ
pin 1 index  
b
L
p
32  
9
L
1
8
detail X  
Z
v M  
D
A
e
w M  
b
p
D
B
H
v M  
B
D
0
2.5  
scale  
5 mm  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
D
H
L
L
v
w
y
Z
Z
E
θ
1
2
3
p
E
p
D
max.  
7o  
0o  
0.15 1.5  
0.05 1.3  
0.27 0.18 5.1  
0.17 0.12 4.9  
5.1  
4.9  
7.15 7.15  
6.85 6.85  
0.75  
0.45  
0.95 0.95  
0.55 0.55  
mm  
1.60  
0.25  
0.5  
1.0  
0.2 0.12 0.1  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
95-12-19  
97-08-04  
SOT401-1  
1997 Oct 17  
15  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
If wave soldering cannot be avoided, the following  
conditions must be observed:  
SOLDERING  
Introduction  
A double-wave (a turbulent wave with high upward  
pressure followed by a smooth laminar wave)  
soldering technique should be used.  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
The footprint must be at an angle of 45° to the board  
direction and must incorporate solder thieves  
downstream and at the side corners.  
Even with these conditions, do not consider wave  
soldering LQFP packages LQFP48 (SOT313-2),  
LQFP64 (SOT314-2) or LQFP80 (SOT315-1).  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Reflow soldering  
Reflow soldering techniques are suitable for all LQFP  
packages.  
Maximum permissible solder temperature is 260 °C, and  
maximum duration of package immersion in solder is  
10 seconds, if cooled to less than 150 °C within  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
6 seconds. Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Several techniques exist for reflowing; for example,  
thermal conduction by heated belt. Dwell times vary  
between 50 and 300 seconds depending on heating  
method. Typical reflow temperatures range from  
215 to 250 °C.  
Repairing soldered joints  
Fix the component by first soldering two diagonally-  
opposite end leads. Use only a low voltage soldering iron  
(less than 24 V) applied to the flat part of the lead. Contact  
time must be limited to 10 seconds at up to 300 °C. When  
using a dedicated tool, all other leads can be soldered in  
one operation within 2 to 5 seconds between  
270 and 320 °C.  
Preheating is necessary to dry the paste and evaporate  
the binding agent. Preheating duration: 45 minutes at  
45 °C.  
Wave soldering  
Wave soldering is not recommended for LQFP packages.  
This is because of the likelihood of solder bridging due to  
closely-spaced leads and the possibility of incomplete  
solder penetration in multi-lead devices.  
1997 Oct 17  
16  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 Oct 17  
17  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
NOTES  
1997 Oct 17  
18  
Philips Semiconductors  
Objective specification  
SDH/SONET STM4/OC12 optical receiver  
TZA3000  
NOTES  
1997 Oct 17  
19  
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
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Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,  
Fax. +43 160 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773  
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106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Belgium: see The Netherlands  
Brazil: see South America  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 689 211, Fax. +359 2 689 102  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,  
Tel. +65 350 2538, Fax. +65 251 6500  
Colombia: see South America  
Czech Republic: see Austria  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
Tel. +45 32 88 2636, Fax. +45 31 57 0044  
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Tel. +27 11 470 5911, Fax. +27 11 470 5494  
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Tel. +358 9 615800, Fax. +358 9 61580920  
South America: Rua do Rocio 220, 5th floor, Suite 51,  
04552-903 São Paulo, SÃO PAULO - SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 829 1849  
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427  
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Tel. +34 3 301 6312, Fax. +34 3 301 4107  
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Tel. +49 40 23 53 60, Fax. +49 40 23 536 300  
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Tel. +46 8 632 2000, Fax. +46 8 632 2745  
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,  
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
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Hungary: see Austria  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
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Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
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Tel. +66 2 745 4090, Fax. +66 2 398 0793  
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Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
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TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
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Tel. +1 800 234 7381  
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Tel. +82 2 709 1412, Fax. +82 2 709 1415  
Uruguay: see South America  
Vietnam: see Singapore  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,  
Internet: http://www.semiconductors.philips.com  
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA55  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
427027/300/01/pp20  
Date of release: 1997 Oct 17  
Document order number: 9397 750 01679  

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