TZA3001BHL/C4 [NXP]
IC SPECIALTY INTERFACE CIRCUIT, PQFP32, PLASTIC, SOT-401, LQFP-32, Interface IC:Other;
| 型号： | TZA3001BHL/C4 |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY INTERFACE CIRCUIT, PQFP32, PLASTIC, SOT-401, LQFP-32, Interface IC:Other |
| 文件： | 总35页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser
drivers
Product specification
2000 Feb 22
Supersedes data of 2000 Jan 31
File under Integrated Circuits, IC19
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
FEATURES
APPLICATIONS
• 622 Mbits/s data input, both Current Mode Logic (CML)
and Positive Emitter Coupled Logic (PECL) compatible;
maximum 800 mV (p-p)
• SDH/SONET STM4/OC12 optical transmission systems
• SDH/SONET STM4/OC12 optical laser modules.
• Adaptive laser output control with dual loop, stabilizing
optical 1 and 0 levels
GENERAL DESCRIPTION
The TZA3001AHL, TZA3001BHL and TZA3001U are fully
integrated laser drivers for STM4/OC12 (622 Mbits/s)
systems, incorporating the RF path between the data
multiplexer and the laser diode. Since the dual loop bias
and modulation control circuits are integrated on the IC,
the external component count is low. Only decoupling
capacitors and adjustment resistors are required.
• Optional external control of laser modulation and biasing
currents (non-adaptive)
• Automatic laser shutdown
• Few external components required
• Rise and fall times of 120 ps (typical value)
• Jitter <50 mUI (p-p)
The TZA3001AHL features an alarm function for signalling
extreme bias current conditions. The alarm low and high
threshold levels can be adjusted to suit the application
using only a resistor or a current Digital-to-Analog
Converter (DAC).
• RF output current sinking capability of 60 mA
• Bias current sinking capability of 90 mA
• Power dissipation of 430 mW (typical value)
• Low cost LQFP32 5 × 5 plastic package
• Single 5 V power supply.
The TZA3001BHL is provided with an additional RF data
input to allow remote system testing (loop mode).
TZA3001AHL
The TZA3001U is a bare die version for use in compact
laser module designs. The die contains 40 pads and
features the combined functionality of the TZA3001AHL
and the TZA3001BHL.
• Laser alarm output for signalling extremely low and high
bias current conditions.
TZA3001BHL
• Extra STM4 622 Mbits/s loop mode input; both CML and
PECL compatible.
TZA3001U
• Bare die version with combined bias alarm and loop
mode functionality.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TZA3001AHL
TZA3001BHL
TZA3001U
LQFP32
plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm
SOT401-1
−
bare die; 2000 × 2000 × 380 µm
−
2000 Feb 22
2
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
BLOCK DIAGRAM
ALARM TONE TZERO ALARMLO ALARMHI
26
4
5
21
18
2
MONIN
LASER
CONTROL
BLOCK
22
23
ONE
ZERO
13
12
15
data input
(differential)
LA
28
29
CURRENT
SWITCH
DIN
LAQ
BIAS
DINQ
6
BAND GAP
REFERENCE
BGAP
TZA3001AHL
1, 3, 8, 9,
19, 20
27, 30
11, 14, 16, 17
24, 25, 32
7
10
31
MGK271
4
11
GND
V
V
V
ALS
CC(R) CC(G) CC(B)
Fig.1 Block diagram of TZA3001AHL.
ENL TONE TZERO
26
4
5
2
22
23
MONIN
ONE
LASER
CONTROL
BLOCK
ZERO
28
29
DIN
13
12
15
LA
DINQ
CURRENT
SWITCH
MUX
LAQ
BIAS
19
20
DLOOP
DLOOPQ
6
BAND GAP
REFERENCE
BGAP
TZA3001BHL
1, 3, 8, 9,
18, 21
27, 30
11, 14, 16, 17
24, 25, 32
7
10
31
MGK270
4
11
GND
V
V
V
ALS
CC(R) CC(G) CC(B)
Fig.2 Block diagram of TZA3001BHL.
3
2000 Feb 22
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
PINNING
PIN
PAD
SYMBOL
DESCRIPTION
TZA3001AHL TZA3001BHL TZA3001U
GND
1
2
3
−
4
1
2
3
−
4
1
2
3
4
5
ground
MONIN
GND
monitor photodiode current input
ground
IGM
not connected
TONE
connection for external capacitor used for setting
optical 1 control loop time constant (optional)
TZERO
5
5
6
connection for external capacitor used for setting
optical 0 control loop time constant (optional)
BGAP
VCC(G)
VCC(G)
GND
6
7
6
7
7
connection for external band gap decoupling capacitor
supply voltage (green domain); note 1
supply voltage (green domain); note 1
ground
8
−
−
9
8
8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
−
GND
9
9
ground
VCC(B)
VCC(B)
GND
10
−
10
−
supply voltage (blue domain); note 2
supply voltage (blue domain); note 2
ground
11
12
13
14
15
16
17
−
11
12
13
14
15
16
17
−
LAQ
laser modulation output inverted
laser modulation output
LA
GND
ground
BIAS
laser bias current output
ground
GND
GND
ground
GND
ground
ALARMHI
VCC(R)
VCC(R)
DLOOP
VCC(R)
DLOOPQ
VCC(R)
ALARMLO
VCC(R)
ONE
18
−
−
maximum bias current alarm reference level input
supply voltage (red domain); note 3
supply voltage (red domain); note 3
loop mode data input
18
−
19
−
19
−
24
−
20
−
supply voltage (red domain); note 3
loop mode data input inverted
supply voltage (red domain); note 3
minimum bias current alarm reference level input
supply voltage (red domain); note 3
optical 1 reference level input
optical 0 reference level input
ground
20
−
25
26
27
−
−
21
−
−
21
22
23
24
25
−
22
23
24
25
26
−
28
29
30
31
32
33
34
ZERO
GND
GND
ground
ALARM
ENL
alarm output
26
27
loop mode enable input
VCC(R)
27
supply voltage (red domain); note 3
2000 Feb 22
4
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
PIN
PAD
SYMBOL
DIN
DESCRIPTION
TZA3001AHL TZA3001BHL TZA3001U
28
29
30
31
32
−
28
29
30
31
32
−
35
36
37
38
39
40
data input
DINQ
VCC(R)
ALS
data input inverted
supply voltage (red domain); note 3
automatic laser shutdown input
ground
GND
GND
ground
Notes
1. Supply voltage for the Monitor PhotoDiode (MPD) input current.
2. Supply voltage for the laser modulation outputs (LA, LAQ).
3. Supply voltage for the data inputs (DIN, DINQ), optical 1 and 0 reference level inputs (ONE, ZERO), and the bias
current alarm reference level inputs (ALARMHI, ALARMLO).
GND
GND
MONIN
GND
1
2
3
4
5
6
7
8
24
23
ZERO
22 ONE
ALARMLO
TONE
TZERO
BGAP
21
20
19
TZA3001AHL
V
V
CC(R)
CC(R)
V
18 ALARMHI
17 GND
CC(G)
GND
MGK273
Fig.3 Pin configuration of TZA3001AHL.
2000 Feb 22
5
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
GND
GND
MONIN
GND
1
2
3
4
5
6
7
8
24
23
ZERO
22 ONE
V
TONE
TZERO
BGAP
21
CC(R)
TZA3001BHL
20 DLOOPQ
19
18
17
DLOOP
V
V
CC(G)
CC(R)
GND
GND
MGK272
Fig.4 Pin configuration of TZA3001BHL.
FUNCTIONAL DESCRIPTION
The input buffers present a high impedance to the data
stream on the differential inputs (pins DIN and DINQ);
see Fig.5. The input signal can be at a CML level of
approximately 200 mV (p-p) below the supply voltage, or
at a PECL level up to 800 mV (p-p). The inputs can be
configured to accept CML signals by connecting pins DIN
and DINQ to VCC(R) via external 50 Ω pull-up resistors.
If PECL compatibility is required, the usual Thevenin
termination can be applied.
The TZA3001AHL, TZA3001BHL and TZA3001U laser
drivers accept a 622 Mbits/s STM4 Non-Return to Zero
(NRZ) input data stream, and generate an output signal
with sufficient current to drive a solid state Fabry Perot
(FP) or Distributed FeedBack (DFB) laser. They also
contain dual loop control circuitry for stabilizing the true
laser optical power levels representing logic 1 and logic 0.
V
CC(R)
10 kΩ
10 kΩ
100 Ω
100 Ω
DIN, DLOOP
DINQ, DLOOPQ
MGS910
GND
Fig.5 DIN/DINQ and DLOOP/DLOOPQ inputs.
6
2000 Feb 22
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
For ECL signals (negative and referenced to ground), the
inputs should be AC-coupled to the signal source.
If AC-coupling is applied, a constant input signal (either
LOW or HIGH) will cause the device to be in an undefined
state. To avoid this, it is recommended to apply a slight
offset to the input stage. The applied offset must be higher
than the specified value in Chapter “Characteristics”, but
much lower than the applied input voltage swing.
Automatic laser control
A laser with a Monitor PhotoDiode (MPD) is required for
the laser control circuit (see application diagrams
Figs 18 and 19).
The MPD current is proportional to the laser emission and
is applied to pin MONIN. The MPD current range is
100 to 1000 µA (p-p). The input buffer is optimized to cope
with an MPD capacitance of up to 50 pF. To prevent the
input buffer from oscillating if the MPD capacitance is low,
the capacitance should be increased to the minimum value
specified in Chapter “Characteristics”, by connecting a
The RF path is fully differential and contains a differential
preamplifier and a main amplifier. The main amplifier is
able to operate at the large peak currents required at the
output laser driver stage and is insensitive to supply
voltage variations. The output signal from the main
amplifier drives a current switch which supplies a
guaranteed maximum modulation current of 60 mA to
pins LA and LAQ (see Fig.6). The BIAS pin outputs a
guaranteed maximum DC bias current of up to 90 mA for
adjusting the optical laser output to a level above its light
emitting threshold (see Fig.7).
capacitor between pin MONIN and VCC(G)
.
DC reference currents are applied to pins ONE and ZERO
to set the MPD reference levels for laser HIGH and laser
LOW respectively. This is adequately achieved by using
resistors to connect VCC(R) to pins ONE and ZERO,
(see Fig.8), however, current DACs can also be used.
The voltages on pins ONE and ZERO are held at a
constant level of 1.5 V below VCC(R). The reference current
applied to pin ONE is internally multiplied by 16 and the
reference current flowing into pin ZERO is internally
multiplied by 4. The accuracy of the VCC(R) − 1.5 V voltage
at pins ONE and ZERO is described in Section “Accuracy
of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI”.
LA LAQ
handbook, halfpage
TR
TR
n
ALS
MGS906
V
handbook, halfpage
CC(R)
GND
30 kΩ
ONE, ZERO, ALARMLO, ALARMHI
Fig.6 LA and LAQ outputs.
BIAS
handbook, halfpage
50 µA
TR
TR
n
GND
MGS908
ALS
MGS907
GND
Fig.8 ONE, ZERO, ALARMLO and ALARMHI
inputs.
Fig.7 Laser driver bias current output circuit.
2000 Feb 22
7
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
The reference current and the resistor for the optical 1
modulation current control loop is calculated using the
following formulae:
Designing the modulation and bias current control
loop
The optical 1 and 0 current control loop time constants are
determined by on-chip capacitances. If the resulting time
constants are found to be too small in a specific
application, they can be increased by connecting a
capacitor between pins TZERO and TONE.
1
16
Iref(ONE)
=
× I
[A]
(1)
(2)
------
MPD(ONE)
1.5
24
IMPD(ONE)
RONE
=
=
[Ω]
-----------
IONE
------------------------
The optical 1 modulation current control loop time
constant (τ) and bandwidth (B) can be estimated using the
following formulae:
The reference current and resistor for the optical 0 bias
current control loop is calculated using the following
formulae:
80 × 103
τONE = (40 × 10–12 + CTONE) ×
[s ]
(5)
(6)
---------------------
1
4
ηLASER
Iref(ZERO)
=
× I
[A]
(3)
--
MPD(ZERO)
1
BONE
=
[Hz]
1.5
6
-------------------------
RZERO
=
=
[Ω]
(4)
-------------
IZERO
--------------------------
2π × τONE
I MPD(ZERO)
ηLASER
In these formulae, IMPD(ONE) and IMPD(ZERO) represent the
MPD current during an optical 1 and an optical 0 period,
respectively.
BONE
=
[Hz]
-------------------------------------------------------------------------------------------------
2π × (40 × 10–12 + CTONE) × 80 × 103
The optical 0 bias current control loop time constant and
bandwidth can be estimated using the following formulae:
EXAMPLE
50 × 103
ηLASER
A laser operates at optical output power levels of 0.3 mW
for laser HIGH and 0.03 mW for laser LOW (extinction ratio
of 10 dB). Suppose the corresponding MPD currents for
this particular laser are 260 and 30 µA, respectively.
τZERO = (40 × 10–12 + CTZERO) ×
[s ]
(7)
(8)
---------------------
1
BZERO
=
[Hz]
----------------------------
2π × τZERO
In this example, the reference current flowing into
pin ONE is:
1
ηLASER
× 260 × 10–6 = 16.25 µA
BZERO
=
[Hz]
----------------------------------------------------------------------------------------------------
Iref(ONE)
=
------
16
2π × (40 × 10–12 + CTZERO) × 50 × 103
This current can be set using a current source or simply by
a resistor of the appropriate value connected between
The term ηLASER (dimensionless) in the above formulae is
the product of the following two terms:
pin ONE and VCC(R)
.
• ηEO is the electro-optical efficiency which accounts for
the steepness of the laser slope characteristic. It defines
the rate at which the optical output power increases with
modulation current, and is measured in W/A.
In this example, the resistor is:
1.5
RONE
=
= 92.3 kΩ
--------------------------------
16.25 × 10–6
• R is the MPD responsivity. It determines the amount of
MPD current for a given value of optical output power,
and is measured in A/W.
In this example, the reference current at pin ZERO is:
1
Iref(ZERO)
=
× 30 × 10–6 = 7.5 µA
--
4
EXAMPLE
and can be set using a resistor:
1.5
A laser with an MPD has the following specifications:
PO = 1 mW, Ith = 25 mA, ηEO = 30 mW/A, R = 500 mA/W.
The term Ith is the required threshold current to switch on
the laser. If the laser operates just above the threshold
level, it may be assumed that ηEO near the optical 0 level
is 50% of ηEO near the optical 1 level, due to the slope
decreasing near the threshold level.
RZERO
=
= 200 kΩ
-------------------------
7.5 × 10–6
It should be noted that the MPD current is stabilized rather
than the actual laser optical output power. Any deviations
between optical output power and MPD current, known as
‘tracking errors’, cannot be corrected.
2000 Feb 22
8
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
In this example, the resulting bandwidth for the optical 1
modulation current control loop, without an external
capacitor, is:
MGS902
3
30 × 10–3 × 500 × 10–3
handbook, halfpage
BONE
=
≈ 750 Hz
---------------------------------------------------------------------
2π × 40 × 10–12 × 80 × 103
I
o(mod)(off)
(mA)
(1)
The resulting bandwidth for the optical 0 bias current
control loop, without an external capacitor, is:
2
0.5 × 30 × 10–3 × 500 × 10–3
BZERO
=
≈ 600 Hz
-------------------------------------------------------------------------
2π × 40 × 10–12 × 50 × 103
It is not necessary to add additional capacitance with this
type of laser.
1
(2)
Control loop data pattern and bit rate dependency
The constants in equations (1) and (3) are valid when the
data pattern frequently contains a sufficient number of
‘constant zeroes’ and ‘constant ones’. A single control loop
time period (τONE and τZERO) must contain ones and zeros
for at least approximately 6 ns (as provided, for example,
by the A1/A2 frame alignment bytes for STM4/OC12).
In practice, the optical extinction ratio increases if the bit
rate increases. Therefore, it is important to use the actual
data patterns and bit rate of the final application circuit for
adjusting the optical levels.
0
0
20
40
60
I
(mA)
o(mod)(on)
(1) Worst case operation (Tj = 125 °C, VCC = 5.5 V
and worst case parameter processes).
(2) Typical operation.
Fig.9 Io(mod)(off) as a function of Io(mod)(on)
.
The laser driver peak detectors are able to track MPD
output current overshoot and undershoot conditions.
Unfortunately, these conditions affect the ability of the IC
to correctly interpret the high and low level MPD current.
In particular, the occurrence of undershoot can have a
markedly adverse effect on the interpretation of the low
level MPD current.
Monitoring the bias and modulation current
Although not recommended, the bias and modulation
currents generated by the laser driver can be monitored by
measuring the voltages on pins TZERO and TONE,
respectively (see Fig.10). The relationship between these
voltages and the corresponding currents are given as
transconductance values and are specified in
Additional bias by modulation ‘off’ current
Chapter “Characteristics”. The voltages on pins TZERO
and TONE range from 1.4 to 3.4 V. Any connection to
these pins should have a very high impedance value. It is
mandatory to use a CMOS buffer or an amplifier with an
input impedance higher than 100 GΩ and with an
extremely low input leakage current (pA).
Although during operation, the full modulation current
switches between outputs LA and LAQ, a small amount of
modulation current continues to flow through the inactive
pin.
For example, when the laser, whose cathode is connected
to LA, is in the ‘dark’ part of its operating cycle (logic 0),
some of the modulation ‘off’ current flows through LA while
most of the current flows through LAQ. This value
Io(mod)(off) is effectively added to the bias current and is
subtracted from the modulation current. Fortunately, the
value correlates closely with the magnitude of the
modulation current. Therefore, applications requiring low
bias and low modulation are less affected. Figure 9 shows
the modulation ‘off’ current as a function of the modulation
‘on’ current.
2000 Feb 22
9
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
Manual laser override
The automatic laser control function can be overridden by
connecting voltage sources to pins TZERO and TONE to
take direct control of the current sources for bias and
modulation respectively. The control voltages should
range from 1.4 to 3.4 V to swing the modulation current
over the range 1 to 60 mA and the bias current over the
range 1 to 90 mA. These current ranges are guaranteed.
TZERO, TONE
handbook, halfpage
LINEAR VOLTAGE TO
CURRENT CONVERTER
<
1 nA
1 nA
2.4 V
<
Due to the tolerance range in the manufacturing process,
some devices may have higher current values than those
specified, as shown in Figs 12 and 13. Both figures show
that temperature changes cause a slight tilting of the linear
characteristic around an input voltage of 2.4 V.
40 pF
MGS905
GND
Consequently, the manually controlled current level is
most insensitive to temperature variations at around this
value. Bias and modulation currents in excess of the
specified range are not supported and should be avoided.
Fig.10 TZERO and TONE internal configuration.
Currents into or out of pins TZERO and TONE in excess of
10 µA must be avoided to prevent damage to the circuit.
Automatic laser shut-down and laser slow start
The laser modulation and bias currents can be rapidly
switched off when a HIGH level (CMOS) is applied to
pin ALS. This function allows the circuit to be shut-down in
the event of an optical system malfunction. A 25 kΩ
pull-down resistor defaults pin ALS to the non active state
(see Fig.11).
When a LOW level is applied to pin ALS, the modulation
and bias currents slowly increase to the desired values at
the typical time constants of τONE and τZERO, respectively.
This can be used to slow-start the laser.
V
handbook, halfpage
ALS
CC(R)
100 Ω
100 Ω
25 kΩ
MGS911
GND
Fig.11 ALS input.
2000 Feb 22
10
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
MGS904
160
I
o(mod)
(mA)
120
(1)
(2)
(3)
(4)
80
(5)
specified range
40
0
1.4
1.9
2.4
2.9
3.4
3.9
V
(V)
TONE
(1) Tj = 25 °C (device with characteristics at upper limit of manufacturing tolerance range).
(2) Tj = 25 °C (typical device).
(3) Tj = −40 °C (typical device).
(4) Tj = 125 °C (typical device).
(5) Tj = 25 °C (device with characteristics at lower limit of manufacturing tolerance range).
Fig.12 Modulation current with variation in Tj and tolerance range in the manufacturing process.
2000 Feb 22
11
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
MGS903
160
(1)
I
O(BIAS)
(mA)
(2)
(3)
(4)
120
(5)
80
specified range
40
0
1.4
1.9
2.4
2.9
3.4
3.9
V
(V)
TZERO
(1) Tj = 25 °C (device with characteristics at upper limit of manufacturing tolerance range).
(2) Tj = 25 °C (typical device).
(3) Tj = −40 °C (typical device).
(4) Tj = 125 °C (typical device).
(5) Tj = 25 °C (device with characteristics at lower limit of manufacturing tolerance range).
Fig.13 Bias current with variation in Tj and tolerance range in the manufacturing process.
2000 Feb 22
12
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
Bias alarm for TZA3001AHL
The bias current alarm circuit detects whenever the bias
current is outside a predefined range, and generates a
flag. This feature can detect excessive bias current due to
laser ageing or laser malfunctioning. The current applied
to pin ALARMHI should be the maximum permitted bias
current value attenuated by a ratio of 1:1500. The current
applied to pin ALARMLO should be the minimum
V
handbook, halfpage
CC(R)
20 Ω
43 Ω
permitted bias current value attenuated by a ratio of 1:300.
ALARM
Like the reference currents for the laser current control
loop, the alarm reference currents can be set by
connecting external resistors between VCC(R) and
pins ALARMHI and ALARMLO (see Fig.8). The resistor
values can be calculated using the following formulae:
MGS909
1.5 × 1500
GND
RALARMHI
=
[Ω ]
(9)
---------------------------------
IO(BIAS)(max)
1.5 × 300
RALARMLO
=
[Ω ]
(10)
-------------------------------
IO
(BIAS)(min)
Fig.14 ALARM output.
Example: The following reference currents are required to
limit the bias current range from 6 to 90 mA:
6 × 10–3
IALARMLO
=
= 20 µA and
= 60 µA
--------------------
300
Accuracy of voltage on inputs: ONE, ZERO,
ALARMLO, ALARMHI
90 × 10–3
------------------------
1500
IALARMHI
=
It is important to consider the accuracy of the 1.5 V level
with respect to VCC(R) on pins ONE and ZERO if resistors
are used to set the reference currents. Although this value
is independent of VCC(R), deviations from 1.5 V can be
caused by:
The corresponding resistor values are:
1.5 × 1500
RALARMHI
=
= 25 kΩ and
---------------------------
90 × 10–3
• Input current: At Tj = 25 °C, the voltage between pin and
VCC varies from 1.58 V at an input current of 6 µA, down
to 1.45 V at 65 µA and 1.41 V at 100 µA. The range
between 65 µA and 100 µA is only specified for
ALARMLO. In the application, the input current is
virtually fixed, so this variation has little effect.
1.5 × 300
6 × 10–3
RALARMLO
=
------------------------
= 75 kΩ
If the alarm condition is true, the voltage on pin ALARM
(see Fig.14) goes to a HIGH level (CMOS). This signal
could be used, for example, to drive pin ALS to disable the
laser driver; the signal to pin ALS has to be latched to
prevent oscillation.
• Variation in batch and individual device characteristics,
not exceeding ±2% from the nominal product: This
variation can be compensated for where devices in the
application are individually trimmed.
A hysteresis of approximately 10% is applied to both alarm
functions. The attenuation ratios of 1:300 and 1:1500 are
valid if the bias current rises above the reference current
levels. If the bias current decreases, the ratios are 10%
lower.
• Temperature: The variation in Tj is shown in Fig.15.
At 30 µA (middle of the specified range) the total
variation in Tj is <1%, at 65 µA it is <2% and at 6 µA it is
<3%.
2000 Feb 22
13
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
MGS901
−1.65
(1)
V
ref
(V)
(2)
−1.60
I
ref =
(3)
6 µA
(4)
−1.55
−1.50
−1.45
−1.40
−1.35
(2)
I
ref =
(3)
30 µA
(4)
(2)
I
ref =
(3)
65 µA
(4)
−50 −40
0
50
100
150
125
T (°C)
j
(1) Referenced to VCC(R)
.
(2) Upper limit of manufacturing tolerance range.
(3) Nominal product.
(4) Lower limit of manufacturing tolerance range.
Fig.15 Vref on pins ONE, ZERO, ALARMLO and ALARMHI with variation in Tj and Iref.
2000 Feb 22
14
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
Loop mode for TZA3001BHL
To maximize power supply isolation, the cathode of the
MPD should be connected to VCC(G) and the anode of the
laser diode should be connected to VCC(B). It is
recommended that the laser diode anode is also
connected to a separate decoupling capacitor C9.
The loop mode allows the total system application to be
tested. It allows for uninhibited optical transmission
through the fibre front-end (from the MPD through the
transimpedance stage and the data and clock recovery
unit, to the laser driver and via the laser back to the fibre).
Note that the optical receiver used in conjunction with the
TZA3001BHL must have a loop mode output in order to
complete the test loop.
Generally, the inverted laser modulation output (pin LAQ)
is not used. To correctly balance the output stage, an
equalization network (Z1) with an impedance comparable
to the laser diode is connected between pin LAQ and
VCC(B)
.
The loop mode is selected by a HIGH level on pin ENL.
By default, pin ENL is pulled to a LOW level by a 25 kΩ
pull-down resistor (see Fig.16).
All external components should be surface mounted
devices, preferably of size 0603 or smaller.
The components must be mounted as close to the IC as
possible.
It is especially recommended to mount the following
components very close to the IC:
• Power supply decoupling capacitors C2, C3 and C4
• Input matching network on pins DIN, DINQ, DLOOP and
DLOOPQ
V
handbook, halfpage
CC(R)
• Capacitor C5 on pin MONIN
• Output matching network Z1 at the unused output
• The laser.
600 Ω
ENL
25 kΩ
Bare die ground
MGS912
In addition to the separate VCC domains, the bare die
contains three corresponding ground (GND) domains.
Isolation between the GND domains is limited due to the
finite substrate conductance.
GND
Mount the die preferably on a large and highly conductive
grounded die pad. All GND pads must be bonded to the
die pad. The external ground is thus ideally combined with
the die ground to avoid ground bounce problems.
Fig.16 ENL input.
Layout recommendations
Power supply connections
Layout recommendations for the TZA3001AHL and
TZA3001BHL can be found in application note “AN98090
Fiber optic transceiverboard STM1/4/8, OC3,12,24,
FC/GE”.
Refer to application diagrams Figs 18 and 19. Three
separate supply domains (labelled VCC(G), VCC(B), and
VCC(R)) provide isolation between the MPD current input,
the high-current outputs, and the PECL or CML inputs.
Each supply domain should be connected to a central VCC
via separate filters as shown in Figs 18 and 19. All supply
pins must be connected. The voltage supply levels
should be equal to, and in accordance with, the values
specified in Chapter “Characteristics”.
2000 Feb 22
15
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCC
Vn
PARAMETER
MIN.
−0.5
MAX.
UNIT
supply voltage
DC voltage on
pin MONIN
+6
V
1.3
V
CC + 0.5
CC + 0.5
V
V
V
V
V
V
V
V
V
V
V
V
pins TONE and TZERO
pin BGAP
−0.5
−0.5
−0.5
1.3
V
+3.2
pin BIAS
VCC + 0.5
pins LA and LAQ
V
CC + 0.5
CC + 0.5
pin ALS
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
V
pins ONE and ZERO
pins DIN and DINQ
VCC + 0.5
V
V
V
V
V
CC + 0.5
CC + 0.5
CC + 0.5
CC + 0.5
CC + 0.5
pin ALARM (TZA3001AHL)
pins ALARMHI and ALARMLO (TZA3001AHL)
pins DLOOP and DLOOPQ (TZA3001BHL)
pin ENL (TZA3001BHL)
DC current on
In
pin MONIN
−0.5
−0.5
−2.0
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−40
+2.5
+0.5
+2.5
+200
+100
+0.5
+0.5
+0.5
+10
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
°C
pins TONE and TZERO
pin BGAP
pin BIAS
pins LA and LAQ
pin ALS
pins ONE and ZERO
pins DIN and DINQ
pin ALARM (TZA3001AHL)
pins ALARMHI and ALARMLO (TZA3001AHL)
pins DLOOP and DLOOPQ (TZA3001BHL)
pin ENL (TZA3001BHL)
ambient temperature
junction temperature
storage temperature
+0.5
+0.5
+0.5
+85
Tamb
Tj
−40
+125
+150
°C
Tstg
−65
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-s)
Rth(j-c)
thermal resistance from junction to solder point
thermal resistance from junction to case
15
23
K/W
K/W
2000 Feb 22
16
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
CHARACTERISTICS
VCC = 4.5 to 5.5 V; Tamb = −40 to +85 °C; all voltages measured with respect to GND.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
supply voltage
4.5
−
5.0
4
5.5
10
V
ICC(R)
ICC(G)
ICC(B)
supply current (R)
supply current (G)
supply current (B)
mA
mA
mA
mA
mA
mA
mW
mW
12
20
−
18
41
3
26
ALS LOW; note 1
ALS HIGH
65
5
ICC(tot)
total supply current
ALS LOW; note 1
ALS HIGH
32
12
145
50
63
25
430
125
101
41
Ptot
total power dissipation
ALS LOW; note 2
ALS HIGH; note 2
925
225
Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3001BHL); (see Fig.17)
Vi(p-p)
input voltage
single-ended
100
250
800
mV
(peak-to-peak value)
VIO
input offset voltage
minimum input voltage
maximum input voltage
input impedance
−25
−
+25
mV
V
VI(min)
VI(max)
Zi
V
−
7
CC(R) − 2
−
−
−
VCC(R) + 0.25 V
for low frequencies;
single-ended
10
13
kΩ
CMOS inputs: pin ALS (and pin ENL on TZA3001BHL)
VIL
LOW-level input voltage
HIGH-level input voltage
−
−
−
2
V
VIH
3
−
V
Rpd(ALS)
internal pull-down
21
25.5 30
kΩ
resistance on pin ALS
Rpd(ENL)
internal pull-down
15
25
35
kΩ
resistance on pin ENL
CMOS output: pin ALARM (on TZA3001AHL)
VOL
VOH
LOW-level output voltage IOH = −200 µA
HIGH-level output voltage IOH = 200 µA
0
−
−
0.2
V
V
V
CC − 0.2
VCC
Monitor photodiode input: pin MONIN
VI
DC input voltage
1.2
24
96
30
1.8
−
2.4
V
IMPD
monitor photodiode
current
laser optical 0
laser optical 1
note 3
260
1040
50
µA
µA
pF
−
CMPD
monitor photodiode
capacitance
−
2000 Feb 22
17
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Control loop reference current inputs: pins ONE and ZERO
Iref(ONE)
Vref(ONE)
α(ONE)
reference current on
pin ONE
note 4
6
−
−
6
−
−
−
65
−
µA
V
reference voltage on
pin ONE
referenced to VCC(R)
note 5
;
−1.5
16
−
attenuation ratio of Iref(ONE) note 6
to IMPD(ONE)
−
−
Iref(ZERO)
Vref(ZERO)
α(ZERO)
reference current on
pin ZERO
note 4
65
−
µA
V
reference voltage on
pin ZERO
referenced to VCC(R)
note 5
;
−1.5
4
attenuation ratio of
note 6
−
−
Iref(ZERO) to IMPD(ZERO)
Control loop time constants: pins TONE and TZERO
VTONE
voltage on pin TONE
floating output
note 7
1.4
60
−
3.4
V
gm(TONE)
transconductance of
pin TONE
95
130
mA/V
VTZERO
voltage on pin TZERO
floating output
note 8
1.4
−
3.4
V
gm(TZERO)
transconductance of
pin TZERO
100
145
190
mA/V
Laser modulation current outputs: pins LA and LAQ
Io(mod)(on)
modulation output current note 9
(active pin)
2.5
−
60
mA
Io(mod)(off)
modulation output current Io(mod)(on) = 30mA
(inactive pin)
−
−
−
−
−
−
0.5
2.8
10
mA
mA
µA
I
o(mod)(on) = 60mA
Io(mod)(ALS)
output current during laser
shutdown
VO
output voltage
current rise time
current fall time
2
−
−
−
−
5
V
tr
note 10
note 10
note 11
120
120
−
300
300
50
ps
ps
mUI
tf
Jo(p-p)
intrinsic electrical output
jitter (peak-to-peak value)
Laser bias current output: pin BIAS
IO(BIAS)
bias output current
note 12
2.8
−
−
90
10
mA
IO(BIAS)(ALS)
output current during laser
shutdown
−
µA
tres(off)
response time after laser IO(BIAS) = 90 mA; note 13
shutdown
−
−
−
1
5
µs
VO(BIAS)
bias output voltage
1
V
2000 Feb 22
18
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Alarm reference current inputs: pins ALARMHI and ALARMLO (TZA3001AHL)
Iref(ALARMLO)
Vref(ALARMLO)
α(ALARMLO)
reference current on
pin ALARMLO
note 14
6
−
100
−
µA
reference voltage on
pin ALARMLO
referenced to VCC(R)
note 15
−
−1.5
315
10
V
attenuation ratio of
Iref(ALARMLO) to IO(BIAS)(min)
200
7.5
6
400
15
65
−
IO(BIAS)(min)(hys) minimum bias current
detection hysteresis
%
µA
V
Iref(ALARMHI)
Vref(ALARMHI)
α(ALARMHI)
reference current on
pin ALARMHI
note 14
−
reference voltage on
pin ALARMHI
referenced to VCC(R)
note 15
−
−1.5
attenuation ratio of
Iref(ALARMHI) to IO(BIAS)(max)
1300
7.5
1500 1700
10 15
IO(BIAS)(max)(hys) maximum bias current
detection hysteresis
%
Reference voltage output: pin BGAP
VO
output voltage
1.165
1.20 1.235
µA
Notes
1. Supply current:
a) The values do not include the modulation and bias currents through pins LA, LAQ and BIAS.
b) Minimum value refers to VTONE = 1.4 V at Io(mod)(min) and VTZERO = 1.4 V at IO(BIAS)(min)
c) Maximum value refers to VTONE = 3.4 V at Io(mod)(max) and VTZERO = 3.4 V at IO(BIAS)(max)
.
.
d) A first order estimate of the typical value of ICC(tot) as a function of Tj, Io(mod), and IO(BIAS) is:
Tj[°C]
ICC(tot) = 55.6 mA + 0.0015 × IO(BIAS)[mA] × Io(mod)(on)[mA] × 1 – 0.026 ×
.
----------------
25
2. Power dissipation:
a) The value for Ptot includes the modulation and bias currents through pins LA, LAQ and BIAS.
b) The minimum value for Ptot is the on-chip dissipation when VTONE = 1.4 V at Io(mod)(min), VLA = VLAQ = 2 V,
VTZERO = 1.4 V at IO(BIAS)(min), VO(BIAS) = 1 V, and parameter processes are at a minimum.
c) The maximum value for Ptot is the on-chip dissipation when VTONE = 3.4 V at Io(mod)(max), VLA = VLAQ = 2 V,
VTZERO = 3.4 V at IO(BIAS)(max), VO(BIAS) = 1 V, and parameter processes are at a maximum.
d) Ptot = ICC(tot) × VCC + IO(BIAS) × VO(BIAS) + ILA × VLA with Io(mod)(on) flowing through pin LA.
3. The minimum value of the capacitance on pin MONIN is required to prevent instability.
4. The reference currents can be set by connecting external resistors between VCC and pins ONE and ZERO
(see Section “Automatic laser control”). The corresponding MPD current range for optical 1 is from 96 to 1040 µA.
The MPD current range for optical 0 is from 24 to 260 µA.
5. See Section “Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI”.
6. See Section “Automatic laser control”.
7. The specified transconductance is the ratio between the modulation current on pins LA or LAQ and the voltage on
pin TONE, under small signal conditions.
2000 Feb 22
19
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
8. The specified transconductance is the ratio between the bias current on pin BIAS and the voltage on pin TZERO,
under small signal conditions.
9. These are the guaranteed values; the lowest attainable output current will always be lower than 2.5 mA, and the
highest output current will always be higher than 60 mA.
10. The voltage rise and fall times (20% to 80%) can have larger values due to capacitive effects. Specifications are
guaranteed by design and characterization. Each device is tested at full operating speed to guarantee RF
functionality.
11. Measured in a frequency band from 250 kHz to 5 MHz, according to “ITU-T Recommendation G.813”.
The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification
is guaranteed by design.
12. These are the guaranteed values; the lowest output current will always be less than 2.8 mA and the highest output
current will always be more than 90 mA.
13. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH-level) and
the extinction of the bias current (at 10% of the original value).
14. The reference currents can be set by connecting a resistor between pin ALARMLO and VCC(R) and between
pin ALARMHI and VCC(R); for detailed information, see Section “Bias alarm for TZA3001AHL”. The corresponding
low-bias threshold range is 1.8 to 19.5 mA. The high-bias threshold range is 9 to 97.5 mA.
15. See Section “Bias alarm for TZA3001AHL”.
V
I(max)
V
CC(R)
V
i(p-p)
V
IO
V
I(min)
MGK274
Fig.17 Logic level symbol definitions for data inputs.
2000 Feb 22
20
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
APPLICATION INFORMATION
(1)
C2
22 nF
(1)
V
CC
C3
22 nF
C1
1 µF
(1)
C4
22 nF
data inputs
normal mode
(CML/PECL compatible)
4
V
V
V
ALS DINQ DIN
ALARM
26
CC(G) CC(B) CC(R)
(2)
(5)
(5)
(6)
(6)
C5
R1
R2
R3
R4
7
10
19, 20,
27, 30
31
29
28
MONIN
ZERO
2
23
22
ONE
(3)
(4)
C6
TONE
4
5
6
TZA3001AHL
C7
TZERO
ALARMLO
ALARMHI
21
18
1, 3, 8, 9, 11,
14, 16, 17,
24, 25, 32
C8
22 nF
BGAP
15
BIAS
13
LA
12
GND
11
LAQ
R5
18 Ω
(7)
Z1
L1
C9
MGK276
MPD
laser
(1) Ferrite bead e.g. Murata BLM31A601S.
(2) C5 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”).
(3) C6 enhances modulation control loop time constant (optional).
(4) C7 enhances bias control loop time constant (optional).
(5) R1 and R2 are used for setting optical 0 and optical 1 reference currents (see Section “Automatic laser control”).
(6) R3 and R4 are used for setting minimum and maximum bias currents (see Section “Bias alarm for TZA3001AHL”).
(7) Z1 is required for balancing the output stage (see Section “Power supply connections”).
Fig.18 Application diagram showing the TZA3001AHL configured for 622 Mbits/s (STM4/OC12).
2000 Feb 22
21
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
(1)
C2
22 nF
(1)
V
CC
C3
22 nF
C1
1 µF
(1)
C4
22 nF
data inputs
normal mode
(CML/PECL compatible)
4
V
V
V
ALS
DINQ DIN
ENL
26
CC(G) CC(B) CC(R)
(2)
(5)
(5)
C5
R1
R2
7
10
18, 21,
27, 30
31
29
28
MONIN
ZERO
2
23
22
ONE
(3)
(4)
C6
TONE
4
5
6
TZA3001BHL
C7
TZERO
DLOOPQ
DLOOP
20
19
loop mode inputs
(CML/PECL
1, 3, 8, 9, 11,
14, 16, 17,
24, 25, 32
C8
22 nF
BGAP
compatible)
15
BIAS
13
LA
12
GND
11
LAQ
R3
18 Ω
(6)
Z1
L1
C9
MGK275
MPD
laser
(1) Ferrite bead e.g. Murata BLM31A601S.
(2) C5 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”).
(3) C6 enhances modulation control loop time constant (optional).
(4) C7 enhances bias control loop time constant (optional).
(5) R1 and R2 are used for setting optical 0 and optical 1 reference currents (see Section “Automatic laser control”).
(6) Z1 is required for balancing the output stage (see Section “Power supply connections”).
Fig.19 Application diagram showing the TZA3001BHL configured for 622 Mbits/s (STM4/OC12).
2000 Feb 22
22
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
BONDING PAD LOCATIONS
COORDINATES(1)
COORDINATES(1)
SYMBOL
PAD
x
y
SYMBOL
PAD
x
y
VCC(R)
DLOOP
DLOOPQ
VCC(R)
ALARMLO
ONE
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
+384
+227
+87
+910
+910
+910
+910
+910
+910
+910
+910
+681
+541
+384
+227
+70
GND
1
2
−664
−524
−367
−227
−70
−910
−910
−910
−910
−910
−910
−910
−910
−910
−910
−630
−490
−350
−210
−70
MONIN
GND
3
−70
IGM
4
−210
−367
−524
−681
−910
−910
−910
−910
−910
−910
−910
−910
−910
−910
TONE
TZERO
BGAP
VCC(G)
VCC(G)
GND
5
6
+87
ZERO
GND
7
+244
+384
+524
+664
+910
+910
+910
+910
+910
+910
+910
+910
+910
+910
+681
+541
8
GND
9
ALARM
ENL
10
11
12
13
14
15
16
17
18
19
20
21
22
GND
VCC(R)
DIN
VCC(B)
VCC(B)
GND
DINQ
VCC(R)
ALS
−70
−227
−367
−551
−664
LAQ
LA
+70
GND
GND
+210
+350
+490
+630
+910
+910
GND
BIAS
Note
GND
1. All x and y coordinates represent the position of the
centre of the pad in µm with respect to the centre of the
die (see Fig.20).
GND
GND
ALARMHI
2000 Feb 22
23
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
(1)
2 mm
30 29 28 27 26
31
25 24 23 22 21
20
GND
ALARM
ENL
GND
GND
BIAS
GND
LA
32
33
34
35
19
18
17
16
V
CC(R)
DIN
(1)
x
0
2 mm
0
y
DINQ
LAQ
36
37
38
39
40
15
14
13
12
11
V
GND
V
CC(R)
ALS
GND
GND
CC(B)
TZA3001U
V
CC(B)
GND
1
2
3
4
5
6
7
8
9
10
MGL192
(1) Typical value.
Fig.20 Bonding pad locations of TZA3001U.
Table 1 Physical characteristics of bare die
PARAMETER
VALUE
Glass passivation
Bonding pad dimension
Metallization
Thickness
2.1 µm PSG (PhosphoSilicate Glass) on top of 0.7 µm silicon nitride
minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)
1.2 µm AlCu (1% Cu)
380 µm nominal
Size
2.000 × 2.000 mm (4.000 mm2)
Backing
silicon; electrically connected to GND potential through substrate contacts
<430 °C; glue is recommended for attaching die
<15 s
Attach temperature
Attach time
2000 Feb 22
24
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
PACKAGE OUTLINE
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
SOT401-1
c
y
X
A
E
17
24
Z
16
25
E
e
A
H
2
E
A
(A )
3
A
1
w M
p
θ
pin 1 index
b
L
p
32
9
L
1
8
detail X
Z
v M
D
A
e
w M
b
p
D
B
H
v M
B
D
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
D
H
L
L
v
w
y
Z
Z
E
θ
1
2
3
p
E
p
D
max.
7o
0o
0.15 1.5
0.05 1.3
0.27 0.18 5.1
0.17 0.12 4.9
5.1
4.9
7.15 7.15
6.85 6.85
0.75
0.45
0.95 0.95
0.55 0.55
mm
1.60
0.25
0.5
1.0
0.2 0.12 0.1
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
99-12-27
00-01-19
SOT401-1
136E01
MS-026
2000 Feb 22
25
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Feb 22
26
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
REFLOW(1)
PACKAGE
WAVE
BGA, LFBGA, SQFP, TFBGA
HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable(2)
PLCC(3), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
not suitable
suitable
suitable
suitable
suitable
suitable
suitable
not recommended(3)(4)
not recommended(5)
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Feb 22
27
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors
has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips
Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing,
handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in
which the die is used.
2000 Feb 22
28
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
NOTES
2000 Feb 22
29
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
NOTES
2000 Feb 22
30
Philips Semiconductors
Product specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
NOTES
2000 Feb 22
31
Philips Semiconductors – a worldwide company
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/150/05/pp32
Date of release: 2000 Feb 22
Document order number: 9397 750 06893
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The TZA3001AHL, TZA3001BHL and TZA3001U are fully integrated laser drivers for STM4/OC12 (622 Mbits/s) systems, incorporating the
RF path between the data multiplexer and the laser diode. Since the dual loop bias and modulation control circuits are integrated on the IC,
the external component count is low. Only decoupling capacitors and adjustment resistors are required.
PC/PC-peripherals
Cross reference
The TZA3001AHL features an alarm function for signalling extreme bias current conditions. The alarm low and high threshold levels can be
adjusted to suit the application using only a resistor or a current Digital-to-Analog Converter (DAC).
Models
Packages
The TZA3001BHL is provided with an additional RF data input to allow remote system testing (loop mode).
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
The TZA3001U is a bare die version for use in compact laser module designs. The die contains 40 pads and features the combined
functionality of the TZA3001AHL and the TZA3001BHL.
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l 622 Mbits/s data input, both Current Mode Logic (CML) and Positive Emitter Coupled Logic (PECL) compatible; maximum 800 mV (p-p)
l Adaptive laser output control with dual loop, stabilizing optical 1 and 0 levels
l Optional external control of laser modulation and biasing currents (non-adaptive)
l Automatic laser shutdown
l Few external components required
TZA3001AHL;
TZA3001BHL; TZA3001U
TZA3001AHL;
TZA3001BHL; TZA3001U
l Rise and fall times of 120 ps (typical value)
l Jitter P50 mUI (p-p)
l RF output current sinking capability of 60 mA
l Bias current sinking capability of 90 mA
l Power dissipation of 430 mW (typical value)
l Low cost LQFP32 5 X 5 plastic package
l Single 5 V power supply.
TZA3001AHL
l Laser alarm output for signalling extremely low and high bias current conditions.
TZA3001BHL
¡ Extra STM4 622 Mbits/s loop mode input; both CML and PECL compatible.
TZA3001U
¡ Bare die version with combined bias alarm and loop mode functionality.
Applications
¡ SDH/SONET STM4/OC12 optical transmission systems
¡ SDH/SONET STM4/OC12 optical laser modules.
Datasheet
File
size
(kB)
Publication
release date Datasheet status
Page
count
Type nr.
Title
Datasheet
Download
TZA3001AHL;
TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser
drivers
22-Feb-00
Product
Specification
32
137
Products, packages, availability and ordering
North American
Partnumber
Order code
(12nc)
buy
online
Partnumber
marking/packing
package device status
SOT401 Full production
SOT401 Development
SOT401 Full production
Standard Marking * Reel Pack,
SMD, 13"
TZA3001AHL/C4
TZA3001BHL/C1
9352 638 39118
-
-
Standard Marking * Tray Dry Pack,
Bakeable, Single
9352 603 71551
9352 638 34118
Standard Marking * Reel Pack,
SMD, 13"
TZA3001BHL/C4
TZA3001U/C4
-
-
9352 638 40026 No Marking * Die In Waffle Carriers NONE
Full production
Please read information about some discontinued variants of this product.
Find similar products:
TZA3001AHL; TZA3001BHL; TZA3001U links to the similar products page containing an overview of products that are similar
in function or related to the part number(s) as listed on this page. The similar products page includes products from the same
catalog tree(s) , relevant selection guides and products from the same functional category.
Copyright © 2000
Royal Philips Electronics
All rights reserved.
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