TZA3011A [ETC]
30 Mbits/s up to 3.2 Gbits/s A-rate(TM) laser drivers ; 30兆位/秒高达3.2 Gb / s的A-率（ TM ）的激光驱动器\n
| 型号： | TZA3011A |
| 厂家： | 
ETC |
| 描述： | 30 Mbits/s up to 3.2 Gbits/s A-rate(TM) laser drivers
|
| 文件： | 总28页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TZA3011A; TZA3011B
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
Product specification
2003 Apr 02
Supersedes data of 2002 Nov 06
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
CONTENTS
11
12
AC CHARACTERISTICS
APPLICATION INFORMATION
FEATURES
12.1
Design equations
1.1
1.2
1.3
General
Control features
Protection features
12.1.1
12.1.2
12.1.3
12.1.4
12.1.5
12.1.6
12.2
Bias and modulation currents
Average monitor current and extinction ratio
Dual-loop control
Alarm operating current
Alarm monitor current
2
3
4
5
6
7
APPLICATIONS
GENERAL DESCRIPTION
ORDERING INFORMATION
BLOCK DIAGRAM
Pulse width adjustment
TZA3011A with dual-loop control
TZA3011B with dual-loop control
TZA3011B with average loop control
12.3
12.4
PINNING
FUNCTIONAL DESCRIPTION
13
BONDING PAD LOCATIONS
PACKAGE OUTLINE
SOLDERING
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
Data and clock input
Retiming
14
15
Pulse width adjustment
Modulator output stage
Dual-loop control
Average loop control
Direct current setting
Soft start
Alarm functions
Enable
Reference block
15.1
Introduction to soldering surface mount
packages
Reflow soldering
Wave soldering
Manual soldering
15.2
15.3
15.4
15.5
Suitability of surface mount IC packages for
wave and reflow soldering methods
16
17
18
DATA SHEET STATUS
DEFINITIONS
8
LIMITING VALUES
DISCLAIMERS
9
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
10
2003 Apr 02
2
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
1
FEATURES
General
1.3
Protection features
1.1
• Alarm function on operating current
• A-rate (1) from 30 Mbits/s to 3.2 Gbits/s
• Bias current up to 100 mA
• Alarm function on monitor current
• Enable function on bias and modulation currents
• Soft start on bias and modulation currents.
• Modulation current up to 100 mA
• Rise and fall times typical 80 ps
2
APPLICATIONS
• Jitter below 20 ps (peak-to-peak value)
• Modulation output voltage up to 2 V dynamic range
• SDH/SONET optical transmission systems
• High current drivers for converters
• 1.2 V minimum voltage on the modulation output pin and
0.4 V minimum voltage on pin BIAS
• High current drivers for high frequencies.
• Retiming function via external clock with disable option
• Pulse width adjustment function with disable option
3
GENERAL DESCRIPTION
• Positive Emitter Coupled Logic (PECL), Low Voltage
Positive Emitter Coupled Logic (LVPECL) and
Current-Mode Logic (CML) compatible data and clock
inputs
The TZA3011 is a fully integrated laser driver for optical
transmission systems with data rates up to 3.2 Gbits/s.
The TZA3011 incorporates all the necessary control and
protection functions for a laser driver application with very
few external components required and low power
dissipation. The dual-loop controls the average monitor
current in a programmable range from 150 µA to 1300 µA
and the extinction ratio in a programmable range from
5 to 15 (linear scale).
• Internal common mode voltage available for AC-coupled
data and clock inputs and for single-ended applications
• 3.3 V supply voltage
• TZA3011A: AC-coupled laser for 3.3 V laser supply
• TZA3011B: DC-coupled laser for 3.3 V and 5 V laser
supply.
The design is made in the Philips BiCMOS RF process
and is available in a HBCC32 package or as bare die. The
TZA3011A is intended for use in an application with an
AC-coupled laser diode with a 3.3 V laser supply voltage.
The TZA3011B is intended for use in an application with a
DC-coupled laser diode for both 3.3 and 5 V laser supply
voltages.
1.2
Control features
• Dual-loop control for constant and accurate optical
average power level and extinction ratio (up to
2.7 Gbits/s)
• Optional average power loop control (up to 3.2 Gbits/s)
• Optional direct setting of modulation and bias currents.
(1) A-rate - is a trademark of Koninklijke Philips Electronics N.V.
4
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
TZA3011AVH
TZA3011BVH
TZA3011UH
HBCC32 plastic heatsink bottom chip carrier; 32 terminals;
SOT560-1
body 5 × 5 × 0.65 mm
−
bare die; 2 560 × 2510 × 380 µm
−
2003 Apr 02
3
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
5
BLOCK DIAGRAM
ACDC
MODOUT MODIN BIASOUT BIASIN
MON
AVR
ER
GNDCCB
32 (57) 31 (56)
(51, 53)
30 (55)
29 (52)
28 (50)
27 (49)
26 (48)
(46)
(44, 45) 25
V
CCO
I
BIAS
100 µA
100 µA
1 (1, 2)
(43) 24
V
V
CCA
BIAS
dual loop: I
= 1.2 V/R
ER
V/I
ER
average loop: ER = GND
2 (3, 4)
CURRENT
CONVERSION
100
mA/V
CCD
23
I
I
one
zero
GND
V/I
100
mA/V
CONTROL BLOCK
I
100
Ω
100
Ω
MON
(40, 41) 22
(37, 39) 21
(31, 32) 20
(29, 30) 19
LA
LA
3 (5)
LAQ
LAQ
DIN
20
kΩ
100
Ω
PRE
AMP
POST
AMP
PULSE
WIDTH
ADJUST
18
4 (6)
GND
DINQ
TEST
CIN
(28, 33,
35, 36, 42)
MUX
20
kΩ
5 (11)
6 (12)
I
GNDO
mod
D
C
FF
(7, 8, 9,
10, 26)
(27) 17
20
kΩ
100
Ω
PWA
GNDRF
CINQ
7 (13)
disable retiming:
V
V
< 0.3 V
CIN, CINQ
20
kΩ
8
GND
TZA3011A
TZA3011B
(14, 47)
9 (15)
GNDESD
ALRESET
V
− 1.32 V
CCD
(20, 22,
34, 38, 54)
i.c.
10
kΩ
1.4 V
I
/12.5
av(MON)
I
/750
BIAS
R
Q
R
Q
ALARM
OPERATING
CURRENT
ALARM
MONITOR
CURRENT
3.3 V
V AND I
REFERENCE
I
/1500
mod
+
20
kΩ
1.4 V
(26)
enable
(17)
GNDRF
10 (16)
ENABLE
11 (18)
12 (19)
ALMON
13 (21) 14 (23)
15 (24) 16 (25)
MGT888
GNDDFT
ALOP
MAXOP VTEMP MAXMON RREF
The numbers in parenthesis refer to the bare die version
Fig.1 Block diagram.
4
2003 Apr 02
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
6
PINNING
SYMBOL
PIN
PAD(1)
DESCRIPTION
GND
die pad substrate common ground plane for VCCA, VCCD, VCCO, RF and I/O; must be connected to
ground
VCCA
1
−
1
2
analog supply voltage
VCCA
analog supply voltage
VCCD
2
3
digital supply voltage
VCCD
−
4
digital supply voltage
DIN
3
5
non-inverted data input (RF input)
inverted data input (RF input)
ground
DINQ
4
6
GNDRF
GNDRF
GNDRF
GNDRF
TEST
−
7
−
8
ground
−
9
ground
−
10
11
12
13
−
ground
5
test pin or test pad; must be connected to ground
non-inverted clock input (RF input)
inverted clock input (RF input)
ground
CIN
6
CINQ
7
GND
8
GNDESD
ALRESET
ENABLE
GNDDFT
ALOP
−
14
15
16
17
18
19
20
21
22
23
24
25
ground
9
alarm reset input; resets ALMON and ALOP alarms
enable input for modulation and bias current
ground
10
−
11
12
−
alarm output on operating current (open-drain)
alarm output on monitor diode current (open-drain)
internally connected
ALMON
i.c.
MAXOP
i.c.
13
−
threshold level input for alarm on operating current
internally connected
VTEMP
MAXMON
RREF
14
15
16
temperature dependent voltage output source
threshold level input for alarm on monitor diode current
reference current input; must be connected to ground with an accurate (1%)
10 kΩ resistor
GNDRF
PWA
GND
GNDO
LAQ
−
17
18
−
26
27
−
ground
pulse width adjustment input
ground
28
29
30
31
32
33
34
35
ground
19
−
inverted laser modulation output (RF output); output for dummy load
inverted laser modulation output (RF output); output for dummy load
inverted laser modulation output (RF output); output for dummy load
inverted laser modulation output (RF output); output for dummy load
ground
LAQ
LAQ
20
−
LAQ
GNDO
i.c.
−
−
internally connected
GNDO
−
ground
2003 Apr 02
5
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
SYMBOL
GNDO
PIN
PAD(1)
DESCRIPTION
−
21
−
36
37
38
39
40
41
−
ground
LA
non-inverted laser modulation output (RF output); output for laser
internally connected
i.c.
LA
−
non-inverted laser modulation output (RF output); output for laser
non-inverted laser modulation output (RF output); output for laser
non-inverted laser modulation output (RF output); output for laser
ground
LA
22
−
LA
GND
23
−
GNDO
BIAS
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
ground
24
25
−
current source output for the laser bias current
supply voltage for the output stage and the laser diode
supply voltage for the output stage and the laser diode
AC or DC coupled laser; note 2
VCCO
VCCO
ACDC
GNDESD
MON
−
−
ground
26
27
28
−
input for the monitor photo diode (RF input)
input for the bias current setting
BIASIN
BIASOUT
GNDCCB
MODIN
GNDCCB
i.c.
output of the control block for the bias current
ground
29
−
input for the modulation current setting
ground
−
internally connected
MODOUT
ER
30
31
32
output of the control block for the modulation current
input for the optical extinction ratio setting
input for the optical average power level setting
AVR
Notes
1. All ground pads must be connected to ground.
2. ACDC pad must be left unconnected for AC-coupling applications. For DC-coupling applications, connect this pad to
ground.
2003 Apr 02
6
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
V
V
1
32 31 30 29 28 27 26
25
CCA
2
3
4
5
6
7
8
24
23
22
21
20
19
18
BIAS
CCD
DIN
GND
LA
DINQ
TEST
CIN
TZA3011A
TZA3011B
LA
LAQ
LAQ
GND
CINQ
GND
9
10 11 12 13 14 15 16
17
PWA
MGT889
Fig.2 Pin configuration.
7
FUNCTIONAL DESCRIPTION
Data and clock input
7.3
Pulse width adjustment
7.1
The on-duration of the laser current can be adjusted from
−100 to +100 ps. The adjustment time is set by resistor
RPWA. The maximum allowable capacitive load on pin
PWA is 100 pF. Pulse width adjustment is disabled when
pin PWA is short-circuited to ground.
The TZA3011 operates with differential Positive Emitter
Coupled Logic (PECL), Low Voltage Positive Emitter
Coupled Logic (LVPECL) and Current-Mode Logic (CML)
data and clock inputs with a voltage swing from 100 mV to
1 V (p-p). It is assumed that both the data and clock inputs
carry a complementary signal with the specified
7.4
Modulator output stage
peak-to-peak value (true differential excitation).
The output stage is a high-speed bipolar differential pair
with typical rise and fall times of 80 ps and with a
modulation current source of up to 100 mA when the LA
The circuit generates an internal common mode voltage
for AC-coupled data and clock inputs and for single-ended
applications.
pins are connected to VCCO
.
The modulation current switches between the LA and LAQ
outputs. For a good RF performance the inactive branch
carries a small amount of the modulation current.
If VDIN > VDINQ, the modulation current is sunk by the LA
pins and corresponds to an optical ‘one’ level of the laser.
7.2
Retiming
The LA output is optimized for the laser allowing a 2 V
dynamic range and a 1.2 V minimum voltage. The LAQ
output is optimized for the dummy load.
The retiming function synchronizes the data with the clock
to improve the jitter performance. The data latch switches
on the rising edge of the clock input. The retiming function
is disabled when both clock inputs are below 0.3 V.
The output stage of the TZA3011A is optimized for
AC-coupled lasers and the output stage of the TZA3011B
is optimized for DC-coupled lasers.
At start-up the initial polarity of the laser is unknown before
the first rising edge of the clock input.
The BIAS output is optimized for low voltage requirements
(0.4 V minimum for a 3.3 V laser supply; 0.8 V minimum
for a 5 V laser supply).
2003 Apr 02
7
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
7.5
Dual-loop control
7.9
Alarm functions
The TZA3011 incorporates a dual-loop control for a
constant, accurate and temperature-independent control
of the optical average power level and the extinction ratio.
The dual-loop guarantees constant optical ‘one’ and ‘zero’
levels which are independent of the laser temperature and
the laser age.
The TZA3011 features two alarm functions for the
detection of excessive laser operating current and monitor
diode current due to laser ageing, laser malfunctioning or
a too high laser temperature. The alarm threshold levels
are programmed by a resistor or a current source. In the
TZA3011A, for the AC-coupled application, the operating
current is equal to the bias current. In the TZA3011B, for
the DC-coupled application, the operating current equals
the bias current plus half of the modulation current.
The dual-loop operates by monitoring the current of the
monitor photodiode which is directly proportional to the
laser emission. The ‘one’ and ‘zero’ current levels of the
monitor diode are captured by the detector of the dual-loop
control. The pin MON for the monitor photodiode current is
an RF input.
7.10 Enable
A LOW level on the enable input disables the bias and
modulation current sources: the laser is off. A HIGH level
on the enable input or an open enable input switches both
current sources on: the laser is operational.
The average monitor current is programmable over a wide
current range from 150 to 1300 µA for both the dual-loop
control and the average loop control. The extinction ratio is
programmable from 5 to 15.
7.11 Reference block
The maximum allowable capacitive load on pins AVR, ER,
BIASOUT and MODOUT is 100 pF.
The reference voltage is derived from a band gap circuit
and is available at pin RREF. An accurate (1%) 10 kΩ
resistor has to be connected to pin RREF to provide the
internal reference current. The maximum capacitive load
on pin RREF is 100 pF.
7.6
Average loop control
The average power control loop maintains a constant
average power level of the monitor current over
temperature and lifetime of the laser. The average loop
control is activated by short-circuiting pin ER to ground.
The reference voltage on the setting pins (MAXOP,
MAXMON, PWA, ER and AVR) is buffered and derived
from the band gap voltage.
7.7
Direct current setting
The output voltage on pin VTEMP reflects the junction
temperature of the TZA3011, the temperature coefficient
of VVTEMP equals −2.2 mV/K.
The TZA3011 can also operate in open-loop mode with
direct setting of the bias and modulation currents. The bias
and modulation current sources are transconductance
amplifiers and the output currents are determined by the
BIASIN and MODIN voltages respectively. The bias
current source has a bipolar output stage with minimum
output capacitance for optimum RF performance.
7.8
Soft start
At power-up the bias and modulation current sources are
released when VCCA > 2.7 V and the reference voltage has
reached the correct value of 1.2 V.
The control loop starts with minimum bias and modulation
current at power-up and when the device is enabled. The
current levels increase until the MON input current
matches the programmed average level and, in the case
of dual-loop control, the extinction ratio.
2003 Apr 02
8
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
8
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to ground; positive
currents flow into the IC.
SYMBOL
PARAMETER
digital supply voltage
CONDITION
MIN.
−0.5
MAX.
UNIT
VCCD
VCCA
VCCO
+3.5
+3.5
+3.5
+5.3
4.5
V
V
V
V
V
V
V
V
V
V
V
V
V
analog supply voltage
−0.5
−0.5
output stage supply voltage
3.3 V laser supply
5 V laser supply (TZA3011B only) −0.5
Vo(LA)
Vo(LAQ)
VBIAS
Vn
output voltage at pin LA
output voltage at pin LAQ
bias voltage
TZA3011A; VCCO = 3.3 V
TZA3011B; VCCO = 3.3 V
TZA3011B; VCCO = 5 V
TZA3011A; VCCO = 3.3 V
TZA3011B; VCCO = 3.3 V
TZA3011B; VCCO = 5 V
TZA3011A; VCCO = 3.3 V
TZA3011B; VCCO = 3.3 V
TZA3011B; VCCO = 5 V
1.2
0.8
1.2
1.8
1.6
2.0
0.4
0.4
0.8
4.1
4.5
4.5
4.5
5.2
3.6
3.6
4.1
voltage on other input and output
pins
analog inputs and outputs
digital inputs and outputs
input current on pins
−0.5
−0.5
V
CCA + 0.5
CCD + 0.5
V
V
V
In
MAXOP, MAXMON, RREF, PWA,
ER and AVR
−1.0
0
mA
VTEMP, BIASOUT and MODOUT
ALOP, ALMON and MON
ambient temperature
−1.0
0
+1.0
5.0
mA
mA
°C
Tamb
Tj
−40
−40
−65
+85
junction temperature
+125
+150
°C
Tstg
storage temperature
°C
9
THERMAL CHARACTERISTICS
In compliance with JEDEC standards JESD51-5 and JESD51-7.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to 4 layer printed circuit board in still
35
K/W
ambient
air with 9 plated vias connected
with the heatsink and the first
ground plane in the PCB
HBCC32 die pad soldered to
PCB
60
K/W
2003 Apr 02
9
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
10 DC CHARACTERISTICS
Tamb = −40 to +85 °C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V;
CCO = 3.14 to 3.47 V; RAVR = 7.5 kΩ; RER = 62 kΩ; RMODIN = 6.2 kΩ; RBIASIN = 6.8 kΩ; RPWA = 10 kΩ; RRREF = 10 kΩ;
MAXMON = 13 kΩ; RMAXOP = 20 kΩ; positive currents flow into the IC; all voltages are referenced to ground; unless
V
R
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Supplies: pins VCCA, VCCD and VCCO
VCCA
VCCD
VCCO
analog supply voltage
digital supply voltage
3.14
3.3
3.3
3.3
5.0
40
3.47
3.47
3.47
5.25
50
V
3.14
3.14
4.75
30
V
RF output supply voltage 3.3 V laser supply
5 V laser supply
V
V
ICCA
ICCD
ICCO
analog supply current
mA
mA
digital supply current
35
45
55
RF output supply current
pins LA and LAQ open-circuit
3.3 V laser supply
5 V laser supply
8
−
−
15
25
−
mA
mA
mW
20
Pcore
core power dissipation
total power dissipation
core excluding output currents
Io(LA), Io(LAQ) and IBIAS; PWA and
retiming off
264
−
Ptot
VBIAS = 3.3 V; IBIAS = 20 mA;
Imod = 16 mA; note 1
330
400
500
mW
Data and clock inputs: pins DIN and CIN
Vi(p-p)
input voltage swing
(peak-to-peak value)
Vi(DIN) = (VCCD − 2 V) to VCCD;
Vi(CIN) = (VCCD − 2 V) to VCCD
100
−
1000 mV
Vint(cm)
internal common mode
voltage
AC-coupled inputs
−
VCCD − 1.32 −
V
VIO
input offset voltage
note 2
−10
0
+10
125
mV
Zi(dif)
differential input
impedance
80
100
10
−
Ω
Zi(cm)
common mode input
impedance
8
13
kΩ
Vi(CIN)(dis)
input voltage for disabled VCIN = VCINQ
retiming
−
0.3
V
Monitor photodiode input: pin MON
Vi(MON)
Zi(MON)
input voltage
IMON = 50 to 2500 µA
IMON = 50 to 2500 µA
0.9
1.1
27
1.3
V
input impedance
−
−
Ω
Extinction ratio setting for dual-loop control: pins MON and ER
ERmin
low extinction ratio setting dual-loop set-up; IER > −30 µA;
note 3
linear scale
dB scale
−
−
5
7
7
−
8.5
dB
2003 Apr 02
10
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
SYMBOL
ERmax
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
high extinction ratio setting dual-loop set-up; IER < −10 µA;
note 3
linear scale
dB scale
13
15
−
−
11
11.8
−
dB
%
ERacc
relative accuracy of ER
temperature and VCCA
variations; ER = 10;
AVR = 550 µA
−10
−
+10
Vref(ER)
IER
reference voltage on
pin ER
IER = −35 to −5 µA;
CER < 100 pF
1.15
1.20
1.25
V
current sink on pin ER
−35
−
−5
µA
Average setting for dual-loop control and average loop control: pins MON and AVR
Iav(MON)(low)
Iav(MON)(max)
∆Iav(MON)
low average monitor
current setting
IAVR > −280 µA
dual-loop (ER = 5)
−
−
−
−
150
150
µA
µA
average loop (pin ER to GND)
maximum average monitor IAVR = −15.0 µA
current setting
dual-loop (ER = 5)
1200
1300
1300
−
−
µA
µA
%
average loop (pin ER to GND) 1200
−
relative accuracy of
average current on
pin MON
temperature and VCCA
variations; ER = 10;
AVR = 550 µA
−10
+10
Vref(AVR)
Isink(AVR)
reference voltage on
pin AVR
IAVR = −250 to −15 µA;
CAVR < 100 pF
1.15
1.20
1.25
V
current sink on pin AVR
−280
−
−15
µA
Control loop modulation output: pin MODOUT
Isource(MODOUT) source current VMODOUT = 0.5 to 1.5 V;
−
−
−
−200
µA
µA
CMODOUT < 100 pF
Isink(MODOUT)
sink current
VMODOUT = 0.5 to 1.5 V;
CMODOUT < 100 pF
200
−
Control loop bias output: pin BIASOUT
Isource(BIASOUT) source current
VBIASOUT = 0.5 to 1.5 V;
CBIASOUT < 100 pF
−
−
−
−200
µA
µA
Isink(BIASOUT)
sink current
VBIASOUT = 0.5 to 1.5 V;
CBIASOUT < 100 pF
200
−
Bias current source: pins BIASIN and BIAS
gm(bias)
bias transconductance
VBIASIN = 0.5 to 1.5 V
V
BIAS = VCCO = 3.3 V
90
110
125
130
−95
mA/V
mA/V
µA
VBIAS = 4.1 V; VCCO = 5.0 V
95
110
Isource(BIASIN)
source current at
pin BIASIN
VBIASIN = 0.5 to 1.5 V
−110
−100
IBIAS(max)
IBIAS(min)
IBIAS(dis)
maximum bias current
minimum bias current
bias current at disable
VBIASIN = 1.8 V
100
−
−
−
mA
mA
µA
VBIASIN = 0 to 0.4 V
VENABLE < 0.8 V
0.2
−
0.4
30
−
2003 Apr 02
11
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
SYMBOL
VBIAS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
output voltage on pin BIAS normal operation
V
CCO = 3.3 V
CCO = 5 V
0.4
−
−
3.6
4.1
V
V
V
0.8
Modulation current source: pin MODIN
gm(mod)
modulation
VMODIN = 0.5 to 1.5 V
transconductance
V
LA = VLAQ = VCCO = 3.3 V
LA = VLAQ = VCCO = 4.5 V
78
90
95
105
110
−95
mA/V
mA/V
µA
V
80
Isource(MODIN)
source current at
pin MODIN
VMODIN = 0.5 to 1.5 V
−110
−100
Modulation current outputs: pins LA
Io(LA)(max)(on)
maximum laser
modulation output current VLA = VCCO = 3.3 V; note 4
at LA on
VMODIN = 1.8 V;
100
−
−
mA
mA
Io(LA)(min)(on)
Io(LA)(min)(off)
minimum laser modulation VMODIN = 0 to 0.4 V;
output current at LA on
−
5
6
VLA = VCCO = 3.3 V; note 4
minimum laser modulation VLA = VCCO = 3.3 V; note 4
output current at LA off
VMODIN = 0.5 V
−
−
0.8
2
mA
mA
Ω
VMODIN = 1.5 V
−
−
Z
o(LA), Zo(LAQ) output impedance LA and
80
100
125
LAQ pins
Io(LA)(dis)
Io(LAQ)(dis)
,
non-inverted and inverted VENABLE < 0.8 V
laser modulation output
−
−
200
µA
current at disable
Vo(LA)min
minimum output voltage at TZA3011A; VCCO = 3.3 V
1.6
1.2
1.6
−
−
−
−
−
−
V
V
V
pin LA
TZA3011B; VCCO = 3.3 V
TZA3011B; VCCO = 5 V
Enable function: pin ENABLE
VIL
LOW-level input voltage
bias and modulation currents
disabled
−
−
0.8
−
V
VIH
HIGH-level input voltage
internal pull-up resistance
bias and modulation currents
enabled
2.0
16
−
V
Rpu(int)
20
30
kΩ
Alarm reset: pin ALRESET
VIL
LOW-level input voltage
no reset
reset
−
−
0.8
−
V
VIH
HIGH-level input voltage
2.0
7
−
V
Rpd(int)
internal pull-down
resistance
10
15
kΩ
2003 Apr 02
12
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Alarm operating current: pins MAXOP and ALOP
Vref(MAXOP)
NMAXOP
reference voltage on
pin MAXOP
IMAXOP = 10 to 200 µA
1.15
1.2
1.25
V
ratio of Ioper(alarm) and
IMAXOP
Ioper(alarm) = 7.5 to 150 mA
V
CCO = 3.3 V
CCO = 5.0 V
700
750
0
800
850
−
900
950
0.4
V
VD(ALOP)L
drain voltage at active
alarm
IALOP = 500 µA
V
V
Alarm monitor current: pins MAXMON and ALMON
Vref(MAXMON)
reference voltage on
pin MAXMON
IMAXMON = 10 to 200 µA
IMON(alarm) = 150 to 3000 µA
IALMON = 500 µA
1.15
10
0
1.2
15
−
1.25
20
NMAXMON
ratio of IMON(alarm) and
IMAXMON
VD(ALMON)L
drain voltage at active
alarm
0.4
V
Reference block: pins RREF and VTEMP
VRREF
reference voltage
RRREF = 10 kΩ (1%);
CRREF < 100 pF
1.15
1.15
−
1.20
1.20
−2.2
−
1.25
1.25
−
V
VVTEMP
temperature dependent
voltage
Tj = 25 °C; CVTEMP < 2 nF;
note 5
V
TCVTEMP
Isource(VTEMP)
temperature coefficient of Tj = −25 to +125 °C; note 5
VVTEMP
mV/K
mA
mA
source current of
pin VTEMP
−
−1
Isink(VTEMP)
sink current of pin VTEMP
1
−
−
Notes
1. The total power dissipation Ptot is calculated with VBIAS = VCCO = 3.3 V and IBIAS = 20 mA. In the application VBIAS
will be VCCO minus the laser diode voltage which results in a lower total power dissipation.
2. The specification of the offset voltage is guaranteed by design.
3. Any (AVR, ER) settings need to respect IMON > 50 µA and IMON < 2500 µA. Therefore, for large ER settings,
minimum/maximum AVR cannot be reached.
100
100 + ZL(LA)
4. The relation between the sink current Io(LA) and the modulation current Imod is: lo(LA) = Imod
×
where
--------------------------------
ZL(LA) is the external load on pin LA. The voltage on pin MODIN programmes the modulation current Imod. This current
is divided between ZL(LA) and the 100 Ω internal resistor connected to pins LA. When the modulation current is
programmed to 100 mA, a typical ZL(LA) of 25 Ω will result in an Io(LA) current of 80 mA, while 20 mA flows via the
internal resistor. This corresponds to a voltage swing of 2 V on the real application load.
5. VVTEMP = 1.31 + TCVTEMP × Tj and Tj = Tamb + Ptot × Rth(j-a)
.
2003 Apr 02
13
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
11 AC CHARACTERISTICS
Tamb = −40 to +85 °C; Rth(j-a) = 35 K/W; Ptot = 400 mW; VCCA = 3.14 to 3.47 V; VCCD = 3.14 to 3.47 V;
CCO = 3.14 to 3.47 V; RAVR = 7.5 kΩ; RER = 62 kΩ; RMODIN = 6.2 kΩ; RBIASIN = 6.8 kΩ; RPWA = 10 kΩ; RRREF = 10 kΩ;
MAXMON = 13 kΩ; RMAXOP = 20 kΩ; positive currents flow into the IC; all voltages are referenced to ground; unless
V
R
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
RF path
BR
bit rate
dual-loop control
0.03
−
−
−
2.7
Gbits/s
Gbits/s
ps
average loop control
0.03
3.2
20
JLA(p-p)
tr
jitter of pin LA output signal
(peak-to-peak value)
RL = 25 Ω; note 1
−
rise time of voltage on pin LA
20% to 80%; RL = 25 Ω;
Imod = 17 mA;
notes 2 and 3
70
50
85
70
110
100
ps
ps
tf
fall time of voltage on pin LA
80% to 20%; RL = 25 Ω;
Imod = 17 mA;
notes 2 and 3
tsu(D)
th(D)
data input set-up time
data input hold time
start-up time at enable
60
60
−
−
−
−
−
−
1
ps
ps
µs
ten(start)
direct current setting
Current control
tcint
internal time constant
dual-loop control
operating currents fully
settled
30
−
−
ms
Pulse width adjustment
tPWA(min) minimum pulse width
RPWA = 6.7 kΩ;
CPWA < 100 pF
−
−
−100
ps
ps
ps
adjustment on pins LA
tPWA
pulse width adjustment on
pins LA
RPWA = 10 kΩ;
CPWA < 100 pF
−
0
−
−
tPWA(max)
maximum pulse width
adjustment on pins LA
RPWA = 20 kΩ;
CPWA < 100 pF
80
100
Notes
1. The output jitter specification is guaranteed by design.
2. With a 25 Ω load on the LA pins: Io(LA) = 14 mA when Imod = 17 mA.
3. For high modulation current, tr and tf are impacted by total inductance between the LA pins and the laser connection.
2003 Apr 02
14
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
12 APPLICATION INFORMATION
12.1 Design equations
handbook, halfpage
105
12.1.1 BIAS AND MODULATION CURRENTS
I
= I
The bias and modulation currents are determined by the
voltages on pins BIASIN and MODIN. These voltages are
applied by the BIASOUT and MODOUT pins for dual-loop
control. For average loop control the BIASIN voltage is
applied by the BIASOUT pin and the MODIN voltage is
applied by an external voltage source or an external
mod o(LA)
(mA)
g
=
m(mod)
100 mA/V
resistor RMODIN
.
For direct setting of bias and the modulation current, the
BIASIN and MODIN voltages have to be applied by
external voltage sources or by RBIASIN and RMODIN
external resistors connected on BIASIN and MODIN pins:
I
o(LA)(min)
5
0
0.5
1.5
V
(V)
MODIN
MGT891
IBIAS = (RBIASIN × 100 µA − 0.5 V) × gm(bias) [mA]
Imod = (RMODIN × 100 µA − 0.5 V) × gm(mod) + 5 [mA]
LA current when LA output is on.
Vo(LA) = VCCO
.
The bias and modulation current sources operate with an
input voltage range from 0.5 to 1.5 V. The output current is
at its minimum level for an input voltage below 0.4 V;
see Figs 3 and 4.
Fig.4 Modulation current as a function of MODIN
voltage.
The bias and modulation current sources are temperature
compensated and the adjusted current level remains
stable over the temperature range.
12.1.2 AVERAGE MONITOR CURRENT AND EXTINCTION
RATIO
The average monitor current Iav(MON) in dual-loop or
average loop operation is determined by the source
current (IAVR) of the AVR pin. The current can be sunk by
The bias and modulation currents increase with increasing
resistor values for RBIASIN and RMODIN respectively, this
allows resistor tuning to start at a minimum current level.
an external current source or by an external resistor (RAVR
connected to ground:
)
VAVR
Iav(MON) = 1580 − 5.26 × IAVR =1580 − 5.26 ×
[µA]
-------------
handbook, halfpage
RAVR
110
The extinction ratio in dual-loop operation is determined by
the source current (IER) of the ER pin. The current can be
sunk by an external current source or by an external
resistor (RER) connected to ground:
I
BIAS
(mA)
g
=
m(bias)
110 mA/V
V ER
IER
1
ER = 20 –
= 20 –
×
------------ ----------
--------------
2 µA RER
2 µA
The average monitor current and the extinction ratio as a
function of the IAVR and IER current are illustrated in Fig.5.
I
BIAS(min)
0.2
The average monitor current increases with a decreasing
IAVR or increasing RAVR, this allows resistor tuning of RAVR
to start at minimum IAVR current level.
0
0.5
1.5
V
(V)
BIASIN
MGT890
The formulas used to program AVR and ER are valid for
typical conditions; tuning is necessary to achieve good
absolute accuracy of AVR and ER values.
Fig.3 Bias current as a function of BIASIN voltage.
2003 Apr 02
15
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
I
av(MON)
(µA)
ER
15
1500
I
ER
ER = 20 −
I
= 1580 − 5.26 × I
µA
AVR
av(MON)
2 µA
5
30
0
1015 30
295
I
I
(µA)
AVR
(µA)
MGT892
ER
Fig.5 Average monitor current and extinction ratio as a function of IAVR and IER
.
12.1.3 DUAL-LOOP CONTROL
Performance of the dual-loop for high data-rate is linked to
the quality of the incoming IMON signal: a high
performance interconnection between monitor photodiode
and MON input is requested for maximum data rate
applications (2.7 Gbits/s).
The dual-loop control measures the monitor current (IMON
corresponding with an optical ‘one’ level and the IMON
corresponding with the optical ‘zero’ level. The measured
IMON(one) and IMON(zero) are compared with the average
monitor current setting and the extinction ratio setting
according to:
)
The operational area of the dual-loop and the control area
of the monitor input current must respect the following
equations:
I
+ IMON(zero)
--M----O----N---(-o---n--e---)-------------------------------
2
Iav(MON)
=
50 µA < IMON(zero) < 500 µA
250 µA < IMON(one) < 2500 µA
IMON(one)
ER =
-----------------------
IMON(zero)
Stability of ER and AVR settings are guaranteed over a
range of temperature and supply voltage variations.
The dual-loop controls the bias and the modulation current
for obtaining the IMON(one) and IMON(zero) current levels
which correspond with the programmed AVR and ER
settings.
2003 Apr 02
16
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
12.1.4 ALARM OPERATING CURRENT
12.1.5 ALARM MONITOR CURRENT
The alarm threshold Ioper(alarm) on the operating current is
determined by the source current IMAXOP of the MAXOP
pin. The current range for IMAXOP is from 10 to 200 µA
which corresponds with an Ioper(alarm) from 7.5 to 150 mA.
The IMAXOP current can be sunk by an external current
source or by connecting RMAXOP to ground:
The alarm threshold IMON(alarm) on the monitor current is
determined by the source current IMAXMON of the
MAXMON pin. The current range for IMAXMON is from
10 to 200 µA which corresponds with an IMON(alarm) from
150 to 3000 µA. The IMAXMON current can be sunk by an
external current source or by connecting RMAXMON to
ground:
VMAXOP
Ioper(alarm) = NMAXOP
×
--------------------
VMAXMON
RMAXOP
I MON(alarm) = NMAXMON
×
------------------------
RMAXMON
The operating current equals the bias current for an
AC-coupled laser application and equals the bias current
plus half of the modulation current for the DC-coupled
laser application:
12.1.6 PULSE WIDTH ADJUSTMENT
The pulse width adjustment time is determined by the
value of resistor RPWA, as shown below.
I oper(TZA3011A) = IBIAS
R
PWA – 10 kΩ
t PWA = 200 ×
[ps]
------------------------------------
RPWA
Imod
Ioper(TZA3011B) = IBIAS
+
----------
2
The tPWA range is from −100 to +100 ps which
corresponds with a RPWA range between a minimum
resistance of 6.7 kΩ and a maximum resistance of 20 kΩ.
The PWA function is disabled when the PWA input is
short-circuited to ground; tPWA equals 0 ps for a disabled
PWA function.
handbook, halfpage
100
t
PWA
(ps)
6.7
0
10
20
R
(kΩ)
PWA
−100
MGT893
Fig.6 Pulse width adjustment.
17
2003 Apr 02
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
12.2 TZA3011A with dual-loop control
A simplified application using the TZA3011A with dual-loop control and with an AC-coupled laser at 3.3 V laser voltage
is illustrated in Fig.7. The average power level and the extinction ratio are determined by the resistors RAVR and RER
.
The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively. The alarm
threshold on the operating current is made temperature dependent with resistor RVTEMP connected between VTEMP and
MAXOP. This alarm detects the end of life of the laser.
VMAXOP TCVTEMP × (Tj – 25 °C)
Ioper(alarm) = NMAXOP
×
–
-------------------- ---------------------------------------------------------------
RMAXOP
RVTEMP
The resistor RPWA enables pulse width adjustment for optimizing the eye diagram.
3.3 V
laser with
monitor diode
V
V
CCA
3.3 V
3.3 V
1
32 31 30 29 28 27 26
25
BIAS
GND
LA
CCD
DIN
2
3
4
5
6
7
8
24
23
22
21
20
19
18
DINQ
TEST
CIN
LA
TZA3011A
LAQ
LAQ
GND
CINQ
GND
ALRESET
9
10 11 12 13 14 15 16
17
MGT895
Fig.7 TZA3011A with AC-coupled laser and dual-loop control.
2003 Apr 02
18
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
12.3 TZA3011B with dual-loop control
A simplified application using the TZA3011B with dual-loop control and with a DC-coupled laser at 3.3 V or 5 V laser
voltage is illustrated in Fig.8. The average power level and the extinction ratio are determined by the resistors RAVR and
RER. The MODOUT and BIASOUT outputs are connected to the MODIN and the BIASIN inputs respectively.
The open-drain outputs ALOP and ALMON are short-circuited with pin ENABLE causing an active alarm to disable the
bias and modulation current sources. The ALRESET input will reset the alarm latches and enable normal operation.
handbook, full pagewidth
3.3 V or 5 V
laser with
monitor diode
V
CCA
3.3 V
3.3 V
1
32 31 30 29 28 27 26
25
V
BIAS
GND
LA
CCD
DIN
2
3
4
5
6
7
8
24
23
22
21
20
19
18
DINQ
TEST
CIN
LA
TZA3011B
LAQ
LAQ
GND
CINQ
GND
ALRESET
9
10 11 12 13 14 15 16
17
MGT894
Fig.8 TZA3011B with DC-coupled laser and dual-loop control.
2003 Apr 02
19
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
12.4 TZA3011B with average loop control
A simplified application using the TZA3011B with average loop control and a DC-coupled laser at 3.3 or 5 V laser voltage
is illustrated in Fig.9. The ER pin is short-circuited to ground for the average loop control. The average power level is
determined by the resistor RAVR. The average loop controls the bias current and the BIASOUT output is connected to
the BIASIN input. The modulation current is determined by the MODIN input voltage which is generated by the resistor
RMODIN and the 100 µA source current of the MODIN pin.
3.3 V or 5 V
laser with
monitor diode
V
V
CCA
3.3 V
3.3 V
1
32 31 30 29 28 27 26
25
BIAS
GND
LA
CCD
DIN
2
3
4
5
6
7
8
24
23
22
21
20
19
18
DINQ
TEST
CIN
LA
TZA3011B
LAQ
LAQ
GND
CINQ
GND
ALRESET
9
10 11 12 13 14 15 16
17
MGT896
Fig.9 TZA3011B with DC-coupled laser and average loop control.
2003 Apr 02
20
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
13 BONDING PAD LOCATIONS
COORDINATES(1)
SYMBOL
LA
PAD(2)(3)
COORDINATES(1)
x
y
SYMBOL
VCCA
PAD(2)(3)
x
y
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54(4)
55
56
57
1099.1
1099.1
1099.1
1099.1
1099.0
1099.0
1099.0
942.5
185.4
290.5
1
2
−1123.9
−1123.9
−1123.9
−1123.9
−1124.0
−1124.9
−1123.9
−1123.9
−1123.9
−1123.9
−1123.4
−1123.9
−1123.9
−1123.9
−1123.9
−829.8
+1029.3
+949.3
+844.3
+764.3
+604.3
+393.3
+244.5
+139.4
+4.7
LA
VCCA
LA
370.5
VCCD
3
GNDO
BIAS
670.8
VCCD
4
804.8
DIN
5
VCCO
944.4
DINQ
GNDRF
GNDRF
GNDRF
GNDRF
TEST
CIN
6
VCCO
1024.4
1124.3
1123.8
1123.7
1123.8
1123.8
1123.8
+1123.8
+1123.8
+954.4
+1123.8
+1123.8
+1123.8
7
ACDC
GNDESD
MON
8
765.0
9
602.1
10
11
12
13
14
15
16
17
18
19
20(4)
21
22(4)
23
24
25
26
27
28
29
30
31
32
33
34(4)
35
36
37
38(4)
−100.3
−253.4
−441.2
−697.1
−850.8
−991.4
−1123.7
−1124.0
−1124
BIASIN
BIASOUT
GNDCCB
MODIN
GNDCCB
i.c.
431.7
267.6
100.8
CINQ
GNDESD
ALRESET
ENABLE
GNDDFT
ALOP
ALMON
i.c.
−82.7
−241.1
−274.4
−487.2
−645.6
−802.8
MODOUT
ER
−665.6
−504.9
AVR
−267.6
−1124.3
−344.4
−1124.3
−368.4
−1124.2
−1124.2
−1124.0
−1124.0
−979.4
−829.7
−691.2
−611.2
−506.4
−426.4
−247.0
−194.4
−142.0
−36.8
Notes
−221.5
1. All coordinates are referenced, in µm, to the centre of
MAXOP
i.c.
−98.5
the die.
−48.6
2. All GND connections should be used.
VTEMP
MAXMON
RREF
GNDRF
PWA
+294.0
+466.9
+694.9
+860.3
+1098.9
+1099.0
+1099.0
+1099.0
+1099.0
+1099.0
+1099.8
+839.0
+1099.8
+1099.8
1099.1
3. Recommended order of bonding: all GND first, then
V
CCA,VCCD and VCCO supplies and finally the input and
output pins.
4. Pad is internally connected, do not use.
GNDO
LAQ
LAQ
LAQ
LAQ
GNDO
i.c.
GNDO
GNDO
LA
105.4
i.c.
839.0
179.6
2003 Apr 02
21
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
2.56 mm
57 56 55
53 52 51 50 49 48 47 46
V
V
45
44
V
V
1
2
CCO
CCO
CCA
CCA
i.c.
54
43
42
BIAS
V
3
4
CCD
CCD
V
GNDO
DIN
5
6
41
40
39
37
LA
LA
LA
LA
DINQ
i.c. 38
GNDRF
GNDRF
GNDRF
GNDRF
7
8
x
2.51
mm
36
35
33
GNDO
GNDO
GNDO
0
0
9
10
i.c. 34
y
22
TEST
CIN
11
12
13
14
15
20
i.c.
i.c.
32
31
30
29
LAQ
LAQ
LAQ
LAQ
CINQ
TZA3011UH
GNDESD
ALRESET
28
27
GNDO
PWA
16 17 18
19
21
23
24
25
26
MGU553
Fig.10 TZA3011UH die.
Table 1 Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
Bonding pad dimension
Metallization
Thickness
0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm of silicon nitride
minimum dimension of exposed metallization is 80 × 80 µm (pad size = 90 × 90 µm)
2.8 µm AlCu
380 µm nominal
Size
2.560 × 2.510 mm (6.43 mm2)
Backing
silicon; electrically connected to GND potential through substrate contacts
<440 °C; recommended die attachment is by gluing
<15 s
Attach temperature
Attach time
2003 Apr 02
22
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
14 PACKAGE OUTLINE
HBCC32: plastic thermal enhanced bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
SOT560-1
D
x
B
b
v
M
M
C
C
A B
1
w
v
M
M
C
A
B
w
C
ball A1
index area
b
b
3
E
v
M
C
C
A
B
w
M
b
v
M
M
C
C
A B
2
w
detail X
x
C
A
B
C
e
1
e
y
v
A
e
2
E
e
1 4
1
32
A
X
D
1
1
A
e
2
3
A
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
A
A
b
E
e
e
1
w
b
b
b
D
D
E
e
e
e
v
x
y
UNIT
1
2
1
1
2
3
1
2
3
4
max.
0.10 0.7
0.05 0.6
0.35 0.5
0.20 0.3
0.50 0.50 5.1
0.35 0.35 4.9
3.2
3.0
5.1
4.9
3.2
3.0
mm
0.8
0.15 0.15 0.05
0.5
4.2
4.2 4.15 4.15
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
MO-217
JEITA
00-02-01
03-03-12
SOT560-1
2003 Apr 02
23
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
15 SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
15.1 Introduction to soldering surface mount
packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
15.2 Reflow soldering
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferably be kept:
• below 220 °C for all the BGA packages and packages
with a thickness ≥ 2.5mm and packages with a
thickness <2.5 mm and a volume ≥350 mm3 so called
thick/large packages
15.4 Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
• below 235 °C for packages with a thickness <2.5 mm
and a volume <350 mm3 so called small/thin packages.
15.3 Wave soldering
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
2003 Apr 02
24
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
15.5 Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
WAVE
REFLOW(2)
not suitable suitable
PACKAGE(1)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA
DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, HVSON, SMS
not suitable(3)
suitable
PLCC(4), SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended(4)(5) suitable
not recommended(6)
suitable
SSOP, TSSOP, VSO, VSSOP
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2003 Apr 02
25
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
16 DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
17 DEFINITIONS
18 DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Apr 02
26
Philips Semiconductors
Product specification
30 Mbits/s up to 3.2 Gbits/s
A-rateTM laser drivers
TZA3011A; TZA3011B
Bare die
All die are tested and are guaranteed to
comply with all data sheet limits up to the point of wafer
sawing for a period of ninety (90) days from the date of
Philips' delivery. If there are data sheet limits not
guaranteed, these will be separately indicated in the data
sheet. There are no post packing tests performed on
individual die or wafer. Philips Semiconductors has no
control of third party procedures in the sawing, handling,
packing or assembly of the die. Accordingly, Philips
Semiconductors assumes no liability for device
functionality or performance of the die or systems after
third party sawing, handling, packing or assembly of the
die. It is the responsibility of the customer to test and
qualify their application in which the die is used.
2003 Apr 02
27
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/05/pp28
Date of release: 2003 Apr 02
Document order number: 9397 750 11282
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