UAA3592 [NXP]
Wideband code division multiple access frequency division duplex power amplifier; 宽带码分多址频分双工功率放大器
| 型号： | UAA3592 |
| 厂家： | 
NXP |
| 描述： | Wideband code division multiple access frequency division duplex power amplifier |
| 文件： | 总12页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
UAA3592
Wideband code division multiple
access frequency division duplex
power amplifier
Objective specification
2002 Jul 02
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
FEATURES
GENERAL DESCRIPTION
• 3.6 V nominal supply voltage
• 24 dBm average output power
• 0 dBm input power
The UAA3592 is a Wideband Code Division Multiple
Access (WCDMA) silicon bipolar transistor Monolithic
Microwave Integrated Circuit (MMIC) Power Amplifier
(PA). The circuit is specially designed to operate at a
nominal 3.6 V battery supply voltage. It includes a current
saving architecture at low output power levels.
• Wide operating temperature range from −30 to +70 °C
• HVQFN16 package.
APPLICATIONS
• WCDMA-FDD applications.
QUICK REFERENCE DATA
Tamb = 25 °C; VC1 = 3.6 V; Vreg = 2.7 V.
SYMBOL
VC1
Po(max)
η
PARAMETER
MIN.
TYP. MAX. UNIT
positive supply voltage
maximum output power
−
3.6
24.5
35
−
V
−
−
dBm
%
efficiency at maximum power
ambient temperature
−
−
Tamb
−30
−
+70
°C
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
UAA3592HN
HVQFN16
plastic, heatsink very thin quad flat package; no leads;
SOT629-1
16 terminals; body 4 × 4 × 0.85 mm
2002 Jul 02
2
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
BLOCK DIAGRAM
V
F
8
C1
RX
6,7
UAA3592HN
10,11
3
RFI
ext
RFO
16
BIAS
R
POWER
DETECTOR
CONTROL
2
1
ICTL
EN
4, 5
9, 12, 13
n.c.
(1)
15
14
detect
FCA234
V
V
reg
GND
Die pad must be connected to ground.
Fig.1 Block diagram.
2002 Jul 02
3
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
PINNING
SYMBOL
EN
PIN
DESCRIPTION
1
enable input
ICTL
RFI
2
3
current control input
power amplifier input
not connected
n.c.
4
n.c.
5
not connected
VC1
6
supply voltage for the first stage collector
supply voltage for the first stage collector
RX filter
VC1
7
FRX
n.c.
8
9
not connected
RFO
RFO
n.c.
10
11
12
13
14
15
16
die pad
power amplifier output
power amplifier output
not connected
n.c.
not connected
Vdetect
Vreg
Rext
power detection
regulated supply voltage
connection to external resistor
ground
n.c.
RFI
4
3
2
1
9
n.c.
10
11
12
RFO
RFO
n.c.
UAA3592HN
ICTL
EN
FCA235
Fig.2 Pin configuration (bottom view).
2002 Jul 02
4
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
FUNCTIONAL DESCRIPTION
Operating conditions
The UAA3592 is designed to meet the “Third Generation Partnership Project (3GPP) specification” for the Universal
Mobile Telecommunication System (UMTS) standard.
Power amplifier
The device is intended for WCDMA power amplification. The control signals select the bias current as given in Table 1.
Table 1 Current control
EN
0
ICTL
DESCRIPTION
0
1
0
1
off
0
off
1
nominal bias current
1
bias current is reduced by 50% on the second stage
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VC1
PARAMETER
CONDITIONS
MIN.
MAX.
5.5
UNIT
supply voltage for the first stage
collector
−
V
V
Vreg
regulated voltage
−
−
3.3
Tj(max)
maximum operating junction
temperature
150
°C
Ptot
Pi
total power dissipation
input power
note 1
−
−
tbf
mW
dBm
°C
10
Tstg
storage temperature
−55
+150
Note
1. On Philips evaluation board.
HANDLING
Do not operate or store near strong electrostatic fields.
Mets class 1 ESD test requirements (Human Body Model - HBM), in accordance with “EIA/JESD22-A114-A (October
1997)” and class A ESD test requirements (Machine Model - MM), in accordance with “EIA/JESD22-A115.-A (October
1997)”.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to
ambient
in free air; note 1
tbf
K/W
Note
1. On Philips evaluation board.
2002 Jul 02
5
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
DC CHARACTERISTICS
VC1 = 3.6 V; Vreg = 2.7 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
VC1
PARAMETER
CONDITIONS
MIN.
3.25
TYP.
3.6
MAX.
4.5
UNIT
supply voltage for the
first stage collector
V
V
Vreg
regulated supply
voltage
2.6
2.7
3
IC1(q)
quiescent supply
current
pin ICTL is LOW
−
−
−
−
−
−
50
25
5
mA
mA
µA
pin ICTL is HIGH
Ileak
leakage current
VC1 = 4.5 V; pin EN is LOW
Inputs EN and ICTL
VIL
VIH
LOW-level input voltage
−
−
−
1.1
V
V
HIGH-level input
voltage
1.5
−
AC CHARACTERISTICS
C1 = 3.6 V; Vreg = 2.7 V; Tamb = 25 °C; fRF = 1920 to 1980 MHz; Pi adjusted for Po = 24.5 dBm; Rext = 2.2 kΩ;
measured and guaranteed on Philips evaluation board; unless otherwise specified.
V
SYMBOL
PARAMETER
input power
CONDITIONS
MIN.
−6
TYP.
MAX.
UNIT
dBm
Pi
Tamb = −30 to +70 °C
−
−
0
Po(max)
maximum output power Tamb = −30 to +70 °C;
22.5
−
dBm
VC1 = 3.25 V
η
efficiency
30
−
−
−
%
No(RX)
output noise in RX
band
at 190 MHz offset;
fRF = 2110 to 2170 MHz
−
−135
dBm/Hz
H2
second-harmonic level
third-harmonic level
−
−
−
−
−
−
−40
−45
−37
dBc
dBc
dBc
H3
CPR(adj)
adjacent channel power B = 3.84 MHz; at 5 MHz from
ratio carrier frequency
first alternate channel B = 3.84 MHz; at 10 MHz
CPR(alt)
RLi
−
−
−
−
−
−
−
−
−47
−6
dBc
dB
power ratio
from carrier frequency
input return loss
Tamb = −30 to +70 °C;
fRF = 1.5 to 2.5 GHz
G(ripple)
∆G
ripple gain
∆fRF = 5 MHz;
fRF = 1920 to 1980 MHz
0.5
tbf
dB
gain variation
Po up to 24.5 dBm; pin ICTL
is LOW
dB
2002 Jul 02
6
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
PACKAGE OUTLINE
HVQFN16: plastic thermal enhanced very thin quad flat package; no leads;
16 terminals; body 4 x 4 x 0.85 mm
SOT629-1
B
A
D
terminal 1
index area
A
A
1
E
c
detail X
e
1
C
1/2 e
y
y
e
v
M
M
b
C
C
A B
C
1
w
5
8
L
9
4
1
e
e
E
h
2
1/2 e
12
terminal 1
index area
16
13
X
D
h
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
(1)
A
(1)
(1)
UNIT
A
b
c
E
e
e
e
2
y
D
D
E
L
v
w
y
1
1
h
1
h
max.
0.05 0.40
0.00 0.23
4.05 2.25 4.05 2.25
3.95 1.95 3.95 1.95
0.75
0.35
mm
0.05
0.1
1
0.2
0.65
1.95 1.95
0.1 0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
01-06-28
01-08-08
SOT629-1
- - -
MO-220
- - -
2002 Jul 02
7
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
SOLDERING
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
2002 Jul 02
8
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
not suitable
REFLOW(1)
BGA, HBGA, LFBGA, SQFP, TFBGA
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS
PLCC(3), SO, SOJ
suitable
suitable
suitable
not suitable(2)
suitable
LQFP, QFP, TQFP
not recommended(3)(4) suitable
not recommended(5)
suitable
SSOP, TSSOP, VSO
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Jul 02
9
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jul 02
10
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
NOTES
2002 Jul 02
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403506/01/pp12
Date of release: 2002 Jul 02
Document order number: 9397 750 09326
相关型号：
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