EE-SMR1-1 [OMRON]
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.08-1mA, Circular, Through Hole Mount, TO-18,4;
| 型号： | EE-SMR1-1 |
| 厂家： | 
OMRON ELECTRONICS LLC |
| 描述： | Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.08-1mA, Circular, Through Hole Mount, TO-18,4 传感器 换能器 |
| 文件： | 总4页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EE-SMR1-1
Top View Reflective Phototransistor
Model
ꢀ Subminiature, with stem size of 5.8 mm
dia. (TO-18)
ꢀ Extended life and high reliability assured
through use of infrared LED and
phototransistor
Ordering Information
Appearance Sensing
method
Sensing Sensing object
distance
Output
configuration
Weight
Part number
Reflective 1 mm
White paper with
reflection factor of 90%
Phototransistor Approx. 0.2 g EE-SMR1-1
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C (77°F))
Item
Symbol
Rated value
Input
Forward current
Pulse forward current
Reverse voltage
Collector-emitter voltage
Collector current
Collector dissipation
Operating
I
I
40 mA*
F
1 A**
FP
V
V
4 V
R
Output
30 V
CEO
I
20 mA
C
P
150 mW*
C
Ambient temperature
Topr
Tstg
0°C to 60°C (32° to 140°F)***
-20°C to 80°C (-4° to 176°F)
Storage
*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.
**This value was measured with a pulse width of 10 µs and a repeating frequency of 100 Hz.
***Without freezing or condensation.
EE-SMR1-1
EE-SMR1-1
CHARACTERISTICS (TA = 25°C (77°F))
Item
Symbol
Value
Condition
I = 30 mA
F
Input
Forward voltage
Reverse current
Dark current
V
1.5 V max.
10 µA max.
400 nA max.
80 to 1,000 µA
F
I
I
I
V
V
= 4 V
R
R
Output
= 10, V 0 x
D
L
CE
Combination
Light current
(Collector current)
I = 10 mA*
F
V
= 10 V
CE
Leakage current
I
1 µA max.
I = 10 mA**
F
CE
LEAK
V
= 10 V
V
= 10 V
Rising time***
Falling time***
tr
tf
35 µs typ
25 µs typ
CC
L
R
= 1 kΩ
I
= 100 µA
L
*The sensing object is white paper with a reflection factor of 90% at a sensing distance of 1 mm.
**The sensing object reflects no light.
***The following illustrations show the rising time, tr, and the falling time, tf.
Sensing object
I
V
Input
F
CC
Input
0
0
t
t
90%
10%
Output
Output
tr
tf
R
L
Engineering Data
Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges.
TEMPERATURE CHARACTERISTICS
INPUT CHARACTERISTICS (TYPICAL)
T
= -30°C
= 25°C
= 70°C
A
T
A
T
A
Forward voltage V (V)
Ambient temperature T (°C)
F
A
EE-SMR1-1
EE-SMR1-1
INPUT/OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T
A
= 25 °C
Object sensed: white paper
(Reflection factor 90%)
Distance: 1 mm
T
V
= 25 °C
A
= 10 V
CE
Object sensed: white paper
(Reflection factor 90%)
Distance: 1 mm
Collector-emitter voltage V (V)
CE
LIGHT CURRENT TEMPERATURE
DEPENDENCY (TYPICAL)
LIGHT CURRENT TEMPERATURE
DEPENDENCY (TYPICAL)
I
V
= 10 mA
F
= 10 V
CE
Object sensed: white paper
(Reflection factor 90%)
Distance: 1 mm
Ambient temperature T (°C)
A
Ambient temperature T (°C)
A
SENSING DISTANCE
CHARACTERISTICS
T
= 25 °C
= 10 mA
A
I
F
V
= 10 V
CE
Object sensed: white paper
(Reflection factor 90%)
Distance (mm)
EE-SMR1-1
EE-SMR1-1
Dimensions
Unit: mm (inch)
EE-SMR1-1
5.0
14.0
0.2
1.0
1.0
0.45 dia
5.8
1.8
1.8
5.3
0.9
1.3
2.54 dia.
Note: 1. The phototransistor is electrically connected to the collector side in the stem part.
Electrical Connection
PINOUT
Emitter
Collector
Cathode
Anode
Bottom view
Precautions
Refer to the Technical Information Section for general precautions.
NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4.
OMRON ELECTRONICS, INC.
OMRON CANADA, INC.
One East Commerce Drive
885 Milner Avenue
Schaumburg, IL 60173
Scarborough, Ontario M1B 5V8
1-800-55-OMRON
416-286-6465
Cat. No. EO5DAX4
1/99
Specifications subject to change without notice.
Printed in U.S.A.
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