1N4448TR [ONSEMI]

高电导快速二极管;
1N4448TR
型号: 1N4448TR
厂家: ONSEMI    ONSEMI
描述:

高电导快速二极管

二极管
文件: 总7页 (文件大小:156K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N91x, 1N4x48, FDLL914,  
FDLL4x48  
Small Signal Diode  
www.onsemi.com  
ORDERING INFORMATION  
Part Number  
1N914  
Marking  
914  
Package  
Packing Method  
Bulk  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
DO−204AH (DO−35)  
SOD−80  
1N914−T50A  
1N914TR  
914  
Ammo  
914  
Tape and Reel  
Tape and Reel  
Bulk  
1N914ATR  
1N914B  
914A  
914B  
914B  
916  
DO−35  
Cathode is denoted with a black band  
1N914BTR  
1N916  
Tape and Reel  
Bulk  
Cathode Band  
1N916A  
916A  
916B  
4148  
4148  
4148  
4148  
4148  
4148  
4448  
4448  
Black  
Black  
Black  
Black  
Black  
Black  
Black  
Bulk  
1N916B  
Bulk  
1N4148  
Bulk  
SOD80  
1N4148TA  
1N4148−T26A  
1N4148−T50A  
1N4148TR  
1N4148−T50R  
1N4448  
Ammo  
LL−34  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
Ammo  
Ammo  
Tape and Reel  
Tape and Reel  
Bulk  
SOD−80 COLOR BAND MARKING  
1N4448TR  
FDLL914  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
DEVICE  
1ST BAND  
FDLL914  
BLACK  
BLACK  
BLACK  
BLACK  
BLACK  
FDLL914A  
FDLL914B  
FDLL4148  
FDLL4448  
FDLL914A  
FDLL914B  
FDLL4148  
FDLL4148−D87Z  
FDLL4448  
FDLL4448−D87Z  
SOD−80  
SOD−80  
SOD−80  
-1st band denotes cathode terminal  
and has wider width  
SOD−80  
SOD−80  
SOD−80  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
1N914/D  
October, 2017 − Rev. 4  
1N91x, 1N4x48, FDLL914, FDLL4x48  
ABSOLUTE MAXIMUM RATINGS (Values are at T = 25°C unless otherwise noted) (Note 1)  
A
Rating  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
DC Forward Current  
Symbol  
Value  
100  
Unit  
V
V
RRM  
I
O
200  
mA  
mA  
mA  
A
I
F
300  
Recurrent Peak Forward Current  
I
f
400  
Non−repetitive Peak Forward Surge Current  
Pulse Width = 1.0 s  
I
1.0  
FSM  
Pulse Width = 1.0 ms  
4.0  
A
Storage Temperature Range  
T
−65 to +200  
−55 to +175  
°C  
°C  
STG  
Operating Junction Temperature Range  
T
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. These ratings are limiting values above which the serviceability of the diode may be impaired.  
THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Max  
500  
300  
Unit  
mW  
°C  
Power Dissipation  
P
D
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted) (Note 2)  
A
Symbol  
Parameter  
Breakdown Voltage  
Conditions  
Min  
100  
75  
Max  
Unit  
V
V
R
I
R
= 100 mA  
= 5.0 mA  
I
R
V
V
F
Forward Voltage  
914B / 4448  
916B  
I = 5.0 mA  
0.62  
0.63  
0.72  
0.73  
1.0  
V
F
I = 5.0 mA  
F
V
914 / 916 / 4148  
914A / 916A  
916B  
I = 10 mA  
F
V
I = 20 mA  
F
1.0  
V
I = 20 mA  
F
1.0  
V
914B / 4448  
I = 100 mA  
F
1.0  
V
I
Reverse Leakage  
Total Capacitance  
V
= 20 V  
0.025  
50  
mA  
mA  
mA  
pF  
pF  
ns  
R
R
V
= 20 V, T = 150°C  
A
R
V
R
= 75 V  
5.0  
C
916/916A/916B/4448  
914/914A/914B/4148  
V
V
= 0, f = 1.0 MHz  
= 0, f = 1.0 MHz  
2.0  
T
R
4.0  
R
t
Reverse Recovery Time  
I = 10 mA, V = 6.0 V (600 mA)  
4.0  
rr  
F
R
I
rr  
= 1.0 mA, R = 100 W  
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Non−recurrent square wave P = 8.3 ms.  
W
www.onsemi.com  
2
 
1N91x, 1N4x48, FDLL914, FDLL4x48  
TYPICAL PERFORMANCE CHARACTERISTICS  
120  
Ta= 25 oC  
160  
150  
140  
130  
120  
110  
Ta=25 oC  
100  
80  
60  
40  
20  
0
1
2
3
5
10  
20  
30  
50  
100  
10  
20  
30  
50  
70  
100  
Reverse Voltage, VR [V]  
GENERAL RULE: The Reverse Current of a diode will approximately  
double for every ten (10) Degree C increase in Temperature  
Reverse Current, IR [uA]  
Figure 1. Reverse Voltage vs. Reverse Current  
Figure 2. Reverse Current vs. Reverse Voltage  
IR − 10 to 100 V  
BV − 1.0 to 100 mA  
750  
550  
Ta= 25oC  
Ta= 25 o  
C
700  
650  
600  
550  
500  
450  
500  
450  
400  
350  
300  
250  
0.1  
0.2 0.3  
0.5  
1
2
3
5
10  
1
2
3
5
10  
20  
30  
50  
100  
Forward Current, IF [uA]  
Forward Current, IF [mA]  
Figure 3. Forward Voltage vs. Forward Current  
Figure 4. Forward Voltage vs. Forward Current  
VF − 0.1 to 10 mA  
VF − 1 to 100 mA  
900  
1.6  
Ta= 25 oC  
Typical  
800  
Ta= −40oC  
1.4  
1.2  
1.0  
0.8  
0.6  
700  
Ta= 25oC  
600  
Ta= +65oC  
500  
400  
300  
10  
20  
30  
50  
100  
200 300  
500 800  
3
0.01  
0.1  
0.3  
1
10  
0.03  
Forward Current, IF [mA]  
Forward Current, IF [mA]  
Figure 5. Forward Voltage vs. Forward Current  
VF − 10 to 800 mA  
Figure 6. Forward Voltage vs. Ambient Temperature  
VF - 0.01 - 20 mA (- 40 to +65°C)  
www.onsemi.com  
3
1N91x, 1N4x48, FDLL914, FDLL4x48  
TYPICAL PERFORMANCE CHARACTERISTICS  
4.0  
0.90  
0.85  
0.80  
0.75  
Ta = 25 oC  
TA = 25 o  
C
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
10  
20  
30  
40  
50  
60  
0
2
4
6
8
10  
12  
14  
Reverse Recovery Current, I rr [mA]  
REVERSE VOLTAGE (V)  
IF = 10mA , IRR = 1.0 mA  
, Rloop = 100 Ohms  
Figure 7. Total Capacitance  
Figure 8. Reverse Recovery Time vs.  
Reverse Recovery Current  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
DO−35 and LL−34 / SOD−80  
IF(AV)  
− Average Rectified Current − mA  
0
50  
100  
150  
0
50  
100  
150  
200  
Ambient Temperature ( oC)  
Temperature ( oC)  
Figure 9. Average Rectified Current (IF(AV)  
vs. Ambient Temperature (TA)  
)
Figure 10. Power Derating Curve  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
AXIAL LEAD  
CASE 017AG  
ISSUE O  
DATE 31 AUG 2016  
T50 = 25.40 MIN (2X)  
T26 = 14.00 MIN (2X)  
4.56  
3.05  
0.533  
0.460  
NOTES: UNLESS OTHERWISE SPECIFIED  
A) PACKAGE STANDARD REFERENCE:  
JEDEC DO204, VARIATION AH.  
B) HERMETICALLY SEALED GLASS PACKAGE.  
C) PACKAGE WEIGHT IS 0.137 GRAM.  
D) ALL DIMENSIONS ARE IN MILLIMETERS.  
1.91  
1.53  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13443G  
AXIAL LEAD  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
MiniMELF / SOD80  
CASE 100AD  
ISSUE O  
DATE 30 APR 2012  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON79582E  
MINIMELF / SOD80  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
Email Requests to: orderlit@onsemi.com  
TECHNICAL SUPPORT  
North American Technical Support:  
Voice Mail: 1 8002829855 Toll Free USA/Canada  
Phone: 011 421 33 790 2910  
Europe, Middle East and Africa Technical Support:  
Phone: 00421 33 790 2910  
For additional information, please contact your local Sales Representative  
ON Semiconductor Website: www.onsemi.com  
www.onsemi.com  

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