1N5282 [ONSEMI]
小信号二极管;型号: | 1N5282 |
厂家: | ONSEMI |
描述: | 小信号二极管 信号二极管 |
文件: | 总3页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Small Signal Diode
1N5282
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
AXIAL LEAD (DO−35)
CASE 017AG
(Color Band Denotes Cathode)
A
Symbol
Parameter
Value
80
Unit
V
V
RRM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
I
200
mA
F(AV)
MARKING DIAGRAM
I
Non−repetitive Peak Forward Surge Current
Pulse Width = 1.0 s
FSM
1.0
4.0
A
A
528
2
Pulse Width = 1.0 ms
XY
T
Storage Temperature Range
−65 to +200
°C
°C
STG
T
J
Operating Junction Temperature
175
5282
XY
= Specific Device Code
= Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 200°C.
2. These are steady state limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
ORDERING INFORMATION
†
Device
Package
Shipping
1N5282
AXIAL LEAD
(Pb−Free,
Halide Free)
5000 Units / Bulk
THERMAL CHARACTERISTICS
1N5282TR
10000 /
Tape & Reel
Symbol
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
Unit
mV
P
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
R
300
°C/W
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Breakdown Voltage
Test Conditions
Min
Typ
Max
Unit
V
V
R
I
R
= 5 mA
80
−
−
V
F
Forward Voltage
I = 0.1 mA
0.45
0.55
0.67
0.80
0.92
1.05
−
−
−
−
−
−
0.49
0.60
0.725
0.90
1.1
V
F
I = 1.0 mA
F
I = 10 mA
F
I = 100 mA
F
I = 300 mA
F
I = 500 mA
1.3
F
I
R
Reverse Current
V
R
V
R
= 55 V
−
−
100
100
nA
mA
= 55 V, T = 150°C
A
C
Total Capacitance
V
= 0, f = 1.0 MHz
−
−
−
−
2.5
4
pF
ns
T
R
t
rr1
Reverse Recovery Time
I = I = 10 mA, R = 100 W
F R L
Irr = 1.0 mA
t
rr2
Reverse Recovery Time
I = I = 200 mA, R = 100 W
−
−
4
ns
F
R
L
Irr = 20 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
June, 2023 − Rev. 2
1N5282/D
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 017AG
ISSUE O
DATE 31 AUG 2016
T50 = 25.40 MIN (2X)
T26 = 14.00 MIN (2X)
4.56
3.05
0.533
0.460
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO−204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE.
C) PACKAGE WEIGHT IS 0.137 GRAM.
D) ALL DIMENSIONS ARE IN MILLIMETERS.
1.91
1.53
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13443G
AXIAL LEAD
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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