1PMT48AT1 [ONSEMI]
Zener Transient Voltage Suppressor POWERMITE Package; 齐纳瞬态电压抑制器POWERMITE套餐型号: | 1PMT48AT1 |
厂家: | ONSEMI |
描述: | Zener Transient Voltage Suppressor POWERMITE Package |
文件: | 总6页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1PMT5.0AT1/T3 Series
Zener Transient
Voltage Suppressor
POWERMITE Package
The 1PMT5.0AT1/T3 Series is designed to protect voltage
sensitive components from high voltage, high energy transients.
Excellent clamping capability, high surge capability, low zener
impedance and fast response time. The advanced packaging
technique provides for a highly efficient micro miniature, space
saving surface mount with its unique heat sink design. The
POWERMITE has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles (1.1 mm) in the industry. Because of its small size, it is
ideal for use in cellular phones, portable devices, business machines,
power supplies and many other industrial/consumer applications.
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PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 − 58 V
200 W PEAK POWER
1
2
Specification Features:
• Stand−off Voltage: 5 − 58 V
• Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A)
− 175 W @ 1 ms (1PMT40A − 1PMT58A)
1: CATHODE
2: ANODE
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage
• Response Time is Typically < 1 ns
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Low Profile − Maximum Height of 1.1 mm
• Integral Heat Sink/Locking Tabs
1
POWERMITE
CASE 457
PLASTIC
2
MARKING DIAGRAM
D
• Full Metallic Bottom Eliminates Flux Entrapment
• Small Footprint − Footprint Area of 8.45 mm
Mxx
1
2
2
CATHODE
ANODE
• POWERMITE is JEDEC Registered as DO−216AA
• Cathode Indicated by Polarity Band
• Pb−Free Package is Available
Mxx
xx
= Specific Device Code
= 5 − 58
= (See Table Next Page)
= Date Code
D
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
LEAD ORIENTATION IN TAPE:
Cathode (Short) Lead to Sprocket Holes
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
ORDERING INFORMATION
†
Device
Package
Shipping
1PMT5.0AT1
1PMT5.0AT3
POWERMITE 3,000/Tape & Reel
POWERMITE 12,000/Tape & Reel
1PMT5.0AT3G POWERMITE 12,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2004 − Rev. 7
1PMT5.0AT3/D
1PMT5.0AT1/T3 Series
MAXIMUM RATINGS
Rating
Maximum P Dissipation, (PW−10/1000 ms) (Note 1) (1PMT5.0A − 1PMT36A)
Symbol
Value
200
Unit
W
P
pk
P
pk
P
pk
pk
Maximum P Dissipation, (PW−10/1000 ms) (Note 1) (1PMT40A − 1PMT58A)
175
W
pk
Maximum P Dissipation, (PW−8/20 ms) (Note 1)
1000
W
pk
DC Power Dissipation @ T = 25°C (Note 2)
Derate above 25°C
Thermal Resistance from Junction−to−Ambient
°P °
500
4.0
248
°mW
mW/°C
°C/W
A
D
R
q
JA
Thermal Resistance from Junction−to−Lead (Anode)
R
35
°C/W
q
Janode
Maximum DC Power Dissipation (Note 3)
Thermal Resistance from Junction to Tab (Cathode)
°P °
3.2
23
W
°C/W
D
R
q
Jcathode
Operating and Storage Temperature Range
T , T
−55 to +150
°C
J
stg
1. Non−repetitive current pulse at T = 25°C.
A
2. Mounted with recommended minimum pad size, DC board FR−4.
3. At Tab (Cathode) temperature, T = 75°C
tab
I
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
F
otherwise noted, V = 3.5 V Max. @ I (Note 4) = 35 A)
F
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
BR RWM
V
I
V
F
R
T
V
RWM
Working Peak Reverse Voltage
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
F
I
PP
I
Forward Current
Uni−Directional TVS
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T = 30°C unless otherwise noted, V = 1.25 Volts @ 200 mA)
L
F
V
RWM
V
BR
@ I (V) (Note 6)
I
T
I
R
@ V
V
C
@ I
I
PP
(A)
T
RWM
PP
(Note 5)
5.0
7.0
12
Min
Nom
6.7
Max
7.0
(mA)
10
(mA)
800
500
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
(V)
9.2
12
(Note 7)
21.7
16.7
10.1
7.7
Device
Marking
MKE
MKM
MLE
1PMT5.0AT1, T3
1PMT7.0AT1, T3
1PMT12AT1, T3
1PMT16AT1, T3
1PMT18AT1, T3
1PMT22AT1, T3
1PMT24AT1, T3
1PMT26AT1, T3
1PMT28AT1, T3
1PMT30AT1, T3
1PMT33AT1, T3
1PMT36AT1, T3
1PMT40AT1, T3
1PMT48AT1, T3
1PMT51AT1, T3
1PMT58AT1, T3
6.4
7.78
13.3
17.8
20.0
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
53.3
56.7
64.4
8.2
8.6
10
14.0
18.75
21.0
25.6
28.1
30.4
32.8
35.1
38.7
42.1
46.8
56.1
59.7
67.8
14.7
19.7
22.1
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
58.9
62.7
71.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
19.9
26
MLP
16
MLT
18
29.2
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
77.4
82.4
93.6
6.8
MLX
22
5.6
MLZ
24
5.1
MME
MMG
MMK
MMM
MMP
MMR
MMX
MMZ
MNG
26
4.8
28
4.4
30
4.1
33
3.8
36
3.4
40
2.7
48
2.3
51
2.1
58
1.9
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
) which should be equal to or greater
RWM
than the DC or continuous peak operating voltage level.
6. V measured at pulse test current I at ambient temperature of 25°C.
BR
T
7. Surge current waveform per Figure 2 and derate per Figure 4.
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2
1PMT5.0AT1/T3 Series
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
10,000
1000
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
t
r
OF I
.
RSM
100
PEAK VALUE − I
RSM
t ≤ 10 ms
rꢀ
I
RSM
2
HALF VALUE −
50
100
10
t
P
0
1.0
10
100
t , PULSE WIDTH (ms)
1000
10,000
0
1
2
3
4
t, TIME (ms)
P
Figure 1. Pulse Rating Curve
Figure 2. 10 X 1000 ms Pulse Waveform
160
100
90
80
70
60
50
40
30
20
10
t
r
PEAK VALUE I
@ 8 ms
RSM
140
120
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
100
80
HALF VALUE I /2 @ 20 ms
RSM
60
t
P
40
20
0
0
0
0
25
50
75
100
125
150
20
40
t, TIME (ms)
60
80
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. 8 X 20 ms Pulse Waveform
Figure 4. Pulse Derating Curve
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3
1PMT5.0AT1/T3 Series
3.5
3
1
0.7
0.5
0.3
0.2
2.5
PULSE WIDTH
2
10 ms
T
L
0.1
0.07
0.05
1.5
1 ms
1
0.03
0.02
100 ms
0.5
0
10 ms
10 20
0.01
0.1 0.2
0.5
1
2
5
50 100
25
50
75
100
125
150
175
D, DUTY CYCLE (%)
T, TEMPERATURE (°C)
Figure 5. Typical Derating Factor for Duty Cycle
Figure 6. Steady State Power Derating
10,000
1000
1.2
1.0
0.8
0.6
0.4
MEASURED @ ZERO BIAS
MEASURED @ 50% V
100
10
RWM
0.2
0
−55
25
85
150
1
10
WORKING PEAK REVERSE VOLTAGE (VOLTS)
100
T, TEMPERATURE (°C)
Figure 7. Forward Voltage
Figure 8. Capacitance versus Working Peak
Reverse Voltage
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4
1PMT5.0AT1/T3 Series
OUTLINE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
F
C
−A−
M
S
S
C
0.08 (0.003)
T
B
J
S
MILLIMETERS
INCHES
MIN
TERM. 1
DIM MIN
MAX
2.05
2.18
1.15
0.69
1.00
MAX
0.081
0.086
0.045
0.027
0.039
−B−
A
B
C
D
F
1.75
1.75
0.85
0.40
0.70
−0.05
0.10
3.60
0.50
1.20
0.069
0.069
0.033
0.016
0.028
K
TERM. 2
H
J
+0.10 −0.002 +0.004
0.25
3.90
0.80
1.50
0.004
0.142
0.020
0.047
0.010
0.154
0.031
0.059
R
K
L
L
R
S
0.50 REF
0.019 REF
J
D
H
M
S
S
0.08 (0.003)
T
B
C
−T−
SOLDERING FOOTPRINT*
0.635
0.025
2.67
0.762
0.030
0.105
2.54
1.27
0.100
0.050
mm
inches
ǒ
Ǔ
SCALE 10:1
POWERMITE)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
1PMT5.0AT1/T3 Series
POWERMITE and COOLPACK are registered trademarks of and used under a license from Microsemi Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
1PMT5.0AT3/D
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