1PMT48AT1 [ONSEMI]

Zener Transient Voltage Suppressor POWERMITE Package; 齐纳瞬态电压抑制器POWERMITE套餐
1PMT48AT1
型号: 1PMT48AT1
厂家: ONSEMI    ONSEMI
描述:

Zener Transient Voltage Suppressor POWERMITE Package
齐纳瞬态电压抑制器POWERMITE套餐

瞬态抑制器 二极管 测试
文件: 总6页 (文件大小:61K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1PMT5.0AT1/T3 Series  
Zener Transient  
Voltage Suppressor  
POWERMITE Package  
The 1PMT5.0AT1/T3 Series is designed to protect voltage  
sensitive components from high voltage, high energy transients.  
Excellent clamping capability, high surge capability, low zener  
impedance and fast response time. The advanced packaging  
technique provides for a highly efficient micro miniature, space  
saving surface mount with its unique heat sink design. The  
POWERMITE has the same thermal performance as the SMA while  
being 50% smaller in footprint area, and delivering one of the lowest  
height profiles (1.1 mm) in the industry. Because of its small size, it is  
ideal for use in cellular phones, portable devices, business machines,  
power supplies and many other industrial/consumer applications.  
http://onsemi.com  
PLASTIC SURFACE MOUNT  
ZENER OVERVOLTAGE  
TRANSIENT SUPPRESSOR  
5 − 58 V  
200 W PEAK POWER  
1
2
Specification Features:  
Stand−off Voltage: 5 − 58 V  
Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A)  
− 175 W @ 1 ms (1PMT40A − 1PMT58A)  
1: CATHODE  
2: ANODE  
Maximum Clamp Voltage @ Peak Pulse Current  
Low Leakage  
Response Time is Typically < 1 ns  
ESD Rating of Class 3 (> 16 kV) per Human Body Model  
Low Profile − Maximum Height of 1.1 mm  
Integral Heat Sink/Locking Tabs  
1
POWERMITE  
CASE 457  
PLASTIC  
2
MARKING DIAGRAM  
D
Full Metallic Bottom Eliminates Flux Entrapment  
Small Footprint − Footprint Area of 8.45 mm  
Mxx  
1
2
2
CATHODE  
ANODE  
POWERMITE is JEDEC Registered as DO−216AA  
Cathode Indicated by Polarity Band  
Pb−Free Package is Available  
Mxx  
xx  
= Specific Device Code  
= 5 − 58  
= (See Table Next Page)  
= Date Code  
D
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
LEAD ORIENTATION IN TAPE:  
Cathode (Short) Lead to Sprocket Holes  
MOUNTING POSITION: Any  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
ORDERING INFORMATION  
Device  
Package  
Shipping  
1PMT5.0AT1  
1PMT5.0AT3  
POWERMITE 3,000/Tape & Reel  
POWERMITE 12,000/Tape & Reel  
1PMT5.0AT3G POWERMITE 12,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 7  
1PMT5.0AT3/D  
1PMT5.0AT1/T3 Series  
MAXIMUM RATINGS  
Rating  
Maximum P Dissipation, (PW−10/1000 ms) (Note 1) (1PMT5.0A − 1PMT36A)  
Symbol  
Value  
200  
Unit  
W
P
pk  
P
pk  
P
pk  
pk  
Maximum P Dissipation, (PW−10/1000 ms) (Note 1) (1PMT40A − 1PMT58A)  
175  
W
pk  
Maximum P Dissipation, (PW−8/20 ms) (Note 1)  
1000  
W
pk  
DC Power Dissipation @ T = 25°C (Note 2)  
Derate above 25°C  
Thermal Resistance from Junction−to−Ambient  
°P °  
500  
4.0  
248  
°mW  
mW/°C  
°C/W  
A
D
R
q
JA  
Thermal Resistance from Junction−to−Lead (Anode)  
R
35  
°C/W  
q
Janode  
Maximum DC Power Dissipation (Note 3)  
Thermal Resistance from Junction to Tab (Cathode)  
°P °  
3.2  
23  
W
°C/W  
D
R
q
Jcathode  
Operating and Storage Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
1. Non−repetitive current pulse at T = 25°C.  
A
2. Mounted with recommended minimum pad size, DC board FR−4.  
3. At Tab (Cathode) temperature, T = 75°C  
tab  
I
ELECTRICAL CHARACTERISTICS (T = 25°C unless  
A
I
F
otherwise noted, V = 3.5 V Max. @ I (Note 4) = 35 A)  
F
F
Symbol  
Parameter  
I
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
PP  
V
C
PP  
V
C
V
V
BR RWM  
V
I
V
F
R
T
V
RWM  
Working Peak Reverse Voltage  
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
F
I
PP  
I
Forward Current  
Uni−Directional TVS  
V
F
Forward Voltage @ I  
F
ELECTRICAL CHARACTERISTICS (T = 30°C unless otherwise noted, V = 1.25 Volts @ 200 mA)  
L
F
V
RWM  
V
BR  
@ I (V) (Note 6)  
I
T
I
R
@ V  
V
C
@ I  
I
PP  
(A)  
T
RWM  
PP  
(Note 5)  
5.0  
7.0  
12  
Min  
Nom  
6.7  
Max  
7.0  
(mA)  
10  
(mA)  
800  
500  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
(V)  
9.2  
12  
(Note 7)  
21.7  
16.7  
10.1  
7.7  
Device  
Marking  
MKE  
MKM  
MLE  
1PMT5.0AT1, T3  
1PMT7.0AT1, T3  
1PMT12AT1, T3  
1PMT16AT1, T3  
1PMT18AT1, T3  
1PMT22AT1, T3  
1PMT24AT1, T3  
1PMT26AT1, T3  
1PMT28AT1, T3  
1PMT30AT1, T3  
1PMT33AT1, T3  
1PMT36AT1, T3  
1PMT40AT1, T3  
1PMT48AT1, T3  
1PMT51AT1, T3  
1PMT58AT1, T3  
6.4  
7.78  
13.3  
17.8  
20.0  
24.4  
26.7  
28.9  
31.1  
33.3  
36.7  
40.0  
44.4  
53.3  
56.7  
64.4  
8.2  
8.6  
10  
14.0  
18.75  
21.0  
25.6  
28.1  
30.4  
32.8  
35.1  
38.7  
42.1  
46.8  
56.1  
59.7  
67.8  
14.7  
19.7  
22.1  
26.9  
29.5  
31.9  
34.4  
36.8  
40.6  
44.2  
49.1  
58.9  
62.7  
71.2  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
19.9  
26  
MLP  
16  
MLT  
18  
29.2  
35.5  
38.9  
42.1  
45.4  
48.4  
53.3  
58.1  
64.5  
77.4  
82.4  
93.6  
6.8  
MLX  
22  
5.6  
MLZ  
24  
5.1  
MME  
MMG  
MMK  
MMM  
MMP  
MMR  
MMX  
MMZ  
MNG  
26  
4.8  
28  
4.4  
30  
4.1  
33  
3.8  
36  
3.4  
40  
2.7  
48  
2.3  
51  
2.1  
58  
1.9  
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V  
) which should be equal to or greater  
RWM  
than the DC or continuous peak operating voltage level.  
6. V measured at pulse test current I at ambient temperature of 25°C.  
BR  
T
7. Surge current waveform per Figure 2 and derate per Figure 4.  
http://onsemi.com  
2
 
1PMT5.0AT1/T3 Series  
TYPICAL PROTECTION CIRCUIT  
Z
in  
LOAD  
V
in  
V
L
10,000  
1000  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE PEAK  
CURRENT DECAYS TO 50%  
t
r
OF I  
.
RSM  
100  
PEAK VALUE − I  
RSM  
t 10 ms  
rꢀ  
I
RSM  
2
HALF VALUE −  
50  
100  
10  
t
P
0
1.0  
10  
100  
t , PULSE WIDTH (ms)  
1000  
10,000  
0
1
2
3
4
t, TIME (ms)  
P
Figure 1. Pulse Rating Curve  
Figure 2. 10 X 1000 ms Pulse Waveform  
160  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
t
r
PEAK VALUE I  
@ 8 ms  
RSM  
140  
120  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
100  
80  
HALF VALUE I /2 @ 20 ms  
RSM  
60  
t
P
40  
20  
0
0
0
0
25  
50  
75  
100  
125  
150  
20  
40  
t, TIME (ms)  
60  
80  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 3. 8 X 20 ms Pulse Waveform  
Figure 4. Pulse Derating Curve  
http://onsemi.com  
3
1PMT5.0AT1/T3 Series  
3.5  
3
1
0.7  
0.5  
0.3  
0.2  
2.5  
PULSE WIDTH  
2
10 ms  
T
L
0.1  
0.07  
0.05  
1.5  
1 ms  
1
0.03  
0.02  
100 ms  
0.5  
0
10 ms  
10 20  
0.01  
0.1 0.2  
0.5  
1
2
5
50 100  
25  
50  
75  
100  
125  
150  
175  
D, DUTY CYCLE (%)  
T, TEMPERATURE (°C)  
Figure 5. Typical Derating Factor for Duty Cycle  
Figure 6. Steady State Power Derating  
10,000  
1000  
1.2  
1.0  
0.8  
0.6  
0.4  
MEASURED @ ZERO BIAS  
MEASURED @ 50% V  
100  
10  
RWM  
0.2  
0
−55  
25  
85  
150  
1
10  
WORKING PEAK REVERSE VOLTAGE (VOLTS)  
100  
T, TEMPERATURE (°C)  
Figure 7. Forward Voltage  
Figure 8. Capacitance versus Working Peak  
Reverse Voltage  
http://onsemi.com  
4
1PMT5.0AT1/T3 Series  
OUTLINE DIMENSIONS  
POWERMITE  
CASE 457−04  
ISSUE D  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,  
PROTRUSIONS OR GATE BURRS. MOLD FLASH,  
PROTRUSIONS OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
F
C
−A−  
M
S
S
C
0.08 (0.003)  
T
B
J
S
MILLIMETERS  
INCHES  
MIN  
TERM. 1  
DIM MIN  
MAX  
2.05  
2.18  
1.15  
0.69  
1.00  
MAX  
0.081  
0.086  
0.045  
0.027  
0.039  
−B−  
A
B
C
D
F
1.75  
1.75  
0.85  
0.40  
0.70  
−0.05  
0.10  
3.60  
0.50  
1.20  
0.069  
0.069  
0.033  
0.016  
0.028  
K
TERM. 2  
H
J
+0.10 −0.002 +0.004  
0.25  
3.90  
0.80  
1.50  
0.004  
0.142  
0.020  
0.047  
0.010  
0.154  
0.031  
0.059  
R
K
L
L
R
S
0.50 REF  
0.019 REF  
J
D
H
M
S
S
0.08 (0.003)  
T
B
C
−T−  
SOLDERING FOOTPRINT*  
0.635  
0.025  
2.67  
0.762  
0.030  
0.105  
2.54  
1.27  
0.100  
0.050  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
POWERMITE)  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
5
1PMT5.0AT1/T3 Series  
POWERMITE and COOLPACK are registered trademarks of and used under a license from Microsemi Corporation.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
1PMT5.0AT3/D  

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