2N5551TFR_技术文档

DATA SHEET

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NPN General-Purpose

Amplifier

TO−92−3

4.825x4.76

CASE 135AN

2N5551

E

B

C

Description

This device is designed for general−purpose high−voltage

amplifiers and gas discharge display drivers.

TO−92−3

4.83x4.76 LEADFORMED

CASE 135AR

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

E

Compliant

B

C

ABSOLUTE MAXIMUM RATINGS (Note 1)

MARKING DIAGRAM

Symbol

Parameter

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Value

Unit

V

CEO

V

CBO

V

EBO

160

A55

51(Y)

YWW

180

V

6

V

I

Collector Current − Continuous

600

mA

°C

C

T , T

Operating and Storage Temperature

(Note 2)

−55 to + 150

J

STG

A

= Assembly Location

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are limiting values above which the serviceability of any

semiconductor device may be impaired.

5551(Y) = Specific Device Code

Y

WW

= Year

= Work Week

2. These ratings are based on a maximum junction temperature of 150°C. These

are steady−state limits. onsemi should be consulted on applications involving

pulsed or low−duty cycle operations.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

1

Publication Order Number:

November, 2022 − Rev. 5

2N5551T/D

2N5551

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 3)

A

Max

625

5.0

Symbol

Characteristic

Unit

mW

P

D

Total Device Dissipation

Derate Above 25_C

mW/_C

_C/W

R

Thermal Resistance, Junction to Case

83.3

200

q

JC

R

Thermal Resistance, Junction to Ambient

JA

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)

A

Symbol

Parameter

Test Conditions

= 1.0 mA, I = 0

Min

160

180

6.0

Max

Unit

V

Collector−Emitter Breakdown Voltage

Collector−Base Breakdown Voltage

Emitter−Base Breakdown Voltage

Collector Cut−Off Current

I

V

(BR)CEO

(BR)CBO

(BR)EBO

C

E

B

V

= 100 mA, I = 0

E

= 10 mA, I = 0

V

C

I

V

= 120 V, I = 0

50

nA

mA

nA

CBO

CB

EB

E

= 120 V, I = 0 V, T = 100_C

E

A

I

Emitter Cut−Off Current

= 4.0 V, I = 0

C

EBO

ON CHARACTERISTICS

h

FE

DC Current Gain

I

= 1.0 mA, V = 5.0 V

80

C

CE

= 10 mA, V = 5.0 V

250

240

CE

= 10 mA, V = 5.0 V

180

CE

(for 2N5551YBU, 2N5551YTA)

I

C

I

C

I

C

I

C

I

C

= 50 mA, V = 5.0 V

30

CE

V

Collector−Emitter Saturation Voltage

Base−Emitter On Voltage

= 10 mA, I = 1.0 mA

0.15

0.20

1.0

V

CE(sat)

B

= 50 mA, I = 5.0 mA

B

= 10 mA, I = 1.0 mA

BE(sat)

B

= 50 mA, I = 5.0 mA

1.0

B

SMALL−SIGNAL CHARACTERISTICS

f

Current Gain Bandwidth Product

Output Capacitance

I

= 10 mA, V = 10 V, f = 100 MHz

100

50

MHz

pF

T

C

CE

C

V

= 10 V, I = 0, f = 1.0 MHz

6.0

20

obo

CB

BE

E

C

Input Capacitance

= 0.5 V, I = 0, f = 1.0 MHz

pF

ibo

C

H

Small−Signal Current Gain

Noise Figure

I

C

= 1.0 mA, V = 10 V, f = 1.0 kHz

250

8.0

fe

CE

NF

I

= 250 mA, V = 5.0 V,

dB

C

CE

R

= 1.0 kW, f = 10 Hz to 15.7 kHz

S

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3

3. PCB board size FR−4 76 x 114 x 0.6 T mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%.

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2

2N5551

TYPICAL PERFORMANCE CHARACTERISTICS

250

200

150

100

50

b = 10

125°C

100°C

V

CE

= 5 V

10

1

75°C

25°C

125°C

100°C

−40°C

0.1

0.01

75°C

25°C

−40°C

0

1

10

100

1

10

100

1000

I , Collector Current (mA)

C

I , Collector Current (mA)

C

Figure 2. Collector− Emitter Saturation

Figure 1. Typical Pulsed Current Gain

vs. Collector Current

Voltage vs. Collector Current

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.0

0.8

0.6

0.4

0.2

T = −40°C

A

−40°C

25°C

T = 25°C

A

T = 75°C

125°C

A

100°C

75°C

T = 100°C

A

T = 125°C

A

b = 10

1

10

100

1000

10

I , Collector Current (mA)

100

1

I , Collector Current (mA)

C

Figure 4. Base−Emitter On Voltage

Figure 3. Base−Emitter Saturation Voltage

vs. Collector Current

50

10

100

V

CB

= 100 V

10

C

IB

C

OB

1

25

50

75

100

125

0

1

2

3

4

5

6

7

8

9

10

T , Ambient Temperature (°C)

A

Reverse Bias Voltage (V)

Figure 6. Input and Output Capacitance

vs. Reverse Voltage

Figure 5. Collector Cut−Off Current

vs. Ambient Temperature

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3

2N5551

TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)

260

240

220

200

180

160

16

I

= 1.0 mA

FREG = 20 MHz

= 10 V

C

V

CE

12

8

4

0

1

10

I ,Collector Current (mA)

50

0.1

1

10

100

1000

Resistance (kW)

C

Figure 8. Small Signal Current Gain

vs. Collector Current

Figure 7. Collector−Emitter Breakdown Voltage

with Resistance between Emitter−Base

700

600

500

400

300

200

100

0

25

50

75

100

125

150

Temperature (°C)

Figure 9. Power Dissipation vs. Ambient Temperature

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4

2N5551

ORDERING INFORMATION (Note 5)

Part Number

†

Top Mark

5551

Package

Shipping

2N5551TA

TO−92−3, Case 135AR (Pb−Free)

TO−92−3, Case 135AN (Pb−Free)

TO−92−3, Case 135AR (Pb−Free)

2000 / Ammo Pack

2000 / Tape & Reel

10000 / Bulk Bag

2000 / Ammo Pack

2N5551TFR

5551

2N5551TF

5551

2N5551BU

5551

2N5551YBU

5551Y

2N5551YTA

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

5. Suffix “−Y” means h 180~240 in 2N5551 (Test condition: I = 10 mA, V = 5.0 V)

FE

C

CE

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5

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−92 3 4.825x4.76

CASE 135AN

ISSUE O

DATE 31 JUL 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13880G

TO−92 3 4.825X4.76

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−92 3 4.83x4.76 LEADFORMED

CASE 135AR

ISSUE O

DATE 30 SEP 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13879G

TO−92 3 4.83X4.76 LEADFORMED

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

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For additional information, please contact your local Sales Representative at

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


型号：	2N5551TFR
厂家：	ONSEMI
描述：	Small Signal NPN Bipolar Transistor 放大器晶体管
文件：	总8页 (文件大小：209K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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