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2N6043 [ONSEMI]

Plastic Medium-Power Complementary Silicon Transistors; 塑料中功率互补硅晶体管
2N6043
型号： 2N6043
厂家： ONSEMI    ONSEMI
描述：

Plastic Medium-Power Complementary Silicon Transistors
塑料中功率互补硅晶体管

晶体 晶体管 功率双极晶体管 放大器 局域网
文件： 总8页 (文件大小：115K)
中文：  中文翻译
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ON Semiconductor)  
PNP  
2N6040  
Plastic Medium-Power  
Complementary Silicon  
Transistors  
. . . designed for general–purpose amplifier and low–speed  
switching applications.  
2N6042  
*
*
2N6043  
NPN  
2N6045  
• High DC Current Gain –  
h
= 2500 (Typ) @ I = 4.0 Adc  
FE  
• Collector–Emitter Sustaining Voltage – @ 100 mAdc –  
= 60 Vdc (Min) – 2N6040, 2N6043  
C
*ON Semiconductor Preferred Device  
V
CEO(sus)  
= 100 Vdc (Min) – 2N6042, 2N6045  
• Low Collector–Emitter Saturation Voltage –  
= 2.0 Vdc (Max) @ I = 4.0 Adc – 2N6043,44  
DARLINGTON  
8 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60–100 VOLTS  
75 WATTS  
V
CE(sat)  
C
= 2.0 Vdc (Max) @ I = 3.0 Adc – 2N6042, 2N6045  
C
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
MAXIMUM RATINGS (1)  
2N6040  
2N6043  
2N6042  
2N6045  
Rating  
Symbol  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
60  
60  
100  
100  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
V
CB  
EB  
V
5.0  
4
Collector Current – Continuous  
Peak  
I
C
8.0  
16  
Base Current  
I
B
120  
mAdc  
STYLE 1:  
Total Power Dissipation @ T = 25_C  
P
75  
0.60  
Watts  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
C
D
Derate above 25_C  
W/_C  
1
4. COLLECTOR  
Operating and Storage Junction,  
Temperature Range  
T , T  
J stg  
–65 to +150  
_C  
2
3
THERMAL CHARACTERISTICS  
Characteristic  
CASE 221A–09  
TO–220AB  
Symbol  
Max  
1.67  
57  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction to Case  
θ
JC  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
θ
JA  
T
A
T
C
4.0 80  
3.0 60  
T
C
2.0 40  
1.0 20  
T
A
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 4  
2N6040/D  
2N6040 2N6042 2N6043 2N6045  
*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
(I = 100 mAdc, I = 0)  
V
Vdc  
CEO(sus)  
2N6040, 2N6043  
2N6042, 2N6045  
60  
100  
–
–
C
B
Collector Cutoff Current  
I
µA  
µA  
CEO  
(V  
CE  
(V  
CE  
= 60 Vdc, I = 0)  
2N6040, 2N6043  
2N6042, 2N6045  
–
–
20  
20  
B
= 100 Vdc, I = 0)  
B
Collector Cutoff Current  
I
CEX  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
= 60 Vdc, V  
= 100 Vdc, V  
= 60 Vdc, V  
= 80 Vdc, V  
BE(off)  
= 100 Vdc, V  
= 1.5 Vdc)  
BE(off)  
BE(off)  
BE(off)  
2N6040, 2N6043  
2N6042, 2N6045  
2N6040, 2N6043  
2N6041, 2N6044  
2N6042, 2N6045  
–
–
–
–
–
20  
20  
200  
200  
200  
= 1.5 Vdc)  
= 1.5 Vdc, T = 150_C)  
C
C
C
= 1.5 Vdc, T = 150_C)  
= 1.5 Vdc, T = 150_C)  
BE(off)  
Collector Cutoff Current  
I
µA  
CBO  
(V  
CB  
= 60 Vdc, I = 0)  
2N6040, 2N6043  
2N6042, 2N6045  
–
20  
E
(V  
CB  
= 100 Vdc, I = 0)  
–
–
E
20  
Emitter Cutoff Current (V  
= 5.0 Vdc, I = 0)  
I
EBO  
2.0  
mAdc  
–
BE  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 4.0 Adc, V  
= 4.0 Vdc)  
= 4.0 Vdc)  
= 4.0 Vdc)  
2N6040, 2N6043,  
2N6042, 2N6045  
All Types  
1000  
1000  
100  
20.000  
20,000  
–
C
CE  
CE  
CE  
(I = 3.0 Adc, V  
C
(I = 8.0 Adc, V  
C
Collector–Emitter Saturation Voltage  
(I = 4.0 Adc, I = 16 mAdc)  
V
Vdc  
CE(sat)  
BE(sat)  
2N6040, 2N6043,  
2N6042, 2N6045  
All Types  
–
–
–
2.0  
2.0  
4.0  
C
B
(I = 3.0 Adc, I = 12 mAdc)  
C
C
B
B
(I = 8.0 Adc, I = 80 Adc)  
Base–Emitter Saturation Voltage (I = 8.0 Adc, I = 80 mAdc)  
V
–
–
4.5  
2.8  
Vdc  
Vdc  
C
B
Base–Emitter On Voltage (I = 4.0 Adc, V  
C
= 4.0 Vdc)  
V
BE(on)  
CE  
DYNAMIC CHARACTERISTICS  
Small Signal Current Gain (I = 3.0 Adc, V  
C
= 4.0 Vdc, f = 1.0 MHz)  
|h  
fe  
|
4.0  
–
CE  
Output Capacitance  
2N6040/2N6042  
2N6043/2N6045  
C
–
–
300  
200  
pF  
–
ob  
(V  
CB  
= 10 Vdc, I = 0, f = 0.1 MHz)  
E
Small–Signal Current Gain (I = 3.0 Adc, V  
C
= 4.0 Vdc, f = 1.0 kHz)  
h
300  
–
CE  
fe  
*Indicates JEDEC Registered Data.  
5.0  
t
s
3.0  
2.0  
V
CC  
-ā30 V  
R
D
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS  
C
MUST BE FAST RECOVERY TYPE, eg:  
B
1
t
f
ă1N5825 USED ABOVE I ≈ 100 mA  
B
1.0  
R
C
SCOPE  
ăMSD6100 USED BELOW I ≈ 100 mA  
B
0.7  
0.5  
TUT  
V
2
approx  
+ā8.0 V  
R
B
0.3  
0.2  
t
r
D
V
= 30 V  
1
≈ 8.0 k  
CC  
I /I = 250  
51  
≈Ă120  
0
C B  
B1 B2  
= 25°C  
I
= I  
V
1
+ā4.0 V  
0.1  
0.07  
0.05  
approx  
-12 V  
T
J
PNP  
NPN  
25 µs  
t
@ V  
= 0 V  
d
BE(off)  
for t and t , D is disconnected  
d
r
1
and V = 0  
2
t , t ≤ 10 ns  
r f  
DUTY CYCLE = 1.0%  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
For NPN test circuit reverse all polarities and D1.  
I , COLLECTOR CURRENT (AMP)  
C
Figure 2. Switching Times Equivalent Circuit  
Figure 3. Switching Times  
http://onsemi.com  
2
2N6040 2N6042 2N6043 2N6045  
1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
P
(pk)  
θ
θ
(t) = r(t) θ  
JC  
JC  
JC  
= 1.67°C/W  
0.1  
0.07  
0.05  
0.05  
0.02  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
t
1
READ TIME AT t  
1
t
2
T
- T = P θ (t)  
J(pk)  
C
(pk) JC  
0.03  
0.02  
0.01  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.01  
0.01  
0.02 0.03 0.05  
0.1  
0.2 0.3 0.5  
1.0  
2.0 3.0 5.0  
10  
20 30  
50  
100  
200 300 500  
1000  
t, TIME OR PULSE WIDTH (ms)  
Figure 4. Thermal Response  
20  
10  
There are two limitations on the power handling ability of  
a transistor: average junction temperature and second  
100 µs  
breakdown. Safe operating area curves indicate I – V  
C
CE  
5.0  
500 µs  
1.0Ăms  
5.0Ăms  
limits of the transistor that must be observed for reliable  
operation; i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
2.0  
1.0  
0.5  
dc  
T
= 150°C  
J
BONDING WIRE LIMITED  
THERMALLY LIMITED @ T = 25°C  
(SINGLE PULSE)  
SECOND BREAKDOWN LIMITED  
The data of Figure 5 is based on T  
variable depending on conditions. Second breakdown pulse  
= 150_C; T is  
J(pk)  
C
C
0.2  
0.1  
limits are valid for duty cycles to 10% provided T  
J(pk)  
may be calculated from the data in  
Figure 4. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
CURVES APPLY BELOW RATED V  
CEO  
2N6040, 2N6043  
2N6045  
< 150_C.  
T
J(pk)  
0.05  
0.02  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
CE  
Figure 5. Active–Region Safe Operating Area  
300  
10,000  
5000  
T
= 25°C  
J
3000  
2000  
200  
1000  
500  
C
ob  
T
= 25°C  
= 4.0 Vdc  
= 3.0 Adc  
C
100  
70  
300  
200  
V
CE  
I
C
C
ib  
100  
50  
50  
PNP  
NPN  
30  
20  
PNP  
NPN  
10  
1.0  
30  
0.1  
2.0  
5.0 10  
20  
50 100 200  
500 1000  
0.2  
0.5  
1.0 2.0  
5.0 10  
20  
50 100  
f, FREQUENCY (kHz)  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 7. Capacitance  
Figure 6. Small–Signal Current Gain  
http://onsemi.com  
3
2N6040 2N6042 2N6043 2N6045  
PNP  
NPN  
2N6040, 2N6042  
2N6043, 2N6045  
20,000  
10,000  
20,000  
V
CE  
= 4.0 V  
V
CE  
= 4.0 V  
10,000  
7000  
5000  
7000  
5000  
T
= 150°C  
T
= 150°C  
25°C  
J
J
3000  
2000  
3000  
2000  
25°C  
1000  
1000  
700  
700  
500  
-ā55°C  
-ā55°C  
500  
300  
200  
300  
200  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
I , COLLECTOR CURRENT (AMP)  
C
I , COLLECTOR CURRENT (AMP)  
C
Figure 8. DC Current Gain  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
3.0  
T
= 25°C  
T = 25°C  
J
J
2.6  
2.2  
1.8  
1.4  
1.0  
I
= 2.0 A  
I = 2.0 A  
C
6.0 A  
6.0 A  
4.0 A  
C
4.0 A  
0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
I , BASE CURRENT (mA)  
B
I , BASE CURRENT (mA)  
B
Figure 9. Collector Saturation Region  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
3.0  
T
= 25°C  
T = 25°C  
J
J
2.5  
2.0  
1.5  
1.0  
0.5  
V
@ I /I = 250  
C B  
BE(sat)  
V
@ V = 4.0 V  
CE  
BE  
V
BE  
@ V = 4.0 V  
CE  
V
@ I /I = 250  
C B  
BE(sat)  
V
@ I /I = 250  
C B  
CE(sat)  
V
@ I /I = 250  
C B  
CE(sat)  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.010  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
I , COLLECTOR CURRENT (AMP)  
C
I , COLLECTOR CURRENT (AMP)  
C
Figure 10. “On” Voltages  
http://onsemi.com  
4
2N6040 2N6042 2N6043 2N6045  
PACKAGE DIMENSIONS  
TO–220AB  
CASE 221A–09  
ISSUE AA  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
SEATING  
PLANE  
–T–  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
C
B
F
T
S
4
1
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.46  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
---  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.64  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
---  
A
K
Q
Z
A
B
C
D
F
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.018  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
---  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.025  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
---  
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
STYLE 1:  
D
U
V
Z
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
N
0.080  
2.04  
4. COLLECTOR  
http://onsemi.com  
5
2N6040 2N6042 2N6043 2N6045  
Notes  
http://onsemi.com  
6
2N6040 2N6042 2N6043 2N6045  
Notes  
http://onsemi.com  
7
2N6040 2N6042 2N6043 2N6045  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make  
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
2N6040/D  

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