2N6399 [ONSEMI]

Silicon Controlled Rectifiers; 可控硅整流器器


型号：	2N6399
厂家：	ONSEMI
描述：	Silicon Controlled Rectifiers 可控硅整流器器触发装置可控硅整流器局域网
文件：	总8页 (文件大小：79K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N6394 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies.

• Glass Passivated Junctions with Center Gate Geometry for Greater

Parameter Uniformity and Stability

http://onsemi.com

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

SCRs

12 AMPERES RMS

50 thru 800 VOLTS

• Device Marking: Logo, Device Type, e.g., 2N6394, Date Code

*MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off–State Voltage (Note 1.)

DRM,

Volts

(T = –40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

RRM

MARKING

2N6394

DIAGRAM

2N6395

2N6397

2N6399

100

400

800

On-State RMS Current

(180° Conduction Angles; T = 90°C)

T(RMS)

TO–220AB

CASE 221A

STYLE 3

YY WW

639x

Peak Non-Repetitive Surge Current

100

TSM

(1/2 Cycle, Sine Wave, 60 Hz, T = 90°C)

Circuit Fusing (t = 8.3 ms)

Forward Peak Gate Power

I t

A s

= 4, 5, 7 or 9

YY = Year

Watts

WW = Work Week

(Pulse Width ≤ 1.0 µs, T = 90°C)

Forward Average Gate Power

0.5

2.0

G(AV)

PIN ASSIGNMENT

Cathode

(t = 8.3 ms, T = 90°C)

Forward Peak Gate Current

Anode

(Pulse Width ≤ 1.0 µs, T = 90°C)

Gate

Operating Junction Temperature Range

–40 to

+125

°C

Anode

Storage Temperature Range

stg

–40 to

+150

°C

ORDERING INFORMATION

*Indicates JEDEC Registered Data

1. V

and V

for all types can be applied on a continuous basis. Ratings

Device

Package

TO220AB

Shipping

500/Box

DRM

RRM

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

2N6394

2N6395

2N6397

2N6399

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

April, 2001 – Rev. 3

2N6394/D

2N6394 Series

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

2.0

Unit

°C/W

°C

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

260

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

*Peak Repetitive Forward or Reverse Blocking Current

(V = Rated V or V , Gate Open) T = 25°C

, I

DRM RRM

–

2.0

µA

DRM

RRM

T = 125°C

ON CHARACTERISTICS

*Peak Forward On–State Voltage (Note 2.)

(I = 24 A Peak)

–

1.7

5.0

0.7

–

2.2

1.5

–

Volts

*Gate Trigger Current (Continuous dc)

(V = 12 Vdc, R = 100 Ohms)

*Gate Trigger Voltage (Continuous dc)

(V = 12 Vdc, R = 100 Ohms)

–

Volts

Gate Non–Trigger Voltage

0.2

–

(V = 12 Vdc, R = 100 Ohms, T = 125°C)

*Holding Current

(V = 12 Vdc, Initiating Current = 200 mA, Gate Open)

6.0

1.0

2.0

Turn-On Time

–

µs

(I = 12 A, I = 40 mAdc, V = Rated V )

DRM

Turn-Off Time (V = Rated V

)

µs

DRM

(I = 12 A, I = 12 A)

–

(I = 12 A, I = 12 A, T = 125°C)

DYNAMIC CHARACTERISTICS

Critical Rate–of–Rise of Off-State Voltage Exponential

(V = Rated V , T = 125°C)

dv/dt

–

V/µs

DRM

*Indicates JEDEC Registered Data

2. Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

http://onsemi.com

2N6394 Series

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol

Parameter

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak On State Voltage

DRM

on state

at V

RRM

+ Voltage

Holding Current

at V

DRM

Reverse Blocking Region

(off state)

DRM

Forward Blocking Region

(off state)

Reverse Avalanche Region

Anode –

130

125

120

115

110

105

100

180°

α = CONDUCTION ANGLE

90°

60°

α = 30°

8.0

6.0

4.0

T ≈ 125°C

60°

α = 30°

2.0

90°

180°

7.0

1.0

2.0

3.0

4.0

5.0

6.0

8.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

, AVERAGE ONĆSTATE FORWARD CURRENT (AMPS)

T(AV)

, AVERAGE ONĆSTATE CURRENT (AMPS)

T(AV)

Figure 1. Current Derating

Figure 2. Maximum On–State Power Dissipation

http://onsemi.com

2N6394 Series

100

T = 25°C

125°C

7.0

5.0

3.0

2.0

100

1 CYCLE

1.0

0.7

0.5

0.3

0.2

T = 125°C

f = 60 Hz

SURGE IS PRECEDED AND

FOLLOWED BY RATED CURRENT

0.1

1.0

2.0

3.0

4.0

6.0

8.0 10

0.4

1.2

2.0

2.8

3.6

4.4

5.2

6.0

, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

NUMBER OF CYCLES

Figure 3. On–State Characteristics

Figure 4. Maximum Non–Repetitive Surge Current

1.0

0.7

0.5

0.3

0.2

= R _JC• r(t)

JC(t)

0.1

0.07

0.05

0.03

0.02

0.01

0.1

0.2 0.3 0.5

1.0

2.0 3.0

5.0

20 30

100

200 300 500

1.0 k

2.0 k 3.0 k 5.0 k

10 k

t, TIME (ms)

Figure 5. Thermal Response

http://onsemi.com

2N6394 Series

TYPICAL CHARACTERISTICS

300

200

3.0

OFFĆSTATE VOLTAGE = 12 V

2.0

100

1.0

0.7

0.5

T = -40°C

25°C

7.0

5.0

100°C

3.0

0.3

0.2

0.5 1.0

2.0

5.0

50 100

200

-40 -20

100 120 140 160

PULSE WIDTH (ms)

T , JUNCTION TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current

versus Pulse Width

Figure 7. Typical Gate Trigger Current

versus Temperature

1.1

1.0

0.9

0.8

0.7

0.6

OFFĆSTATE VOLTAGE = 12 V

7.0

5.0

0.5

0.4

3.0

-60 -40 -20

100 120 140

-60 -40 -20

100 120 140

T , JUNCTION TEMPERATURE (°C)

Figure 8. Typical Gate Trigger Voltage

versus Temperature

Figure 9. Typical Holding Current

versus Temperature

http://onsemi.com

2N6394 Series

PACKAGE DIMENSIONS

TO–220AB

CASE 221A–07

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.55

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.022

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

0.080

2.04

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

http://onsemi.com

2N6394 Series

Notes

http://onsemi.com

2N6394 Series

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment:

CENTRAL/SOUTH AMERICA:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)

Email: ONlit–spanish@hibbertco.com

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

Toll–Free from Mexico: Dial 01–800–288–2872 for Access –

then Dial 866–297–9322

ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support

Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)

Toll Free from Hong Kong & Singapore:

Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

001–800–4422–3781

EUROPE: LDC for ON Semiconductor – European Support

German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)

Email: ONlit–german@hibbertco.com

French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)

Email: ONlit–french@hibbertco.com

Email: ONlit–asia@hibbertco.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)

Email: ONlit@hibbertco.com

ON Semiconductor Website: http://onsemi.com

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

For additional information, please contact your local

Sales Representative.

*Available from Germany, France, Italy, UK, Ireland

2N6394/D

http://onsemi.com

2N6399 [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E