2N6517BU [ONSEMI]
500 mA High Voltage Bipolar Junction Transistors;
| 型号： | 2N6517BU |
| 厂家： | 
ONSEMI |
| 描述： | 500 mA High Voltage Bipolar Junction Transistors 晶体管 |
| 文件： | 总7页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Epitaxial Silicon
Transistor
2N6517
Features
• High Voltage Transistor
www.onsemi.com
• Collector Dissipation: PC(max) = 625 mW
• Complement to 2N6520
• Suffix “−C” means Center Collector (1. Emitter 2. Collector 3. Base)
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
Unit
V
CBO
Collector−Base Voltage
V
1
2
1
2
3
2N6517
350
400
3
2N6517C
TO−92 3 4.825x4.76
TO−92 3 4.83x4.76
LEADFORMED
CASE 135AR
V
V
Collector−Emitter Voltage
2N6517
V
CEO
EBO
CASE 135AN
350
400
2N6517C
Emitter−Base Voltage
Collector Current
6
500
V
MARKING DIAGRAM
I
C
mA
mW
°C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
625
C
A/2N
6517
YWW
T
J
150
T
STG
−55 ~ 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1: Emitter
2: Base
3: Collector
1
2
3
A
= Assembly Code
= Device Code
= Date Code
2N6517/2N6517C
YWW
ORDERING INFORMATION
Device
Package
Shipping
2N6517BU
2N6517TA
2N6517CTA
TO−92 3
(Pb−Free)
10000 /
Bulk Bag
TO−92 3
(Pb−Free)
2000 /
Fan−Fold
TO−92 3
2000 /
(Pb−Free)
Fan−Fold
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2021 − Rev. 3
2N6517/D
2N6517
ELECTRICAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Conditions
= 100 mA, I = 0
Min.
Max.
Unit
BV
BV
BV
Collector−Base Breakdown Voltage
V
CBO
CEO
EBO
2N6517
I
I
350
400
−
−
C
C
E
2N6517C
= 100 mA, I = 0
E
Collector−Emitter Breakdown Voltage*
V
2N6517
2N6517C
I
C
I
C
= 1 mA, I = 0
350
400
−
−
B
= 1 mA, I = 0
B
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Emitter Cut−Off Current
I = 10 mA, I = 0
6
−
−
−
V
E
C
I
V
= 250 V, I = 0
50
50
nA
nA
CBO
CB
EB
E
I
V
= 5 V, I = 0
C
EBO
h
FE
DC Current Gain*
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517C
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
= 10 V, I = 1 mA
20
30
30
20
15
50
−
−
C
= 10 V, I = 10 mA
C
= 10 V, I = 30 mA
200
200
−
C
= 10 V, I = 50 mA
C
= 10 V, I = 100 mA
C
= 10 V, I = 5 mA
200
C
V
V
(sat)
(sat)
Collector−Emitter Saturation Voltage
I
I
I
I
= 10 mA, I = 1 mA
−
−
−
−
0.3
0.35
0.5
1
V
V
CE
C
C
C
C
B
= 20 mA, I = 2 mA
B
= 30 mA, I = 3 mA
B
= 50 mA, I = 5 mA
B
Base−Emitter Saturation Voltage
I
C
I
C
I
C
= 10 mA, I = 1 mA
−
−
−
0.75
0.85
0.9
BE
B
= 20 mA, I = 2 mA
B
= 30 mA, I = 3 mA
B
C
f
Output Capacitance
V
= 20 V, I = 0, f = 1 MHz
−
40
−
6
200
2
pF
MHz
V
ob
CB
E
Current Gain Bandwidth Product*
Base−Emitter On Voltage
I
C
I
C
= 10 mA, V = 20 V, f = 20 MHz
CE
T
V
(on)
= 100 mA, V = 10 V,
CE
BE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
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2
2N6517
TYPICAL PERFORMANCE CHARACTERISTICS
1000
100
10
1000
V
= 10 V
I
C
= 10 I
B
CE
100
10
T
A
= 25°C
T
= 75°C
A
T
A
= 125°C
T
A
= 75°C
T
A
= 125°C
1
1
T
A
= 25°C
0.1
0.1
1
10
100
1000
1
10
100
1000
I , Collector Current (mA)
C
I , Collector Current (mA)
C
Figure 2. Saturation Voltage
Figure 1. DC Current Gain
100
I
C
= 10 I
B
T
A
= 125°C
10
1
T
A
= 25°C
1
T
A
= 75°C
T
A
= 125°C
0.1
T
A
= 75°C
0.01
0.001
T
A
= 25°C
0.1
1
2
3
4
5
6
1
10
100
1000
V
EB
, Emitter−Base Voltage (V)
I , Collector Current (mA)
C
Figure 4. Emitter Cut Off Current
Figure 3. Saturation Voltage
10000
1.6
1.4
1.2
1.0
V
= 10 V
CE
T = 25°C
A
1000
100
10
T
= 125°C
A
T
= 75°C
= 25°C
A
0.8
0.6
0.4
1
T
A
0.1
50
100
150
200
250
300
350
1
10
100
1000
V
CB
, Collector−Base Voltage (V)
I , Collector Current (mA)
C
Figure 5. Collector Cut Off Current
Figure 6. Base−Emitter On Voltage
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3
2N6517
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
50
2.0
f = 1 MHz
f = 1 MHz
45
40
35
30
25
20
1.8
1.6
1.4
1.2
1.0
0
20
40
60
80
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
CB
, Collector−Base Voltage (V)
V
EB
, Emitter−Base Voltage (V)
Figure 8. Input Capacitance
Figure 7. Output Capacitance
100
1000
t
t
ON
r
10
100
t
d
V
CC
= 100 V
I
C
= 5I = −5I , T = 25°C
B1 B2 A
1
10
1
10
100
10
100
I , Collector Current (mA)
C
I , Collector Current (mA)
C
Figure 9. Current Gain Bandwidth Product
Figure 10. Resistive Load Switching
10000
t
OFF
t
stg
1000
100
10
t
f
V
= 100 V
CC
I
C
= 5I = −5I , T = 25°C
B1 B2 A
10
100
I , Collector Current (mA)
C
Figure 11. Resistive Load Switching
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO−92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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