2N7002KW [ONSEMI]

N沟道增强模型场效应晶体管;


型号：	2N7002KW
厂家：	ONSEMI
描述：	N沟道增强模型场效应晶体管 PC 开关光电二极管晶体管场效应晶体管
文件：	总6页 (文件大小：259K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N7002KW

N-Channel Enhancement

Mode Field Effect

Transistor

Features

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• Low On−Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra−Small Surface Mount Package

• These Devices are Pb−Free and are RoHS Compliant

• ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V

as per JESD22 C101

SC−70

3 LEAD

CASE 419AB

MARKING DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−Source Voltage

Symbol

Value

Unit

7KW

DSS

GSS

Gate−Source Voltage

7KW = Specific Device Marking

Maximum Drain Current

Continuous

310

195

1.2

T = 100°C

Pulsed

Operating Junction Temperature Range

Storage Temperature Range

−55 to

+150

°C

−55 to

+150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

ORDERING INFORMATION^†

Total Device Dissipation

300

2.4

Derating above T = 25°C

mW/°C

†

Device

2N7002KW

Package

Shipping

Thermal Resistance,

Junction to Ambient*

410

°C/W

SC−70

3000 / Tape &

Reel

*Device mounted on FR−4 PCB, 1″ x 0.85″ x 0.062″. Minimum land pad size

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2018 − Rev. 1

2N7002KW/D

2N7002KW

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

= 0 V, I = 10 mA

−

DSS

Zero Gate Voltage Drain Current

= 60 V, V = 0 V

−

1.0

0.5

DSS

= 60 V, V = 0 V, T = 125°C

Gate−Body Leakage

= 0 V, V =

20 V

−

GSS

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

= V , I = 250 mA

1.1

−

2.1

GS(th)

DS(on)

Static Drain−Source On−Resistance

= 10 V, I = 500 mA

−

1.6

2.4

= 10 V, I = 500 mA, T = 100°C

= 5 V, I = 50 mA

= 5 V, I = 50 mA, T = 100°C

DS(on)

Drain−Source On−Voltage

= 10 V, I = 500 mA

−

3.75

1.5

= 5 V, I = 50 mA

On−State Drain Current

= 10 V, V = 2 V

500

−

D(on)

Forward Transconductance

= 2 V, I = 0.2 A

DYNAMIC CHARACTERISTICS

Input Capacitance

= 25 V, V = 0 V, f = 1.0 MHz

−

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

= 30 V, R = 150 W, V = 10 V,

−

d(on)

d(off)

= 200 mA, R

= 25 W

GEN

DRAIN−SOURCE DIODE CHARACTERISTICS

Maximum Continuous Drain−Source Diode Forward Current

Maximum Pulsed Drain−Source Diode Forward Current

−

115

0.8

1.1

Drain−Source Diode Forward Voltage

= 0 V, I = 115 mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

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2N7002KW

TYPICAL PERFORMANCE CHARACTERISTICS

2.2

2.4

2.1

1.8

1.5

1.2

0.9

0.6

0.3

0.0

_GS= 10V

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

V_GS

= 10V

_D= 500mA

V_GS= 5V

_D= 50mA

V_GS= 3V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

−50

100

150

T_J. Junction Temperature ( ^oC)

V_DS. Drain−Source Voltage (V)

Figure 1. On−Region Characteristics

Figure 2. On−Resistance Variation with

Temperature

3.0

2.5

2.0

1.5

1.0

0.5

V_GS= 4V

4.5V

V_GS= 10V

V_GS= 7V

T_A= 125^oC

T_A= 25^oC

10V

T_A= −55^oC

0.0

0.5

1.0

1.5

2.0

0.0

0.5

1.0

1.5

2.0

I_D. Drain−Source Current(A)

I_D. Drain Current (A)

Figure 3. On−Resistance Variation with Gate

Figure 4. On−Resistance Variation with Drain

Voltage and Drain Current

Current and Temperature

1.10

3.5

V_DS= V_GS

V_DS= 10V

T_A= −55(^oC)

1.05

1.00

0.95

0.90

0.85

0.80

0.75

3.0

2.5

2.0

1.5

1.0

0.5

0.0

T_A= 25(^oC)

I_D= 1mA

T_A= 125(^oC)

I_D= 0.25mA

−25

100

125

V_GS. Gate−Source Voltage (V)

T_J. Junction Temperature ( ^oC)

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with

Temperature

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2N7002KW

TYPICAL PERFORMANCE CHARACTERISTICS

10000

1.100

1.075

1.050

1.025

1.000

0.975

0.950

0.925

V_GS= 0 V

I_D=250uA

1000

100

T_A=125^oC

T_A=25^oC

T_A=−55^oC

0.1

−25

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

T_J, Junction Temperatture( ^oC)

. Body Diode Forward Voltage [V]

Figure 7. Breakdown Voltage Variation with

Temperature

Figure 8. Body Diode Forward Voltage

Variation with Source Current and

Temperature

100

_DS= 25V

ISS

I_D= 500mA

C_OSS

C_RSS

I_D= 115mA

0.2

f = 1MHZ

I_D= 280mA

_GS= 0V

100

0.0

0.4

0.6

0.8

1.0

V_DS. Drain to Source Voltage (V)

Qg. Gate Charge (nC)

Figure 9. Capacitance Variation

Figure 10. Gate Charge Characteristics

10⁰

10⁻¹

10⁻²

10⁻³

10⁻⁴

100ms

50%

20%

1ms

10ms

100ms

Rthja(t)=r(t)*Rthja

Rthja=410 ^oC/W

R_DS(on)Limit

0.1

10%

Vgs=10V

Single Pulse

Rthja=410^oC/W

D=1%

T = 25^oC

Single Pulse

0.01

10⁻¹

10⁰

10¹

10²

1E−4

1E−3

0.01

0.1

100

1000

t1, time(sec)

V_DS, Drain−Source Voltage [V]

Figure 11. Maximum Safe Operating Area

Figure 12. Transient Thermal Response Curve

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SC−70, 3 Lead, 1.25x2

CASE 419AB

ISSUE A

DATE 13 FEB 2023

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON34256E

SC−70, 3 LEAD, 1.25X2

PAGE 1 OF 1

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