2N7002LT7G [ONSEMI]

SOT23，N沟道MOSFET - 60V 115MA 7.5Ohm ;


型号：	2N7002LT7G
厂家：	ONSEMI
描述：	SOT23，N沟道MOSFET - 60V 115MA 7.5Ohm 光电二极管小信号场效应晶体管
文件：	总4页 (文件大小：62K)
中文：	中文翻译
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2N7002L

Small Signal MOSFET

60 V, 115 mA, N−Channel SOT−23

Features

• Pb−Free Packages are Available

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MAXIMUM RATINGS

MAX

I MAX

(BR)DSS

DS(on)

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

DSS

7.5 W @ 10 V,

60 V

115 mA

500 mA

Drain−Gate Voltage (R = 1.0 MW)

DGR

Vdc

Drain Current

− Continuous T = 25°C (Note 1)

− Continuous T = 100°C (Note 1)

±ꢀ115

±ꢀ75

±ꢀ800

mAdc

N−Channel

− Pulsed (Note 2)

Gate−Source Voltage

− Continuous

±ꢀ20

±ꢀ40

Vdc

Vpk

GSM

− Non−repetitive (t ≤ 50 ms)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

& PIN ASSIGNMENT

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Drain

Total Device Dissipation FR−5 Board

225

1.8

mW/°C

(Note 3) T = 25°C

Derate above 25°C

702

Thermal Resistance, Junction to Ambient

Total Device Dissipation

556

300

°C/W

SOT−23

CASE 318

STYLE 21

mW/°C

Alumina Substrate,(Note 4) T = 25°C

Derate above 25°C

Gate

Source

2.4

702

= Device Code

= Work Week

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

417

°C/W

°C

T , T

−ꢀ55 to

stg

+150

ORDERING INFORMATION

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

3. FR−5 = 1.0 x 0.75 x 0.062 in.

†

Device

Package

Shipping

2N7002LT1

2N7002LT3

2N7002LT1G

2N7002LT3G

3000 Tape & Reel

10,000 Tape & Reel

3000 Tape & Reel

10,000 Tape & Reel

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

SOT−23

(Pb−free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

July, 2004 − Rev. 2

2N7002L/D

2N7002L

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

−

Vdc

(BR)DSS

(V = 0, I = 10 mAdc)

Zero Gate Voltage Drain Current

(V = 0, V = 60 Vdc)

T = 25°C

T = 125°C

−

1.0

500

mAdc

nAdc

DSS

Gate−Body Leakage Current, Forward

−

100

GSSF

(V = 20 Vdc)

Gate−Body Leakage Current, Reverse

−

−100

GSSR

(V = −ꢀ20 Vdc)

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

−

2.5

−

Vdc

GS(th)

(V = V , I = 250 mAdc)

On−State Drain Current

(V ≥ 2.0 V , V = 10 Vdc)

500

D(on)

DS(on) GS

Static Drain−Source On−State Voltage

(V = 10 Vdc, I = 500 mAdc)

DS(on)

−

3.75

0.375

(V = 5.0 Vdc, I = 50 mAdc)

Static Drain−Source On−State Resistance

(V = 10 V, I = 500 mAdc)

Ohms

DS(on)

T = 25°C

−

7.5

13.5

7.5

= 125°C

(V = 5.0 Vdc, I = 50 mAdc)

T = 25°C

= 125°C

13.5

Forward Transconductance

(V ≥ 2.0 V , I = 200 mAdc)

−

mmhos

DS(on)

DYNAMIC CHARACTERISTICS

Input Capacitance

−

iss

(V = 25 Vdc, V = 0, f = 1.0 MHz)

Output Capacitance

oss

(V = 25 Vdc, V = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(V = 25 Vdc, V = 0, f = 1.0 MHz)

5.0

rss

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

−

d(on)

(V = 25 Vdc, I ^ 500 mAdc,

= 10 V)

gen

= 25 W, R = 50 W, V

Turn−Off Delay Time

d(off)

BODY−DRAIN DIODE RATINGS

Diode Forward On−Voltage

−

−1.5

−115

−800

Vdc

(I = 11.5 mAdc, V = 0 V)

Source Current Continuous

(Body Diode)

mAdc

Source Current Pulsed

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

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−

−ꢀ20

+ꢀ20

+ꢀ60

+ꢀ100

+ꢀ140

−ꢀ60

−ꢀ20

+ꢀ20

+ꢀ60

+ꢀ100

+ꢀ140

2N7002L

TYPICAL ELECTRICAL CHARACTERISTICS

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

1.0

= 10 V

T = 25°C

25°C

−ꢀ55°C

0.8

0.6

0.4

0.2

= 10 V

9 V

125°C

8 V

7 V

6 V

5 V

4 V

3 V

1.0 2.0 3.0 4.0 5.0

6.0

7.0 8.0 9.0 10

1.0 2.0 3.0 4.0

5.0

6.0 7.0 8.0

9.0 10

, DRAIN SOURCE VOLTAGE (VOLTS)

V , GATE SOURCE VOLTAGE (VOLTS)

Figure 1. Ohmic Region

Figure 2. Transfer Characteristics

2.4

1.2

1.05

1.1

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

= V

= 1.0 mA

= 10 V

= 200 mA

1.10

1.0

0.95

0.9

0.85

0.8

0.75

0.7

T, TEMPERATURE (°C)

Figure 3. Temperature versus Static

Drain−Source On−Resistance

Figure 4. Temperature versus Gate

Threshold Voltage

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2N7002L

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AH

NOTES:

ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

ꢁꢂ2. CONTROLLING DIMENSION: INCH.

ꢁꢂ3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

ꢁꢂ4. 318−03 AND −07 OBSOLETE, NEW STANDARD

318−08.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

2.80

1.20

0.89

0.37

1.78

MAX

3.04

1.40

1.11

0.1102 0.1197

0.0472 0.0551

0.0350 0.0440

0.0150 0.0200

0.0701 0.0807

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.0005 0.0040 0.013

0.0034 0.0070 0.085

0.0140 0.0285

0.0350 0.0401

0.0830 0.1039

0.0177 0.0236

0.35

0.89

2.10

0.45

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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2N7002L/D

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