2SB1202STP [ONSEMI]
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN;
| 型号： | 2SB1202STP |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN |
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN2113B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1202/2SD1802
High-Current Switching Applications
Applications
Package Dimensions
unit:mm
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
2045B
[2SB1202/2SD1802]
6.5
Features
2.3
5.0
0.5
4
· Adoption of FBET, MBIT processes.
· Large currrent capacity and wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
0.85
0.7
· Small and slim package making it easy to make
2SB1202/2SD1802-used sets smaller.
1.2
0.6
0.5
1 : Base
1
2
3
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
unit:mm
2044B
[2SB1202/2SD1802]
6.5
2.3
5.0
0.5
4
0.5
0.85
1
2
3
0.6
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
2.3
2.3
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113–1/5
2SB1202/2SD1802
( ) : 2SB1202
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
(–)60
(–)50
(–)6
(–)3
(–)6
1
V
V
CBO
CEO
EBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
˚C
˚C
Collector Dissipation
P
C
Tc=25˚C
15
Junction Temperature
Storage Temperature
Tj
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
(–)1
Collector Cutoff Current
I
V
=(–)40V, I =0
µA
µA
CBO
CB
EB
CE
CE
CE
CB
E
Emitter Cutoff Current
DC Current Gain
I
V
V
V
V
V
=(–)4V, I =0
(–)1
EBO
C
h
1
=(–)2V, I =(–)100mA
100*
35
560*
FE
FE
C
h
2
=(–)2V, I =(–)3A
C
Gain-Bandwidth Product
Output Capacitance
f
=(–)10V, I =(–)50mA
150
MHz
pF
V
T
C
C
=(–)10V, f=1MHz
(39)25
0.19
ob
0.5
Collector-to-Emitter Saturation Voltage
V
V
I
=(–)2A, I =(–)100mA
CE(sat)
C
B
(–0.35) (–0.7)
(–)0.94 (–)1.2
V
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
I
I
I
I
=(–)2A, I =(–)100mA
V
BE(sat)
C
C
C
B
V
V
V
=(–)10µA, I =0
(–)60
(–)50
(–)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(–)1mA, R =∞
V
BE
=(–)10µA, I =0
V
E
C
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
70
(450)
650
ns
ns
ns
ns
on
Storage Time
Fall Time
t
stg
t
f
35
* : The 2SB1202/2SD1802 are classified by 100mA h as follows :
FE
Rank
R
S
T
U
h
100 to 200 140 to 280 200 to 400 280 to 560
FE
Switching Time Test Circuit
I
B1
PW=20µs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
25Ω
50Ω
+
+
100µF
470µF
V
= --5V
V
=25V
CC
BE
I =10I = --10I =1A
B1 B2
C
(For PNP, the polarity is reversed.)
No.2113–2/5
2SB1202/2SD1802
I
-- V
I
-- V
C CE
C
CE
--5
--4
--3
--2
5
2SB1202
2SD1802
4
3
2
5mA
--1
0
--5mA
I =0
1
0
I =0
B
B
0
--0.4
--0.8
--1.2
--1.6
--2.0
0
0.4
0.8
1.2
1.6
2.0
– V
CE
ITR09163
Collector-to-Emitter Voltage, V
– V
Collector-to-Emitter Voltage, V
CE
ITR09162
I
-- V
I
-- V
CE
C
CE
C
--2.0
--1.6
--1.2
--0.8
2.0
1.6
1.2
0.8
2SB1202
2SD1802
2mA
--0.4
0
0.4
0
1mA
I =0
--16
I =0
B
B
0
0
5
--4
--8
--12
--20
0
0
5
4
8
12
16
20
ITR09165
Collector-to-Emitter Voltage, V
CE
– V
Collector-to-Emitter Voltage, V
CE
– V
ITR09164
I
-- V
I
-- V
BE
C
BE
C
--3.6
--3.2
--2.8
--2.4
--2.0
--1.6
--1.2
--0.8
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
2SD1802
2SB1202
= --2V
V
=2V
V
CE
CE
--0.4
0
0.4
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0.2
0.4
0.6
0.8
1.0
1.2
ITR09167
Base-to-Emitter Voltage, V
BE
– V
Base-to-Emitter Voltage, V – V
BE
ITR09166
h
FE
-- I
h
FE
-- I
C
C
1000
1000
2SD1802
2SB1202
V
=2V
V
= --2V
7
5
7
5
CE
CE
Ta=75°C
25°C
3
2
3
2
--25°C
100
100
7
5
7
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
2
3
5
--0.01
--0.1
0.01
Collector Current, I – A --1.0
Collector0C.1urrent, I – A
ITR09168
ITR09169
C
C
No.2113–3/5
2SB1202/2SD1802
f
-- I
f
-- I
C
T
C
T
1000
1000
2SB1202
2SD1802
7
7
V
CE
= --10V
V
CE
=10V
5
5
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
--0.01
10
0.01
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
--0.1
--1.0
0.1
1.0
Collector Current, I – A
Collector Current, I – A
ITR09170
ITR09171
C
C
Cob -- V
Cob -- V
CB
CB
5
5
2SB1202
f=1MHz
2SD1802
f=1MHz
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
--1.0
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--10
--100
ITR09172
1.0
10
100
Collector-to-Base Voltage, V -- V
CB
ITR09173
Collector-to-Base Voltage, V
-- V
CB
V
(sat) -- I
V
(sat) -- I
CE C
CE
C
--1000
1000
2SB1202
2SD1802
/ I =20
7
7
I
C
/ I =20
B
I
C
B
5
5
3
2
3
2
--100
100
7
5
7
5
3
2
3
2
--10
10
5
7
2
3
5
7
2
3
5
7
2
3
5
5
7
2
3
5
7
2
3
5
7
1.0
2
3
5
--0.01
--0.1
0.01
0.1
Collector Current, I – A--1.0
Collector Current, I – A
ITR09174
ITR09175
C
C
V
(sat) -- I
V
(sat) -- I
BE
BE
C
C
--10
10
2SD1802
2SB1202
/ I =20
7
7
I
I / I =20
C
B
C B
5
5
3
2
3
2
--1.0
1.0
7
5
7
5
3
3
5
7
2
3
5
7
2
3
5
7
2
3
5
5
7
2
3
5
7
2
3
5
7
1.0
2
3
5
--0.01
--0.1
0.01
Collector Current, I – A --1.0
Collector0C.1urrent, I – A
ITR09176
ITR09177
C
C
No.2113–4/5
2SB1202/2SD1802
A S O
P
-- Ta
C
10
16
I
=6A
2SB1202 / 2SD1802
2SB1202 / 2SD1802
CP
15
14
5
I =3A
C
100ms
3
2
12
10
8
10ms
1.0
DC operation
5
3
2
T
a=25
°
6
C
0.1
4
5
3
2
2
Tc=25°C, Single pulse
For PNP, minus sign is omitted.
1
0
0.01
3
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
1.0
10
100
ITR09178
Ambient Temperature, Ta – ˚C
Collector-to-Emitter Voltage, V
– V
ITR09179
CE
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2004. Specifications and information herein are subject
to change without notice.
PS No.2113–5/5
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