2SC3149-L [ONSEMI]

1.5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN;
2SC3149-L
型号: 2SC3149-L
厂家: ONSEMI    ONSEMI
描述:

1.5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

文件: 总4页 (文件大小:35K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number:ENN1068C  
NPN Triple Diffused Planar Silicon Transistor  
2SC3149  
800V/1.5A Switching Regulator Applications  
Features  
Package Dimensions  
unit:mm  
· High breakdown voltage (V  
· High-speed switching.  
· Wide ASO.  
900V).  
CBO  
2010C  
[2SC3149]  
10.2  
4.5  
3.6  
5.1  
1.3  
1.2  
0.8  
0.4  
1
2
3
1 : Base  
2 : Collector  
3 : Emitter  
2.55  
2.55  
SANYO : TO-220AB  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
900  
800  
7
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
V
EBO  
I
1.5  
5
A
C
Collector Current (Pulse)  
Base Current  
I
PW300µs, Duty Cycle10%  
Tc=25˚C  
A
CP  
I
0.8  
40  
A
B
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
W
˚C  
˚C  
C
Tj  
150  
Tstg  
55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
10  
Collector Cutoff Current  
I
V
V
V
V
=800V, I =0  
E
=5V, I =0  
C
=5V, I =0.1A  
C
=5V, I =0.5A  
C
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
10  
EBO  
h
1
10*  
40*  
FE  
FE  
h
2
8
Continued on next page.  
* : The h 1 of the 2SC3149 is classified as follows. When specifying the h 1 rank, specify two ranks or more in principle.  
FE  
FE  
Rank  
K
L
M
h
10 to 20  
15 to 30  
20 to 40  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
51304TN (PC)/N1098HA (KT)/5137KI/2125MW, TS No.1068–1/4  
2SC3149  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Gain-Bandwidth Product  
f
V
V
I
=10V, I =0.1A  
15  
MHz  
pF  
V
T
CE  
C
Output Capacitance  
C
=10V, f=1MHz  
CB  
=0.75A, I =0.15A  
B
=0.75A, I =0.15A  
B
=1mA, I =0  
E
30  
ob  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Collector-to-Emitter Sustain Voltage  
V
2.0  
CE(sat)  
BE(sat)  
C
V
I
I
I
1.5  
V
C
C
C
V
V
V
V
900  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
=5mA, R =  
800  
7
V
BE  
I =1mA, I =0  
V
E
C
C
C
C
I
I
I
=1.5A, L=1mH, I =0.5A  
B
800  
800  
V
CEO(sus)  
CEX(sus)1  
V
=0.5A, I =0.1A, I =0.1A, L=5mH, clamped  
V
B1  
B2  
Collector-to-Emitter Sustain Voltage  
=0.25A, I =0.05A, I =0.05A, L=10mH,  
B1 B2  
V
900  
V
CEX(sus)2  
clamped  
Turn-ON Time  
Storage Time  
Fall Time  
t
I
I
I
=1A, I =0.2A, I =0.4A, R =400, V =400V  
B1 B2 CC  
1.0  
3.0  
0.7  
µs  
µs  
µs  
on  
C
C
C
L
t
=1A, I =0.2A, I =0.4A, R =400, V =400V  
B1 B2 CC  
stg  
L
t
f
=1A, I =0.2A, I =0.4A, R =400, V =400V  
B1 B2 CC  
L
Switching Time Test Circuit  
PW=20µs  
D.C.1%  
I
B1  
OUTPUT  
R
B
INPUT  
I
B2  
R
400Ω  
L
V
R
50Ω  
+
+
100µF  
470µF  
--5V  
400V  
I
-- V  
I
-- V  
CE  
C
CE  
C
1.0  
0.8  
0.6  
0.4  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
Pulse  
From top  
50mA  
45mA  
40mA  
35mA  
30mA  
25mA  
20mA  
0.2  
0
0.2  
0
5mA  
I =0  
B
I =0  
B
Pulse  
10  
V  
CE  
ITR05389  
0
2
4
6
8
10  
ITR05388  
0
2
4
6
8
Collector-to-Emitter Voltage, V  
CE  
V  
Collector-to-Emitter Voltage, V  
I
-- V  
h -- I  
FE C  
C
BE  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
100  
V
=5V  
V
=5V  
CE  
Pulse  
CE  
Pulse  
7
5
3
2
10  
7
5
3
2
0.2  
0
1.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
V  
1.2  
ITR05390  
5
7
2
3
5
7
2
3
5
7
2
3
0.01  
1.0  
Collector C0u.r1rent, I A  
Base-to-Emitter Voltage, V  
BE  
ITR05391  
C
No.1068–2/4  
2SC3149  
V
(sat) -- I  
CE  
V
(sat) -- I  
BE  
C
C
10  
100  
I
/ I =5  
I / I =5  
C B  
Pulse  
C
B
5
7
Pulse  
3
2
5
10  
3
2
5
3
2
1.0  
1.0  
7
5
5
3
2
3
2
0.1  
5
5
3
0
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0.01  
0.1  
1.0  
0.01  
0.1  
1.0  
Collector Current, I A  
Collector Current, I A  
ITR05392  
ITR05393  
C
C
SW Time -- I  
Forward Bias A S O  
C
10  
10  
R load  
I =5I =--2.5I  
I
=5A  
CP  
7
5
5
C
B1  
=400V  
B2  
3
2
V
CC  
I =1.5A  
C
3
2
1.0  
5
3
2
1.0  
7
5
0.1  
5
3
2
3
2
0.01  
0.1  
7
5
5
3
Single pulse  
5
7
2
3
5
7
2
3
5
7
1000  
3
5
7
3
5
7
2
3
2
2
10  
100  
0.1  
1.0  
Collector Current, I A  
Collector-to-Emitter Voltage, V  
V  
ITR05395  
ITR05394  
C
CE  
Reverse Bias A S O  
P
-- Ta  
C
10  
50  
40  
30  
20  
7
5
3
2
1.0  
7
5
3
2
10  
0
I =5I =--5I  
B1  
0.1  
C
B2  
--I =0.3A(I >1.5A)  
C
B2  
7
5
Single pulse  
2
3
5
7
2
3
5
7
2
20  
40  
60  
80  
100  
120  
140 150 160  
100  
1000  
Ambient Temperature, Ta – ˚C  
ITR05396  
Collector-to-Emitter Voltage, V  
CE  
V  
ITR05397  
No.10683/4  
2SC3149  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of May, 2004. Specifications and information herein are subject to  
change without notice.  
PS No.10684/4  

相关型号:

2SC3149-M

Power Bipolar Transistor, 1.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN
ONSEMI
UTC

2SC3149-T60-K

NPN TEANSISTOR
UTC

2SC3149-T60-K-K

Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
UTC

2SC3149-T60-K-M

Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
UTC
UTC
UTC

2SC3149G-T60-K

NPN TRANSISTOR
UTC

2SC3149G-T60-K-K

Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, HALOGEN FREE PACKAGE-3
UTC

2SC3149G-T60-K-L

暂无描述
UTC

2SC3149G-T60-K-M

Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, HALOGEN FREE PACKAGE-3
UTC

2SC3149K

TRANSISTOR,BJT,NPN,800V V(BR)CEO,1.5A I(C),TO-220AB
ONSEMI