2SC3149G-T60-K [UTC]

NPN TRANSISTOR; NPN晶体管


型号：	2SC3149G-T60-K
厂家：	Unisonic Technologies
描述：	NPN TRANSISTOR NPN晶体管晶体晶体管功率双极晶体管放大器局域网
文件：	总2页 (文件大小：139K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC3149

Preliminary

NPN SILICON TRANSISTOR

NPN TRANSISTOR

DESCRIPTION

The UTC 2SC3149 are series of NPN silicon planar transistor,

and its suited to be used in power amplifier applications.

FEATURES

* Suit for power amplifier applications

ORDERING INFORMATION

Ordering Number

Lead Free

Pin Assignment

Package

TO-126

Packing

Bulk

Halogen Free

2SC3149G-T60-K

2SC3149L-T60-K

(1)Packing Type

(1) K: Bulk

(2) T60: TO-126

(3) G: Halogen Free, L: Lead Free

(2)Package Type

(3)Lead Free

www.unisonic.com.tw

1 of 2

QW-R204-024.b

2SC3149

Preliminary

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-emitter voltage

Emitter-Base Voltage

Collector Current

1200

800

0.5

Collector Dissipation

Junction Temperature

Storage Temperature

P_C

T_J

+150

℃

T_STG

-55 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_a=25℃, unless otherwise specified)

PARAMETER

SYMBOL

BV_CBO

BV_CEO

BV_EBO

I_CBO

TEST CONDITIONS

I_C=1mA, I_E=0A

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

1200

I_C=5mA, I_B=0A

I_E=1mA, I_C=0A

800

μA

Collector Cutoff Current

Emitter Cutoff Current

_CB=800V, I_E=0A

_EB=5V, I_C=0A

I_EBO

DC Current Gain (Note)

h_FE

I_C=100mA, V_CE=5V

I_C=200mA, I_B=40mA

I_C=100mA, V_CE=10V

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

V_BE(SAT)

0.8

1.5

Current Gain Bandwidth Product

Output Capacitance

Turn-On Time

f_T

MHz

μs

C_OB

t_ON

t_STG

V_CB=10V, f=1MHz

1.0

3.0

0.7

I_C=1A, I_B1=0.2A, I_B2=-0.4A,

R_L=400Ω, V_CC=400V

Storage Time

μs

Fall Time

t_F

μs

Note: Pulse test: Pulse width=300μs, Duty Cycle≦2%

CLASSIFICATION OF h_FE

RANK

RANGE

10 ~ 20

15 ~ 30

20 ~ 40

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

2 of 2

QW-R204-024.b

www.unisonic.com.tw

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