2SC4027T(TP-FA) [ONSEMI]
TRANSISTOR,BJT,NPN,160V V(BR)CEO,1.5A I(C),TO-252VAR;型号: | 2SC4027T(TP-FA) |
厂家: | ONSEMI |
描述: | TRANSISTOR,BJT,NPN,160V V(BR)CEO,1.5A I(C),TO-252VAR |
文件: | 总5页 (文件大小:138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN2262D
SANYO Sem iconductors
DATA S HEET
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Applications
2SA1552 / 2SC4027
Applications
•
Converters, inverters, color TV audio output.
Features
• Adoption of FBET, MBIT processes.
•
High voltage and large current capacity.
• Ultrahigh-speed switching.
• Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact.
Specifications ( ) : 2SA1552
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
(--)180
(--)160
(--)6
V
V
I
(--)1.5
(--)2.5
1
A
C
Collector Current (Pulse)
I
A
CP
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
15
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
www.semiconductor-sanyo.com/network
91708 TI IM TC-00001624 / D0505CB MS IM X-0448 / 53002RM (KT) / 72098HA (KT) / 8109MO / 5137TA, TS No.2262-1/5
2SA1552 / 2SC4027
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
(--)1.0
I
V
V
V
V
V
V
=(--)120V, I =0A
μA
μA
CBO
CB
EB
CE
CE
CE
CB
E
Emitter Cutoff Current
I
=(--)4V, I =0A
(--)1.0
400*
EBO
C
h
1
2
=(--)5V, I =(--)100mA
100*
FE
FE
C
DC Current Gain
h
=(--)5V, I =(--)10mA
80
C
Gain-Bandwidth Product
Output Capacitance
f
=(--)10V, I =(--)50mA
C
120
(22)12
(--0.2)0.13 (--0.5)0.45
MHz
pF
V
T
Cob
=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
V
(sat)
I
C
I
C
I
C
I
C
=(--)500mA, I =(--)50mA
B
CE
(sat)
=(--)500mA, I =(--)50mA
(--)0.85
(--)1.2
V
BE
B
V
V
V
=(--)10μA, I =0A
(--)180
(--)160
(--)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(--)1mA, R =∞
BE
V
I =(--)10μA, I =0A
V
E
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
60
(0.7)1.2
(50)80
ns
μs
ns
on
Storage Time
t
stg
Fall Time
t
f
* ; The 2SA1552 / 2SC4027 are classified by 100mA h as follws:
FE
Rank
R
S
T
h
FE
100 to 200
140 to 280
200 to 400
Package Dimensions
unit : mm (typ)
Package Dimensions
unit : mm (typ)
7518-003
7003-003
2.3
6.5
5.0
6.5
5.0
4
2.3
0.5
0.5
4
0.5
0.85
0.7
0.85
1.2
1
2
3
0.6
0 to 0.2
1.2
0.6
0.5
1 : Base
2 : Collector
3 : Emitter
1 : Base
2 : Collector
3 : Emitter
1
2
3
4 : Collector
4 : Collector
2.3 2.3
2.3 2.3
SANYO : TP-FA
SANYO : TP
Switching Time Test Circuit
I
B1
OUTPUT
R
B
INPUT
PW=20μs
D.C.≤1%
I
R
14kΩ
B2
L
V
R
50Ω
+
+
100μF
--5V
470μF
100V
10I = --10I =I =0.7A
B1 B2
C
For PNP, the polarity is reversed.
No.2262-2/5
2SA1552 / 2SC4027
I
C
-- V
I
C
-- V
CE
CE
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
1.8
2SA1552
2SC4027
1.6
1.4
1.2
1.0
0.8
0.6
0.4
--2mA
1mA
--1mA
0.2
0
--0.2
0
I =0mA
B
I =0mA
B
0
0
0
5
--1
--2
--3
--4
--5
0
1
2
3
4
5
Collector-to-Emitter Voltage, V
CE
-- V ITR03969
Collector-to-Emitter Voltage, V -- V ITR03970
CE
I
C
-- V
I
-- V
CE
C CE
--1.0
--0.8
--0.6
--0.4
1.0
0.8
0.6
0.4
2SA1552
2SC4027
--0.2
0
0.2
0
--0.5mA
I =0mA
0.5mA
I =0mA
B
40
B
--10
--20
--30
--40
--50
0
10
20
30
50
Collector-to-Emitter Voltage, V
CE
-- V ITR03971
Collector-to-Emitter Voltage, V -- V ITR03972
CE
I
C
-- V
I
-- V
BE
C
BE
--1.6
--1.2
--0.8
--0.4
1.6
1.2
0.8
0.4
2SA1552
= --5V
2SC4027
V
V
=5V
CE
CE
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR03974
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, V
BE
-- V
Base-to-Emitter Voltage, V -- V
BE
ITR03973
h
-- I
h
-- I
FE
C
FE
C
1000
1000
2SA1552
= --5V
2SC4027
7
5
7
5
V
V
=5V
CE
CE
3
2
3
2
°C
Ta=75
100
100
7
5
7
5
3
2
3
2
10
10
7
2
3
5
7
2
3
5
7
2
3
7
2
3
5
7
2
3
5
7
1.0
2
3
--0.01
--0.1
--1.0
0.01
0.1
Collector Current, I -- A
ITR03975
Collector Current, I -- A
ITR03976
C
C
No.2262-3/5
2SA1552 / 2SC4027
f
-- I
Cob -- V
CB
T
C
100
5
2SA1552 / 2SC4027
=10V
2SA1552 / 2SC4027
7
5
V
f=1MHz
3
2
CE
3
2
100
7
5
10
3
2
7
5
For PNP minus sign is omitted.
For PNP minus sign is omitted.
3
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
0.01
0.1
1.0
ITR03977
Collector Current, I -- A
Collector-to-Base Voltage, V
CB
-- V ITR03978
C
V
(sat) -- I
V
(sat) -- I
CE C
CE
C
3
3
2
2SA1552
2SC4027
2
I
C
/ I =10
B
I
C
/ I =10
B
--1000
1000
7
5
7
5
3
2
3
2
--100
100
7
5
7
5
Ta=75°C
3
2
3
2
7
2
3
5
7
2
3
5
7
--1.0
2
3
7
7
0
2
3
5
7
2
3
5
7
1.0
2
3
--0.01
--0.1
0.01
0.1
Collector Current, I -- A
ITR03979
Collector Current, I -- A
C
V
ITR03980
C
V
(sat) -- I
(sat) -- I
BE
C
BE C
--10
10
2SA1552
/ I =10
B
2SC4027
7
5
7
5
I
I
/ I =10
C
C B
3
2
3
2
--1.0
1.0
7
5
7
5
3
3
7
2
3
5
7
2
3
5
7
--1.0
2
3
2
3
5
7
2
3
5
7
2
3
--0.01
--0.1
0.01
0.1
1.0
ITR03981
ITR03982
Collector Current, I -- A
C
Collector Current, I -- A
A S O
P
-- TaC
C
5
1.2
1.0
0.8
0.6
0.4
2SA1552 / 2SC4027
2SA1552 / 2SC4027
I
CP
=2.5A
3
2
I =1.5A
C
1.0
5
3
2
0.1
5
3
2
0.2
0
Tc=25°C
0.01 Single Pulse
For PNP minus sign is omitted.
5
20
40
60
80
100
120
140
160
5
7
2
3
5
7
2
3
5
7
2
-- V ITR03983
1.0
10
100
Collector-to-Emitter Voltage, V
CE
Ambient Temperature, Ta -- °C
IT10480
No.2262-4/5
2SA1552 / 2SC4027
P
-- Tc
C
16
15
14
2SA1552 / 2SC4027
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
IT10479
Case Temperature, Tc -- °C
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2008. Specifications and information herein are subject
to change without notice.
PS No.2262-5/5
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