2SC4615E(TP) [ONSEMI]

TRANSISTOR,BJT,NPN,400V V(BR)CEO,1A I(C),TO-251VAR;
2SC4615E(TP)
型号: 2SC4615E(TP)
厂家: ONSEMI    ONSEMI
描述:

TRANSISTOR,BJT,NPN,400V V(BR)CEO,1A I(C),TO-251VAR

文件: 总5页 (文件大小:49K)
中文:  中文翻译
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Ordering number:ENN3398A  
2SA1772 : PNP Epitaxial Planar Silicon Transistor  
2SC4615 : NPN Triple Diffused Planar Silicon Transistor  
2SA1772/2SC4615  
High-Voltage Driver Applications  
Features  
Package Dimensions  
unit:mm  
· Large current capacity (I =1A).  
C
· High breakdown votlage (V  
400V).  
CEO  
2045B  
[2SA1772/2SC4615]  
6.5  
2.3  
5.0  
0.5  
4
0.85  
0.7  
1.2  
0.6  
0.5  
1
2
3
1 : Base  
2 : Collector  
3 : Emitter  
4 : Collector  
SANYO : TP  
2.3  
2.3  
unit:mm  
2044B  
[2SA1772/2SC4615]  
6.5  
2.3  
5.0  
0.5  
4
0.5  
0.85  
1
2
3
0.6  
1.2  
0 to 0.2  
1 : Base  
2 : Collector  
3 : Emitter  
2.3  
2.3  
4 : Collector  
SANYO : TP-FA  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
90503TN(KT)/83198HA (KT)/12894TH AX-8287/5300TA (KOTO) X-6468, 6469 No.3398–1/5  
2SA1772/2SC4615  
( ) : 2SA1772  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
()400  
()400  
()5  
()1  
()2  
1
CBO  
CEO  
EBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
I
A
C
Colletor Current (Pulse)  
I
A
CP  
W
W
˚C  
˚C  
Collector Dissipation  
P
C
Tc=25˚C  
15  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
typ  
max  
Collector Cutoff Current  
I
V
=()300V, I =0  
()1.0  
()1.0  
200*  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CB  
E
Emitter Cutoff Current  
I
V
V
V
V
I
=()4V, I =0  
EBO  
C
DC Current Gain  
h
=()10V, I =()100mA  
40*  
FE  
C
Gain-Bandwidth Product  
f
=()10V, I =()50mA  
(50)70  
(12)8  
MHz  
pF  
V
T
C
Output Capacitance  
C
=()30V, f=1MHz  
ob  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
V
V
=()200mA, I =()20mA  
()1.0  
()1.0  
CE(sat)  
BE(sat)  
C
B
I
I
I
=()200mA, I =()20mA  
V
C
C
C
B
V
V
V
=()10µA, I =0  
()400  
()400  
()5  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
E
=()1mA, R =  
V
BE  
I =()10µA, I =0  
V
E
C
(0.25)  
0.11  
(3.0)  
4.0  
µs  
µs  
µs  
µs  
µs  
µs  
Turn-ON Time  
Storage Time  
Fall Time  
t
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
on  
t
stg  
(0.3)  
0.65  
t
f
* : The 2SA1772/2SC4615 are classified by 100mA h as follows :  
FE  
Rank  
C
D
E
h
40 to 80  
60 to 120  
100 to 200  
FE  
Switching Time Test Circuit  
I
B1  
PW=20µs  
D.C.1%  
INPUT  
I
B2  
OUTPUT  
R
B
V
R
R
L
50Ω  
+
+
100µF  
=--5V  
470µF  
V
V
=150V  
CE  
BE  
10I = --10I = I =200mA  
B1 B2  
C
R =750, R =50, at I =200mA  
L
B
C
(For PNP, the polarity is reversed.)  
No.3398–2/5  
2SA1772/2SC4615  
I
-- V  
BE  
I
-- V  
C BE  
C
--1.0  
--0.8  
1.0  
2SA1772  
=--10V  
2SC4615  
V =10V  
CE  
V
CE  
0.8  
0.6  
0.4  
--0.6  
--0.4  
--0.2  
0
0.2  
0
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
--1.4  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Base-to-Emitter Voltage, V  
– V ITR04587  
Base-to-Emitter Voltage, V  
– V ITR04588  
BE  
BE  
h
FE  
-- I  
h
FE  
-- I  
C
C
3
2
3
2
2SA1772  
2SC4615  
V
CE  
=--10V  
V
CE  
=10V  
Ta=75°C  
100  
7
100  
7
5
5
3
2
3
2
10  
7
10  
7
5
5
3
3
3
5
7
2
3
5
7
2
3
5
7
2
3
3
5
7
2
3
5
7
2
3
5
7
1000  
2
3
--10  
--100  
--1000  
ITR04589  
10  
100  
Collector Current, I – mA  
ITR04590  
Collector Current, I – mA  
C
C
f
-- I  
f
-- I  
C
T
C
T
3
2
3
2
2SA1772  
=--10V  
2SC4615  
V
V
CE  
=10V  
CE  
100  
7
100  
7
5
5
3
2
3
2
10  
10  
7
5
7
5
3
5
7
2
3
5
7
2
3
5
3
5
7
2
3
5
7
2
3
5
--10  
--100  
10  
100  
Collector Current, I – mA  
ITR04591  
Collector Current, I – mA  
ITR04592  
C
C
Cob -- V  
Cob -- V  
CB  
CB  
3
2
100  
7
2SA1772  
f=1MHz  
2SC4615  
f=1MHz  
5
100  
7
5
3
2
3
2
10  
7
10  
7
5
5
3
3
7
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
--1.0  
--10  
--100  
1.0  
10  
100  
Collector-to-Base Voltage,V – V  
CB  
Collector-to-Base Voltage,V – V  
CB  
ITR04593  
ITR04594  
No.3398–3/5  
2SA1772/2SC4615  
SW Time -- I  
SW Time -- I  
C
C
10  
10  
7
2SA1772  
2SC4615  
V =150V  
CC  
7
V
CC  
=--150V  
5
5
10I =--10I =I  
10I =--10I =I  
B1 B2 C  
B1  
B2  
C
3
2
3
2
1.0  
7
5
1.0  
7
5
3
2
3
2
0.1  
7
5
0.1  
7
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
10  
10  
3
5
7
2
3
5
7
2
3
--10  
--100  
--1000  
10  
100  
1000  
ITR04596  
Collector Current, I – mA  
Collector Current, I – mA  
ITR04595  
C
C
V
(sat) -- I  
V
(sat) -- I  
CE C  
CE  
C
3
2
3
2
2SA1772  
/ I =10  
2SC4615  
/ I =10  
I
C
I
C
B
B
--1.0  
1.0  
7
5
7
5
3
2
3
2
--0.1  
0.1  
7
5
7
5
3
5
7
2
3
5
7
2
3
5
7
3
5
7
2
3
5
7
2
3
5
7
--10  
--100  
--1000  
ITR04597  
100  
1000  
ITR04598  
Collector Current, I – mA  
Collector Current, I – mA  
C
C
V
(sat) -- I  
V
(sat) -- I  
C
BE  
C
BE  
3
3
2
2SA1772  
I
2SC4615  
I / I =10  
C
2
/ I =10  
C
B
B
25°C  
--1.0  
1.0  
7
5
7
5
25°C  
3
2
3
2
--0.1  
0.1  
7
5
7
5
3
5
7
2
3
5
7
2
3
5
7
2
3
3
5
7
2
3
5
7
2
3
5
7
1000  
--10  
--100  
--1000  
100  
Collector Current, I – mA  
Collector Current, I – mA  
ITR04599  
ITR04600  
C
C
A S O  
A S O  
10000  
7
5
2SA1772  
7
5
2SC4615  
3
2
3
2
I
=–2000mA  
I
=2000mA  
CP  
CP  
I =–1000mA  
I =1000mA  
C
C
--1000  
1000  
7
5
7
5
3
2
3
2
--100  
100  
7
5
7
5
3
2
3
2
--10  
7
5
10  
7
5
Tc=25°C  
Single pulse  
Tc=25°C  
Single pulse  
3
2
3
2
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
--0.1  
--1.0  
--10  
--100  
--1000  
ITR04601  
0.1  
1.0  
10  
100  
1000  
ITR04602  
Collector-to-Emitter Voltage, V  
– V  
Collector-to-Emitter Voltage, V  
– V  
CE  
CE  
No.3398–4/5  
2SA1772/2SC4615  
P
-- Ta  
P
-- Ta  
C
C
1.2  
1.0  
0.8  
0.6  
0.4  
18  
2SA1772 / 2SC4615  
2SA1772 / 2SC4615  
16  
15  
14  
12  
10  
8
6
4
0.2  
0
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta – ˚C  
Ambient Temperature, Ta – ˚C  
ITR04603  
ITR04604  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of September, 2003. Specifications and information herein are  
subject to change without notice.  
PS No.3398–5/5  

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