2SC5226A-4-TL-E [ONSEMI]

射频晶体管,NPN 单 MCP,10 V,70 mA,fT = 7 GHz;
2SC5226A-4-TL-E
型号: 2SC5226A-4-TL-E
厂家: ONSEMI    ONSEMI
描述:

射频晶体管,NPN 单 MCP,10 V,70 mA,fT = 7 GHz

射频 光电二极管 晶体管
文件: 总9页 (文件大小:159K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
RF Transistor  
3
10 V, 70 mA, fT = 7 GHz, NPN Single MCP  
2SC5226A  
1
2
SC70 / MCP3  
CASE 419AJ  
Features  
Lownoise: NF = 1.0 dB Typ (f = 1 GHz)  
2
High Gain: S21e= 12 dB Typ (f = 1 GHz)  
MARKING DIAGRAM  
High Cutoff Frequency: f = 7 GHz Typ  
T
This is a PbFree Device  
LOT No.  
R
A
N
LN  
K
Specifications  
LOT No.  
ABSOLUTE MAXIMUM RATINGS (T = 25°C)  
A
Symbol  
Parameter  
CollectortoBase Voltage  
CollectortoEmitter Voltage  
EmittertoBase Voltage  
Collector Current  
Value  
Unit  
V
LN  
= Specific Device Code  
V
CBO  
V
CEO  
V
EBO  
20  
10  
V
ELECTRICAL CONNECTION  
2
70  
V
3
I
C
mA  
mW  
°C  
°C  
P
C
Collector Dissipation  
150  
1
Tj  
Tstg  
Junction Temperature  
Storage Temperature  
150  
1: Base  
2: Emitter  
55 to +150  
2
3: Collector  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
2SC5226A4TLE  
MCP3  
(PbFree)  
3,000 / Tape &  
Reel  
2SC5226A5TLE  
MCP3  
(PbFree)  
3,000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
November, 2022 Rev. 2  
2SC5226A/D  
2SC5226A  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
Test Condition  
= 10 V, I = 0 A  
Min  
Typ  
Max  
1.0  
10  
270*  
Unit  
mA  
I
V
V
V
V
V
CBO  
CB  
EB  
CE  
CE  
CB  
E
I
= 1 V, I = 0 A  
mA  
EBO  
C
hFE  
= 5 V, I = 20 mA  
60*  
5
C
GainBandwidth Product  
Output Capacitance  
f
T
= 5 V, I = 20 mA  
7
GHz  
pF  
C
Cob  
Cre  
= 10 V, f = 1 MHz  
0.75  
0.5  
12  
8
1.2  
Reverse Transfer Capacitance  
Forward Transfer Gain  
pF  
2
S21e1  
V
CE  
V
CE  
V
CE  
= 5 V, I = 20 mA, f = 1 GHz  
9
dB  
dB  
dB  
C
2
S21e2  
= 2 V, I = 3 mA, f = 1 GHz  
C
Noise Figure  
NF  
= 5 V, I = 7 mA, f = 1 GHz  
1.0  
1.8  
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
* The 2SC5226A is classified by 20 mA hFE as follows:  
Rank  
3
4
5
h
FE  
60 to 120  
90 to 180  
135 to 270  
www.onsemi.com  
2
2SC5226A  
3
2
2
V
CE  
= 5 V  
V
CE  
= 5 V  
10  
100  
7
5
7
5
3
2
3
2
1.0  
7
10  
7
5
5
3
5
7
2
3
5 7  
2
3
5 7  
100  
2
7
2
3
5
7
2
3
5
7
100  
2
1.0  
10  
1.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 1. hFE IC  
Figure 2. fT IC  
3
2
3
f = 1 MHz  
f = 1 MHz  
2
1.0  
7
1.0  
7
5
5
3
2
3
2
0.1  
0.1  
7
5
7
5
7
2
3
5
7
2
3
5
7
2
3
7
2
3
5 7  
2
3
5 7  
10  
2
3
0.1  
1.0  
10  
0.1  
1.0  
V
CB  
, COLLECTORTOBASE VOLTAGE (V)  
Figure 4. Cre VCB  
V
CB  
, COLLECTORTOBASE VOLTAGE (V)  
Figure 3. Cob VCB  
12  
10  
14  
12  
10  
f = 1 GHz  
V
= 5 V  
CE  
f = 1 GHz  
8
V
CE  
= 5 V  
V
CE  
= 2 V  
8
6
4
6
4
2
0
2
0
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
2
3
5 7  
2
3
5 7  
100  
2
1.0  
10  
100  
1.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 5. NF IC  
Figure 6. XS21eX2 IC  
www.onsemi.com  
3
2SC5226A  
160  
150  
140  
120  
100  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120 140  
160  
Ta, AMBIENT TEMPERATURE (°C)  
Figure 7. PC Ta  
www.onsemi.com  
4
2SC5226A  
90°  
= 5V  
0.1GHz  
j50  
60°  
120°  
V
I
_
CE  
j25  
j100  
= 20mA  
C
V
= 5V  
= 7mA  
CE  
I
C
j150  
j200  
j250  
30°  
150°  
V
= 2V  
= 3mA  
CE  
0.1GHz  
j10  
I
C
2.0GHz  
0.1GHz  
2.0GHz  
10  
2.0GHz  
2.0GHz  
2.0GHz  
2.0GHz  
12  
20  
100  
4
8
16  
25  
50  
150  
250  
0
0
180°  
V
= 5V  
CE  
V
= 2V  
= 3mA  
I
= 20mA  
CE  
V
= 5V  
= 7mA  
0.1GHz  
C
CE  
I
C
I
C
0.1GHz  
j250  
j200  
j10  
30°  
150°  
j150  
0.1GHz  
j100  
j25  
60°  
120°  
j50  
90°  
f = 100 MHz, 200 MHz to 2000 MHz (200 MHz Step)  
f = 100 MHz, 200 MHz to 2000 MHz (200 MHz Step)  
Figure 8.  
Figure 9.  
90°  
j50  
2.0GHz  
120°  
60°  
_
j25  
2.0GHz  
j100  
= 5V  
V
CE  
I
= 20mA  
C
2.0GHz  
j150  
150°  
30°  
V
= 2V  
= 3mA  
j200  
j250  
CE  
j10  
I
C
V
= 5V  
= 7mA  
CE  
0.1GHz  
0.1GHz  
I
C
250  
0.04  
0.2  
10  
25  
100  
V
0.08 0.12 0.16  
50  
150  
= 5V  
= 20mA  
0
180°  
0.1GHz  
0
CE  
2.0GHz  
= 5V  
V
I
CE  
C
= 7mA  
I
C
2.0GHz  
2.0GHz  
j250  
j200  
j10  
V
I
= 2V  
CE  
30°  
150°  
j150  
= 3mA  
C
j100  
j25  
60°  
120°  
j50  
90°  
f = 100 MHz, 200 MHz to 2000 MHz (200 MHz Step)  
f = 100 MHz, 200 MHz to 2000 MHz (200 MHz Step)  
Figure 10.  
Figure 11.  
www.onsemi.com  
5
2SC5226A  
S Parameters (Common Emitter)  
V
V
V
= 5 V, I = 7 mA, Z = 50 W  
C
CE  
O
SS11Y  
0.720  
0.612  
0.497  
0.456  
0.440  
0.436  
0.434  
0.433  
0.433  
0.434  
0.439  
-S11  
46.0  
SS21Y  
17.973  
13.927  
8.656  
6.080  
4.725  
3.864  
3.258  
2.847  
2.329  
2.252  
2.057  
-S21  
148.5  
127.3  
105.0  
92.8  
84.3  
77.0  
70.3  
64.5  
57.4  
54.2  
49.2  
SS12Y  
0.030  
0.047  
0.066  
0.079  
0.094  
0.110  
0.126  
0.143  
0.160  
0.178  
0.197  
-S12  
68.5  
57.1  
51.3  
52.9  
55.4  
56.8  
57.9  
58.4  
58.9  
58.6  
58.1  
SS22Y  
0.880  
0.697  
0.479  
0.382  
0.339  
0.323  
0.312  
0.304  
0.296  
0.293  
0.294  
-S22  
23.6  
37.6  
47.6  
50.5  
51.8  
53.4  
55.8  
58.3  
62.0  
65.0  
68.1  
Freq(MHz)  
100  
200  
80.9  
400  
121.3  
143.5  
157.6  
167.5  
176.1  
176.6  
170.9  
165.0  
159.6  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
= 5 V, I = 20 mA, Z = 50 W  
CE  
C
O
SS11Y  
-S11  
78.8  
SS21Y  
29.795  
19.008  
10.416  
7.084  
5.407  
4.401  
3.701  
3.217  
2.839  
2.534  
2.319  
-S21  
132.9  
112.2  
95.4  
86.6  
80.1  
74.1  
68.5  
63.6  
58.8  
54.3  
50.1  
SS12Y  
0.022  
0.033  
0.052  
0.071  
0.092  
0.114  
0.134  
0.156  
0.176  
0.197  
0.219  
-S12  
63.9  
60.8  
64.7  
67.2  
68.4  
67.8  
66.8  
65.6  
64.0  
62.4  
60.6  
SS22Y  
0.707  
0.470  
0.296  
0.236  
0.213  
0.208  
0.204  
0.202  
0.199  
0.197  
0.197  
-S22  
38.2  
51.1  
55.3  
56.1  
56.6  
57.9  
60.7  
63.5  
67.9  
71.2  
74.2  
Freq(MHz)  
100  
0.481  
0.420  
0.391  
0.386  
0.381  
0.382  
0.385  
0.388  
0.390  
0.391  
0.394  
200  
119.2  
151.6  
166.4  
175.9  
178.2  
172.1  
166.7  
162.1  
156.7  
152.1  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
= 2 V, I = 3 mA, Z = 50 W  
CE  
C
O
SS11Y  
0.858  
0.782  
0.653  
0.588  
0.557  
0.543  
0.536  
0.533  
0.527  
0.525  
0.528  
-S11  
32.4  
SS21Y  
9.413  
8.187  
5.855  
4.337  
3.444  
2.871  
2.446  
2.145  
1.904  
1.714  
1.564  
-S21  
157.2  
138.5  
113.8  
98.4  
87.7  
78.5  
70.5  
63.5  
57.1  
51.7  
45.9  
SS12Y  
0.040  
0.070  
0.101  
0.114  
0.122  
0.130  
0.137  
0.146  
0.155  
0.168  
0.183  
-S12  
72.6  
59.2  
44.5  
39.1  
38.0  
38.6  
40.3  
42.5  
45.0  
47.3  
49.2  
SS22Y  
0.945  
0.833  
0.637  
0.515  
0.454  
0.426  
0.407  
0.393  
0.382  
0.379  
0.378  
-S22  
16.5  
29.3  
43.2  
50.0  
53.8  
57.1  
60.3  
63.8  
68.0  
72.0  
75.8  
Freq(MHz)  
100  
200  
60.7  
400  
101.1  
126.5  
143.7  
156.3  
166.8  
175.5  
177.0  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
170.3  
163.8  
www.onsemi.com  
6
2SC5226A  
Land Pattern Example  
0.7  
Unit: mm  
0.65 0.65  
Figure 12. Land Pattern Example  
www.onsemi.com  
7
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SC70 / MCP3  
CASE 419AJ  
ISSUE O  
DATE 30 NOV 2011  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON65442E  
SC70 / MCP3  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

相关型号:

2SC5226A-5

TRANSISTOR,BJT,NPN,10V V(BR)CEO,70MA I(C),SOT-323
ONSEMI

2SC5226A-5-TL-E

VHF to UHF Wide-Band Low-Noise Amplifi er Applications
SANYO

2SC5226A-5-TL-E

射频晶体管,NPN 单 MCP,10 V,70 mA,fT = 7 GHz
ONSEMI

2SC5226A-D

VHF to UHF Wide-Band Low-Noise Amplifi er Applications
SANYO

2SC5226ALN4

TRANSISTOR,BJT,NPN,10V V(BR)CEO,70MA I(C),SOT-323
ONSEMI

2SC5226ALN5

Transistor,
ONSEMI

2SC5226A_12

VHF to UHF Wide-Band Low-Noise Amplifi er Applications
SANYO

2SC5227

VHF to UHF Wide-Band Low-Noise Amp Applications
SANYO

2SC5227-3

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 70MA I(C) | TO-236AB
ETC

2SC5227-4

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 70MA I(C) | TO-236AB
ETC

2SC5227-5

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 70MA I(C) | TO-236AB
ETC

2SC5227A

VHF to UHF Wide-Band Low-Noise Amplifier Applications
SANYO