2SC5226ALN5 [ONSEMI]

Transistor,;


型号：	2SC5226ALN5
厂家：	ONSEMI
描述：	Transistor,
文件：	总6页 (文件大小：75K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number : ENA1062

2SC5226A

SANYO Sem iconductors

DATA S HEET

NPN Epitaxial Planar Silicon Transistor

VHF to UHF Wide-Band Low-Noise

Amplifier Applications

2SC5226A

Features

•

Low-noise

High gain

High cut-off frequency : f =7GHz typ.

: NF=1.0dB typ (f=1GHz).

: ⏐S21e⏐²=12dB typ (f=1GHz).

•

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

°C

Collector Dissipation

150

Junction Temperature

Storage Temperature

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Collector Cutoff Current

Symbol

Conditions

Unit

min

max

1.0

=10V, I =0A

μA

CBO

Emitter Cutoff Current

DC Current Gain

=1V, I =0A

EBO

=5V, I =20mA

60*

270*

Continued on next page.

* : The 2SC5226A is classified by 20mA hFE as follows :

Marking

Rank

LN3

LN4

LN5

60 to 120

90 to 180

135 to 270

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

equipment.

's products or

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51408AB TI IM TC-00001340

No. A1062-1/6

2SC5226A

Continued from preceding page.

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Gain-Bandwidth Product

Output Capacitance

=5V, I =20mA

GHz

Cob

=10V, f=1MHz

0.75

0.5

1.2

Reverse Transfer Capacitance

Cre

S21e ²1

S21e ²2

=5V, I =20mA, f=1GHz

⏐

Forward Transfer Gain

Noise Figure

=2V, I =3mA, f=1GHz

⏐

=5V, I =7mA, f=1GHz

1.0

1.8

Package Dimensions

unit : mm (typ)

7023-009

0.3

0.15

0 to 0.1

0.65 0.65

0.3

0.6

0.9

2.0

1 : Base

2 : Emitter

3 : Collector

SANYO : MCP

-- I

=5V

100

1.0

100

ITR07919

Collector Current, I -- mA

ITR07920

Cob -- V

Cre -- V

f=1MHz

1.0

0.1

1.0

0.1

1.0

0.1

Collector-to-Base Voltage, V

-- V ^ITR07921

Collector-to-Base Voltage, V

-- V ^ITR07922

No. A1062-2/6

2SC5226A

S21e

-- I

NF -- I

⏐

f=1GHz

=5V

f=1GHz

1.0

100

ITR07924

100

Collector Current, I -- mA

ITR07923

-- Ta

160

150

140

120

100

120

140

160

Ambient Temperature, Ta -- °C

ITR07925

No. A1062-3/6

2SC5226A

S Parameters

f=100MHz, 200MHz to 2000MHz(200MHz Step)

90°

=5V

j50

60°

120°

I =20mA

j25

j100

j150

j200

j250

150°

0.1GHz

30°

=2V

I =3mA

j10

2.0GHz

0.1GHz

2.0GHz

100

150

250

180°

=5V

=2V

I =3mA

I =20mA

=5V

I =7mA

0.1GHz

--j250

--j200

--j10

--30°

--150°

--j150

0.1GHz

--j100

--j25

--60°

--120°

--j50

--90°

ITR07926

ITR07927

f=100MHz, 200MHz to 2000MHz(200MHz Step)

90°

j50

2.0GHz

120°

60°

2.0GHz

j25

j100

=5V

I =20mA

2.0GHz

=2V

j150

150°

j200

j250

30°

I =3mA

j10

=5V

0.1GHz

I =7mA

250

0.04

100

0.08 0.12 0.16

150

=5V

180°

^0.20

I =20mA

--j250

--j200

--j10

2.0GHz

=2V

I =3mA

--30°

--150°

--j150

--j100

--j25

--60°

--120°

--j50

--90°

ITR07928

ITR07929

No. A1062-4/6

2SC5226A

S Parameters (Common emitter)

=5V, I =7mA, Z =50Ω

Freq(MHz)

100

∠S₁₁

--46.0

--80.9

--121.3

--143.5

--157.6

--167.5

--176.1

176.6

∠S₂₁

148.5

127.3

105.0

92.8

84.3

77.0

70.3

64.5

57.4

54.2

49.2

∠S₁₂

68.5

57.1

51.3

52.9

55.4

56.8

57.9

58.4

58.9

58.6

58.1

⏐

∠S₂₂

--23.6

--37.6

--47.6

--50.5

--51.8

--53.4

--55.8

--58.3

--62.0

--65.0

--68.1

⏐

0.720

0.612

0.497

0.456

0.440

0.436

0.434

0.433

0.434

0.439

17.973

13.927

8.656

6.080

4.725

3.864

3.258

2.847

2.329

2.252

2.057

0.030

0.047

0.066

0.079

0.094

0.110

0.126

0.143

0.160

0.178

0.197

0.880

0.697

0.479

0.382

0.339

0.323

0.312

0.304

0.296

0.293

0.294

200

400

600

800

1000

1200

1400

1600

1800

2000

170.9

165.0

159.6

=5V, I =20mA, Z =50Ω

Freq(MHz)

100

∠S₁₁

--78.8

--119.2

--151.6

--166.4

--175.9

178.2

172.1

166.7

162.1

156.7

152.1

∠S₂₁

132.9

112.2

95.4

86.6

80.1

74.1

68.5

63.6

58.8

54.3

50.1

∠S₁₂

63.9

60.8

64.7

67.2

68.4

67.8

66.8

65.6

64.0

62.4

60.6

⏐ ⏐

∠S₂₂

--38.2

--51.1

--55.3

--56.1

--56.6

--57.9

--60.7

--63.5

--67.9

--71.2

--74.2

⏐

0.481

0.420

0.391

0.386

0.381

0.382

0.385

0.388

0.390

0.391

0.394

29.795

19.008

10.416

7.084

5.407

4.401

3.701

3.217

2.839

2.534

2.319

0.022

0.033

0.052

0.071

0.092

0.114

0.134

0.156

0.176

0.197

0.219

0.707

0.470

0.296

0.236

0.213

0.208

0.204

0.202

0.199

0.197

200

400

600

800

1000

1200

1400

1600

1800

2000

=2V, I =3mA, Z =50Ω

Freq(MHz)

100

∠S₁₁

--32.4

∠S₂₁

157.2

138.5

113.8

98.4

87.7

78.5

70.5

63.5

57.1

51.7

45.9

∠S₁₂

72.6

59.2

44.5

39.1

38.0

38.6

40.3

42.5

45.0

47.3

49.2

⏐

∠S₂₂

--16.5

--29.3

--43.2

--50.0

--53.8

--57.1

--60.3

--63.8

--68.0

--72.0

--75.8

⏐

0.858

0.782

0.653

0.588

0.557

0.543

0.536

0.533

0.527

0.525

0.528

9.413

8.187

5.855

4.337

3.444

2.871

2.446

2.145

1.904

1.714

1.564

0.040

0.070

0.101

0.114

0.122

0.130

0.137

0.146

0.155

0.168

0.183

0.945

0.833

0.637

0.515

0.454

0.426

0.407

0.393

0.382

0.379

0.378

200

--60.7

400

--101.1

--126.5

--143.7

--156.3

--166.8

--175.5

177.0

600

800

1000

1200

1400

1600

1800

2000

170.3

163.8

No. A1062-5/6

2SC5226A

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,

without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s

intellectual property rights which has resulted from the use of the technical information and products mentioned

above.

This catalog provides information as of May, 2008. Specifications and information herein are subject

to change without notice.

PSNo. A1062-6/6

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