2SC5551A-E [ONSEMI]
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN;
| 型号： | 2SC5551A-E |
| 厂家： | 
ONSEMI |
| 描述： | RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN 放大器 PC 晶体管 |
| 文件： | 总4页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1118
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
Amplifier Applications
2SC5551A
Features
•
High f : (f =3.5GHz typ).
T
T
•
•
Large current : (I =300mA).
C
Large allowable collector dissipation (1.3W max).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
40
30
CBO
CEO
EBO
V
2
V
I
I
300
600
1.3
150
mA
mA
W
C
Collector Current (Pulse)
Collector Dissipation
CP
P
When mounted on ceramic substrate (250mm2✕0.8mm)
C
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
=20V, I =0A
μA
μA
CBO
CB
E
=1V, I =0A
5.0
EBO
EB
C
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
www.semiconductor-sanyo.com/network
D0209AB TK IM TC-00002042
No. A1118-1/4
2SC5551A
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=5V, I =50mA
Unit
min
max
270
h
h
1
2
V
V
V
V
V
90
20
FE
CE
CE
CE
CB
CB
C
DC Current Gain
=5V, I =300mA
FE
C
Gain-Bandwidth Product
f
=5V, I =50mA
C
3.5
2.9
GHz
pF
pF
V
T
Output Capacitance
Cob
Cre
=10V, f=1MHz
=10V, f=1MHz
4.0
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
1.5
V
V
(sat)
CE
I
C
C
=50mA, I =5mA
0.07
0.8
0.3
1.2
B
(sat)
BE
I
=50mA, I =5mA
V
B
* : The 2SC5551A is classified by 50mA h as follows :
FE
Marking
Rank
EB E
E
EB F
F
h
90 to 180
135 to 270
FE
Package Dimensions
unit : mm (typ)
7007B-004
I
-- V
h
FE
-- I
C
CE
C
1000
100
80
V
CE
=5V
7
5
3
2
60
100
7
5
40
3
2
100μA
50μA
I =0μA
20
0
B
10
1.0
0
4
20
2
3
2
3
5
7
2
3
5
7
8
12
16
5
7
1000
IT01067
10
100
IT01066
Collector Current, I -- mA
Collector-to-Emitter Voltage, V
-- V
C
CE
No. A1118-2/4
2SC5551A
2
V
(sat) -- I
S21e
-- I
⏐
⏐
CE
C
C
7
5
20
18
16
14
I
C
/ I =10
B
V
CE
=5V
3
2
12
10
8
0.1
7
5
6
4
3
2
2
0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
1.0
10
100
1000
IT01069
Collector Current, I -- mA
IT15252
Collector Current, I -- mA
C
C
Cob, Cre -- V
CB
f
-- I
T
C
10
10
f=1MHz
V
CE
=5V
7
7
5
5
3
2
1.0
3
2
7
5
3
2
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
IT01070
1.0
10
100
1000
IT01071
Collector-to-Base Voltage, V
-- V
Collector Current, I -- mA
CB
C
A S O
P
-- Ta
C
1.4
1000
When mounted on ceramic substrate
I =600mA
CP
7
1.3
1.2
(250mm2✕0.8mm)
5
I =300mA
C
3
2
1.0
0.8
100
7
5
0.6
0.4
3
2
0.2
0
Ta=25°C
Single pulse
When mounted on ceramic substrate (250mm2✕0.8mm)
10
1.0
2
3
5
80
120
140
160
0
20
40
60
100
2
3
5
7
10
IT01072
-- V
Ambient Temperature, Ta -- °C
IT01073
Collector-to-Emitter Voltage, V
CE
No. A1118-3/4
2SC5551A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of December, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1118-4/4
相关型号：
2SC5551A-F
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN
ONSEMI
©2020 ICPDF网 联系我们和版权申明