2SC6022(TP) [ONSEMI]

TRANSISTOR,BJT,NPN,30V V(BR)CEO,9A I(C),TO-251VAR;
2SC6022(TP)
型号: 2SC6022(TP)
厂家: ONSEMI    ONSEMI
描述:

TRANSISTOR,BJT,NPN,30V V(BR)CEO,9A I(C),TO-251VAR

文件: 总4页 (文件大小:35K)
中文:  中文翻译
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Ordering number : ENN8355  
NPN Epitaxial Planar Silicon Transistor  
2SC6022  
DC / DC Converter Applications  
Applications  
Relay drivers, lamp drivers, motor drivers, flash.  
Features  
Adoption of FBET and MBIT processes.  
Large current capacitance.  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
Narrow h range.  
FE  
High allowable power dissipation.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
40  
30  
6
V
V
I
9
A
C
Collector Current (Pulse)  
Base Current  
I
12  
1.2  
1
A
CP  
I
B
A
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
15  
150  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=30V, I =0A  
Unit  
min  
max  
0.1  
I
V
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
V
V
V
=4V, I =0A  
0.1  
EBO  
C
h
FE  
=2V, I =500mA  
250  
400  
C
Gain-Bandwidth Product  
f
T
=10V, I =500mA  
320  
MHz  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62005EA MS IM TB-00001412 No.8355-1/4  
2SC6022  
Continued from preceding page.  
Parameter  
Ratings  
typ  
Symbol  
Cob  
Conditions  
=10V, f=1MHz  
Unit  
min  
max  
Output Capacitance  
V
40  
pF  
mV  
mV  
V
CB  
I
C
I
C
I
C
I
C
I
C
=2.5A, I =50mA  
100  
150  
B
Collector-to-Emitter Saturation Voltage  
V
V
(sat)  
(sat)  
CE  
=4A, I =200mA  
120  
180  
1.2  
B
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Turn-ON Time  
=2.5A, I =50mA  
0.85  
BE  
B
V
V
V
=10µA, I =0A  
40  
30  
6
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
E
=1mA, R =∞  
BE  
V
I =10µA, I =0A  
V
E
C
t
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
30  
320  
15  
ns  
ns  
ns  
on  
Storage Time  
t
stg  
Fall Time  
t
f
Package Dimensions  
unit : mm  
Package Dimensions  
unit : mm  
7518-003  
7003-003  
2.3  
6.5  
5.0  
6.5  
5.0  
4
2.3  
0.5  
0.5  
4
0.5  
0.85  
0.85  
0.7  
1.2  
1
2
3
0.6  
0 to 0.2  
1.2  
0.6  
0.5  
1 : Base  
2 : Collector  
3 : Emitter  
1 : Base  
2 : Collector  
3 : Emitter  
4 : Collector  
1
2
3
4 : Collector  
2.3 2.3  
SANYO : TP-FA  
2.3 2.3  
SANYO : TP  
Switching Time Test Circuit  
I
B1  
PW=20µs  
D.C.1%  
I
B2  
OUTPUT  
INPUT  
R
B
V
R
L
R
50Ω  
+
+
100µF  
= --5V  
470µF  
V
V
=12V  
CC  
BE  
I =20I = --20I =2.5A  
C
B1  
B2  
I
-- V  
I
-- V  
C BE  
C
CE  
9
8
7
6
5
4
3
2
10  
V
CE  
=2V  
9
8
7
6
5
4
3
2
1
0
1
0
I =0mA  
B
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Collector-to-Emitter Voltage, V  
CE  
-- V  
Base-to-Emitter Voltage, V  
-- V  
IT09466  
IT09467  
BE  
No.8355-2/4  
2SC6022  
h
FE  
-- I  
f
-- I  
C
C
T
5
7
5
V
CE  
=10V  
V
=2V  
CE  
3
2
3
2
100  
7
5
100  
3
7
0.01  
2
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0  
2
3
5
7
0.1  
1.0  
10  
0.1  
Collector Current, I -- A  
C
IT09468  
Collector Current, I -- A  
IT09469  
V
(sat) -- CI  
Cob -- V  
CE  
C
CB  
7
5
5
I
/ I =20  
B
f=1MHz  
C
3
2
3
2
0.1  
7
5
3
2
10  
0.01  
7
5
7
5
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
10  
0.1  
1.0  
10  
0.1  
1.0  
Collector-to-Base Voltage, V  
-- V  
IT09470  
Collector Current, I -- A  
IT09471  
(sat) -- CI  
CB  
V
(sat) -- I  
V
CE  
C
BE  
C
7
5
2
I
/ I =50  
B
I
/ I =50  
B
C
C
3
2
1.0  
0.1  
7
5
7
5
3
2
0.01  
0.01  
3
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
10  
IT09473  
0.1  
1.0  
10  
0.1  
1.0  
Collector Current, I -- A  
Collector Current, I -- A  
C
IT09472  
C
A S O  
P
-- Ta  
C
1.2  
3
2
10ms  
100ms  
1ms  
I
=12A  
10µs  
CP  
10  
7
5
1.0  
0.8  
0.6  
0.4  
I =9A  
C
3
2
1.0  
7
5
3
2
0.1  
7
5
0.2  
0
3
2
Tc=25°C  
Single pulse  
0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
10  
2
3
5
0
20  
40  
60  
80  
100  
120  
140  
160  
0.1  
1.0  
Collector-to-Emitter Voltage, V  
-- V  
Ambient Temperature, Ta -- °C  
IT09507  
IT09508  
CE  
No.8355-3/4  
2SC6022  
P
-- Tc  
C
18  
16  
15  
14  
12  
10  
8
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Case Temperature, Tc -- °C  
IT09509  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer’s  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer’s products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of June, 2005. Specifications and information herein are subject  
to change without notice.  
PS No.8355-4/4  

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