2SC6096 [ONSEMI]
Bipolar Transistor 100V, 2A, Low VCE(sat), NPN Single PCP;型号: | 2SC6096 |
厂家: | ONSEMI |
描述: | Bipolar Transistor 100V, 2A, Low VCE(sat), NPN Single PCP PC |
文件: | 总6页 (文件大小:321K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA0434A
2SC6096
Bipolar Transistor
http://onsemi.com
( )
sat , NPN Single PCP
100V, 2A, Low V
CE
Applicaitons
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
•
•
•
•
•
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
Large current capacity
High-speed switching
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
120
120
100
6.5
Unit
V
Collector-to-Base Voltage
V
CBO
V
V
CES
Collector-to-Emitter Voltage
V
V
CEO
Emitter-to-Base Voltage
Collector Current
V
V
EBO
I
C
2
A
Collector Current (Pulse)
I
CP
3
A
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SC6096-TD-E
2SC6096-TD-H
4.5
1.6
Packing Type: TD
Marking
1.5
TD
1
2
3
0.4
0.5
0.4
1.5
3.0
Electrical Connection
2
0.75
1
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM/62006EA MSIM TB-00002425 No. A0434-1/6
2SC6096
Continued from preceding page.
Parameter
Symbol
Conditions
When mounted on ceramic substrate (250mm2 0.8mm)
Ratings
Unit
mA
W
Base Current
I
400
1.3
B
×
Collector Dissipation
P
C
Tc=25 C
3.5
W
°
Junction Temperature
Storage Temperature
Tj
Tstg
150
C
C
°
°
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
I
V
=80V, I =0A
1
1
A
A
μ
CBO
CB E
Emitter Cutoff Current
I
V
=4V, I =0A
μ
EBO
EB C
DC Current Gain
h
V
CE
=5V, I =100mA
300
600
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=10V, I =300mA
300
13
MHz
pF
mV
V
T
CE C
Cob
V
CB
=10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
V
(sat)
(sat)
I
C
=1A, I =100mA
100
0.85
150
1.2
CE
B
V
I =1A, I =100mA
C B
BE
V
I
C
=10 A, I =0A
120
120
100
6.5
V
μ
(BR)CBO
E
V
I
C
=100 A, R =0
V
μ
Ω
(BR)CES
BE
Collector-to-Emitter Breakdown Voltage
V
I
C
=1mA, R =
∞
BE
V
(BR)CEO
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
40
1100
40
ns
ns
ns
on
Storage Time
See specified Test Circuit.
stg
f
Fall Time
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
V
10
R
R
B
R
L
50Ω
+
+
100μF
470μF
V
= --5V
V
=50V
CC
BE
I =10I = --10I =0.5A
C
B1
B2
Ordering Information
Device
Package
PCP
Shipping
memo
2SC6096-TD-E
1,000pcs./reel
1,000pcs./reel
Pb Free
2SC6096-TD-H
PCP
Pb Free and Halogen Free
I
-- V
I
C
-- V
BE
C
CE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
=5V
CE
0.2
0
I =0mA
B
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT11116
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Collector-to-Emitter Voltage, V
CE
-- V IT11115
Base-to-Emitter Voltage, V -- V
BE
No. A0434-2/6
2SC6096
h
FE
-- I
f
-- I
T C
C
1000
7
5
V
CE
=10V
V
=5V
CE
7
5
3
2
3
2
--25°C
100
100
7
5
7
5
3
3
2
0.01
2
0.01
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
IT11118
0.1
1.0
0.1
1.0
IT11117
Collector Current, I -- A
C
Collector Current, I -- A
C
V
(sat) -- I
C
Cob -- V
CE
CB
100
3
2
f=1MHz
I
/ I =10
B
C
7
5
0.1
7
5
3
2
3
2
10
0.01
7
5
7
5
3
0.01
3
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0
10
100
0.1
1.0
Collector-to-Base Voltage, V
CB
-- V
IT11119
Collector Current, I -- A
C
IT11120
V
(sat) -- I
A S O
BE
C
5
3
2
I
=3A
<10μs
I
/ I =10
B
CP
C
3
2
I =2A
C
1.0
7
5
3
2
1.0
0.1
7
5
7
5
3
2
Tc=25°C
Single Pulse
0.01
0.1
3
0.01
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
5
7
100
2
0.1
1.0
1.0
10
Collector-to-Emitter Voltage, V
-- V
IT11122
Collector Current, I -- A
IT11121
CE
C
P
-- Ta
P
-- Tc
C
C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
IT11124
IT11123
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No. A0434-3/6
2SC6096
Embossed Taping Specification
2SC6096-TD-E, 2SC6096-TD-H
No. A0434-4/6
2SC6096
Outline Drawing
Land Pattern Example
2SC6096-TD-E, 2SC6096-TD-H
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No. A0434-5/6
2SC6096
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A0434-6/6
相关型号:
2SC6097-TL
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN
ONSEMI
©2020 ICPDF网 联系我们和版权申明