2SD1804QTL [ONSEMI]
TRANSISTOR 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal;
| 型号： | 2SD1804QTL |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal 开关 晶体管 |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN2086B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1204/2SD1804
High-Current Switching Applications
Applications
Package Dimensions
unit:mm
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
2045B
[2SB1204/2SD1804]
6.5
Features
2.3
5.0
0.5
4
· Low collector-to-emitter saturation voltage.
· High current and high f .
T
· Excellent linearity of h
· Fast switching time.
· Small and slim package making it easy to make
2SB1204/2SD1804-applied sets smaller.
.
FE
0.85
0.7
1.2
0.6
0.5
1 : Base
1
2
3
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
unit:mm
2044B
[2SB1204/2SD1804]
6.5
2.3
5.0
0.5
4
0.5
0.85
1
2
3
0.6
1.2
1 : Base
0 to 0.2
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503TN (KT)/92098HA (KT)/8309MO/3117AT, TS No.2086–1/5
2SB1204/2SD1804
( ) : 2SB1204
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
(–)60
(–)50
(–)6
(–)8
(–)12
1
V
V
CBO
CEO
EBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
˚C
˚C
Collector Dissipation
P
C
Tc=25˚C
20
Junction Temperature
Storage Temperature
Tj
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
(–)1
Collector Cutoff Current
I
V
=(–)40V, I =0
μA
μA
CBO
CB
EB
CE
CE
E
Emitter Cutoff Current
DC Current Gain
I
V
V
V
=(–)4V, I =0
C
(–)1
EBO
h
h
1
=(–)2V, I =(–)0.5A
C
70*
400*
FE
FE
2
=(–)2V, I =(–)6A
C
35
(130)
180
MHz
MHz
pF
mV
mV
V
Gain-Bandwidth Product
f
V
V
I
=(–)5V, I =(–)1A
C
T
CE
CB
Output Capacitance
C
=(–)10V, f=1MHz
(95)65
200
ob
400
Collector-to-Emitter Saturation Voltage
V
V
=(–)4A, I =(–)0.2A
B
CE(sat)
C
(–250) (–500)
(–)0.95 (–)1.3
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
I
I
I
I
=(–)4A, I =(–)0.2A
B
BE(sat)
C
C
C
V
V
V
=(–)10μA, I =0
(–)60
(–)50
(–)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(–)1mA, R =∞
BE
V
=(–)10μA, I =0
V
E
C
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
(50)
(450)
500
ns
on
ns
Storage Time
Fall Time
t
stg
ns
t
f
20
ns
* : The 2SB1204/2SD1804 are classified by 0.5A h as follows :
FE
Rank
Q
R
S
T
h
70 to 140
100 to 200 140 to 280 200 to 400
FE
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
50Ω
+
+
100μF
470μF
V
= --5V
V
=25V
CC
BE
I =10I = --10I =4A
C B1 B2
(For PNP, the polarity is reversed.)
No.2086–2/5
2SB1204/2SD1804
I
-- V
I
-- V
C CE
C
CE
--10
--8
10
2SB1204
From top
--160mA
--140mA
--120mA
--100mA
2SD1804
From top
100mA
90mA
80mA
70mA
8
6
4
--6
60mA
--4
10mA
--10mA
--2
0
2
0
I =0
I =0
B
B
0
--0.4
--0.8
--1.2
--1.6
--2.0
0
0.4
0.8
1.2
1.6
2.0
ITR09199
Collector-to-Emitter Voltage, V
CE
– V
Collector-to-Emitter Voltage, V
CE
– V
ITR09198
I
-- V
I
-- V
C CE
C
CE
--5
--4
--3
--2
5
4
3
2
2SB1204
2SD1804
20mA
5mA
--5mA
--1
0
1
0
I =0
I =0
B
8
B
0
--2
--4
--6
--8
--10
0
2
4
6
10
Collector-to-Emitter Voltage, V
CE
– V
Collector-to-Emitter Voltage, V – V
CE
ITR09201
ITR09200
I
-- V
I
-- V
BE
C
BE
C
--9
--8
--7
--6
--5
--4
--3
--2
9
8
7
6
5
4
2SD1804
2SB1204
V
CE
=2V
V
CE
= --2V
3
2
--1
0
1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, V
BE
– V
Base-to-Emitter Voltage, V – V
BE
ITR09202
ITR09203
h
FE
-- I
h
FE
-- I
C
C
1000
1000
2SD1804
=2V
2SB1204
7
7
V
V
= --2V
CE
CE
5
5
Ta=75°C
°C
Ta=75
3
2
3
2
25°C
--25°C
C
25°
100
100
7
5
7
5
3
2
3
2
10
--0.01
10
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
2
3
5
7
10
2
--0.1
--1.0
--10
0.1
1.0
Collector Current, I – A
Collector Current, I – A
C
ITR09204
ITR09205
C
No.2086–3/5
2SB1204/2SD1804
f
-- I
f
-- I
T
C
T
C
5
5
2SB1204
2SD1804
V
= --5V
V
=5V
CE
CE
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
2
5
5
5
3
5
7
2
3
5
7
2
3
5
7
2
5
5
5
3
5
7
2
3
5
7
2
3
5
7
10
--0.1
--1.0
--10
0.1
1.0
Collector Current, I – A
Collector Current, I – A
C
ITR09206
ITR09207
C
Cob -- V
CB
Cob -- V
CB
5
5
2SB1204
f=1MHz
2SD1804
f=1MHz
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
Collector-to-Base Voltage, V
-- V
1.0Collector-to-Base Voltage, V
-- V
CB
--1.0
--10
--100
ITR09208
10
100
ITR09209
CB
V
(sat) -- I
V
(sat) -- I
CE
CE
C
C
--1000
1000
2SB1204
/ I =20
2SD1804
7
7
I
I
/ I =20
C
B
C
B
5
5
3
2
3
2
--100
100
7
5
7
5
3
2
3
2
--10
10
7
2
3
5
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.01
--0.1
--1.0
--10
ITR09210
0.01
0.1
1.0
10
ITR09211
Collector Current, I – A
Collector Current, I – A
C
C
V
(sat) -- I
V
(sat) -- I
BE
BE
C
C
--10
10
2SD1804
2SB1204
/ I =20
7
7
I
I / I =20
C
B
C B
5
5
3
2
3
2
--1.0
1.0
7
5
7
5
3
2
3
2
7
2
3
5
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.01
--0.1
--1.0
--10
ITR09212
0.01
0.1
10
ITR09213
Collector Current, I – A
Collector Current, I –1.A0
C
C
No.2086–4/5
2SB1204/2SD1804
A S O
P
-- Ta
C
2
24
I
=12A
2SB1204 / 2SD1804
2SB1204 / 2SD1804
CP
10
7
5
I =8A
20
16
12
8
C
3
2
1.0
7
5
3
2
0.1
7
5
4
Tc=25°C
3
2
Single pulse
1
0
(For PNP, minus sign is omitted.)
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
20
40
60
80
100
120
140
160
Collector-1to.0-Emitter Voltage,1V0
– V
100
ITR09214
Ambient Temperature, Ta – ˚C
ITR09215
CE
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
PS No.2086–5/5
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