2SD1815QTP [ONSEMI]

Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP, 4 PIN;


型号：	2SD1815QTP
厂家：	ONSEMI
描述：	Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TP, 4 PIN
文件：	总5页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number:ENN2539B

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1215/2SD1815

High-Current Switching Applications

Applications

Package Dimensions

unit:mm

· Relay drivers, high-speed inverters, converters, and

other general high-current switching applications.

2045B

[2SB1215/2SD1815]

6.5

Features

2.3

5.0

0.5

· Low collector-to-emitter saturation voltage.

· Excllent linearity of h

· Small-sized package permitting 2SB1215/2SD1815-

applied sets to be made small and slim.

0.85

0.7

· High f .

1.2

· Fast switching time.

0.6

0.5

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

2.3

unit:mm

2044B

[2SB1215/2SD1815]

6.5

2.3

5.0

0.5

0.85

0.6

1.2

1 : Base

0 to 0.2

2 : Collector

3 : Emitter

2.3

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N2503TN (KT)/92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No.2539–1/5

2SB1215/2SD1815

( ) : 2SB1215

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)120

(–)100

(–)6

(–)3

(–)6

CBO

CEO

EBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

˚C

Collector Dissipation

Tc=25˚C

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

Parameter

Symbol

Conditions

Unit

min

typ

max

(–)1

Collector Cutoff Current

=(–)100V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

(–)1

EBO

=(–)5V, I =(–)0.5A

70*

400*

=(–)5V, I =(–)2A

(130)

180

MHz

Gain-Bandwidth Product

=(–)10V, I =(–)0.5A

Output Capacitance

=(–)10V, f=1MHz

(40)25

150

400

Collector-to-Emitter Saturation Voltage

=(–)1.5A, I =(–)0.15A

CE(sat)

(–200) (–500)

(–)0.9 (–)1.2

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

=(–)1.5A, I =(–)0.15A

BE(sat)

=(–)10µA, I =0

(–)120

(–)100

(–)6

(BR)CBO

(BR)CEO

(BR)EBO

=(–)1mA, R =∞

=(–)10µA, I =0

See specified Test Circuit

100

(800)

900

Storage Time

Fall Time

stg

* : The 2SB1215/2SD1815 are classified by 100mA h as follows :

Rank

70 to 140

100 to 200 140 to 280 200 to 400

Switching Time Test Circuit

PW=20µs

D.C.≤1%

OUTPUT

INPUT

50Ω

100µF

470µF

= --5V

=50V

I =10I = --10I =1.5A

B1 B2

(For PNP, the polarity is reversed.)

No.2539–2/5

2SB1215/2SD1815

-- V

2.0

--2.0

--1.6

--1.2

--0.8

2SB1215

2SD1815

1.6

1.2

0.8

2mA

--0.4

0.4

I =0

--4

I =0

--1

--2

--3

--5

ITR09233

Collector-to-Emitter Voltage, V

– V

Collector-to-Emitter Voltage, V

– V

ITR09234

-- V

C CE

--1.0

--0.8

--0.6

--0.4

1.0

0.8

0.6

0.4

2SB1215

2SD1815

--0.2

0.2

0.5mA

I =0

--10

--20

--30

--40

--50

ITR09235

Collector-to-Emitter Voltage, V – V

CE ITR09236

Collector-to-Emitter Voltage, V

– V

-- V

--3.5

--3.0

--2.5

--2.0

--1.5

--1.0

3.5

3.0

2.5

2.0

1.5

1.0

2SB1215

= --5V

2SD1815

V =5V

--0.5

0.5

--0.2

--0.4

--0.6

--0.8

--1.0

– V

--1.2

ITR09237

0.2

0.4

0.6

0.8

1.0

1.2

ITR09238

Base-to-Emitter Voltage, V

Base-to-Emitter Voltage, V – V

-- I

1000

2SB1215

2SD1815

=5V

= --5V

Ta=75°C

25°C

--25°C

100

--1.0

--10

ITR09239

1.0

ITR09240

--0.01

--0.1

0.01

0.1

Collector Current, I – A

No.2539–3/5

2SB1215/2SD1815

-- I

Cob -- V

2SB1215 / 2SD1815

=10V

2SB1215 / 2SD1815

f=1MHz

100

(For PNP, minus sign is omitted.)

100

0.1

1.0

Collector Current, I – A

Collector-to-Base Voltage, V

-- V

ITR09241

ITR09242

(sat) -- I

CE C

2SB1215

2SD1815

/ I =10

--1000

1000

--100

100

25°C

Ta=75

--25

°C

Ta=75°

--10

ITR09243

ITR09244

--0.01

--0.1

0.01

0.1

Collector Current, I –^--1A^.0

Collector Current, I –^1.A⁰

(sat) -- I

--10

2SB1215

/ I =10

2SD1815

/ I =10

25°C

--1.0

1.0

--1.0

--0.01

--0.1

0.01

1.0

Collector⁰C^.1urrent, I – A

Collector Current, I – A

ITR09245

ITR09246

A S O

-- Ta

1.2

1.0

0.8

0.6

0.4

=6A

2SB1215 / 2SD1815

I =3A

1.0

0.1

0.2

Tc=25°C

Single pulse

(For PNP, minus sign is omitted.)

0.01

100

120

140

160

1.0

100

Collector-to-Emitter Voltage, V

– V

Ambient Temperature, Ta – ˚C

ITR09247

ITR09248

No.2539–4/5

2SB1215/2SD1815

-- Tc

2SB1215 / 2SD1815

100

120

140

160

Case Temperature, Tc – ˚C

ITR09249

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of November, 2003. Specifications and information herein are subject

to change without notice.

PS No.2539–5/5

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