2SK3746-1E [ONSEMI]
N 沟道,功率 MOSFET,1500V,2A,13Ω,TO-3P-3L;型号: | 2SK3746-1E |
厂家: | ONSEMI |
描述: | N 沟道,功率 MOSFET,1500V,2A,13Ω,TO-3P-3L 局域网 开关 脉冲 晶体管 |
文件: | 总7页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN8283A
2SK3746
N-Channel Power MOSFET
http://onsemi.com
Ω
1500V, 2A, 13 , TO-3P-3L
Features
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching
•
High reliability (Adoption of HVP process)
•
Avalanche resistance guarantee
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
1500
DSS
V
±20
V
GSS
I
2
A
D
Drain Current (Pulse)
I
DP
PW 10 s, duty cycle 1%
4
A
≤
μ
≤
2.5
W
W
Allowable Power Dissipation
P
D
Tc=25 C
110
°
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
41
2
mJ
A
AS
I
AV
1 V =50V, L=20mH, I =2A (Fig.1)
*
DD
2 L 20mH, single pulse
AV
*
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: TO-3P-3L
7539-002
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
2SK3746-1E
4.8
15.6
Marking
Electrical Connection
7.0
1.5
3.2
2
K3746
LOT No.
13.6
1
2.0
3.0
1.0
0.6
3
1
2
3
1 : Gate
2 : Drain
3 : Source
5.45
5.45
TO-3P-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002762/62005QB MSIM TB-00001345 No.8283-1/7
2SK3746
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
1500
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=1200V, V =0V
I
I
V
V
V
V
100
DSS
DS
GS
DS
DS
GS
=16V, V =0V
DS
±10
3.5
GSS
V
(off)
GS
=10V, I =1mA
2.5
0.7
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
| yfs |
(on)
=20V, I =1A
1.4
S
D
R
I
=1A, V =10V
D GS
10
380
70
13
Ω
DS
Ciss
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
V
=30V, f=1MHz
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
40
t
t
t
t
(on)
12
d
r
Rise Time
37
See Fig.2
Turn-OFF Delay Time
(off)
152
59
d
f
Fall Time
Total Gate Charge
Qg
37.5
2.7
20
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=200V, V =10V, I =2A
GS
DS
D
V
I =2A, V =0V
GS
0.88
1.2
SD
S
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
V
V
=200V
DD
IN
L
r507
RG
10V
0V
I
=1A
D
V
R =200Ω
IN
L
2SK3746
D
V
OUT
10V
507
0V
V
DD
PW=10μs
D.C.≤0.5%
G
2SK3746
P.G
S
R
=50Ω
GS
Ordering Information
Device
Package
Shipping
memo
Pb Free
2SK3746-1E
TO-3P-3L
30pcs./magazine
No.8283-2/7
2SK3746
I
D
-- V
I
D
-- V
GS
DS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
Tc=25°C
pulse
V =20V
DS
pulse
Tc= --25°C
25°C
75°C
6V
5V
0.5
0
0.5
0
V
=4V
GS
0
0
3
5
2
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
-- V
IT09031
Gate-to-Source Voltage, V -- V
GS
IT09032
DS
GS
R
(on) -- V
R
(on) -- Tc
DS
DS
30
25
20
15
10
30
25
20
15
10
I =1A
V
I =1A
D
D
=10V
GS
Tc=75°C
25°C
--25°C
5
0
5
0
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
IT09033
Case Temperature, Tc -- °C
IT09034
GS
| yfs | -- I
I
-- V
SD
D
S
5
10
7
5
V
=20V
V
=0V
GS
DS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.01
0.2
0.1
5
7
2
3
5
7
2
3
0.4
0.6
0.8
1.0
1.2
0.1
1.0
Drain Current, I -- A
IT09035
IT09036
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
DS
-- V
D
SW Time -- I
D
5
f=1MHz
V
=200V
=10V
DD
3
2
V
GS
3
2
1000
7
5
100
7
3
2
5
100
7
5
3
2
3
2
t (on)
d
10
0.1
10
0
5
10
15
20
25
30
35
40
45
50
2
3
5
7
2
3
1.0
Drain Current, I -- A
IT09038
IT09037
Drain-to-Source Voltage, V
-- V
D
DS
No.8283-3/7
2SK3746
V
-- Qg
A S O
GS
10
9
7
5
V
=200V
I
=4A(PW≤10μs)
DS
DP
I =2A
D
3
2
I =2A
D
8
1.0
7
7
5
6
3
2
5
Operation in this area
4
is limited by R (on).
0.1
7
5
DS
3
2
3
2
1
0
Tc=25°C
Single pulse
0.01
1.0
0
10
20
30
40
IT09039
2
3
5
7
2
3
5
7
2
3
5
7
2 3
1000
IT16891
10
100
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
P
D
-- Tc
D
120
110
100
3.0
2.5
2.0
1.5
1.0
80
60
40
0.5
0
20
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT09041
IT09042
Case Temperature, Tc -- °C
No.8283-4/7
2SK3746
Magazine Specification
2SK3746-1E
No.8283-5/7
2SK3746
Outline Drawing
2SK3746-1E
Mass (g) Unit
1.8
mm
* For reference
No.8283-6/7
2SK3746
Note on usage : Since the 2SK3746 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.8283-7/7
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