2SK3979TP-FA [ONSEMI]

Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP-FA, 3 PIN;
2SK3979TP-FA
型号: 2SK3979TP-FA
厂家: ONSEMI    ONSEMI
描述:

Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP-FA, 3 PIN

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Ordering number : ENA0263A  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3979  
Features  
Low ON-resistance.  
Ultrahigh-speed switching.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
200  
±30  
6
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
D
A
Drain Current (Pulse)  
I
PW10μs, duty cycle1%  
24  
1
A
DP  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25°C  
20  
150  
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=1mA, V =0V  
Unit  
min  
200  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
V
μA  
μA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=200V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±24V, V =0V  
DS  
±1  
V
(off)  
GS  
=10V, I =1mA  
2.0  
2.1  
3.2  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
yfs  
=10V, I =3A  
3.5  
S
D
R
DS  
(on)  
I
=3A, V =10V  
D GS  
320  
1090  
85  
450  
mΩ  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
V
V
V
=20V, f=1MHz  
DS  
=20V, f=1MHz  
DS  
=20V, f=1MHz  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : K3979  
35  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
No. A0263-1/4  
12710 TK IM / 80906 / 12506PA MS IM TB-00001924  
2SK3979  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
t (on)  
Conditions  
Unit  
min  
max  
Turn-ON Delay Time  
Rise Time  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
17.5  
26  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
d
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
50  
t
f
42  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qg  
V
V
V
=100V, V =10V, I =6A  
GS  
18.2  
8.0  
DS  
DS  
DS  
D
Qgs  
Qgd  
=100V, V =10V, I =6A  
GS  
D
=100V, V =10V, I =6A  
GS  
7.0  
D
V
I =6A, V =0V  
S GS  
0.86  
1.2  
SD  
Package Dimensions  
unit : mm (typ)  
Package Dimensions  
unit : mm (typ)  
7518-004  
7003-004  
2.3  
6.5  
5.0  
6.5  
5.0  
4
2.3  
0.5  
0.5  
4
0.85  
0.7  
0.5  
0.85  
1.2  
1
2
3
0.6  
0 to 0.2  
1.2  
0.6  
0.5  
1 : Gate  
1 : Gate  
2 : Drain  
3 : Source  
4 : Drain  
2 : Drain  
3 : Source  
4 : Drain  
1
2
3
2.3 2.3  
2.3 2.3  
SANYO : TP-FA  
SANYO : TP  
Switching Time Test Circuit  
V
=100V  
DD  
V
IN  
10V  
0V  
I
=3A  
D
V
IN  
R =33.3Ω  
L
D
V
OUT  
PW=10μs  
D.C.1%  
G
2SK3979  
P. G  
50Ω  
S
No. A0263-2/4  
2SK3979  
I
-- V  
I
-- V  
D GS  
D
DS  
6
5
4
3
2
6
5
4
3
2
V =10V  
DS  
V
=4V  
GS  
1
0
1
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
1
2
3
4
5
6
7
Drain-to-Source Voltage, V  
-- V  
IT10503  
Gate-to-Source Voltage, V  
GS  
-- V  
IT10504  
DS  
R
DS  
(on) -- V  
R
DS  
(on) -- Ta  
GS  
700  
600  
500  
400  
300  
200  
700  
600  
500  
400  
300  
200  
Ta=25°C  
I =3A  
D
100  
0
100  
0
0
2
4
6
8
10 12 14 16 18 20 22 24  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Gate-to-Source Voltage, V  
-- V  
IT10505  
Ambient Temperature, Ta -- °C  
IT10506  
GS  
y  
fs-- I  
I
-- V  
SD  
D
S
10  
7
5
10  
7
V =10V  
DS  
V =0V  
GS  
5
3
2
3
2
1.0  
7
5
1.0  
7
3
2
5
0.1  
7
5
3
2
3
2
0.1  
0.01  
0.01  
0.3  
2
3
5
7
2
3
5
7
2
3
5 7  
10  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0.1  
1.0  
IT10507  
IT10508  
Drain Current, I -- A  
Diode Forward Voltage, V  
SD  
-- V  
D
SW Time -- I  
Ciss, Coss, Crss -- V  
D
DS  
3
2
3
2
f=1MHz  
V
V
=100V  
=10V  
DD  
GS  
Ciss  
1000  
1000  
7
5
7
5
3
2
3
2
100  
7
5
t
f
100  
3
2
7
5
t (on)  
d
t
r
10  
3
2
7
5
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
0
5
10  
15  
20  
25  
30  
IT10510  
0.1  
1.0  
10  
IT10509  
Drain Current, I -- A  
Drain-to-Source Voltage, V  
DS  
-- V  
D
No. A0263-3/4  
2SK3979  
V
-- Qg  
A S O  
GS  
10  
9
5
I
=24A  
V
I =6A  
D
=100V  
DP  
DS  
3
2
10  
7
5
8
I =6A  
D
7
3
2
6
1.0  
7
5
5
4
3
2
Operation in this  
area is limited by R (on).  
3
0.1  
7
5
DS  
2
3
2
1
0
Tc=25°C  
Single pulse  
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0
2
4
6
8
10  
12  
14  
16  
18  
20  
1.0  
10  
100  
IT10512  
-- V  
Total Gate Charge, Qg -- nC  
IT10511  
Drain-to-Source Voltage, V  
DS  
P
-- Ta  
P
-- Tc  
D
D
1.2  
1.0  
0.8  
0.6  
0.4  
25  
20  
15  
10  
5
0
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Amibient Tamperature, Ta -- °C  
IT10513  
Case Tamperature, Tc -- °C  
IT10514  
Note on usage : Since the 2SK3979 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s  
intellectual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of January, 2010. Specifications and information herein are subject  
to change without notice.  
No. A0263-4/4  
PS  

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