2SK545-11D-TB-E [ONSEMI]
N 沟道 JFET，40V，55 至 95uA，0.10mS，CP;
| 型号： | 2SK545-11D-TB-E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 JFET，40V，55 至 95uA，0.10mS，CP |
| 文件： | 总5页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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N-Channel JFET
40 V, 55 to 95 mA, 0.10 ms, CP
SC−59 / CP3
2SK545
CASE 318BJ
Features
MARKING DIAGRAM
• Small I
GSS
• Small C
iss
B11
• Ultrasmall Package permitting 2SK545−applied Sets to be Compact
• This is a Pb−Free Device
1
B11 = Specific Device Code
Applications
• Impedance Converter Applications
• Infrared Sensor
ELECTRICAL CONNECTION
3
ABSOLUTE MAXIMUM RATINGS (at T = 25°C)
A
1 : Source
2 : Drain
3 : Gate
Parameter
Drain−to−Source Voltage
Gate−to−Drain Voltage
Gate Current
Symbol
Ratings
Unit
V
V
40
DSS
GDS
V
−40
V
1
2
I
G
10
mA
mA
mW
°C
Drain Current
I
D
1
100
ORDERING INFORMATION
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
D
T
J
125
†
Device
Package
Shipping
T
STG
−55 to +125
°C
2SK545−11D− SC−59/CP3
3000 / Tape & Reel
TB−E (Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
November, 2021 − Rev. 1
2SK545/D
2SK545
Table 1. ELECTRICAL CHARACTERISTICS (at T = 25°C)
A
Parameter
Gate−to−Drain Breakdown Voltage
Gate Cutoff Current
Symbol
Conditions
= −10 mA, V = 0 V
Min
Typ
Max
Unit
V
V
I
−40
(BR)GDS
D
DS
I
V
V
V
V
V
V
= −20 V, V = 0 V
−500
95
pA
mA
V
GSS
GS
DS
DS
DS
DS
DS
DS
Drain Current
I
= 10 V, V = 0 V
55
DSS
GS
Cutoff Voltage
V
GS(off)
= 10 V, I = 1 mA
−1.2
0.10
1.7
−4.0
D
Forward Transfer Admittance
Input Capacitance
|yfs|
= 10 V, V = 0 V, f = 1 kHz
0.05
ms
pF
pF
GS
C
= 10 V, V = 0 V, f = 1 MHz
GS
iss
rss
Reverse Transfer Capacitance
C
= 10 V, V = 0 V, f = 1 MHz
0.7
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
10
0
V
= 10 V
= 75 mA
DS
I
DSS
V
= 0 V
GS
−25°C
−0.2 V
T = 25°C
A
75°C
−0.4 V
−0.6 V
−0.8 V
−1.0 V
10
0
−1.2 V
0
2
4
6
8
10
12
14
16
18
20
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
V
DS
, Drain−to−Source Voltage (V)
V
GS
, Gate−to−Source Voltage (V)
Figure 1. Drain Current vs. Drain−to−Source
Voltage
Figure 2. Drain Current vs. Gate−to−Source
Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.14
0.13
0.12
0.11
0.10
0.09
0.08
V
V
= 10 V
= 0 V
V
I
= 10 V
= 1 mA
DS
DS
GS
D
f = 1 kHz
0.07
0.06
50
60
70
80
90
100
50
60
70
80
90
100
I
, Drain Current (mA)
I
, Drain Current (mA)
DSS
DSS
Figure 3. Cutoff Voltage vs. Drain Current
Figure 4. Forward Transfer Admittance vs. Drain
Current
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2
2SK545
TYPICAL CHARACTERISTICS
120
100
10
7
V
= 0 V
GS
f = 1 MHz
5
80
60
40
3
2
1.0
7
20
0
5
3
1.0
0
20
40
60
80
100
120
140
2
3
5
7
2
3
5
7
10
100
T , Ambient Temperature (5C)
A
V
DS
, Drain−to−Source Voltage (V)
Figure 5. Power Dissipation vs. Ambient
Temperature
Figure 6. Input Capacitance vs. Drain−to−Source
Voltage
5
V
GS
= 0 V
f = 1 MHz
3
2
1.0
7
5
3
2
0.1
1.0
2
3
5
7
23
57
10
100
V
DS
, Drain−to−Source Voltage (V)
Figure 7. Reverse Transfer Capacitance vs.
Drain−to−Source Voltage
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−59 / CP3
CASE 318BJ
ISSUE O
DATE 09 JAN 2015
SCALE 2:1
NOTES:
D
A
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3X L
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE.
4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP.
3
E1
E
1
MILLIMETERS
2
DIM
A
A1
A2
b
c
D
E
E1
e
MIN
0.95
0.00
0.20
0.35
0.10
2.75
2.30
1.35
MAX
1.35
0.10
0.40
0.50
0.20
3.05
2.70
1.65
e
3X b
M
0.10
C A
TOP VIEW
SIDE VIEW
A
0.95 BSC
0.35
c
3X
L
0.75
A2
GENERIC
A1
SEATING
PLANE
C
MARKING DIAGRAM
END VIEW
XXX MG
RECOMMENDED
G
SOLDERING FOOTPRINT*
3X
1
3X
0.80
1.00
XXX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3.40
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON94458F
SC−59 / CP3
PAGE 1 OF 1
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