2SK932-23-TB-E [ONSEMI]
N 沟道 JFET，15V，5 至 24mA，50mS，CP;
| 型号： | 2SK932-23-TB-E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 JFET，15V，5 至 24mA，50mS，CP |
| 文件： | 总6页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
3
N-Channel JFET
15 V, 10 to 24 mA, 50 mS, CP
2SK932
1: Source
2: Drain
3: Gate
1
2
SC−59 / CP3
CASE 318BJ
Applications
MARKING DIAGRAM
E
• AM Tuner RF Amplification, Low Noise Amplifier
Features
• Adoption of FBET Process
• Large | yfs |
• Small Ciss
• Ultralow Noise Figure
• Ultrasmall−sized Package Permitting 2SK932−applied Sets to be
Made Smaller and Slimer
ELECTRICAL CONNECTION
• These are Pb−Free Devices
3
Specifications
ABSOLUTE MAXIMUM RATINGS ( T = 25°C)
A
Parameter
Drain−to−Source Voltage
Gate−to−Drain Voltage
Gate Current
Symbol Conditions
Ratings
Unit
V
1
2
V
15
−15
DSX
GDS
V
V
I
G
10
mA
mA
mW
°C
ORDERING INFORMATION
Drain Current
I
D
50
†
Device
Package
Shipping
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
D
200
2SK932−23−TB−E
CP
3,000 / Tape &
Reel
(Pb−Free)
Tj
Tstg
150
2SK932−24−TB−E
CP
3,000 / Tape &
Reel
−55 to +150
°C
(Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2022 − Rev. 4
2SK932/D
2SK932
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Ratings
Typ
−
Min
−15
−
Max
−
Parameter
Gate−to−Drain Breakdown Voltage
Gate−to−Source Leakage Current
Zero−Gate Voltage Drain Current
Cutoff Voltage
Symbol
Conditions
I = −10 mA, V = 0 V
G
Unit
V
V
(BR)GDS
DS
I
V
GS
V
DS
V
DS
V
DS
V
DS
= −10 V, V = 0 V
−
−1.0
24.0*
−1.4
−
nA
mA
V
GSS
DS
I
= −5 V, V = 0 V
10.0*
−0.2
25
−
DSS
GS
V
GS
(off)
= 5 V, I = 100 mA
−0.6
50
D
Forward Transfer Admittance
Input Capacitance
| yfs |
Ciss
Crss
NF
= 5 V, V = 0 V, f = 1 kHz
mS
pF
pF
dB
GS
= 5 V, V = 0 V, f = 1 MHz
−
10
−
GS
Reverse Transfer Capacitance
Noise Figure
−
3.0
1.5
−
V
DS
= 5 V, R = 1 kW, I = 1 mA, f = 1 kHz
−
−
g
D
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*The 2SK932 is classified by I
as follows: (unit: mA)
DSS
Rank
23
10.0 to 17.0
24
I
14.5 to 24.0
DSS
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2
2SK932
16
14
12
10
8
20
16
12
8
V
= 0
GS
V
= 0
GS
−0.1 V
−0.1 V
6
−0.2 V
−0.3 V
−0.2 V
−0.3 V
4
4
−0.6 V
−0.6 V
2
−0.4 V
−0.5 V
−0.4 V
−0.5 V
0
2
0
0
0.4
0.8
1.2
1.6
2.0
0
3
3
2
4
6
8
10
V
DS
, Drain−to−Source Voltage (V)
V
DS
, Drain−to−Source Voltage (V)
Figure 1. ID − VDS
Figure 2. ID − VDS
40
30
20
10
0
V
DS
= 5 V
V
= 5 V
= 15 mA
DS
I
DSS
−1.0
7
5
I
= 20 mA
DSS
3
2
15 mA
10 mA
−0.2
−0.1
−1.2
−1.0
V
−0.8
−0.6
−0.4
0
5
7
2
3
5
10
, Gate−to−Source Voltage (V)
I
DSS
, Saturation Drain Current (mA)
GS
Figure 3. ID − VGS
Figure 4. VGS(off) − IDSS
100
100
V
DS
= 5 V
f = 1 kHz
V
V
= 5 V
= 0
DS
7
5
GS
7
20 mA
f = 1 kHz
10 mA
5
3
2
3
2
10
7
5
3
1.0
10
2
3
5
7
2
3
5
5
7
2
3
5
10
10
, Saturation Drain Current (mA)
DSS
I , Drain Current (mA)
I
D
Figure 5. Y yfs Y − ID
Figure 6. Y yfs Y − IDSS
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3
2SK932
3
2
10
V
= 0
V
= 0
GS
GS
7
f = 1 MHz
f = 1 MHz
5
10
3
2
7
5
3
2
1.0
7
5
1.0
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0
V
10
1.0
10
, Drain−to−Source Voltage (V)
DS
, Drain−to−Source Voltage (V)
V
DS
Figure 7. Ciss − VDS
Figure 8. Crss − VDS
14
12
10
8
14
12
10
8
V
= 5 V
= 10 mA
V
= 5 V
DS
DS
I
D
Rg = 1 kW
Rg = 500 W
I
D
= 1 mA
6
6
1 kW
3 mA
10 kW
4
4
2
2
10 mA
0
10
0
10
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
2
5
1M
100
1k
10k
100k
1M
100
1k
10k
100k
f, Frequency (kHz)
f, Frequency (kHz)
Figure 9. NF − f
Figure 10. NF − f
240
200
160
120
80
40
0
0
20
40
60
80 100 120 140 160
TA, Ambient Temperature (°C)
Figure 11. PD − TA
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−59 / CP3
CASE 318BJ
ISSUE O
DATE 09 JAN 2015
SCALE 2:1
NOTES:
D
A
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3X L
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE.
4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP.
3
E1
E
1
MILLIMETERS
2
DIM
A
A1
A2
b
c
D
E
E1
e
MIN
0.95
0.00
0.20
0.35
0.10
2.75
2.30
1.35
MAX
1.35
0.10
0.40
0.50
0.20
3.05
2.70
1.65
e
3X b
M
0.10
C A
TOP VIEW
SIDE VIEW
A
0.95 BSC
0.35
c
3X
L
0.75
A2
GENERIC
A1
SEATING
PLANE
C
MARKING DIAGRAM
END VIEW
XXX MG
RECOMMENDED
G
SOLDERING FOOTPRINT*
3X
1
3X
0.80
1.00
XXX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3.40
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON94458F
SC−59 / CP3
PAGE 1 OF 1
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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