3LN01C-TB-H [ONSEMI]
小信号 MOSFET，30V，150mA，3.7 Ω，单 N 沟道，CP;
| 型号： | 3LN01C-TB-H |
| 厂家： | 
ONSEMI |
| 描述： | 小信号 MOSFET，30V，150mA，3.7 Ω，单 N 沟道，CP |
| 文件： | 总6页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6260C
3LN01C
N-Channel Small Signal MOSFET
http://onsemi.com
Ω
30V, 0.15A, 3.7 , Single CP
Features
•
Low ON-resistance
•
Ultrahigh-speed switching
•
2.5V drive
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
30
Unit
V
V
DSS
V
±10
V
GSS
I
0.15
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
0.6
A
≤
μ
≤
DP
P
0.25
W
°C
°C
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Ordering & Package Information
Device
Package
Shipping
memo
7013A-013
CP
3,000
pcs./reel
3LN01C-TB-E
SC-59, TO-236,
SOT-23, TO-236AB
Pb-Free
2.9
0.1
3LN01C-TB-E
3LN01C-TB-H
CP
Pb-Free
and
Halogen Free
3
3,000
pcs./reel
3LN01C-TB-H
SC-59, TO-236,
SOT-23, TO-236AB
Packing Type: TB
Marking
1
2
0.95
0.4
YA
1 : Gate
TB
2 : Source
3 : Drain
CP
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6
3LN01C
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D
GS
I
V
=30V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
1.3
μ
GSS
GS DS
V
(off)
|
V
=10V, I =100
A
μ
0.4
V
GS
yfs
DS
D
Forward Transfer Admittance
V
=10V, I =80mA
D
0.15
0.22
2.9
S
|
DS
R
R
R
(on)1
(on)2
(on)3
I
=80mA, V =4V
3.7
5.2
Ω
DS
DS
DS
D GS
Static Drain to Source On-State Resistance
I
D
=40mA, V =2.5V
GS
3.7
Ω
I
D
=10mA, V =1.5V
GS
6.4
12.8
Ω
Input Capacitance
Ciss
7.0
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
5.9
DS
2.3
t
t
t
t
(on)
19
d
r
65
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
155
120
1.58
0.26
0.31
0.87
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=10V, V =10V, I =150mA
GS
D
V
SD
I =150mA, V =0V
S GS
1.2
Switching Time Test Circuit
V
=15V
DD
V
IN
4V
0V
I
=80mA
L
D
V
R =187.5Ω
IN
PW=10μs
D.C.≤1%
D
V
OUT
G
3LN01C
P.G
50Ω
S
No.6260-2/6
3LN01C
I
D
-- V
DS
I
D
-- V
GS
0.30
0.25
0.20
0.15
0.10
0.16
V
=10V
DS
0.14
0.12
0.10
0.08
3.5V
4.0V
V
=1.5V
GS
0.06
0.04
0.05
0
0.02
0
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
Drain to Source Voltage, V
DS
-- V
IT00029
Gate to Source Voltage, V
GS
-- V
R
(on) -- I
R
(on) -- V
DS
D
DS
GS
10
7
10
9
Ta=25°C
V
=4V
GS
8
7
5
I
D
=80mA
Ta=75°C
25°C
6
5
4
3
2
40mA
3
2
--25°C
1
0
1.0
0.01
2
2
2
3
3
3
5
7
2
3
5
7
0
1
2
3
4
5
6
7
8
9
10
0.1
1.0
IT00031
IT00032
Gate to Source Voltage, V
GS
-- V
Drain Current, I -- A
D
R
(on) -- I
R
(on) -- I
DS
D
DS
D
10
100
V
=2.5V
V
=1.5V
GS
GS
7
5
7
5
3
2
Ta=75°C
25°C
--25°C
10
Ta=75°C
--25°C
3
2
7
5
3
2
25°C
1.0
1.0
0.001
2
3
5
7
2
3
5
7
5
7
2
3
5
7
0.01
0.1
1.0
IT00033
0.01
0.1
IT00034
Drain Current, I -- A
Drain Current, I -- A
D
D
R
(on) -- Ta
| yfs | -- I
DS
D
1.0
7
V
=10V
DS
7
5
6
3
2
5
4
3
2
25°C
0.1
7
5
3
2
1
0
0.01
0.01
--60 --40 --20
0
20
40
60
80 100 120 140 160
5
7
2
3
5
7
0.1
1.0
Ambient Temperature, Ta -- °C
Drain Current, I -- A
IT00035
IT00036
D
No.6260-3/6
3LN01C
I
S
-- V
SD
SW Time -- I
D
1.0
1000
V
V
=15V
V
=0V
DD
=4V
GS
7
7
GS
5
5
3
2
3
2
t
f
100
0.1
7
5
7
5
t
r
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
2
3
5
7
2
0.1
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
IT00038
Ciss, Coss, Crss -- V
V
-- Qg
DS
GS
10
100
V
=10V
=150mA
f=1MHz
DS
7
9
8
7
I
D
5
3
2
6
5
4
3
2
1
0
10
Ciss
7
5
Coss
3
2
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT00039
IT00040
Drain to Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
DS
P
-- Ta
D
0.30
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT00041
No.6260-4/6
3LN01C
Outline Drawing
Land Pattern Example
3LN01C-TB-E, 3LN01C-TB-H
Mass (g) Unit
0.013
Unit: mm
mm
* For reference
0.8
0.95
0.95
No.6260-5/6
3LN01C
Note on usage : Since the 3LN01C is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6260-6/6
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