4N32SR2M [ONSEMI]
6引脚DIP通用光敏达灵顿光电耦合器;
| 型号： | 4N32SR2M |
| 厂家： | 
ONSEMI |
| 描述： | 6引脚DIP通用光敏达灵顿光电耦合器 光电 |
| 文件： | 总12页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
6-Pin DIP General Purpose
Photodarlington Optocoupler
PDIP6
CASE 646BX
6
6
1
1
4N29M, 4N30M, 4N32M,
4N33M, H11B1M, TIL113M
PDIP6
S SUFFIX
Description
CASE 646BY
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M
have a gallium arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
PDIP6
T SUFFIX
Features
6
CASE 646BZ
• High Sensitivity to Low Input Drive Current
• Meets or Exceeds All JEDEC Registered Specifications
• Safety and Regulatory Approvals:
1
♦ UL1577, 4,170 VAC
for 1 Minute
MARKING DIAGRAM
RMS
♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
ON
Applications
XXXXX
VXYYQ
• Low Power Logic Circuits
• Telecommunications Equipment
• Portable Electronics
ON
= Logo
• Solid State Relays
• Interfacing Coupling Systems of Different Potentials and Impedances
XXXXX = Specific Device Code
V
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
X
YY
Q
= One−Digit Year Code
= Digit Work Week
= Assembly Package Code
SCHEMATIC
ANODE
CATHODE
N/C
1
6
BASE
COLLECTOR
EMITTER
2
3
5
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
April, 2022 − Rev. 2
H11B1M/D
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
<150 V
<300 V
I–IV
I–IV
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
V
PR
Input−to−Output Test Voltage, Method A, V
x 1.6 = V , Type and Sample Test
1360
V
peak
IORM
PR
with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1594
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6000
≥7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
mm
°C
External Clearance
≥7
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥10
≥0.5
175
350
800
DTI
T
S
I
Input Current (Note 1)
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
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2
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−40 to +125
−40 to +100
−40 to +125
260 for 10 seconds
270
°C
°C
STG
OPR
T
T
J
°C
T
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate Above 25°C
3.3
EMITTER
I
Continuous Forward Current
80
3
mA
V
F
V
Reverse Voltage
R
(pk)
I
Forward Current – Peak (300 ms, 2% Duty Cycle)
3.0
120
2.0
A
F
P
D
LED Power Dissipation @ T = 25°C
mW
mW/°C
A
Derate Above 25°C
DETECTOR
BV
BV
BV
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Collector Breakdown Voltage
30
30
V
V
CEO
CBO
ECO
5
V
P
Detector Power Dissipation @ T = 25°C
150
2.0
150
mW
mW/°C
mA
D
A
Derate Above 25°C
I
C
Continuous Collector Current
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Device
Min
Typ
Max
Unit
EMITTER
V
Input Forward Voltage (Note 2)
Reverse Leakage Current (Note 2)
Capacitance (Note 2)
I = 10 mA
4NXXM
−
1.2
1.2
1.5
1.5
V
V
F
F
H11B1M,
TIL113M
0.8
I
R
V
R
= 3.0 V
4NXXM
−
−
0.001
0.001
100
10
mA
mA
VR = 6.0 V
H11B1M,
TIL113M
C
V = 0 V, f = 1.0 MHz
F
All
−
150
60
−
−
pF
V
DETECTOR
BV
Collector−Emitter Breakdown Voltage
(Note 2)
I
C
= 1.0 mA, I = 0
4NXXM,
TIL113M
30
CEO
B
H11B1M
All
25
30
60
−
−
V
V
BV
BV
Collector−Base Breakdown Voltage
I
I
= 100 mA, I = 0
100
CBO
C
E
(Note 2)
Emitter−Collector Breakdown Voltage
(Note 2)
= 100 mA, I = 0
4NXXM
5.0
7
10
10
−
−
V
V
ECO
E
B
H11B1M,
TIL113M
I
Collector−Emitter Dark Current (Note 2)
V
CE
= 10 V, Base Open
All
−
1
100
nA
CEO
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data.
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3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Device
Min
Typ
Max
Unit
DC CHARACTERISTICS
I
Collector Output Current
(Note 3) (Note 4) (Note 5)
I = 10 mA, V = 10 V,
4N32M,
4N33M
50 (500)
10 (100)
−
−
−
−
mA (%)
mA (%)
C(CTR)
F
B
CE
I
= 0
4N29M,
4N30M
I = 1 mA, V = 5 V
H11B1M
TIL113M
4NXXM
TIL113M
H11B1M
5 (500)
−
−
−
−
−
−
−
mA (%)
F
CE
I = 10 mA, V = 1 V
30 (300)
mA (%)
F
CE
V
Saturation Voltage (Note 3) (Note 5)
I = 8 mA, I = 2.0 mA
−
−
−
1.0
1.25
1.0
V
V
V
CE (SAT)
F
C
I = 1 mA, I = 1 mA
F
C
AC CHARACTERISTIC
Turn−on Time
t
I = 200 mA, I = 50 mA,
4NXXM,
TIL113M
−
−
−
−
25
−
5.0
−
ms
ms
ms
ON
F
V
C
= 10 V, R = 100 W
CC
L
I = 10 mA, V = 10 V,
H11B1M
F
L
CE
R = 100 W
t
Turn−off Time
I = 200 mA, I = 50mA,
4N32M,
4N33M,
TIL113M
100
OFF
F
CC
C
L
V
= 10 V, R = 100 W
4N29M,
4N30M
−
−
−
−
40
−
ms
ms
I = 10 mA, V = 10 V,
H11B1M
18
F
L
CE
R = 100 W
BW
Bandwidth (Note 6) (Note 7)
30
−
kHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Indicates JEDEC registered data.
4. The current transfer ratio(I /I ) is the ratio of the detector collector current to the LED input current.
C
F
5. Pulse test: pulse width = 300 ms, duty cycle v2.0%.
6. I adjusted to I = 2.0 mA and I = 0.7 mA rms.
F
C
C
7. The frequency at which I is 3 dB down from the 1 kHz value.
C
ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
VISO
Parameter
Input−Output Isolation Voltage
Isolation Capacitance
Test Conditions
t = 1 Minute
Min
4170
−
Typ
−
Max
−
Unit
VAC
RMS
CISO
V
I−O
V
I−O
= 0 V, f = 1 MHz
0.2
−
−
pF
11
RISO
Isolation Resistance
=
500 VDC, T = 25°C
10
−
W
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
TYPICAL PERFORMANCE CURVES
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.6
V
T
A
= 5.0 V
= 25°C
CE
Normalized to
= 10 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
F
T
A
= −55_C
T
A
= 25_C
T
A
= 100_C
1
10
100
0
2
4
6
8
10 12 14 16 18 20
I – LED Forward Current (mA)
F
I – Forward Current (mA)
F
Figure 1. LED Forward Voltage vs. Forward Current
Figure 2. Normalized CTR vs. Forward Current
1.4
1.2
1.0
I
F
= 20 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 5 mA
F
1.0
0.8
0.6
0.4
0.2
I
F
= 10 mA
I
= 10 mA
F
I
F
= 5 mA
I
F
= 20 mA
Normalized to
V
CE
= 5.0 V
I
F
= 10 mA
T
A
= 25_C
20
40
60
80
100
10
100
− Base Resistance (kW)
1000
−60 −40 −20
0
T
A
− Ambient Temperature (5C)
R
BE
Figure 3. Normalized CTR vs. Ambient Temperature
Figure 4. CTR vs. RBE (Unsaturated)
100
10
1.0
0.9
T = 25°C
A
I
= 20 mA
V
= 0.3 V
F
CE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 5 mA
F
1
I
F
= 2.5 mA
I
= 10 mA
F
0.1
I
= 20 mA
F
0.01
0.001
I
F
= 10 mA
I
F
= 5 mA
0.01
0.1
I − Collector Current (mA)
C
1
10
10
100
− Base Resistance (kW)
1000
R
BE
Figure 5. CTR vs. RBE (Saturated)
Figure 6. Collector−Emitter Saturation Voltage
vs. Collector Current
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5
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
TYPICAL PERFORMANCE CURVES (continued)
1000
100
10
5.0
4.5
4.0
3.5
I
V
T
= 10 mA
V
= 10 V
F
CC
= 10 V
I = 2 mA
CC
C
= 25_C
R = 100 W
L
A
T
off
3.0
2.5
2.0
1.5
1.0
0.5
T
f
T
on
1
T
r
0.1
10
100
1000
10000
100000
0.1
1
10
100
R
– Base Resistance (kW)
R – Load Resistor (kW)
BE
Figure 7. Switching Speed vs. Load Resistor
Figure 8. Normalized ton vs. RBE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
T
A
= 10 V
= 25_C
CE
1
V
= 10 V
= 2 mA
0.5
0.4
0.3
0.2
0.1
CC
0.1
I
C
R = 100 W
L
0.01
0.001
10
100
1000
10000
100000
0
20
40
60
80
100
R
– Base Resistance (kW)
T
A
– Ambient Temperature (_C)
BE
Figure 9. Normalized toff vs. RBE
Figure 10. Dark Current vs. Ambient Temperature
SWITCHING TIME TEST CIRCUIT AND WAVEFORMS
WAVE FORMS
TEST CIRCUIT
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
RBE
t
r
tf
toff
ton
Adjust I to produce I = 2 mA
F
C
Figure 11. Switching Time Test Circuit and Waveforms
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6
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
REFLOW PROFILE
260
T
P
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
240
220
200
t
P
T
L
Tsmax
t
L
180
160
140
120
Preheat Area
Tsmin
ts
100
80
60
40
20
0
120
240
360
Time 25°C to Peak
Time (s)
Figure 12. Reflow Profile
REFLOW PROFILE
Profile Feature
Pb−Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60−120 s
S
Ramp−up Rate (t to t )
3°C/s max.
217°C
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60−150 s
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
260°C +0°C / −5°C
30 s
P
Ramp−down Rate (T to T )
6°C/s max.
8 min max.
P
L
Time 25°C to Peak Temperature
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7
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
ORDERING INFORMATION
†
Part Number
4N29M
Package
Packing Method
50 Units / Tube
DIP 6−Pin
4N29SM
SMT 6−Pin (Lead Bend)
SMT 6−Pin (Lead Bend)
50 Units / Tube
1000 / Tape & Reel
50 Units / Tube
50 Units / Tube
1000 / Tape & Reel
50 Units / Tube
4N29SR2M
4N29VM
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
4N29SVM
4N29SR2VM
4N29TVM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M and TIL113M devices.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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SI9137LG
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SI9122E
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