4N35M [ONSEMI]
6 引脚 DIP 封装光电晶体管输出光耦合器;
| 型号： | 4N35M |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 封装光电晶体管输出光耦合器 输出元件 晶体管 光电晶体管 |
| 文件： | 总12页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
6-Pin General Purpose
Phototransistor
Optocouplers
PDIP6
CASE 646BX
6
6
1
1
4N25M, 4N26M, 4N27M,
4N28M, 4N35M, 4N36M,
4N37M
PDIP6
S SUFFIX
CASE 646BY
Description
The general purpose optocouplers consist of a gallium arsenide
infrared emitting diode driving a silicon phototransistor in a standard
plastic 6−pin dual−in−line package.
PDIP6
T SUFFIX
6
CASE 646BZ
1
Features
• Minimum Current Transfer Ratio at I = 10 mA, V = 10 V:
F
CE
♦ 10% for 4N27M and 4N28M
♦ 20% for 4N25M and 4N26M
MARKING DIAGRAM
♦ 100% for 4N35M and 4N36M and 4N37M
ON
• Safety and Regulatory Approvals:
4N25
VXYYQ
♦ UL1577, 4,170 VAC
for 1 Minute
RMS
♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Applications
ON
4N25
V
= Logo
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
= Specific Device Code
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
= One−Digit Year Code
= Digit Work Week
X
YY
Q
= Assembly Package Code
SCHEMATIC
ANODE 1
CATHODE 2
N/C 3
6
5
4
BASE
COLLECTOR
EMITTER
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
September, 2021 − Rev. 2
4N37M/D
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
<150 V
<300 V
I–IV
I–IV
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
V
PR
Input−to−Output Test Voltage, Method A, V
x 1.6 = V , Type and Sample Test
1360
V
peak
IORM
PR
with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V , 100% Production Test
PR
1594
V
peak
IORM
with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6000
≥7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
mm
°C
External Clearance
≥7
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥10
≥0.5
175
350
800
DTI
T
S
I
Input Current (Note 1)
mA
mW
ꢀ
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
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2
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Max
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−40 to +125
−40 to +100
−40 to +125
260 for 10 seconds
270
°C
°C
STG
OPR
T
T
J
°C
T
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate Above 25°C
2.94
EMITTER
I
DC / Average Forward Input Current
Reverse Input Voltage
60
6
mA
V
F
V
R
(pk)
I
F
Forward Current – Peak (300 ꢁ s, 2% Duty Cycle)
3
A
P
D
LED Power Dissipation @ T = 25°C
120
1.41
mW
mW/°C
A
Derate Above 25°C
DETECTOR
V
CEO
V
CBO
V
ECO
Collector−to−Emitter Voltage
Collector−to−Base Voltage
Emitter−to−Collector Voltage
30
70
V
V
7
V
P
D
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
A
Derate Above 25°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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3
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
EMITTER
Input Forward Voltage
I = 10 mA
−
−
1.18
1.50
10
V
V
F
F
I
R
Reverse Leakage Current
V
R
= 6.0 V
0.001
ꢁ A
DETECTOR
BV
BV
BV
Collector−to−Emitter Breakdown Voltage
Collector−to−Base Breakdown Voltage
Emitter−to−Collector Breakdown Voltage
Collector−to−Emitter Dark Current
Collector−to−Base Dark Current
Capacitance
I
I
= 1.0 mA, I = 0
30
70
7
100
120
10
1
−
−
V
V
CEO
CBO
ECO
C
F
= 100 ꢁ A, I = 0
C
F
I = 100 ꢁ A, I = 0
E
−
V
F
I
V
= 10 V, I = 0
−
50
20
−
nA
nA
pF
CEO
CBO
CE
CB
CE
F
I
V
V
= 10 V
−
−
C
= 0 V, f = 1 MHz
−
8
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Device
Min
Typ
Max
Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio,
Collector−to−Emitter
I = 10 mA, V = 10 V
4N35M, 4N36M, 4N37M
4N25M, 4N26M
100
20
−
−
−
−
−
−
−
−
%
F
CE
4N27M, 4N28M
10
I = 10 mA, V = 10 V,
4N35M, 4N36M, 4N37M
40
F
A
CE
T = −55°C
I = 10 mA, V = 10 V,
A
4N35M, 4N36M, 4N37M
40
−
−
−
−
−
F
CE
T = +100°C
V
Collector−to−Emitter
Saturation Voltage
I
= 2 mA, I = 50 mA
4N25M, 4N26M, 4N27M,
4N28M
0.5
0.3
V
CE (SAT)
C
C
F
I
= 0.5 mA, I = 10 mA
4N35M, 4N36M, 4N37M
−
F
AC CHARACTERISTIC
T
Non−Saturated
Turn−on Time
I = 10 mA, V = 10 V,
L
4N25M, 4N26M, 4N27M,
4N28M
−
−
−
−
2
2
2
2
−
10
−
ꢁ s
ꢁ s
ON
F
CC
R = 100 ꢀ (Figure 11)
I
= 2 mA, V = 10 V,
L
4N35M, 4N36M, 4N37M
C
CC
R = 100 ꢀ (Figure 11)
T
OFF
Turn−off Time
I = 10 mA, V = 10 V,
4N25M, 4N26M, 4N27M,
4N28M
F
CC
R = 100 ꢀ (Figure 11)
L
I
= 2 mA, V = 10 V,
L
4N35M, 4N36M, 4N37M
10
C
CC
R = 100 ꢀ (Figure 11)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
VISO
Parameter
Input−Output Isolation Voltage
Isolation Capacitance
Test Conditions
t = 1 Minute
Min
4170
−
Typ
−
Max
−
Unit
VAC
RMS
CISO
V
I−O
V
I−O
= 0 V, f = 1 MHz
0.2
−
−
pF
11
RISO
Isolation Resistance
=
500 VDC, T = 25°C
10
−
ꢀ
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
TYPICAL PERFORMANCE CURVES
1.6
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
V
T
A
= 5.0 V
= 25°C
Normalized to
= 10 mA
CE
I
F
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
= −55_C
A
T
= 25_C
A
T
A
= 100_C
1
10
100
0
2
4
6
8
10
12
14
16
18
20
I – LED Forward Current (mA)
F
I – LED Forward Current (mA)
F
Figure 1. LED Forward Voltage vs. Forward Current
Figure 2. Normalized CTR vs. Forward Current
1.4
1.2
1.0
0.9
I
F
= 20 mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 5 mA
F
I
F
= 10 mA
1.0
0.8
0.6
0.4
0.2
I
F
= 5 mA
I
I
= 10 mA
= 20 mA
F
F
V
= 5.0 V
CE
Normalized to
I
F
= 10 mA
T
A
= 25_C
20
40
60
80
100
−60
−40
−20
0
10
100
1000
T
A
− Ambient Temperature (5C)
R
− Base Resistance (kW)
BE
Figure 3. Normalized CTR vs. Ambient Temperature
Figure 4. CTR vs. RBE (Unsaturated)
100
10
1.0
0.9
T
A
= 25°C
I
F
= 20 mA
V
= 0.3 V
CE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 5 mA
F
1
I
F
= 2.5 mA
I
= 10 mA
F
0.1
I
F
= 20 mA
0.01
0.001
I
F
= 5 mA
I
F
= 10 mA
0.01
0.1
1
10
10
100
1000
R
− Base Resistance (kW)
I − Collector Current (mA)
C
BE
Figure 5. CTR vs. RBE (Saturated)
Figure 6. Collector−Emitter Saturation Voltage vs.
Collector Current
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5
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
TYPICAL PERFORMANCE CURVES (continued)
1000
100
10
5.0
4.5
4.0
3.5
I
V
T
= 10 mA
V
= 10 V
CC
= 2 mA
= 100 ꢀ
L
F
= 10 V
I
C
CC
= 25_C
R
A
T
off
3.0
2.5
2.0
1.5
1.0
0.5
T
f
T
on
1
T
r
0.1
10
100
1000
10000
100000
0.1
1
10
100
R
– Base Resistance (kW)
R – Load Resistor (kW)
BE
Figure 7. Switching Speed vs. Load Resistor
Figure 8. Normalized ton vs. RBE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
T
A
= 10 V
= 25_C
CE
1
V
= 10 V
= 2 mA
= 100 ꢀ
CC
0.5
0.4
0.3
0.2
0.1
0.1
I
C
R
L
0.01
0.001
0
20
40
60
80
100
10
100
1000
10000
100000
R
– Base Resistance (kW)
T
A
– Ambient Temperature (_C)
BE
Figure 9. Normalized toff vs. RBE
Figure 10. Dark Current vs. Ambient Temperature
SWITCHING TIME TEST CIRCUIT AND WAVEFORMS
WAVE FORMS
TEST CIRCUIT
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
RBE
t
r
tf
toff
ton
Adjust I to produce I = 2 mA
F
C
Figure 11. Switching Time Test Circuit and Waveform
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6
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
TL
260
tP
240
220
200
180
160
140
120
100
80
Tsmax
tL
Preheat Area
Tsmin
ts
60
40
20
0
120
240
360
Time 25°C to Peak
Time (s)
Profile Feature
Pb−Free Assembly Profile
150°C
200°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t S) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
Ramp−up Rate (t L to tP
)
Liquidous Temperature (TL)
Time (t L) Maintained Above (TL)
Peak Body Package Temperature
60–150 seconds
260°C +0°C / –5°C
30 seconds
) within 5°C of 260°C
Time (t P
6°C/second max.
Ramp−down Rate (TP to TL)
Time 25°C to Peak Temperature
8 minutes max.
Figure 12. Reflow Profile
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7
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
ORDERING INFORMATION (Note 2)
Part Number
†
Package
DIP 6−Pin
Shipping
4N25M
50 Units / Tube
50 Units / Tube
4N25SM
4N25SR2M
4N25VM
4N25SVM
SMT 6−Pin (Lead Bend)
SMT 6−Pin (Lead Bend)
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
1000 Units / Tape & Reel
50 Units / Tube
SMT 6−Pin (Lead Bend),
DIN EN/IEC60747−5−5 Option
50 Units / Tube
4N25SR2VM
4N25TVM
SMT 6−Pin (Lead Bend),
1000 Units / Tape & Reel
50 Units / Tube
DIN EN/IEC60747−5−5 Option
DIP 6−Pin, 0.4” Lead Spacing,
DIN EN/IEC60747−5−5 Option
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2. The product orderable part number system listed in this table also applies to the 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, and 4N37M
devices.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
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