4Q85-D44H11 [ONSEMI]
Power Bipolar Transistor, NPN, 10 A, 80 V;
| 型号： | 4Q85-D44H11 |
| 厂家： | 
ONSEMI |
| 描述： | Power Bipolar Transistor, NPN, 10 A, 80 V |
| 文件： | 总6页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2009
D44H11TU
NPN Epitaxial Silicon Transistor
•
•
•
Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A
Fast Switching Speeds
Complement to KSE45H
TO-220
1.Base 2.Collector 3.Emitter
1
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter
Value
Units
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
80
5
V
V
Collector Current (DC)
Collector-Current (Pulse)
10
A
ICP
PC
20
A
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
50
W
W
°C
°C
1.67
150
TJ
TSTG
Storage Temperature
- 55 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
BVEBO
ICES
Parameter
Test Condition
Min.
80
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0
V
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IE = 500μA, IC= 0
5
VCE = Rated VCEO, VEB = 0
VEB = 5V, IC = 0
10
μA
μA
IEBO
100
hFE
VCE = 1V, IC = 2A
60
VCE(sat)
VBE(sat)
fT
Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A
1
V
V
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
IC = 8A, IB = 0.8A
1.5
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
50
130
300
500
140
MHz
pF
ns
Cob
tON
V
CC = 20V, IC = 5A
tSTG
Storage Time
ns
IB1 = - IB2 = 0.5A
tF
Fall Time
ns
NOTES:
1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) These ratings are based on a maximum junction temperature of 150degrees C.
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
D44H11TU Rev. B1
1
Typical Performance Characteristics
1000
IC = 10 IB
VCE = 1V
1
VBE(sat)
100
10
1
0.1
VCE(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
f=100MHZ
10
100
1
10μs
44H 1,2
100μs
44H 4,5
44H 7,8
44H 10,11
0.1
10
1
10
100
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Safe Operating Area
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Tc[oC], CASE TEMPERATURE
Figure 5. Power Derating
© 2009 Fairchild Semiconductor Corporation
D44H11TU Rev. B1
www.fairchildsemi.com
2
Mechanical Dimensions
TO-220
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
D44H11TU Rev. B1
www.fairchildsemi.com
3
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The datasheet is for reference information only.
Rev. I39
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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