5HP01C-TB-E [ONSEMI]
TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,70MA I(D),SOT-346;
| 型号： | 5HP01C-TB-E |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,70MA I(D),SOT-346 |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6641B
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
5HP01C
Features
•
Low ON-resistance.
•
High-speed switching.
•
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
--50
±20
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
D
--0.07
--0.28
0.25
150
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10μs, duty cycle≤1%
A
DP
P
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--50
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
D GS
V
μA
μA
V
(BR)DSS
I
V
V
V
V
=--50V, V =0V
GS
--1
DSS
DS
GS
DS
DS
I
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=--10V, I =--100μA
--1
50
--2.5
D
Forward Transfer Admittance
yfs
⏐
=--10V, I =--40mA
70
mS
Ω
⏐
D
R
DS
(on)1
I
I
=--40mA, V =--10V
GS
17
23
22
32
D
D
Static Drain-to-Source On-State Resistance
R
DS
(on)2
=--20mA, V =--4V
GS
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : XC
Ciss
V
V
V
=--10V, f=1MHz
DS
=--10V, f=1MHz
DS
=--10V, f=1MHz
DS
6.2
4.0
1.3
pF
pF
pF
Coss
Crss
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
www.semiconductor-sanyo.com/network
92408 TI IM / 72606 / 33006PE MS IM TB-00002199 / 72600 TS IM TA-1970 No.6641-1/4
5HP01C
Continued from preceding page.
Ratings
typ
Parameter
Symbol
t (on)
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
13
ns
ns
ns
ns
nC
nC
nC
V
d
t
r
10
100
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
150
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
V
V
V
=--10V, V =--10V, I =--70mA
GS
1.32
0.17
0.34
--0.85
DS
DS
DS
D
Qgs
Qgd
=--10V, V =--10V, I =--70mA
GS
D
=--10V, V =--10V, I =--70mA
GS
D
V
I =--70mA, V =0V
--1.2
SD
S
GS
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7013A-013
V
= --25V
DD
V
IN
0V
--10V
I
= --40mA
L
D
2.9
3
0.1
V
R =625Ω
IN
PW=10μs
D.C.≤1%
D
V
OUT
G
5HP01C
1
2
P. G
50Ω
0.95
S
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CP
I
-- V
I
-- V
GS
D
DS
D
--0.14
--0.12
--0.10
--0.08
--0.06
--0.04
--0.07
--0.06
--0.05
--0.04
--0.03
--0.02
V
= --10V
DS
--3.0V
--0.02
0
--0.01
0
V
= --2.5V
GS
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
--1
--2
--3
--4
--5
--6
IT00104
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT00103
DS
R
DS
(on) -- V
R (on) -- I
DS D
GS
100
7
50
45
40
Ta=25°C
V
= --10V
GS
5
35
30
25
20
3
2
--40mA
Ta=75°C
25°C
I
= --20mA
D
--25°C
15
10
10
2
3
5
7
2
3
--2
--3
--4
--5
--6
--7
--8
--9
--10
--0.01
--0.1
Gate-to-Source Voltage, V
-- V
IT00105
Drain Current, I -- A
IT00106
GS
D
No.6641-2/4
5HP01C
R
DS
(on) -- I
R
DS
(on) -- Ta
D
1000
40
35
30
25
20
V
GS
= --4V
7
5
3
2
25°C
100
7
5
15
10
Ta=75°C
--25°C
3
2
5
0
10
--0.01
2
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
--0.1
IT00107
Ambient Temperature, Ta -- ¡C
IT00108
Drain Current, I -- A
D
y
⏐
fs -- I
⏐
D
I
-- V
SD
S
1.0
3
2
V
DS
= --10V
V
=0V
GS
7
5
3
2
--0.1
7
5
0.1
7
5
25°C
3
2
3
2
0.01
--0.01
--0.01
--0.5
2
3
5
7
2
3
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
--0.1
IT00109
Diode Forward Voltage, V -- V
SD
IT00110
Drain Current, I -- A
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
100
1000
f=1MHz
V
V
= --25V
= --10V
7
5
7
5
DD
GS
t
3
2
3
2
f
100
7
5
10
7
5
t (off)
d
Ciss
Coss
3
2
3
2
t (on)
d
Crss
10
7
5
1.0
7
5
t
r
3
2
3
2
1.0
--0.01
0.1
2
3
5
7
0
--5
--10 --15 --20 --25 --30 --35 --40 --45 --50
IT00112
--0.1
IT00111
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
D
V
-- Qg
P
-- Ta
GS
D
--10
0.30
0.25
0.20
0.15
0.10
V
= --10V
= --0.07A
DS
--9
--8
--7
I
D
--6
--5
--4
--3
--2
0.05
0
--1
0
0
20
40
60
80
100
120
140
160
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT00113
Total Gate Charge, Qg -- nC
Ambient Temperature, Ta -- °C
IT02382
No.6641-3/4
5HP01C
Note on usage : Since the 5HP01C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2008. Specifications and information herein are subject
to change without notice.
PS No.6641-4/4
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