5LP01C-TB-H [ONSEMI]
小信号 MOSFET,-50V,-0.07A,23Ω,单 P 沟道,CP;型号: | 5LP01C-TB-H |
厂家: | ONSEMI |
描述: | 小信号 MOSFET,-50V,-0.07A,23Ω,单 P 沟道,CP |
文件: | 总6页 (文件大小:261K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN6619C
5LP01C
P-Channel Small Signal MOSFET
http://onsemi.com
–
–
Ω
50V, 0.07A, 23 , Single CP
Features
•
Low ON-resistance
•
•
•
Ultrahigh-speed switching
1.5V drive
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--50
Unit
V
V
DSS
V
±10
V
GSS
I
--0.07
--0.28
0.25
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
P
W
°C
°C
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Ordering & Package Information
Device
Package
Shipping
memo
7013A-013
CP
3,000
pcs./reel
5LP01C-TB-E
SC-59, TO-236,
SOT-23, TO-236AB
Pb-Free
2.9
0.1
5LP01C-TB-E
5LP01C-TB-H
CP
Pb-Free
and
Halogen Free
3
3,000
pcs./reel
5LP01C-TB-H
SC-59, TO-236,
SOT-23, TO-236AB
Packing Type: TB
Marking
1
2
0.95
0.4
XB
1 : Gate
2 : Source
3 : Drain
TB
CP
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
72413 TKIM TC-00002969/62712 TKIM/33006PE MSIM TB-00002201/92500 TS IM TA-2036 No.6619-1/6
5LP01C
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--50
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
= --1mA, V =0V
(BR)DSS
D GS
I
V
V
= --50V, V =0V
--1
A
A
μ
DSS
DS
GS
I
=±8V, V =0V
DS
±10
μ
GSS
GS
V
(off)
|
V
= --10V, I = --100
A
μ
--0.4
70
--1.4
V
GS
yfs
DS D
Forward Transfer Admittance
V
= --10V, I = --40mA
D
100
18
mS
Ω
|
DS
R
R
R
(on)1
(on)2
(on)3
I
= --40mA, V = --4V
D GS
23
28
60
DS
DS
DS
Static Drain to Source On-State Resistance
I
D
= --20mA, V = --2.5V
GS
20
Ω
I
D
= --5mA, V = --1.5V
GS
30
Ω
Input Capacitance
Ciss
7.4
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
= --10V, f=1MHz
4.2
DS
1.3
t
t
t
t
(on)
20
d
r
35
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
160
150
1.40
0.16
0.23
--0.85
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
= --10V, V = --10V, I = --70mA
GS
D
V
SD
I = --70mA, V =0V
S GS
--1.2
Switching Time Test Circuit
V
= --25V
DD
V
IN
0V
--4V
I
= --40mA
L
D
R =625Ω
V
D
V
IN
OUT
PW=10μs
D.C.≤1%
G
5LP01C
P.G
50Ω
S
No.6619-2/6
5LP01C
I
D
-- V
I
-- V
DS
GS
D
--0.14
--0.07
--0.06
--0.05
V
= --10V
DS
--0.12
--0.10
--0.04
--0.08
--0.06
--0.04
--0.03
--0.02
V
= --1.5V
GS
--0.01
0
--0.02
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
IT00090
Gate to Source Voltage, V
GS
-- V
IT00091
Drain to Source Voltage, V
-- V
DS
R
(on) -- V
R
(on) -- I
DS D
DS
GS
40
35
100
V
= --4V
Ta=25°C
GS
7
5
30
25
3
2
I = --40mA
--20mA
D
Ta=75°C
25°C
20
15
10
--25°C
10
--0.01
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
2
3
5
7
2
3
--0.1
Gate to Source Voltage, V
GS
-- V
IT00092
Drain Current, I -- A
IT00093
D
R
DS
(on) -- I
R
(on) -- I
D
DS
D
100
1000
V
= --2.5V
V
= --1.5V
GS
GS
7
5
7
5
3
2
Ta=75°C
25°C
100
7
3
2
--25°C
25°C
5
3
2
Ta=75°C
--25°C
10
--0.001
10
--0.01
2
3
5
7
2
3
2
3
5
7
2
3
--0.1
--0.01
IT00095
Drain Current, I -- A
IT00094
Drain Current, I -- A
D
D
R
DS
(on) -- Ta
| yfs | -- I
D
40
1.0
V
= --10V
DS
7
5
35
3
2
30
0.1
25
20
7
5
3
2
15
10
0.01
--0.01
2
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
--0.1
Ambient Temperature, Ta -- °C
Drain Current, I -- A
IT00096
IT00097
D
No.6619-3/6
5LP01C
I
S
-- V
SD
SW Time -- I
D
1000
3
2
V
V
= --25V
= --4V
V
=0V
DD
GS
GS
7
5
3
2
t
f
--0.1
t (off)
d
7
5
100
7
5
3
2
t
r
3
2
t (on)
d
--0.01
--0.5
10
--0.01
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
IT00098
2
3
5
7
--0.1
IT00099
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
V
-- Qg
Ciss, Coss, Crss -- V
GS
DS
--10
100
V
= --10V
f=1MHz
7
5
DS
--9
--8
--7
I = --70mA
D
3
2
10
7
5
Ciss
--6
--5
--4
--3
--2
Coss
3
2
1.0
7
5
Crss
3
2
--1
0
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
--5
--10 --15 --20 --25 --30 --35
--40 --45
--50
Drain to Source Voltage, V
DS
-- V
Total Gate Charge, Qg -- nC
IT00100
IT00101
P
-- Ta
D
0.30
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT02382
No.6619-4/6
5LP01C
Outline Drawing
Land Pattern Example
5LP01C-TB-E, 5LP01C-TB-H
Mass (g) Unit
Unit: mm
0.013
mm
* For reference
0.8
0.95
0.95
No.6619-5/6
5LP01C
Note on usage : Since the 5LP01C is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6619-6/6
相关型号:
5LP01M-TL-E
Small Signal MOSFET -50V -0.07A 23 Ohm Single P-Channel MCP3, SC-70 / MCP3, 3000-REEL
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