74LVTH125MTC [ONSEMI]
带 3 态输出的低压四路缓冲器;
| 型号： | 74LVTH125MTC |
| 厂家： | 
ONSEMI |
| 描述： | 带 3 态输出的低压四路缓冲器 驱动 信息通信管理 光电二极管 逻辑集成电路 |
| 文件： | 总9页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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January 2008
74LVTH125
Low Voltage Quad Buffer with 3-STATE Outputs
Features
General Description
■ Input and output interface capability to systems at
The LVTH125 contains four independent non-inverting
buffers with 3-STATE outputs.
5V V
CC
■ Bushold data inputs eliminate the need for external
These buffers are designed for low-voltage (3.3V) V
CC
pull-up resistors to hold unused inputs
applications, but with the capability to provide a TTL
interface to a 5V environment. The LVTH125 is fabri-
cated with an advanced BiCMOS technology to achieve
high speed operation similar to 5V ABT while maintain-
ing a low power dissipation.
■ Live insertion/extraction permitted
■ Power Up/Down high impedance provides glitch-free
bus loading
■ Outputs source/sink –32mA/+64mA
■ Functionally compatible with the 74 series 125
■ Latch-up performance exceeds 500mA
■ ESD performance:
– Human-body model > 2000V
– Machine model > 200V
– Charged-device model > 1000V
Ordering Information
Package
Order Number
74LVTH125M
Number
Package Description
M14A
14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" Narrow
14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide
74LVTH125SJ
74LVTH125MTC
M14D
MTC14
14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm
Wide
Device also available in Tape and Reel. Specify by appending suffix letter “X” to the ordering number.
All packages are lead free per JEDEC: J-STD-020B standard.
©1998 Fairchild Semiconductor Corporation
74LVTH125 Rev. 1.4.0
www.fairchildsemi.com
Connection Diagram
Logic Symbol
IEEE/IEC
Pin Description
Truth Table
Pin Names
Description
Inputs
Output
A , B
Inputs
n
n
O
3-STATE Outputs
A
B
O
n
n
n
n
L
L
L
L
H
Z
H
X
H
H = HIGH Voltage Level
L = LOW Voltage Level
X = Immaterial
Z = HIGH Impedance
©1998 Fairchild Semiconductor Corporation
74LVTH125 Rev. 1.4.0
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Rating
V
Supply Voltage
–0.5V to +4.6V
CC
V
DC Input Voltage
DC Output Voltage
Output in 3-STATE
–0.5V to +7.0V
I
V
O
–0.5V to +7.0V
–0.5V to +7.0V
–50mA
(1)
Output in HIGH or LOW State
I
DC Input Diode Current, V < GND
I
IK
I
DC Output Diode Current, V < GND
–50mA
OK
O
I
DC Output Current, V > V
O
O
CC
Output at HIGH State
Output at LOW State
64mA
128mA
I
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature
64mA
CC
I
128mA
GND
T
–65°C to +150°C
STG
Note:
1. I Absolute Maximum Rating must be observed.
O
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Parameter
Min
2.7
0
Max
3.6
5.5
–32
64
Units
V
V
Supply Voltage
Input Voltage
CC
V
V
I
I
HIGH-Level Output Current
LOW-Level Output Current
Free-Air Operating Temperature
mA
mA
°C
OH
I
OL
T
–40
0
85
A
∆t / ∆V
Input Edge Rate, V = 0.8V–2.0V, V = 3.0V
10
ns/V
IN
CC
©1998 Fairchild Semiconductor Corporation
74LVTH125 Rev. 1.4.0
www.fairchildsemi.com
3
DC Electrical Characteristics
TA = –40°C to +85°C
Min.
Typ.(2) Max.
Symbol
Parameter
Input Clamp Diode Voltage
Input HIGH Voltage
VCC (V)
2.7
Conditions
Units
V
V
I = –18mA
–1.2
0.8
V
V
V
V
IK
IH
I
2.7–3.6
2.7–3.6
2.7–3.6
2.7
V
V
≤ 0.1V or
2.0
O
≥ V – 0.1V
V
Input LOW Voltage
O
CC
IL
V
Output HIGH Voltage
I
I
I
I
I
I
I
I
= –100µA
= –8mA
= –32mA
= 100µA
= 24mA
= 16mA
= 32mA
= 64mA
V
– 0.2
CC
OH
OH
OH
OH
OL
OL
OL
OL
OL
2.4
2.0
3.0
V
Output LOW Voltage
2.7
0.2
0.5
V
OL
3.0
0.4
0.5
0.55
I
Bushold Input Minimum Drive
3.0
3.0
V = 0.8V
75
–75
µA
µA
µA
I(HOLD)
I
V = 2.0V
I
(3)
I
Bushold Input Over-Drive
Current to Change State
500
I(OD)
(4)
–500
I
Input Current
Control Pins
Data Pins
3.6
3.6
3.6
V = 5.5V
10
1
I
I
V = 0V or V
I
CC
V = 0V
–5
1
I
V = V
I
CC
I
Power Off Leakage Current
0
0V ≤ V or V ≤ 5.5V
100
100
µA
µA
OFF
I
O
I
Power up/down 3-STATE
Output Current
0–1.5
V = 0.5V to 3.0V,
O
PU/PD
V = GND or V
I
CC
I
3-STATE Output Leakage Current
3-STATE Output Leakage Current
3-STATE Output Leakage Current
Power Supply Current
3.6
3.6
3.6
3.6
3.6
3.6
3.6
V
V
V
= 0.5V
= 3.0V
–5
5
µA
µA
OZL
O
I
OZH
O
I
+
< V ≤ 5.5V
10
µA
OZH
CC
O
I
Outputs HIGH
Outputs LOW
0.19
5
mA
mA
mA
mA
CCH
I
Power Supply Current
CCL
I
Power Supply Current
Outputs Disabled
0.19
0.19
CCZ
I
+
Power Supply Current
V
≤ V ≤ 5.5V,
CC O
CCZ
Outputs Disabled
One Input at V – 0.6V,
∆I
Increase in Power Supply
Current
3.6
0.2
mA
CC
CC
(5)
Other Inputs at V or
CC
GND
Notes:
2. All typical values are at V = 3.3V, T = 25°C.
CC
A
3. An external driver must source at least the specified current to switch from LOW-to-HIGH.
4. An external driver must sink at least the specified current to switch from HIGH-to-LOW.
5. This is the increase in supply current for each input that is at the specified voltage level rather than V or GND.
CC
©1998 Fairchild Semiconductor Corporation
74LVTH125 Rev. 1.4.0
www.fairchildsemi.com
4
Dynamic Switching Characteristics(6)
Conditions
T = 25°C
A
Symbol
Parameter
V
(V) C = 50 pF, R = 500Ω Min.
Typ.
Max.
Units
CC
L
L
(7)
V
Quiet Output Maximum
3.3
0.8
V
OLP
Dynamic V
OL
(7)
V
Quiet Output Minimum
Dynamic V
3.3
–0.8
V
OLV
OL
Notes:
6. Characterized in SOIC package. Guaranteed parameter, but not tested.
7. Max number of outputs defined as (n). n–1 data inputs are driven 0V to 3V. Output under test held LOW.
AC Electrical Characteristics
T = –40°C to +85°C,
A
C = 50pF, R = 500Ω
L
L
V
Min.
1.0
= 3.3V 0.3V
V
= 2.7V
CC
CC
(8)
Symbol
Parameter
Typ.
Max.
3.5
3.9
4.0
4.0
4.5
4.5
1.0
Min.
1.0
1.0
1.0
1.1
1.5
1.3
Max.
Units
t
t
Propagation Delay, Data to Output
4.5
4.9
5.5
5.4
5.7
4.0
1.0
ns
PLH
PHL
PZH
1.0
t
Output Enable Time
Output Disable Time
1.0
ns
ns
ns
t
1.1
PZL
PHZ
t
1.5
t
1.3
PLZ
(9)
t
, t
Output to Output Skew
OSHL OSLH
Notes:
8. All typical values are at V = 3.3V, T = 25°C.
CC
A
9. Skew is defined as the absolute value of the difference between the actual propagation delay for any two
separate outputs of the same device. The specification applies to any outputs switching in the same direction,
either HIGH-to-LOW (t
) or LOW-to-HIGH (t
).
OSHL
OSLH
(10)
Capacitance
Symbol
Parameter
Conditions
Typical
Units
pF
C
Input Capacitance
Output Capacitance
V
V
= 0V, V = 0V or V
CC
4
8
IN
CC
I
C
= 3.0V, V = 0V or V
CC
pF
OUT
CC
O
Note:
10. Capacitance is measured at frequency f = 1MHz, per MIL-STD-883B, Method 3012.
©1998 Fairchild Semiconductor Corporation
74LVTH125 Rev. 1.4.0
www.fairchildsemi.com
5
0.65
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ALL LEAD TIPS
1
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SEE DETAIL A
1.2 MAX
+0.15
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0.90
0.20
0.09
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FRONT VIEW
0.09 MIN
NOTES:
GAGE PLANE
A. CONFORMS TO JEDEC REGISTRATION MO-153,
VARIATION AB, REF NOTE 6
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS
D. DIMENSIONING AND TOLERANCES PER ANSI
Y14.5M, 2009.
0.25
0.09 MIN
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8.75
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0.65
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14
8
14
8
B
4.00
3.80
5.60
6.00
1.70
1
7
PIN #1
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1
7
1.27
0.51
0.35
1.27
(0.33)
M
0.25
C B A
LAND PATTERN RECOMMENDATION
TOP VIEW
1.75 MAX
A
0.25
0.19
C
0.10 C
NOTES:
1.50
1.25
0.25
0.10
SIDE VIEW
FRONT VIEW
A. CONFORMS TO JEDEC MS-012,
VARIATION AB, ISSUE C
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS
0.50
0.25
x 45
R0.10
GAGE
PLANE
D. LAND PATTERN STANDARD:
SOIC127P600X145-14M
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D. DRAWING FILENAME: MKT-M14Arev14
0.36
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(1.04)
DETAIL A
SCALE 16 : 1
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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