98AON13451G [ONSEMI]
6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 V Peak);
| 型号： | 98AON13451G |
| 厂家： | 
ONSEMI |
| 描述： | 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 V Peak) |
| 文件： | 总13页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6-Pin DIP Zero-Cross Triac
Driver Optocoupler
(800 V Peak)
MOC3081M, MOC3082M,
MOC3083M
www.onsemi.com
Description
The MOC3081M, MOC3082M and MOC3083M devices consist of
a GaAs infrared emitting diode optically coupled to a monolithic
silicon detector performing the function of a zero voltage crossing
bilateral triac driver.
They are designed for use with a discrete power triac in the interface
of logic systems to equipment powered from 240 VAC lines, such as
solid−state relays, industrial controls, motors, solenoids and consumer
appliances, etc.
PDIP6 8.51x6.35, 2.54P
CASE 646BY
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
Features
• Simplifies Logic Control of 240 VAC Power
• Zero Voltage Crossing to Minimize Conducted and Radiated Line
Noise
• 800 V Peak Blocking Voltage
• Superior Static dv/dt
PDIP6 8.51x6.35, 2.54P
CASE 646BX
♦ 1500 V/ms Typical, 600 V/ms Guaranteed
• Safety and Regulatory Approvals
♦ UL1577, 4,170 VAC
for 1 Minute
RMS
♦ DIN EN/IEC60747−5−5
• These are Pb−Free Devices
ANODE 1
6 MAIN TERM.
Applications
• Solenoid/Valve Controls
• Lighting Controls
• Static Power Switches
• AC Motor Starters
• Temperature Controls
• E.M. Contactors
CATHODE
N/C
NC*
2
3
5
4
ZERO
CROSSING
CIRCUIT
MAIN TERM.
• AC Motor Drives
• Solid State Relays
*DO NOT CONNECT
(TRIAC SUBSTRATE)
Figure 1. Schematic
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
September, 2019 − Rev. 1
MOC3083M/D
MOC3081M, MOC3082M, MOC3083M
SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 VRMS
< 300 VRMS
I–IV
I–IV
Installation Classifications per DIN VDE 0110/1.89 Table 1, For
Rated Mains Voltage
Climatic Classification
40/85/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
VPR
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC
1360
1594
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 s, Partial Discharge < 5 pC
Vpeak
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
850
6000
≥ 7
VIORM
VIOTM
Vpeak
Vpeak
mm
mm
mm
mm
W
External Creepage
≥ 7
External Clearance
≥ 10
≥ 0.5
> 109
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Insulation Resistance at TS, VIO = 500 V
DTI
RIO
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2
MOC3081M, MOC3082M, MOC3083M
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
A
Symbol
Parameters
Value
Unit
Total Device
Storage Temperature
Operating Temperature
−40 to 150
°C
TSTG
−40 to 85
−40 to 100
°C
°C
°C
TOPR
TJ
Junction Temperature Range
Lead Solder Temperature
TSOL
260 for 10 seconds
Total Device Power Dissipation at 25°C Ambient
Derate Above 25°C
250
mW
PD
2.94
mW/°C
Emitter
IF
Continuous Forward Current
Reverse Voltage
60
6
mA
V
VR
Total Power Dissipation at 25°C Ambient
Derate Above 25°C
120
mW
PD
1.41
mW/°C
Detector
VDRM
Off−State Output Terminal Voltage
V
A
800
1
ITSM
Peak Non−Repetitive Surge Current
(Single Cycle 60 Hz Sine Wave)
Total Power Dissipation at 25°C Ambient
Derate Above 25°C
150
mW
PD
1.76
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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3
MOC3081M, MOC3082M, MOC3083M
ELECTRICAL CHARACTERISTICS
T = 25°C unless otherwise specified
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Emitter
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
VF
Input Forward Voltage
IF = 30 mA
1.3
1.5
V
mA
IR
Reverse Leakage Current
VR = 6 V
0.005
100
Detector
VDRM = 800 V, IF = 0(1)
IF = 0 (Figure 10) (2)
Peak Blocking Current, Either Direction
Critical Rate of Rise of Off−State Voltage
IDRM1
dv/dt
10
500
nA
600
V/ms
1500
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load−driving thyristor(s) only.
TRANSFER CHARACTERISTICS
Symbol
DC Characteristics
Test Conditions
Device
MOC3081M
MOC3082M
MOC3083M
All
Min.
Typ.
Max.
15
Unit
IFT
LED Trigger Current (Rated IFT
)
Main Terminal
mA
Voltage = 3 V(3)
10
5
VTM
Peak On−State Voltage,
Either Direction
ITM = 100 mA peak,
IF = rated IFT
1.8
V
3.0
Holding Current, Either Direction
mA
IH
All
500
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT
(15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute maximum IF (60 mA).
ZERO CROSSING CHARACTERISTICS
Symbol
Parameters
Test Conditions
IF = Rated IFT
Min.
Typ.
Max.
Unit
VINH
Inhibit Voltage (MT1−MT2 voltage above which
device will not trigger)
12
20
V
IDRM2
Leakage in Inhibited State
IF = Rated IFT, V
off−state
= 800 V,
2
mA
DRM
ISOLATION CHARACTERISTICS
Symbol
VISO
Parameters
Test Conditions
f = 60 Hz, t = 1 Minute
VI−O = 500 VDC
Min.
Typ.
Max.
Unit
VACRMS
W
(4)
4170
Isolation Voltage
11
RISO
Isolation Resistance
Isolation Capacitance
10
CISO
V = 0 V, f = 1 MHz
0.2
pF
4. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
ISO
common.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
MOC3081M, MOC3082M, MOC3083M
TYPICAL PERFORMANCE CURVES
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.6
1.5
V
= 3 V
TM
NORMALIZED TO T = 25_C
A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
T
= −40_C
= 25_C
A
T
A
T
= 85_C
A
0.1
1
10
100
−40
−20
0
20
40
60
80
100
I , LED FORWARD CURRENT (mA)
F
T , AMBIENT TEMPERATURE (_C)
A
Figure 2. LED Forward Voltage vs. Forward
Current
Figure 3. Trigger Current vs. Temperature
16
10000
T
= 25_C
A
NORMALIZED TO PW >> 100 ms
IN
14
12
10
8
1000
100
10
6
4
1
2
0.1
−40
0
−20
0
20
40
60
80
100
1
10
100
T
, AMBIENT TEMPERATURE (_C)
PW , LED TRIGGER PULSE WIDTH (ms)
A
IN
Figure 4. LED Current Required to Trigger vs. LED
Pulse Width
Figure 5. Leakage Current, IDRM vs. Temperature
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5
MOC3081M, MOC3082M, MOC3083M
TYPICAL PERFORMANCE CURVES (Continued)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
800
I
= RATED I
FT
F
T
= 25_C
A
NORMALIZED TO T = 25_C
A
600
400
200
0
−200
−400
−600
−800
−40
−20
0
20
40
60
80
100
−4
−3
−2
−1
0
1
2
3
4
T , AMBIENT TEMPERATURE (_C)
A
V
, ON−STATE VOLTAGE (VOLTS)
TM
Figure 6. IDRM2, Leakage in Inhibit State vs.
Temperature
Figure 7. On−State Characteristics
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
NORMALIZED TO T = 25_C
A
−40
−20
0
20
40
60
80
100
−40
−20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (_C)
T , AMBIENT TEMPERATURE (_C)
A
A
Figure 8. IH, Holding Current vs. Temperature
Figure 9. Inhibit Voltage vs. Temperature
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6
MOC3081M, MOC3082M, MOC3083M
1. The mercury wetted relay provides a high speed
repeated pulse to the D.U.T.
800 V
Vdc
RTEST
2. 100x scope probes are used, to allow high speeds and
voltages.
10 kW
CTEST
3. The worst−case condition for static dv/dt is established
by triggering the D.U.T. with a normal LED input current,
PULSE
INPUT
MERCURY
WETTED
RELAY
then removing the current. The variable R
allows
TEST
the dv/dt to be gradually increased until the D.U.T.
continues to trigger in response to the applied voltage
pulse, even after the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops
D.U.T.
PROBE
t
triggering.
is measured at this point and recorded.
RC
Figure 10. Static dv/dt Test Circuit
V
= 800 V
max
APPLIED VOLTAGE
WAVEFORM
504 V
0.63 V
t
504
max
RC
dv/dt =
=
t
0 VOLTS
RC
t
RC
Figure 11. Static dv/dt Test Waveform
Typical circuit for use when hot line switching is required.
In this circuit the “hot” side of the line is switched and the
load connected to the cold or neutral side. The load may be
connected to either the neutral or hot line.
MOC3082M, and 5 mA for the MOC3083M. The 39 W
resistor and 0.01 mF capacitor are for snubbing of the triac
and may or may not be necessary depending upon the
particular triac and load use.
R
IN
is calculated so that I is equal to the rated I of the
F FT
part, 15 mA for the MOC3081M, 10 mA for the
Rin
360 W
1
2
6
5
HOT
VCC
MOC3081M
MOC3082M
MOC3083M
FKPF12N80
39*
3
4
240 VAC
0.01
330 W
LOAD
NEUTRAL
* For highly inductive loads (power factor < 0.5), change this value to 360 W.
Figure 12. Hot−Line Switching Application Circuit
240 VAC
R1
D1
1
2
6
5
VCC
Rin
MOC3081M
MOC3082M
MOC3083M
SCR
SCR
360 W
3
4
R2
D2
LOAD
Figure 13. Inverse−Parallel SCR Driver Circuit
Suggested method of firing two, back−to−back SCR’s
with an ON Semiconductor triac driver. Diodes can be
1N4001; resistors, R1 and R2, are optional 330 W.
NOTE: This optoisolator should not be used to drive a
load directly. It is intended to be a trigger device
only.
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7
MOC3081M, MOC3082M, MOC3083M
Reflow Profile
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Figure 14. Reflow Profile
Profile Freature
Pb−Free Assembly Profile
150°C
Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
Time (tS) from (Tsmin to Tsmax)
Ramp−up Rate (TL to TP)
200°C
60 seconds to 120 seconds
3°C/second maximum
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp−down Rate (TP to TL)
Time 25°C to Peak Temperature
60 seconds to 150 seconds
260°C +0°C / –5°C
30 seconds
6°C/second maximum
8 minutes maximum
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8
MOC3081M, MOC3082M, MOC3083M
ORDERING INFORMATION
Part Number
Package
Shipping
50 Units / Tube
MOC3081M
DIP 6−Pin
MOC3081SM
SMT 6−Pin (Lead Bend)
50 Units / Tube
MOC3081SR2M
MOC3081VM
SMT 6−Pin (Lead Bend)
1000 Units / Tape & Reel
50 Units / Tube
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
MOC3081SVM
MOC3081SR2VM
MOC3081TVM
50 Units / Tube
1000 Units / Tape & Reel
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube
NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M,
MOC3021M, MOC3022M, and MOC3083M product families.
MARKING INFORMATION
1
ON
2
MOC3081
6
V
X YY Q
5
3
4
Figure 15. Top Mark
Top Mark Definitions
1
2
3
4
5
6
ON Semiconductor Logo
Device Number
DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option)
One−Digit Year Code, e.g., ‘5’
Two−Digit Work Week, Ranging from ‘01’ to ‘53’
Assembly Package Code
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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