ADP3808A [ONSEMI]

High Efficiency Switch Mode Li-Ion Battery Charger; 高效率开关模式锂离子电池充电器
ADP3808A
型号: ADP3808A
厂家: ONSEMI    ONSEMI
描述:

High Efficiency Switch Mode Li-Ion Battery Charger
高效率开关模式锂离子电池充电器

电池 开关
文件: 总15页 (文件大小:205K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ADP3808A  
High Efficiency Switch  
Mode Li-Ion Battery  
Charger  
The ADP3808A is a complete Li-Ion battery charging controller for  
3or 4cell battery packs. The device combines accurate final battery  
charge voltage control with constant current control to simplify the  
implementation of constant-current, constant-voltage (CCCV)  
chargers.  
The final battery charge voltage is programmable between 4.0 V to  
4.5 V per cell, allowing the charging of various cell types. The charge  
current is programmable over a wide range from trickle charging to  
full charging. The system current sense amplifier includes an ac  
adapter detection output to signal that the adapter is connected. The  
bootstrapped synchronous driver controls two Nchannel MOSFET  
transistors for high efficiency charging at a low system cost.  
The ADP3808A is specified over the extended commercial  
temperature range of 0°C to 100°C and is available in a 24lead  
LFCSP package.  
http://onsemi.com  
MARKING  
DIAGRAM  
LFCSP24  
CASE 932AG  
ADP  
3808A  
JPZ  
#YYWW  
xx  
#
= Device Code  
= PbFree Package  
Features  
Selectable 3Cell or 4Cell Operation  
Adjustable 4.0 V to 4.5 V Per Cell  
High End-of-Charge Voltage Accuracy  
YYWW = Date Code  
PIN ASSIGNMENT  
0.4% @ 25°C  
0.6% @ 5°C to 55°C  
0.8% @ 0°C to 100°C  
Programmable Charge Current, Including Trickle Charge  
Bootstrapped Synchronous Drive for External NChannel MOSFETs  
Programmable Oscillator Frequency  
ISYS  
LIMSET  
LIMIT  
1
2
3
4
5
6
18 DRVREG  
17 DRVL  
16 PGND  
15 CSP  
ADP3808A  
TOP VIEW  
EXTPWR  
RT  
(Not to Scale)  
This is a PbFree Device  
14 CSM  
REFIN  
13 CSADJ  
Applications  
Portable Computers  
Portable Equipment  
ORDERING INFORMATION  
Device*  
Package  
Shipping  
ADP3808AJCPZRL LFCSP24 5000/Tape & Reel  
*The “Z’ suffix indicates PbFree package.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
January, 2009 Rev. 1  
ADP3808A/D  
ADP3808A  
VCC  
22  
LOWSIDE  
DRIVE  
REGULATOR  
UVLO  
AND BIAS  
8
EN  
DRVREG  
BST  
19  
20  
21  
EN  
IN  
DRVH  
SW  
REFERENCE  
OSCILLATOR  
DRVREG  
10  
AGND  
CONTROL  
LOGIC  
18 DRVREG  
17  
DRVLSD  
DRVL  
5
RT  
CELLSEL  
BAT  
16  
PGND  
12  
11  
3/4−  
CELL  
VTH  
CSP  
CSM  
15  
14  
6
REFIN  
BATTERY  
VOLTAGE  
ADJUST  
g
m
7
9
BATADJ  
COMP  
g
m
CHARGE  
CURRENT  
SETPOINT  
23  
24  
SYSM  
SYSP  
13  
4
CSADJ  
CMP  
1V  
EXTPWR  
CMP  
SYS+  
CMP  
18.25V  
1
2
3
ISYS LIMSET  
LIMIT  
Figure 1. Functional Block Diagram  
http://onsemi.com  
2
ADP3808A  
ABSOLUTE MAXIMUM RATINGS  
Description  
Symbol  
Value  
0.3 to +25  
Unit  
V
Supply Voltage Input  
VCC  
Power Ground  
PGND  
0.3 to +0.3  
V
Bootstrap Supply Voltage Input  
BST to Switching Node  
Switching Node  
BST  
BST to SW  
SW  
0.3 to +30  
V
0.3 to +6  
V
4 to +25  
V
HighSide Driver Output  
LowSide Driver Output  
DRVH  
SW 0.3 to BST + 0.3  
PGND 0.3 to DRVREG + 0.3  
V
DRVL  
V
System Sense Inputs to Analog Ground  
SYSP, SYSM to AGND  
V
DC  
25 to +30  
25 to +35  
< 50 msec  
Battery Input, Current Sense Inputs to Analog  
Ground  
BAT, CSP, CSM to AGND  
SYSP to SYSM  
0.3 to V + 0.3  
V
V
V
V
CC  
Positive System Sense Input to Negative System  
Sense Input  
5 to +5  
5 to +5  
Positive Current Sense Input to Negative Current  
Sense Input  
CSP to CSM  
All Other Inputs and Outputs  
DRVREG, CSADJ, EN,  
CELLSEL, REFIN, BATADJ,  
LIMSET, LIMIT, ISYS, EXTPWR  
0.3 to +6  
2-Layer Board  
4-Layer Board  
q
125  
83  
°C/W  
JA  
Operating Ambient Temperature Range  
Junction Temperature Range  
T
0 to 100  
0 to 150  
°C  
°C  
°C  
°C  
A
T
J
Storage Temperature Range  
T
S
65 to +150  
Lead Temperature  
Soldering (10 sec)  
Vapor Phase (60 sec)  
Infrared (15 sec)  
300  
215  
220  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.  
http://onsemi.com  
3
ADP3808A  
PIN DESCRIPTION  
Pin No.  
Symbol  
Description  
1
2
3
ISYS  
LIMSET  
LIMIT  
Output for System Current Sense Amplifier.  
System Current Limit Set Point Input.  
System Current Limit Output. This is an open-drain pin and requires a pull-up resistor to a maximum  
of 6.0 V.  
4
5
EXTPWR  
RT  
External Adapter Sense Open-Drain Output. This pin pulls low when the ac adapter voltage is  
present. A pullup resistor is required to a maximum of 6 V.  
Frequency Setting Resistor Input. An external resistor connected between this pin and AGND sets  
the oscillator frequency of the device.  
6
7
REFIN  
Reference Input for BATADJ and CSADJ.  
BATADJ  
Battery Voltage Adjust Input. This pin uses an analog voltage referenced to REFIN to program  
voltage from 4.0 V to 4.5 V per cell.  
8
EN  
Charger Enable Input. Pulling this pin to AGND disables the DRVH and DRVL outputs and puts the  
circuitry powered by V into a low power state. The system amplifier and EXTPWR are still active.  
CC  
9
COMP  
AGND  
Output of Error Amplifiers and Compensation Point.  
Analog Ground. Reference point for the battery sense and all analog functions.  
Battery Sense Input.  
10  
11  
12  
BAT  
CELLSEL  
Battery Cell Selection Input. Pulling this pin high selects 3-cell operation; pulling it low selects 4-cell  
operation.  
13  
14  
15  
CSADJ  
CSM  
Charge Current Programming Input. This pin uses an analog voltage referenced to REFIN to program  
the battery charge current. (V  
V  
) = 96 mV x CSADJ/REFIN.  
CSP  
CSM  
Negative Current Sense Input. This pin connects to the battery side of the battery current sense  
resistor.  
CSP  
Positive Current Sense Input. This pin connects to the inductor side of the battery current sense  
resistor.  
16  
17  
18  
PGND  
DRVL  
Power Ground. This pin should closely connect to the source of the lower MOSFET.  
Synchronous Rectifier Drive. Output drive for the lower MOSFET.  
DRVREG  
Driver Supply Output. A bypass capacitor should be connected from this pin to PGND to provide  
filtering for the lowside supply.  
19  
BST  
Upper MOSFET Floating Bootstrap Supply. A capacitor connected between the BST and SW pins  
holds this bootstrapped voltage for the highside MOSFET as it is switched.  
20  
21  
DRVH  
SW  
Main Switch Drive. Output drive for the upper MOSFET.  
Switch Node Input. This pin is connected to the buck-switching node, close to the source of the upper  
MOSFET, and is the floating return for the upper MOSFET drive signal.  
22  
23  
VCC  
Input Supply. This pin does not power the SYS amplifier section.  
SYSM  
Negative System Current Sense Input. This pin connects to the battery side of the system current  
sense resistor.  
24  
25  
SYSP  
Positive System Current Sense Input. This pin connects to the adapter side of the system current  
sense resistor. This pin also provides power to the system amplifier section.  
Paddle  
This pin should be connected to AGND.  
http://onsemi.com  
4
ADP3808A  
ELECTRICAL CHARACTERISTICS  
V
CC  
= 20 V, EN = 5.0 V, REFIN = 3.0 V, T = 0°C to 100°C; unless otherwise noted. (Note 1)  
A
Parameter  
Symbols  
Symbol  
Min  
Typ  
Max  
Unit  
Battery Voltage Sensing  
Accuracy  
ΔV  
T = 25°C, 13 V V 21 V,  
0.4  
+0.4  
%
BAT  
A
CC  
BATADJ = 0 V or BATADJ = REFIN  
5°C T 55°C, 13 V V 21 V,  
0.6  
0.8  
+0.6  
+0.8  
%
%
A
CC  
BATADJ = 0 V or BATADJ = REFIN  
13 V V 21 V,  
CC  
BATADJ = 0 V or BATADJ = REFIN  
Input Resistance  
R
170  
0.2  
135  
1
kW  
mA  
%
BAT  
Shutdown Leakage Current  
Overvoltage Threshold  
Overvoltage Response Time  
Battery Voltage Adjust  
BATADJ Input Range  
REFIN Input Range  
I
EN = 0 V  
1.0  
BAT(SD)  
V
120  
BAT(OV)  
BAT(OV)  
t
V
to COMP < 1 V  
ms  
BAT(OV)  
V
0
REFIN  
3.5  
V
V
V
V
V
V
BATADJ  
V
REFIN  
2.0  
3-Cell Voltage Low  
V
BATADJ = 0 V, CELLSEL = 3.3 V  
BATADJ = REFIN, CELLSEL = 3.3 V  
BATADJ = 0 V, CELLSEL = 0 V  
BATADJ = REFIN, CELLSEL = 0 V  
12.0  
13.5  
16.0  
18.0  
BAT  
BAT  
BAT  
BAT  
3-Cell Voltage High  
V
V
V
4-Cell Voltage Low  
4-Cell Voltage High  
Battery Current Sense Amplifier  
Accuracy (Note 2)  
CSADJ = REFIN, 3 V V  
21 V  
5  
9  
+5  
+9  
%
%
CS(CM)  
CSADJ = REFIN / 5, 3 V V  
21 V  
CS(CM)  
0°C T 55°C, CSADJ = REFIN / 32,  
33  
40  
0
+33  
+40  
%
%
A
3 V V  
12 V  
CS(CM)  
0°C T 55°C, CSADJ = REFIN / 32,  
A
12 V < V  
21 V  
CS(CM)  
Input Common Mode Range  
Input Bias Current, Operating  
Input Bias Current, Shutdown  
Input Bias Current, CSM  
Gain  
V
V
CC  
V
CM(CS)  
I
40  
0.1  
0.1  
31.25  
1
mA  
mA  
mA  
V/V  
mA  
mV  
ms  
B(CSP)  
I
EN = 0 V  
1
2
B(CSP,SD)  
I
B(CSM)  
A
V(CS)  
B(CSADJ)  
CSADJ Bias Current  
I
2
Overcurrent Threshold (Note 2)  
Overcurrent Response Time  
DRVL Shutdown Threshold  
System Current Sense Amplifier  
Input Common Mode Range  
Input Bias Current, SYSP  
Input Bias Current, SYSM  
Voltage Gain  
V
90  
100  
1
110  
CS(OC)  
t
V
OC  
> 130 mV to COMP < 1 V  
DC  
CS(DRVLSD)  
V
28  
mV  
V
SYSP and SYSM to AGND  
10  
22  
400  
1
V
CM(SYS)  
I
V
V
V
V
= 19 V  
= 19 V  
300  
0.1  
50  
5
mA  
mA  
V/V  
mA  
mV  
V
B(SYSP)  
SYS(CM)  
SYS(CM)  
I
B(SYSM)  
/(V  
V )  
SYSM  
49.5  
51.5  
ISYS  
ISYS  
SYSP  
ISYS Output Current  
= 2.5 V  
LIMIT Threshold  
V
V
SYSP to SYSM, LIMSET = 2.5 V  
48  
0
53  
58  
3.5  
75  
TH(LIMIT)  
LIMSET Input Range  
V
LIMSET  
LIMIT Output Voltage Low  
I
= 100 mA  
30  
mV  
OL(LIMIT)  
LIMIT  
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods.  
2. Measured between CSP and CSM. (V V ) = 96 mV x CSADJ/REFIN.  
CSP  
CSM  
3. For propagation delays, t  
refers to the specified signal going high, and t refers to it going low.  
pdh  
pdl  
4. The turnon of DRVL is initiated after DRVH turns off by either SW crossing a ~1.0 V threshold or by examination of the timeout delay.  
http://onsemi.com  
5
 
ADP3808A  
ELECTRICAL CHARACTERISTICS  
V
CC  
= 20 V, EN = 5.0 V, REFIN = 3.0 V, T = 0°C to 100°C; unless otherwise noted. (Note 1)  
A
Parameter  
Symbols  
Symbol  
Min  
Typ  
Max  
Unit  
LIMIT Propagation Delay Time  
t
(SYSP) (SYSM) rising > 55 mV to  
LIMIT going low  
1
ms  
pdl(LIMIT)  
EXTPWR Current Threshold  
EXTPWR Voltage Threshold  
EXTPWR Output Voltage Low  
V
V
V
V
SYSP to SYSM  
SYSP to AGND  
17.5  
18.0  
22.5  
18.25  
5
27.5  
18.5  
50  
mV  
V
TH(EXTPWR)  
TH(EXTPWR)  
TH(EXTPWR)  
dpl(EXTPWR)  
I
= 100 mA  
mV  
ms  
EXTPWR  
EXTPWR Propagation Delay  
Time  
SYSP Rising > 18.5 V to EXTPWR  
going low  
1
Oscillator  
Maximum Frequency  
Frequency Variation  
RT Output Voltage  
f
1
290  
2
MHz  
kHz  
V
OSC  
Δf  
RT = 150 kW  
250  
1.9  
340  
2.1  
OSC  
V
RT  
Zero Duty Cycle Threshold  
Maximum Duty Cycle Threshold  
Logic Inputs (EN, CELLSEL)  
Input Voltage High  
Measured at COMP  
Measured at COMP  
1
V
2
V
V
2.0  
–1  
V
V
IH  
Input Voltage Low  
V
0.8  
+1  
IL  
Input Current  
I
IN  
Inputs = 0 V or 5 V  
mA  
HighSide Driver  
Output Resistance, Sourcing  
Current  
BST to SW = 5 V  
BST to SW = 5 V  
BST to SW = 0 V  
3
3
8
8
W
W
Output Resistance, Sinking  
Current  
Output Resistance, Unbiased  
Transition Time  
10  
20  
45  
kW  
ns  
ns  
t
, t  
BST to SW = 5 V, C  
= 1 nF  
= 1 nF  
40  
70  
rDRVH fDRVH  
LOAD  
LOAD  
Propagation Delay Time  
LowSide Driver  
t
BST to SW = 5 V, C  
25  
pdhDRVH  
Output Resistance, Sourcing  
Current  
3.8  
1.5  
8
8
W
W
Output Resistance, Sinking  
Current  
Output Resistance, Unbiased  
Transition Time  
VCC = PGND  
10  
20  
15  
kW  
ns  
ns  
ns  
t
, t  
C
C
= 1 nF  
= 1 nF  
40  
35  
rDRVL fDRVL  
LOAD  
LOAD  
Propagation Delay Time (Note 3)  
Timeout Delay (Note 4)  
t
pdhDRVL  
SW = 5 V  
SW = PGND  
150  
150  
300  
300  
Supply V  
CC  
Supply Voltage Range  
Supply Current  
V
CC  
10  
22  
V
Normal Mode  
I
EN = 5 V  
EN = 0 V  
9.8  
1
14  
10  
10  
mA  
mA  
V
VCC  
Shutdown Mode  
I
VCC(SD)  
Undervoltage Lockout Threshold  
Undervoltage Lockout Hysteresis  
DRV Regulator Output Voltage  
DRV Regulator Output Current  
V
UVLO  
V
CC  
rising  
9
9.5  
600  
5.25  
mV  
V
V
C = 100 nF  
L
5.0  
10  
5.5  
DRVREG  
I
mA  
DRVREG  
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods.  
2. Measured between CSP and CSM. (V V ) = 96 mV x CSADJ/REFIN.  
CSP  
CSM  
3. For propagation delays, t  
refers to the specified signal going high, and t refers to it going low.  
pdh  
pdl  
4. The turnon of DRVL is initiated after DRVH turns off by either SW crossing a ~1.0 V threshold or by examination of the timeout delay.  
http://onsemi.com  
6
 
ADP3808A  
TYPICAL CHARACTERISTICS  
30  
25  
20  
0.15  
V
T
= 16V  
CC  
A
V
= 16V  
CC  
= 255C  
0.1  
0.05  
0
–0.05  
–0.1  
–0.15  
–0.2  
15  
10  
5
–0.25  
–0.3  
0
–0.5 –0.4 –0.3 –0.2 –0.1  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0
100  
10  
20  
30  
40  
50  
60  
70  
80  
90  
V
ACCURACY (%)  
TEMPERATURE (5C)  
BAT  
Figure 2. VBAT Accuracy Distribution  
Figure 3. VBAT Accuracy vs. Temperature  
0.07  
0.06  
12  
T
= 255C  
NO LOADS  
A
T
= 05C  
A
11  
10  
9
0.05  
0.04  
0.03  
0.02  
0.01  
0
T
= 255C  
A
T
= 1005C  
A
8
–0.01  
–0.02  
–0.03  
–0.04  
7
6
12  
13  
14  
15  
16  
(V)  
17  
18  
19  
20  
13  
14  
15  
16  
V
17  
(V)  
18  
19  
20  
V
CC  
CC  
Figure 4. VBAT Accuracy vs. VCC  
Figure 5. On Supply Current vs. VCC  
126  
106  
86  
20  
18  
16  
14  
12  
V
T
= 16V  
fOASC = 300kHz  
CC  
T
= 1005C  
= 255C  
A
T
= 255C  
A
66  
46  
T
= 05C  
A
26  
6
10  
0
13  
14  
15  
16  
17  
18  
19  
12  
20  
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
V
(V)  
DRIVER LOAD CAPACITANCE (pF)  
CC  
Figure 6. Off Supply Current vs. VCC  
Figure 7. Supply Current vs. Driver Load  
Capacitance  
http://onsemi.com  
7
ADP3808A  
TYPICAL CHARACTERISTICS  
6
5
ISYS RISING  
ISYS FALLING  
400  
350  
4
3
2
300  
250  
1
0
200  
90  
110  
130  
150  
170  
190  
210  
0
0.5  
1
1.5  
2
2.5  
3.0  
V
(V)  
RT (kW)  
ISYS  
Figure 8. Oscillator Frequency vs. RT  
Figure 9. VLIMIT vs. VISYS  
3.3  
3.2  
3.1  
3.0  
2.9  
4.5  
4
V
= 16V  
V
= 16V  
CC  
CC  
SOURCE  
3.5  
3
SINK  
2.5  
2
SOURCE  
SINK  
2.8  
2.7  
1.5  
1
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
TEMPERATURE (5C)  
TEMPERATURE (5C)  
Figure 10. DRVH On Resistance vs. Temperature  
Figure 11. DRVL On Resistance vs. Temperature  
V
T
= 16V  
CC  
A
DRVH  
5V/DIV  
= 255C  
DRVL 5V/DIV  
200ns/DIV  
Figure 12. Driver Waveforms  
http://onsemi.com  
8
 
ADP3808A  
TYPICAL CHARACTERISTICS  
100  
95  
90  
85  
80  
75  
70  
65  
60  
V
V
T
= 19V  
BAT  
= 255C  
CC  
= 12.4V  
A
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
CHARGE CURRENT (A)  
Figure 13. Conversion Efficiency vs. Charge Current  
97  
96  
I
= 2A  
CHARGE  
95  
94  
93  
92  
91  
90  
89  
88  
I
= 3A  
CHARGE  
V
T
= 19V  
= 255C  
CC  
A
3
4
5
6
7
8
9
10  
11  
12  
13  
V
(V)  
BAT  
Figure 14. Conversion Efficiency vs. Battery Voltage  
http://onsemi.com  
9
ADP3808A  
Theory of Operation  
drives two external power NMOS transistors for a simple,  
lower cost power stage.  
The ADP3808A combines a bootstrapped synchronous  
switching driver with programmable current control and  
accurate final battery voltage control in a constant-current,  
constant-voltage (CCCV) Li-Ion battery charger. High  
accuracy voltage control is needed to safely charge Li-Ion  
batteries, which are typically specified at 4.2 V 1% per  
cell. For a typical notebook computer battery pack, three or  
four cells are in series, giving a total voltage of 12.6 V or  
16.8 V. The ADP3808A allows the final battery voltage to  
be programmed. The programmable range is 4.0 V to 4.5 V  
per cell. The total number of cells to be charged can be set  
to either 3 or 4 via a control pin.  
Another requirement for safely charging Li-Ion batteries  
is accurate control of the charge current. The actual charge  
current depends on the number of cells in parallel within the  
battery pack. Typically, this is in the range of 2.0 A to 3.0A.  
The ADP3808A provides flexibility in programming the  
charge current over a wide range. An external resistor is used  
to sense the charge current. The charge current can be set by  
programming the sense resistor voltage drop. The voltage  
drop can be set to a maximum of 96 mV. This  
programmability allows the current to be changed during  
charging. For example, the charge current can be reduced for  
trickle charging.  
The ADP3808A also provides an uncommitted current  
sense amplifier. This amplifier provides an analog output  
pin for monitoring the current through an external sense  
resistor. The amplifier can be used anywhere in the system  
that high-side current sensing is needed. The sense amplifier  
output is compared to a programmable voltage limit. If the  
limit is exceeded, the LIMIT pin is asserted. The system  
sense amplifier is also used to detect the presence of an ac  
adaptor. If the adaptor is detected, the ADP3808A asserts a  
logic pin to signal the detection.  
Setting the Charge Current  
The charge current is measured across an external sense  
resistor, R , between the CSP and CSM pins. The input  
CS  
common-mode range is from ground to V , allowing  
CC  
current control in short-circuit and low dropout conditions.  
The voltage between CSP and CSM is programmed by a  
ratio of the voltages at CSADJ and REFIN according to  
Equation 1.  
CSADJ  
REFIN  
(eq. 1)  
V
CSP * VCSM + 96 mV  
For example, using a 20 mW sense resistor gives a range  
from 150 mA with CSADJ = REFIN/32 to 4.8 A maximum  
when CSADJ = REFIN.  
The synchronous driver provides high efficiency when  
charging at high currents. Efficiency is important mainly to  
reduce the amount of heat generated in the charger, but also  
to stay within the power limits of the ac adapter. With the  
addition of a bootstrapped high-side driver, the ADP3808A  
The power dissipation in R should be kept below  
CS  
500 mW. Components R4 and C13 in Figure 15 provide high  
frequency filtering for the current sense signal.  
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10  
 
ADP3808A  
R
SS  
10mR  
SYSTEM  
DC/DC  
R
20mR  
1/2 Q1  
FD56990A  
CS  
L1  
V
IN  
+
22uH  
C16  
22uF  
+
C15  
22uF  
R13  
10R  
1/2 Q1  
FD56990A  
R4  
510R  
R2  
510R  
BATTERY  
12.6V/16.8V  
C13  
22nF  
C1  
2.2uF  
3.3V  
C14  
2.2uF  
C9  
100nF  
BST DRV  
ISYS  
LIMIT  
SW DRVL PGND  
V
CSP  
CSM  
SYSP  
SYSM  
CC  
BOOTSTRAPPED  
SYNCHRONOUS  
DRIVER  
3.3V  
+
+
AMP2  
AMP1  
+
R9  
EN  
IN DRVLSD DRVLSD  
LIMSET  
+
V
+ V  
REG  
REF  
R10  
V
TH  
UVLO  
DRVREG  
+
BIAS  
5.25V  
C10  
0.1uF  
1V  
EXTPWR  
gm1  
+
+
+
SYSP  
18.25V  
EN  
CSADJ  
BAT  
LOGIC  
CONTROL  
CHARGE  
CURRENT  
SETPOINT  
3.3V  
R11  
3/4CELL  
OSCILLATOR  
gm2  
+
SELECTION  
REFIN  
BATTERY  
VOLTAGE  
ADJUST  
ADP3808A  
BATADJ  
R12  
COMP  
RT  
CELLSEL  
AGND  
C8  
0.22uF  
150k  
R8  
56R  
C11  
Figure 15. Typical Application Circuit  
Final Battery Voltage Control  
As the battery approaches its final voltage, the  
ADP3808A switches from CC mode to CV mode. The  
BATADJ pin and is ratioed to the REFIN pin. The battery  
voltage V is set according to Equation 2 and Equation 3.  
BAT  
For CELLSEL > 2 V:  
change is achieved by the common output node of g 1 and  
m
BATADJ  
REFIN  
(eq. 2)  
(eq. 3)  
V
BAT + 12 V ) 1.5 V  
g 2. Only one of the two outputs controls the voltage at the  
m
COMP pin. Both amplifiers can only pulldown on COMP,  
such that when either amplifier has a positive differential  
input voltage, its output is not active. For example, when the  
For CELLSEL < 0.8 V:  
BATADJ  
REFIN  
V
BAT + 16 V ) 2.0 V  
battery voltage, V , is low, g 2 does not control VCOMP.  
BAT  
m
When the battery voltage reaches the desired final voltage,  
Oscillator and PWM  
g 2 takes control of the loop, and the charge current is  
m
The oscillator generates a triangle waveform between  
1.0 V and 2.0 V, which is compared to the voltage at the  
COMP pin, setting the duty cycle of the driver stage. When  
reduced.  
Amplifier g 2 compares the battery voltage to a  
m
programmable level set by pins BATADJ and REFIN. The  
target battery voltage is dependent on the state of the  
CELLSEL pin as CELLSEL sets the number of cells to be  
charged. Pulling CELLSEL high sets the ADP3808A to  
charge three cells. When CELLSEL is tied to ground, four  
cells are selected. CELLSEL has a 2 mA pullup current as a  
failsafe to select three cells when it is left open.  
V
COMP  
is below 1.0 V, the duty cycle is zero. Above 2.0 V,  
the duty cycle reaches its maximum. The oscillator  
frequency is set by the external resistor at the RT pin, R  
and is given by Equation 4.  
,
OSC  
41   109  
ROSC  
(eq. 4)  
fOSC  
+
The final battery voltage is programmable from 4.0 V to  
4.5 V per cell. The programming voltage is applied to the  
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11  
 
ADP3808A  
DRVREG  
ADP3808A  
BOOTSTRAPPED  
SYNCHRONOUS DRIVER  
BST  
CMP3  
CBST  
DRVH  
MIN  
OFF  
TIME  
IN  
Q1  
EN  
SW  
CMP2  
+
DELAY  
DELAY  
1V  
DRVL  
PGND  
Q2  
CMP1  
+
1V  
DRVLSD  
Figure 16. Bootstrapped Synchronous Driver  
5.25 V Bootstrap Regulator  
Overlap protection is included in the driver to ensure that  
both external MOSFETs are not on at the same time. When  
DRVH turns off the upper MOSFET, the SW node goes low  
due to the inductor current. The ADP3808A monitors the  
SW voltage, and DRVL goes high to turn on the lower  
MOSFET when SW goes below 1.0 V. When DRVL turns  
off, an internal timer adds a delay of 50 ns before turning  
DRVH on. When the charge current is low, the DRVLSD  
comparator signals the driver to turn off the low-side  
MOSFET and DRVL is held low. The DRVLSD threshold  
is set to 0.8 V corresponding to a 32 mV differential between  
the CS pins.  
The driver stage monitors the voltage across the BST  
capacitor with CMP3. When this voltage is less than 4.0 V,  
CMP3 forces a minimum off time of 200 ns. This ensures  
that the BST capacitor is charged even during DRVLSD.  
However, because a minimum off time is only forced when  
needed, the maximum duty cycle is greater than 99%.  
The driver stage is powered by the internal 5.25 V  
bootstrap regulator, which is available at the DRVREG pin.  
Because the switching currents are supplied by this  
regulator, decoupling must be added. A 0.1 mF capacitor  
should be placed close to the ADP3808A, with the ground  
side connected close to the power ground pin, PGND. This  
supply is not recommended for use externally due to high  
switching noise.  
Bootstrapped Synchronous Driver  
The PWM comparator controls the state of the  
synchronous driver shown in Figure 16. A high output from  
the PWM comparator forces DRVH on and DRVL off. The  
drivers have an on resistance of less than 4.0 W for fast rise  
and fall times when driving external MOSFETs.  
Furthermore, the bootstrapped drive allows an external  
NMOS transistor for the main switch instead of a PMOS. A  
boost capacitor of 0.1 mF must be added externally between  
BST and SW.  
System Current Sense  
The DRVL pin switches between DRVREG and PGND.  
The 5.25 V output of DRVREG drives the external NMOS  
An uncommitted differential amplifier is provided for  
additional high-side current sensing. This amplifier, AMP2,  
has a fixed gain of 50 V/V from the SYSP and SYSM pins  
to the analog output at ISYS. The common-mode range of  
the input pins is from 10 V to 22 V. This amplifier is the only  
part of the ADP3808A that remains active during shutdown.  
The power to this block is derived from the bias current on  
the SYSP and SYSM pins.  
with high V to lower the on resistance. PGND should be  
GS  
connected close to the source pin of the external  
synchronous NMOS. When DRVL is high, this turns on the  
lower NMOS and pulls the SW node to ground. At this point,  
the boost capacitor is charged up through the internal boost  
diode. When the PWM switches high, DRVL is turned off  
and DRVH turns on. DRVH switches between BST and SW.  
When DRVH is on, the SW pin is pulled up to the input  
supply (typically 16 V), and BST rises above this voltage by  
approximately 4.75 V.  
LIMIT  
The LIMIT pin is an open-drain output that signals when  
the voltage at ISYS exceeds the voltage at LIMSET. The  
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12  
 
ADP3808A  
internal comparator produces the function shown in  
Figure 9. This is a graph of V vs. V where  
comparator limits the maximum voltage. Neither of these  
comparators affects the loop under normal charging  
conditions.  
LIMIT  
ISYS  
LIMSET is set to 1.5 V. The LIMIT pin should be pulled up  
to a maximum of 6.0 V through a resistor. When ISYS is  
below LIMSET, the LIMIT pin has high output impedance.  
The open-drain output is capable of sinking 100 mA when  
the threshold is exceeded. This comparator is turned off  
during shutdown to conserve power.  
Application Information  
Design Procedure  
Refer to Figure 15, the typical application circuit, for the  
following description. The design follows that of a buck  
converter. With Li-Ion cells it is important to have a regulator  
with accurate output voltage control.  
AC Adaptor Detection  
The EXTPWR pin on the ADP3808A is an opendrain  
active low output used to signal that an ac adaptor is  
connected. If the ISYS voltage level is greater than 1.0 V or  
the SYSP sense pin voltage is greater then 18.25 V, the  
EXTPWR pin is driven low. A pullup resistor must be  
connected when this function is required. The maximum  
pullup voltage is 6.0 V.  
Battery Voltage Settings  
Inductor Selection  
Usually the inductor is chosen based on the assumption  
that the inductor ripple current is 15% of the maximum  
output dc current at maximum input voltage. As long as the  
inductor used has a value close to this, the system should  
work fine. The final choice affects the tradeoffs between  
cost, size, and efficiency. For example, the lower the  
inductance, the size is smaller but ripple current is higher.  
This situation, if taken too far, leads to higher ac losses in the  
core and the windings. Conversely, a higher inductance  
results in lower ripple current and smaller output filter  
capacitors, but the transient response will be slower. With  
these considerations, the required inductance can be  
calculated using Equation 5.  
EN  
A high impedance CMOS logic input is provided to turn  
off the ADP3808A. When the voltage on EN is less than  
0.8 V, the ADP3808A is placed in low power shutdown.  
With the exception of the system current sense amplifier,  
AMP2, all other circuitry is turned off. The reference and  
regulators are pulled to ground during shutdown and all  
switching is stopped. During this state, the supply current is  
less than 5.0 mA. In addition, the BAT, CSP, CSM, and SW  
pins go to high impedance to minimize current drain from  
the battery.  
V
IN, MAX * VBAT  
(eq. 5)  
L1 +  
  DMIN   TS  
DI  
where the maximum input voltage V  
is used with the  
UVLO  
IN, MAX  
Undervoltage lockout, UVLO, is included in the  
minimum duty ratio D  
. The duty ratio is defined as the  
MIN  
ADP3808A to ensure proper startup. As V rises above  
ratio of the output voltage to the input voltage, V  
The ripple current is calculated using Equation 6.  
/V .  
BAT IN  
CC  
1.0 V, the regulator tracks V  
until it reaches its final  
CC  
voltage. However, the rest of the circuitry is held off by the  
UVLO comparator. The UVLO comparator monitors the  
regulator to ensure that it is above 5.0 V before turning on  
DI + 0.3   IBAT, MAX  
(eq. 6)  
The maximum peak-to-peak ripple is 30%, that is 0.3, and  
maximum battery current, I , is used.  
BAT, MAX  
the main charger circuitry. This occurs when V reaches  
CC  
For example, with V  
= 19 V, V  
= 12.6 V, I  
BAT BAT,  
IN, MAX  
9.5 V. Monitoring the regulator outputs makes sure that the  
charger circuitry and driver stage have sufficient voltage to  
operate normally. The UVLO comparator includes 600 mV  
of hysteresis to prevent oscillations near the threshold.  
= 3.0 A, and T = 4 ms, the value of L1 is calculated as  
MAX  
S
18.9 mH. Choosing the closest standard value gives L1 = 22 mH.  
Output Capacitor Selection  
An output capacitor is needed in the charger circuit to  
absorb the switching frequency ripple current and smooth  
the output voltage. The rms value of the output ripple current  
is given by:  
Loop Feed Forward  
As the startup sequence discussion shows, the response  
time at COMP is slowed by the large compensation  
capacitor. To speed up the response, two comparators can  
quickly feed forward around the normal control loop and  
pull the COMP node down to limit any overshoot in either  
short-circuit or overvoltage conditions. The overvoltage  
comparator has a trip point set to 35% higher than the final  
battery voltage. The overcurrent comparator threshold is set  
to 100 mV across the CS pins. When these comparators are  
tripped, a normal softstart sequence is initiated. The  
overvoltage comparator is valuable when the battery is  
removed during charging. In this case, the current in the  
inductor causes the output voltage to spike up, and the  
VIN, MAX  
( )  
D 1 * D  
(eq. 7)  
Irms  
+
Ǹ
f L1 12  
The maximum value occurs when the duty cycle is 0.5. Thus,  
VIN, MAX  
(eq. 8)  
I
rms_MAX + 0.072  
f L1  
For an input voltage of 19 V and a 22 uH inductance, the  
maximum rms current is 0.26 A. A typical 10 mF or 22 mF  
ceramic capacitor is a good choice to absorb this current.  
http://onsemi.com  
13  
 
ADP3808A  
Input Capacitor Ripple  
MOSFET Selection  
As is the case with a normal buck converter, the pulse  
current at the input has a high rms component. Therefore,  
because the input capacitor has to absorb this current ripple,  
it must have an appropriate rms current rating. The maximum  
input rms current is given by  
One of the features of the ADP3808A is that it allows use of  
a high-side NMOS switch instead of a more costly PMOS  
device. The converter also uses synchronous rectification for  
optimal efficiency. To use a high-side NMOS, an internal  
bootstrap regulator automatically generates a 5.25 V supply  
across C10.  
Ǹ
PBAT  
h   DVIN  
(
)
D 1 * D  
Maximum output current determines the  
R
DS(ON)  
(eq. 9)  
Irms  
+
 
D
requirement for the two power MOSFETs. When the  
ADP3808A is operating in continuous mode, the simplifying  
assumption can be made that one of the two MOSFETs is  
always conducting the load current. The power dissipation for  
each MOSFET is given by:  
where h is the estimated converter efficiency (approximately  
90%, 0.9) and P is the maximum battery power consumed.  
BAT  
This is a worstcase calculation and, depending on total  
charge time, the calculated number could be relaxed.  
Consult the capacitor manufacturer for further technical  
information.  
Upper MOSFET:  
2
Ǹ
Ǹ
ǒ
  DǓ  
P
DISS + RDS(ON)   IBAT  
) VIN   IBAT   D   
Decoupling the VCC Pin  
TSW   f  
(eq. 10)  
It is a good idea to use an RC filter (R13 and C14) from the  
input voltage to the IC both to filter out switching noise and  
to supply bypass to the chip. During layout, this capacitor  
should be placed as close to the IC as possible. Values  
between 0.1 mF and 2.2 mF are recommended.  
Lower MOSFET:  
2
Ǹ
ǒ
  DǓ  
P
DISS + RDS(ON)   IBAT  
) VIN  
 
2
Ǹ
ǒ
  1 * DǓ  
IBAT  
  TSW   f  
(eq. 11)  
Current Sense Filtering  
where f is the switching frequency and t  
is the switch  
During normal circuit operation, the current sense signals  
can have high frequency transients that need filtering to  
ensure proper operation. In the case of the CSP and CSM  
inputs, Resistor R4 is set to 510 W and the filter capacitor C13  
is 22 nF. For the system current sense filter on SYSP, SYSM,  
R2 is set to 510 W, C1 is 2.2 mF.  
SW  
transition time, usually 10 ns.  
The first term accounts for conduction losses while the  
second term estimates switching losses. Using these  
equations and the manufacturer’s data sheets, the proper  
device can be selected.  
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14  
ADP3808A  
PACKAGE DIMENSIONS  
LFCSP24 4x4, 0.5P  
CASE 932AG01  
ISSUE O  
NOTES:  
D
A
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
B
E
D1  
2. CONTROLLING DIMENSIONS: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.15 AND 0.30mm FROM THE TERMINAL TIP.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
PIN ONE  
REFERENCE  
E1  
MILLIMETERS  
0.15  
C
DIM MIN  
MAX  
1.00  
0.05  
A
A1  
A3  
b
0.80  
0.00  
0.20 REF  
0.15  
C
TOP VIEW  
H
0.18  
0.30  
D
4.00 BSC  
3.75 BSC  
1.95 2.25  
4.00 BSC  
3.75 BSC  
D1  
D2  
E
E1  
E2  
e
(A3)  
0.10  
C
1.95  
2.25  
A
0.50 BSC  
NOTE 4  
0.08  
C
°
−−−  
0.50  
0.60  
H
K
L
M
−−−  
0.20  
0.30  
−−−  
12  
A1  
SEATING  
C
SIDE VIEW  
PLANE  
4X  
M
4X  
M
D2  
K
SOLDERING FOOTPRINT*  
7
4.30  
13  
PIN 1  
INDICATOR  
24X  
0.63  
2.30  
E2  
24X  
L
1
1
24  
24X  
b
0.10  
4.30  
2.30  
e
C
C
A
B
0.05  
NOTE 3  
BOTTOM VIEW  
PACKAGE  
OUTLINE  
24X  
0.30  
0.50  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
ADP3808A/D  

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