AFGHL40T65SQD [ONSEMI]
AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT;
| 型号： | AFGHL40T65SQD |
| 厂家： | 
ONSEMI |
| 描述： | AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT 双极性晶体管 |
| 文件： | 总9页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
40ꢀA, 650ꢀV
AFGHL40T65SQD
Using the novel field stop 4th generation high speed IGBT
technology. AFGHL40T65SQD which is AEC Q101 qualified offers
the optimum performance for both hard and soft switching topology in
automotive application.
www.onsemi.com
Features
• AEC−Q101 Qualified
40 A, 650 V,
• Maximum Junction Temperature: T = 175°C
J
VCESat = 1.6 V
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
• Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 40 A
C
CE(Sat)
• 100% of the Parts are Tested for I (Note 2)
LM
• Fast Switching
• Tight Parameter Distribution
• RoHS Compliant
G
E
Typical Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
• Totem Pole Bridgeless PFC
• PTC
G
MAXIMUM RATINGS
C
Rating
Symbol Value
Unit
V
E
TO−247−3L
CASE 340CX
Collector−to−Emitter Voltage
V
CES
V
GES
650
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
20
30
V
MARKING DIAGRAM
Collector Current (Note 1)
@ T = 25°C
I
C
80
40
A
C
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
160
160
A
A
A
LM
I
CM
&Z&3&K
AFGHL
40T65SQD
Diode Forward Current
(Note 1)
@ T < 25°C
@ T < 100°C
I
F
80
20
C
C
Pulsed Diode Maximum Forward Current
I
160
A
FM(2)
Maximum Power Dissipation @ T = 25°C
P
D
238
119
W
C
@ T = 100°C
C
Operating Junction
T , T
−55 to
°C
°C
J
STG
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
/ Storage Temperature Range
+175
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5 seconds
T
L
300
AFGHL40T65SQD = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
ORDERING INFORMATION
2. V = 400 V, V = 15 V, I = 160 A, R = 15 W, Inductive Load
Device
Package
Shipping
CC
GE
C
G
3. Repetitive Rating: pulse width limited by max. Junction temperature
AFGHL40T65SQD
TO−247−3L 30 Units / Rail
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
June, 2020 − Rev. 2
AFGHL40T65SQD/D
AFGHL40T65SQD
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.63
1.71
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
C
= 0 V,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
Temperature Coefficient of
Breakdown Voltage
V
C
= 0 V,
= 1 mA
−
0.6
V/°C
GE
DBV
DT
CES
I
J
Collector−emitter cut−off current,
gate−emitter short−circuited
V
CE
= 0 V,
I
−
−
−
−
250
400
mA
GE
CES
V
= 650 V
Gate leakage current, collector−
emitter short−circuited
V
= 20 V,
= 0 V
I
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 40 mA
V
GE(th)
3.4
4.9
6.4
V
V
GE
CE
C
V
= 15 V, I = 40 A
V
CE(sat)
−
−
1.6
1.95
2.1
−
GE
C
V
GE
= 15 V, I = 40 A, T = 175°C
C
J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
2339
61
8
−
−
−
−
−
−
pF
nC
CE
ies
V
= 0 V,
Output capacitance
C
oes
f = 1 MHz
Reverse transfer capacitance
Gate charge total
C
res
V
= 400 V,
= 40 A,
Q
68
13
16
CE
g
I
C
Gate−to−emitter charge
Gate−to−collector charge
Q
Q
ge
gc
V
= 15 V
GE
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T
CC
= 25°C,
= 400 V,
= 20 A,
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
15
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
t
r
I
C
R
= 6 W,
G
Turn−off delay time
Fall time
t
70
d(off)
V
GE
= 15 V,
Inductive Load
t
f
3
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
0.25
0.09
0.34
17
mJ
ns
E
ts
T
C
= 25°C,
= 400 V,
= 40 A,
t
t
d(on)
V
CC
C
R
t
r
22
I
= 6 W,
= 15 V,
G
Turn−off delay time
Fall time
67
d(off)
V
GE
Inductive Load
t
f
31
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
0.75
0.29
1.04
mJ
E
ts
www.onsemi.com
2
AFGHL40T65SQD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T
= 175°C,
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
14
12
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V,
= 20 A,
CC
t
r
I
C
R
= 6 W,
= 15 V,
G
GE
Turn−off delay time
Fall time
81
d(off)
V
Inductive Load
t
f
7
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
0.46
0.22
0.68
16
mJ
ns
E
ts
T
= 175°C,
= 400 V,
= 40 A,
t
t
C
d(on)
V
CC
t
r
25
I
C
R
= 6 W,
= 15 V,
G
GE
Turn−off delay time
Fall time
75
d(off)
V
Inductive Load
t
f
38
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTICS
Diode Forward Voltage
E
on
E
off
1.06
0.47
1.53
mJ
V
E
ts
I = 20 A, T = 25°C
V
−
−
−
2.0
1.75
54
2.6
−
F
C
FM
rec
I = 20 A, T = 175°C
F
C
Reverse Recovery Energy
I = 20 A, dl /dt = 200 A/ms,
E
−
mJ
F
F
T
= 175°C
C
Diode Reverse Recovery Time
T
rr
−
−
−
−
28
209
38
−
−
−
−
ns
I = 20 A, dl /dt = 200 A/ms,
F
F
T
= 25°C
C
I = 20 A, dl /dt = 200 A/ms,
T
rr
F
F
T
C
= 175°C
Diode Reverse Recovery Charge
Q
nC
I = 20 A, dl /dt = 200 A/ms,
F
F
rr
rr
T
C
= 25°C
I = 20 A, dl /dt = 200 A/ms,
Q
605
F
F
T
C
= 175°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
AFGHL40T65SQD
TYPICAL CHARACTERISTICS
200
160
120
80
200
TC
20V
15V
= 25°C
TC
= 175°C
20V
15V
160
120
80
40
0
12V
10V
12V
10V
VGE = 8V
VGE = 8V
40
0
0
1
2
3
4
5
0
1
2
3
4
5
200
20
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, V [V]
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
3.0
2.0
1.0
200
160
120
80
TC
= 25°C
Common Emitter
VGE = 15V
Common Emitter
V GE = 15V
TC
= 175°C
80A
40A
40
0
IC = 20A
0
1
2
3
4
5
−100
−50
0
50
100
150
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Case Temperature, TC [°C]
Figure 3. Typical Saturation Voltage
Figure 4. Saturation Voltage vs. Case
Temperature
20
16
12
8
20
16
12
8
Common Emitter
Common Emitter
TC
TC
= 175°C
= 25°C
IC = 20A
80A
40A
80A
40A
4
0
4
0
IC = 20A
4
8
12
16
[V]
20
4
8
12
16
Gate−Emitter Voltage, V
GE
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
www.onsemi.com
4
AFGHL40T65SQD
TYPICAL CHARACTERISTICS
10000
1000
100
10
15
Common Emitter
T C = 25°C
Cies
300V
400V
12
9
V CC = 200V
Coes
6
Cres
3
Common Emitter
VGE = 0V, f = 1Mhz
T C
= 25°C
1
1
0
10
30
0
25
50
Gate Charge, Q g [nC]
75
100
Collector−Emitter Voltage, V
[V]
CE
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge
100
1000
100
10
tr
td(off)
tf
Common Emitter
td(on)
Common Emitter
VCC = 400V, VGE = 15V
VCC = 400V, V
= 15V,
GE
IC = 40A
IC = 40A
TC
TC
TC
TC
= 25°C
= 175°C
= 25°C
= 175°C
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, Rg [ W]
Gate Resistance, Rg [ W ]
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
200
100
1000
100
tr
td(off)
td(on)
tf
10
1
10
1
Common Emitter
Common Emitter
V
CC = 400V, VGE = 15V,
VCC = 400V, V GE = 15V,
RG = 6 W
RG = 6 W
TC
TC
TC = 25°C
TC = 175°C
= 25°C
= 175°C
0
30
60
90
120
0
30
60
90
120
Collector Current, IC [A]
Collector Current, IC [A]
Figure 11. Turn−On Characteristics vs.
Figure 12. Turn−Off Characteristics vs.
Collector Current
Collector Current
www.onsemi.com
5
AFGHL40T65SQD
TYPICAL CHARACTERISTICS
5
1
10
1
Eon
Eon
Eoff
0.1
Common Emitter
VCC = 400V, V
IC = 40A
Common Emitter
= 15V,
VCC = 400V, V GE = 15V,
GE
RG = 6 W
Eoff
T C = 25°C
T C = 175°C
TC
TC
= 25°C
= 175°C
0.1
0.01
0
10
20
30
40
50
0
30
60
90
120
Gate Resistance, Rg [ W ]
Collector Current, IC [A]
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
80
300
100 DC
ms
10
TC
= 175°C
ms
100
1ms
TC
= 75°C
10
1
10ms
10
TC
= 25°C
*Notes:
1. T C
2. T J
= 25°C
= 175°C
3. Single Pulse
1
0
0.1
1
10
100
1000
1
2
3
4
5
Forward Voltage, VF [V]
Collector − Emitter Voltage, VCE [V]
Figure 16. Forward Characteristics
Figure 15. SOA Characteristics
10
8
350
280
210
140
70
T C = 25°C
T C = 175°C
T C = 25°C
T C = 175°C
di/dt = 200A/uS
di/dt = 100A/uS
6
di/dt = 100A/uS
4
di/dt = 200A/uS
di/dt = 200A/uS
di/dt = 100A/uS
2
0
0
0
10
20
30
40
0
10
20
Forward Current, VF [V]
30
40
Forward Current, VF [V]
Figure 17. Reverse Recovery Current
Figure 18. Reverse Recovery Time
www.onsemi.com
6
AFGHL40T65SQD
TYPICAL CHARACTERISTICS
1000
800
600
400
200
T C = 25°C
T C = 175°C
di/dt = 100A/uS
di/dt = 200A/uS
0
0
10
20
30
40
Forward Current, VF [V]
Figure 19. Stored Charge
1
0.5
0.2
0.1
0.1
Notes:
Duty Factor, D = t /t
P
0.05
DM
1
2
0.02
0.01
Peak T = P
x Z
(t) + T
q
J
DM
JC C
t
1
t
2
Single Pulse
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
10
10
10
Figure 20. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.05
0.1
Notes:
Duty Factor, D = t /t
P
0.02
0.01
DM
1
2
Peak T = P
x Z
(t) + T
q
J
DM
JC C
t
1
Single Pulse
t
2
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of Diode
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明